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Technical Committee on Integrated Circuits and Devices (ICD) (Searched in: 2009)
Search Results: Keywords 'from:2009-07-16 to:2009-07-16'
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ICD, SDM | 2009-07-16 10:00 |
Tokyo | Tokyo Institute of Technology | 63GHz 36mW CMOS Differential Low-Noise Amplifier with 14GHz Bandwidth Minoru Fujishima, Youhei Natsukari (Univ.. of Tokyo.)  SDM2009-97 ICD2009-13 |
A low-power and wide-band 63GHz CMOS low-noise amplifier (LNA) with a single-ended input and differential outputs is pro... [more] | SDM2009-97 ICD2009-13 pp.1-6 |
| ICD, SDM | 2009-07-16 10:25 |
Tokyo | Tokyo Institute of Technology | A 100Mbps, 1.28mW Impulse Radio UWB Receiver with Charge-Domain Sampling Correlator in 0.18um CMOS Lechang Liu, Takayasu Sakurai, Makoto Takamiya (Univ. of Tokyo) SDM2009-98 ICD2009-14 |
A low power impulse radio ultra-wideband (UWB) receiver for DC-960MHz band is proposed in this paper. The proposed charg... [more] | SDM2009-98 ICD2009-14 pp.7-11 |
| ICD, SDM | 2009-07-16 11:00 |
Tokyo | Tokyo Institute of Technology | 49mW 5Gbps CMOS 60GHz Pulse Receiver for Wireless Communication Ahmet Oncu, Minoru Fujishima (Univ. of Tokyo.) SDM2009-99 ICD2009-15 |
A 5Gbps CMOS receiver for 60GHz impulse radio is realized. It contains a fully differential envelope detector for differ... [more] | SDM2009-99 ICD2009-15 pp.13-16 |
| ICD, SDM | 2009-07-16 11:25 |
Tokyo | Tokyo Institute of Technology | Low Energy Building Design in Packet Buffer Architecture with Deterministic Performance Guarantee Kazuya Zaitsu (Osaka City Univ.), Hisashi Iwamoto, Yasuto Kuroda, Yuji Yano (Renesas Technology), Koji Yamamoto (Renesas Design), Kazunari Inoue (Renesas Technology), Shingo Ata, Ikuo Oka (Osaka City Univ.) SDM2009-100 ICD2009-16 |
To design guaranteed high-performance router, it is problem that packet buffer is non-deterministic. We propose Head Buf... [more] | SDM2009-100 ICD2009-16 pp.17-22 |
| ICD, SDM | 2009-07-16 11:50 |
Tokyo | Tokyo Institute of Technology | The low power circuit design techniques for 2.88Gbps UWB transceiver Naoki Oshima, Keiichi Numata, Hiroshi Kodama, Hiromu Ishikawa, Hitoshi Yano, Akio Tanaka (NEC) SDM2009-101 ICD2009-17 |
A new transmission scheme, which has 2.88Gbps and -70dBm/MHz Ultra Wide Band(UWB) communication for near-touch downloadi... [more] | SDM2009-101 ICD2009-17 pp.23-28 |
| ICD, SDM | 2009-07-16 13:15 |
Tokyo | Tokyo Institute of Technology | [Invited Talk]
Issues and Future Prospects for Large Scale Integration using CNT devices Shinobu Fujita (Toshiba Corp.) SDM2009-102 ICD2009-18 |
[more] | SDM2009-102 ICD2009-18 pp.29-32 |
| ICD, SDM | 2009-07-16 14:00 |
Tokyo | Tokyo Institute of Technology | A 60pJ, 3-Clock Rising Time, VTH Loss Compensated Word-line Booster Circuit for 0.5V Power Supply Embedded/Discrete DRAMs Shuhei Tanakamaru, Ken Takeuchi (Univ. of Tokyo) SDM2009-103 ICD2009-19 |
A low power high-speed word-line booster is proposed for 0.5V operation DRAM. Word-line booster is composed of stand-by ... [more] | SDM2009-103 ICD2009-19 pp.33-38 |
| ICD, SDM | 2009-07-16 14:25 |
Tokyo | Tokyo Institute of Technology | Ferroelectric(Fe)-NAND Flash Memory with Non-volatile Page Buffer for Data Center Application Enterprise Solid-State Drives (SSD) Ryoji Yajima, Teruyoshi Hatanaka (Univ. of Tokyo), Mitsue Takahashi, Shigeki Sakai (AIST), Ken Takeuchi (Univ. of Tokyo) SDM2009-104 ICD2009-20 |
A ferroelectric (Fe)-NAND flash memory with a non-volatile (NV) page buffer is proposed. The data fragmentation in a ran... [more] | SDM2009-104 ICD2009-20 pp.39-44 |
| ICD, SDM | 2009-07-16 15:00 |
Tokyo | Tokyo Institute of Technology | Mobility in Silicon Nanowire GAA Transistor on (110) SOI Jiezhi Chen, Takuya Saraya, Toshiro Hiramoto (Univ. of Tokyo.) SDM2009-105 ICD2009-21 |
Systematic study on hole mobility in gate-all-around (GAA) multiple Si nanowire (NW) pFETs on (110) SOI is described, ut... [more] | SDM2009-105 ICD2009-21 pp.45-48 |
| ICD, SDM | 2009-07-16 15:25 |
Tokyo | Tokyo Institute of Technology | Comprehensive Design Methodology of Dopant Profile to Suppress Gate-LER-induced Threshold Voltage Variability in sub-30 nm NMOSFETs Hidenobu Fukutome (Fujitsu Microelectronics Limited), Yoko Hori (Fujitsu Quality Lab. Limited), Kimihiko Hosaka, Yoichi Momiyama, Shigeo Satoh, Toshihiro Sugii (Fujitsu Microelectronics Limited) SDM2009-106 ICD2009-22 |
We have demonstrated for the first time that parallel extension implantation tilted along the gate width direction enabl... [more] | SDM2009-106 ICD2009-22 pp.49-52 |
| ICD, SDM | 2009-07-16 15:50 |
Tokyo | Tokyo Institute of Technology | The Study of Mobility-Tinv Trade-off in Deeply Scaled High-k/Metal Gate Devices and Scaling Design Guideline for 22nm-node Generation Masakazu Goto, Shigeru Kawanaka, Seiji Inumiya, Naoki Kusunoki, Masumi Saitoh, Kosuke Tatsumura, Atsuhiro Kinoshita, Satoshi Inaba, Yoshiaki Toyoshima (Toshiba) SDM2009-107 ICD2009-23 |
The trade-off between Tinv scaling and carrier mobility () degradation in deeply scaled HK/MG nMOSFETs has been ... [more] | SDM2009-107 ICD2009-23 pp.53-56 |
| ICD, SDM | 2009-07-17 09:30 |
Tokyo | Tokyo Institute of Technology | Study of stacked NAND type 1-transistor FeRAM Koichi Sugano, Shigeyoshi Watanabe (Shonan Inst. of Tech.) SDM2009-108 ICD2009-24 |
[more] | SDM2009-108 ICD2009-24 pp.57-62 |
| ICD, SDM | 2009-07-17 09:55 |
Tokyo | Tokyo Institute of Technology | Study of stacked NAND type MRAM for universal memory Shouto Tamai, Shigeyoshi Watanabe (Shonan Inst. of Tech.) SDM2009-109 ICD2009-25 |
[more] | SDM2009-109 ICD2009-25 pp.63-68 |
| ICD, SDM | 2009-07-17 10:20 |
Tokyo | Tokyo Institute of Technology | [Invited Talk]
NanoBridge embedded into Cu interconnect Toshitsugu Sakamoto, Munehiro Tada, Yukihide Tsuji, Naoki Banno, Hiromitsu Hada (NEC Corp.), Masakazu Aono (NIMS) SDM2009-110 ICD2009-26 |
[more] | SDM2009-110 ICD2009-26 pp.69-72 |
| ICD, SDM | 2009-07-17 11:15 |
Tokyo | Tokyo Institute of Technology | [Invited Talk]
Impact of Silicon Technology in "Beyond CMOS" World Tetsuo Endoh, Takahiro Hanyu (Tohoku Univ.) SDM2009-111 ICD2009-27 |
In recent years, the Beyond CMOS technology is studied in addition to More Moore technology and More than Moore technolo... [more] | SDM2009-111 ICD2009-27 pp.73-78 |
| ICD, SDM | 2009-07-17 12:00 |
Tokyo | Tokyo Institute of Technology | Cross-Point phase change memory with 4F2 cell size driven by low-contact resistivity poly-si diode Yoshitaka Sasago, Masaharu Kinoshita, Takahiro Morikawa, Kenzo Kurotsuchi, Satoru Hanzawa, Toshiyuki Mine, Akio Shima, Yoshihisa Fujisaki, Hitoshi Kume, Hiroshi Moriya, Norikatsu Takaura, Kazuyoshi Torii (Hitachi) SDM2009-112 ICD2009-28 |
We have fabricated the cross-point phase change memory with a selection diode made of poly-Si. The selection diode was f... [more] | SDM2009-112 ICD2009-28 pp.79-83 |
| ICD, SDM | 2009-07-17 13:25 |
Tokyo | Tokyo Institute of Technology | [Invited Talk]
Spin-Transistor Electronics Satoshi Sugahara (Tokyo Inst. of Tech./JST) SDM2009-113 ICD2009-29 |
[more] | SDM2009-113 ICD2009-29 pp.85-89 |
| ICD, SDM | 2009-07-17 14:10 |
Tokyo | Tokyo Institute of Technology | Low Current Perpendicular Domain Wall Motion Cell for Scalable High-Speed MRAM Shunsuke Fukami, Tetsuhiro Suzuki, Kiyokazu Nagahara, Norikazu Ohshima (NEC Corp.), Yasuaki Ozaki (NECEL Corp.), Shinsaku Saito, Ryusuke Nebashi, Noboru Sakimura, Hiroaki Honjo, Kaoru Mori, Chuji Igarashi, Sadahiko Miura, Nobuyuki Ishiwata, Tadahiko Sugibayashi (NEC Corp.) SDM2009-114 ICD2009-30 |
We have developed a new magnetic random access memory with current-induced domain wall motion (DW-motion MRAM) using per... [more] | SDM2009-114 ICD2009-30 pp.91-95 |
| ICD, SDM | 2009-07-17 14:45 |
Tokyo | Tokyo Institute of Technology | [Invited Talk]
Nanotechnology supporting to realize information society friendly to humans and the earth Shuichi Tahara (NEC Corp.) SDM2009-115 ICD2009-31 |
NEC is pushing innovations of ICT by nanotechnologies from the viewpoint of BIT/ECO. By innovating materials and devices... [more] | SDM2009-115 ICD2009-31 pp.97-99 |
| ICD, SDM | 2009-07-17 15:30 |
Tokyo | Tokyo Institute of Technology | [Invited Talk]
Development of Graphene Devices and their Future Taiichi Otsuji (Tohoku Univ.) SDM2009-116 ICD2009-32 |
This paper reviews recent advances in our original graphene material epitaxially grown on Si substrate and its applicati... [more] | SDM2009-116 ICD2009-32 pp.101-106 |
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