| IEICE Technical Committee Submission System Conference Schedule |
Online Proceedings [Sign in] Tech. Rep. Archives |
Technical Committee on Electron Devices (ED) (Searched in: 2011)
Search Results: Keywords 'from:2012-02-07 to:2012-02-07'
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ED, SDM | 2012-02-07 13:30 |
Hokkaido | [Invited Talk]
Deterministic-doped Silicon Devices and Their Quantum Transport Takahiro Shinada, Masahiro Hori (Waseda Univ.), Filipo Guagliardo (Politecnico di Milano), Yukinori Ono (NTT), Kuninori Kumagai, Takashi Tanii (Waseda Univ.), Enrico Prati (CNR)  ED2011-142 SDM2011-159 |
[more] | ED2011-142 SDM2011-159 pp.1-5 |
|
| ED, SDM | 2012-02-07 14:10 |
Hokkaido | Ab initio Analysis of Electronic States for Single Phosphorus Dopants in Silicon Nanorod Transistors Youhei Kuzuya, Daniel Moraru, Takeshi Mizuno, Michiharu Tabe (Shizuoka Univ.), Hiroshi Mizuta (JAIST/Univ. of Southampton) ED2011-143 SDM2011-160 |
Dopant-induced fluctuation of MOSFET characteristics along with device miniaturization has been recognized as a serious ... [more] | ED2011-143 SDM2011-160 pp.7-11 |
|
| ED, SDM | 2012-02-07 14:35 |
Hokkaido | KFM observation of individual dopant potentials and electron charging Roland Nowak, Miftahul Anwar, Daniel Moraru, Takeshi Mizuno (Shizuoka Univ.), Ryszard Jablonski (Warsaw Univ. of Tech.), Michiharu Tabe (Shizuoka Univ.) ED2011-144 SDM2011-161 |
We utilize Kelvin probe force microscope (KFM) to measure surface potential of thin channel of nanoscale field effect tr... [more] | ED2011-144 SDM2011-161 pp.13-18 |
|
| ED, SDM | 2012-02-07 15:15 |
Hokkaido | High-Frequency Properties of Si Single-Electron Transistors Fabricated by Pattern-Dependent Oxidation Hiroto Takenaka, Michito Shinohara, Takafumi Uchida, Masashi Arita (Hokkaido Uni.), Akira Fujiwara (NTT), Yasuo Takahashi (Hokkaido Uni.) ED2011-145 SDM2011-162 |
Single electron transistor (SET) is a low power device. However, the high frequency operation properties have not been i... [more] | ED2011-145 SDM2011-162 pp.19-24 |
|
| ED, SDM | 2012-02-07 15:40 |
Hokkaido | High-frequency characterization of InAs nanowire MISFETs Tatsuro Watanabe, Yutaka Otsuhata, Takao Waho (Sophia Univ.), Kai Blekker, Werner Prost, Franz-Josef Tegude (Univ. of Duisburg-Essen) ED2011-146 SDM2011-163 |
[more] | ED2011-146 SDM2011-163 pp.25-29 |
|
| ED, SDM | 2012-02-07 16:05 |
Hokkaido | Possibility of High Order Harmonic Oscillators Based on Active Transmission Lines Loaded with Resonant Tunneling Diode Pairs Jie Pan, Kazuki Hayano, Masayuki Mori, Koichi Maezawa (Univ. Toyama) ED2011-147 SDM2011-164 |
[more] | ED2011-147 SDM2011-164 pp.31-34 |
|
| ED, SDM | 2012-02-07 16:30 |
Hokkaido | Gain enhancement in graphene terahertz amplifier with resonant structure Yuya Takatsuka, Kazuhiro Takahagi, Eiichi Sano (Hokkaido Univ.), Victor Ryzhii (Univ. of Aizu), Taiichi Otsuji (Tohoku Univ.) ED2011-148 SDM2011-165 |
THz devices have been developed over the last decade to utilise THz waves for non-destructive sensing and high-speed wir... [more] | ED2011-148 SDM2011-165 pp.35-40 |
|
| ED, SDM | 2012-02-07 16:55 |
Hokkaido | Light emission from Silicon quantum-well by tunneling current injection Jinichiro Noborisaka, Katsuhiko Nishiguchi, Hiroyuki Kageshima, Akira Fujiwara (NTT BRL) ED2011-149 SDM2011-166 |
We demonstrated electron tunneling spectroscopy of thin silicon-on-insulator (SOI) metal-oxide-semiconductor field-effec... [more] | ED2011-149 SDM2011-166 pp.41-46 |
|
| ED, SDM | 2012-02-08 09:30 |
Hokkaido | Observation of Conductance Quantization during SPM Scratching Ryutaro Suda, Takahiro Ohyama, Jun-ichi Shirakashi (Tokyo Univ. of Agr. & Tech) ED2011-150 SDM2011-167 |
Quantum point contacts (QPCs) are formed by mechanically scratching Au channels with a scanning probe microscope (SPM) i... [more] | ED2011-150 SDM2011-167 pp.47-52 |
|
| ED, SDM | 2012-02-08 09:55 |
Hokkaido | Simultaneous Control of Series-Connected Nanogaps by Field-Emission-Induced Electromigration Mitsuki Ito, Shunsuke Akimoto, Jun-ichi Shirakashi (Tokyo Univ. of Agr. & Tech.) ED2011-151 SDM2011-168 |
We present a simple and easy technique for the simultaneous control of electrical properties of multiple Ni nanogaps. Th... [more] | ED2011-151 SDM2011-168 pp.53-58 |
|
| ED, SDM | 2012-02-08 10:20 |
Hokkaido | Electrical characteristics of MgF_(2)/Fe/MgF_(2) thin films Takuma Ishikawa, Eita Sato, Kouichi Hamada, Masashi Arita, Yasuo Takahashi (Hokkaido Univ.) ED2011-152 SDM2011-169 |
On carefully prepared SiO2/Si substrates, MgF2/Fe-nanodots/MgF2 granular films were prepared, and fundamental electric p... [more] | ED2011-152 SDM2011-169 pp.59-64 |
|
| ED, SDM | 2012-02-08 11:00 |
Hokkaido | Seebeck Coefficient of Ultrathin Si with Fermi Energy Controlled by External Bias Faiz Salleh, Kazutoshi Miwa, Hiroya Ikeda (Shizuoka Univ.) ED2011-153 SDM2011-170 |
We varied the Seebeck coefficient of an n-type silicon-on-insulator (SOI) sample by applying an external bias in order t... [more] | ED2011-153 SDM2011-170 pp.65-69 |
|
| ED, SDM | 2012-02-08 11:25 |
Hokkaido | Stochastic resonance using a steep-subthreshold-swing transistor Katsuhiko Nishiguchi, Akira Fujiwara (NTT) ED2011-154 SDM2011-171 |
We demonstrate stochastic resonance (SR) using nanoscale metal-oxide-semiconductor field-effect transistors (MOSFETs) wi... [more] | ED2011-154 SDM2011-171 pp.71-76 |
|
| ED, SDM | 2012-02-08 13:00 |
Hokkaido | The Luttinger-liquid behavior in single-walled carbon nanotube networks Tomo Tanaka, Ken-ichiro Mori, Eiichi Sano, Bunshi Fugetsu, Hongwen Yu (Hokkaido Univ.) ED2011-155 SDM2011-172 |
Changes in the carrier transport properties of individually dispersed single-walled carbon nanotube (SWNT) random networ... [more] | ED2011-155 SDM2011-172 pp.77-82 |
|
| ED, SDM | 2012-02-08 13:25 |
Hokkaido | Charge distribution near interface of high-k gate insulator in CNFETs Kosuke Suzuki, Yutaka Ohno, Shigeru Kishimoto, Takashi Mizutani (Nagoya Univ.) ED2011-156 SDM2011-173 |
We have investigated the interface charges generated at the interfaces of the gate insulator in carbon nanotube field-ef... [more] | ED2011-156 SDM2011-173 pp.83-87 |
|
| ED, SDM | 2012-02-08 13:50 |
Hokkaido | Characterization and Analysis of Low-Frequency Noise in SiN Insulator-Gate GaAs Etched Nanowire FETs Toru Muramatsu, Seiya Kasai, Zenji Yatabe (Hokkaido Univ.) ED2011-157 SDM2011-174 |
Low-frequency noise in SiN-gate GaAs-based nanowire field-effect transistors (FETs) is characterized and analyzed focusi... [more] | ED2011-157 SDM2011-174 pp.89-93 |
|
| ED, SDM | 2012-02-08 14:15 |
Hokkaido | Study on nonlinear transfer characteristics in a GaAs three-branch nanowire junction device using a light-induced local conductance modulation method Masaki Sato, Toru Muramatsu, Seiya Kasai (Hokkaido Univ.) ED2011-158 SDM2011-175 |
Semiconductor three-branch nanowire junction devices show nonlinear electrical characteristics at room temperature and t... [more] | ED2011-158 SDM2011-175 pp.95-99 |
|
[Return to Top Page]