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Technical Committee on Electron Devices (ED) (Searched in: 2010)

Search Results: Keywords 'from:2010-06-30 to:2010-06-30'

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Search Results: Conference Papers

Conference Papers (Available on Advance Programs) (Sort by: Date Ascending)

Committee	Date Time	Place		Paper Title / Authors	Abstract	Paper #
ED, SDM	2010-06-30 15:15	Tokyo	Tokyo Inst. of Tech. Ookayama Campus	Deoxyribonucleic Acid Sensitive Graphene Field-Effect Transistors J. S. Hwang, H. T. Kim (Korea Univ.), J. H. Lee, D. M. Whang (Korea Univ./Sungkyunkwan Univ.), S. W. Hwang (Korea Univ.) ED2010-68 SDM2010-69	[more]	ED2010-68 SDM2010-69 pp.73-74
ED, SDM	2010-06-30 15:30	Tokyo	Tokyo Inst. of Tech. Ookayama Campus	Fabrication of InP/InGaAs DHBTs with buried SiO2 wires Naoaki Takebe, Takashi Kobayashi, Hiroyuki Suzuki, Yasuyuki Miyamoto, Kazuhito Furuya (Tokyo Inst. of Tech.) ED2010-69 SDM2010-70	In this paper, we report the fabrication and device characteristics of InP/InGaAs double heterojunction bipolar transist... [more]	ED2010-69 SDM2010-70 pp.75-79
ED, SDM	2010-06-30 15:45	Tokyo	Tokyo Inst. of Tech. Ookayama Campus	Reliability study on the emitter-base junction for high-speed sub-micron InP HBTs Yoshino K. Fukai, Kenji Kurishima, Norihide Kashio, Shoji Yamahata (NTT Photonics Labs.) ED2010-70 SDM2010-71	[more]	ED2010-70 SDM2010-71 pp.81-84
ED, SDM	2010-06-30 16:00	Tokyo	Tokyo Inst. of Tech. Ookayama Campus	Electrochemical formation of InP porous structures for their application to photoelectric conversion devices Hiroyuki Okazaki, Taketomo Sato, Naoki Yoshizawa, Tamotsu Hashizume (Hokkaido Univ) ED2010-71 SDM2010-72	[more]	ED2010-71 SDM2010-72 pp.85-89
ED, SDM	2010-06-30 16:30	Tokyo	Tokyo Inst. of Tech. Ookayama Campus	50-Gbit/s MUX/DEMUX IC modules using feed-trough type metal-wall package technique Satoshi Tsunashima, Michihiro Hirata, Koichi Murata (NTT Corp.) ED2010-72 SDM2010-73	A broadband metal-wall (MW) package that uses a feed-through RF interface has been developed for 50-Gbit/s multiplexer (... [more]	ED2010-72 SDM2010-73 pp.91-96
ED, SDM	2010-06-30 16:45	Tokyo	Tokyo Inst. of Tech. Ookayama Campus	94-GHz Monolithic Down-Converter for FMCW Radar Sensor using Metamorphic HEMTs Yong-Hyun Baek, Sang-Jin Lee, Tae-Jong Baek, Seok-Gyu Choi, Min Han, Dong-Sik Ko, Jin-Koo Rhee (Dongguk Univ.) ED2010-73 SDM2010-74	[more]	ED2010-73 SDM2010-74 pp.97-100
ED, SDM	2010-06-30 17:00	Tokyo	Tokyo Inst. of Tech. Ookayama Campus	A Sub-Harmonic RF Transmitter Architecture with Simultaneous Power Combination and LO Leakage Cancellation Bongsub Song (Sogang Univ.), Dohyung Kim (Samsung Electronics), Jinwook Burm (Sogang Univ.) ED2010-74 SDM2010-75	[more]	ED2010-74 SDM2010-75 pp.101-104
ED, SDM	2010-06-30 17:15	Tokyo	Tokyo Inst. of Tech. Ookayama Campus	RF Interconnect Technology for On-Chip and Off-Chip Communication Jongsun Kim (Hongik Univ.), B. Byun, M.Frank Chang (Univ. of California) ED2010-75 SDM2010-76	[more]	ED2010-75 SDM2010-76 pp.105-108
ED, SDM	2010-07-01 09:30	Tokyo	Tokyo Inst. of Tech. Ookayama Campus	[Keynote Address] Future perspective for the mainstream CMOS technology and their contribution to green technologies Hiroshi Iwai (Tokyo Inst. of Tech.) ED2010-76 SDM2010-77	[more]	ED2010-76 SDM2010-77 pp.109-114
ED, SDM	2010-07-01 10:20	Tokyo	Tokyo Inst. of Tech. Ookayama Campus	[Invited Talk] High Transport Si/SiGe Heterostructures for CMOS Transistors with Orientation and Strain Enhanced Mobility Jungwoo Oh, J. Huang, I. Ok, S. H. Lee, P. D. Kirsch, R. Jammy, Hi-Deok Lee (SEMATECH) ED2010-77 SDM2010-78	[more]	ED2010-77 SDM2010-78 pp.115-118
ED, SDM	2010-07-01 10:45	Tokyo	Tokyo Inst. of Tech. Ookayama Campus	[Invited Talk] III-V/Ge CMOS technologies and heterogeneous integrations on Si platform Shinichi Takagi, Mitsuru Takenaka (Univ. of Tokyo.) ED2010-78 SDM2010-79	CMOS utilizing high mobility III-V/Ge channels on Si substrates is expected to be one of key devices for high performanc... [more]	ED2010-78 SDM2010-79 pp.119-124
ED, SDM	2010-07-01 11:10	Tokyo	Tokyo Inst. of Tech. Ookayama Campus	[Invited Talk] Stress and Surface Orientation Engineering in Scaled CMOSFETs Considering High-Field Carrier Transport Masumi Saitoh, Yukio Nakabayashi (Toshiba), Ken Uchida (Tokyo Inst. of Tech.), Toshinori Numata (Toshiba) ED2010-79 SDM2010-80	We present the systematic study on the performance of short-channel and strained (100) and (110) n/pMOSFETs. Saturation ... [more]	ED2010-79 SDM2010-80 pp.125-129
ED, SDM	2010-07-01 11:50	Tokyo	Tokyo Inst. of Tech. Ookayama Campus	[Invited Talk] Si single-dopant devices and their characterization Michiharu Tabe, Daniel Moraru, Earfan Hamid, Miftahul Anwar, Arief Udhiarto, Ryusuke Nakamura, Sakito Miki, Takeshi Mizuno (Shizuoka Univ.) ED2010-80 SDM2010-81	[more]	ED2010-80 SDM2010-81 pp.131-136
ED, SDM	2010-07-01 12:15	Tokyo	Tokyo Inst. of Tech. Ookayama Campus	[Invited Talk] Investigation on fabrication of nanoscale patterns using laser interference lithography Jinnil Choi, Jung Ho, Ki-Young Dong, Eun-Mi Park, Byeong-Kwon Ju (Korea Univ.) ED2010-81 SDM2010-82	[more]	ED2010-81 SDM2010-82 pp.137-140
ED, SDM	2010-07-01 12:40	Tokyo	Tokyo Inst. of Tech. Ookayama Campus	[Invited Talk] Bottom-up synthesis of metal-free elementary semiconductor nanowires Dongmok Whang (Sungkyunkwan Univ.), Sung Woo Hwang (Koria Univ.) ED2010-82 SDM2010-83	[more]	ED2010-82 SDM2010-83 pp.141-142
ED, SDM	2010-07-02 09:30	Tokyo	Tokyo Inst. of Tech. Ookayama Campus	Fabrication of Oxide Thin Film Transistor based on SOG dielectric and solution ZnO Jung Ho Park, Jinnil Choi, Seongpil Chang, Ki-Young Dong, Eun-Mi Park, Byeong-Kwon Ju (Univ. of Korea) ED2010-83 SDM2010-84	[more]	ED2010-83 SDM2010-84 pp.143-146
ED, SDM	2010-07-02 09:45	Tokyo	Tokyo Inst. of Tech. Ookayama Campus	Device Simulation of Amorphous Indium-Gallium-Zinc-Oxide Thin Film transistors with various interfacial Dielectric layers Hyo-seong Seong, Ji-hoon Son, Woo-sung Kim, Hong-seung Kim (Korea Maritime Univ.), Woo-seok Cheong (ETRI), Nak-won Jang (Korea Maritime Univ.) ED2010-84 SDM2010-85	[more]	ED2010-84 SDM2010-85 pp.147-148
ED, SDM	2010-07-02 10:00	Tokyo	Tokyo Inst. of Tech. Ookayama Campus	Acivation behaviour for doped Si films after laser or furnace annealing Takashi Noguchi, Toshiharu Suzuki (Univ. of Ryukyus) ED2010-85 SDM2010-86	After excimer laser annealing (ELA) for heavily boron- or phosphorous-doped Si films, the relation between the conductiv... [more]	ED2010-85 SDM2010-86 pp.149-153
ED, SDM	2010-07-02 10:15	Tokyo	Tokyo Inst. of Tech. Ookayama Campus	Strain effects in resistor stress sensor fabricated on (001) silicon and their influences on the determination of piezoresistive coefficients Chun-Hyung Cho, Ho-Young Cha (Hongik Univ.) ED2010-86 SDM2010-87	[more]	ED2010-86 SDM2010-87 pp.155-160
ED, SDM	2010-07-02 10:30	Tokyo	Tokyo Inst. of Tech. Ookayama Campus	Fabrication of gas sensor using pd doped SnO2 nanotubes Ki-Young Dong, In-Sung Hwang, Dae-Jin Ham, Jinnil Choi, Jung-Ho Park, Jong-Heun Lee, Byeong-Kwon Ju (Korea Univ.) ED2010-87 SDM2010-88	[more]	ED2010-87 SDM2010-88 pp.161-162

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