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Technical Committee on Electron Devices (ED) (Searched in: 2010)
Search Results: Keywords 'from:2010-06-30 to:2010-06-30'
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ED, SDM | 2010-06-30 09:40 |
Tokyo | Tokyo Inst. of Tech. Ookayama Campus | [Keynote Address]
Challenge for electromechanical logic systems using compound semiconductor heterostructures Hiroshi Yamaguchi, Imran Mahboob, Hajime Okamoto, Koji Onomitsu (NTT)  ED2010-48 SDM2010-49 |
GaAs/AlGaAs heterostructures are promising material systems for fabricating all on-chip electromechanical parametric res... [more] | ED2010-48 SDM2010-49 pp.1-4 |
| ED, SDM | 2010-06-30 10:30 |
Tokyo | Tokyo Inst. of Tech. Ookayama Campus | [Invited Talk]
Nano-Electromechanical (NEM) Nonvolatile Memory for Low-Power Electronics Woo Young Choi (Sogang Univ.) ED2010-49 SDM2010-50 |
[more] | ED2010-49 SDM2010-50 pp.5-6 |
| ED, SDM | 2010-06-30 10:55 |
Tokyo | Tokyo Inst. of Tech. Ookayama Campus | [Invited Talk]
Dual-gate ZnO thin-film transistors with SiNx as Dielectric Layer Young Su Kim, Min Ho Kang (National Nanofab Center), Kang Suk Jeong (Chungnam National Univ.), Jae Sub Oh, Dong Eun Yoo (National Nanofab Center), Hi Deok Lee, Ga-Won Lee (Chungnam National Univ.) ED2010-50 SDM2010-51 |
[more] | ED2010-50 SDM2010-51 pp.7-8 |
| ED, SDM | 2010-06-30 11:20 |
Tokyo | Tokyo Inst. of Tech. Ookayama Campus | [Invited Talk]
Piezoelectric material based passive RFID tags Hyunchul Bae, Jaekwon Kim, Jinwook Burm (Sogang Univ.) ED2010-51 SDM2010-52 |
[more] | ED2010-51 SDM2010-52 pp.9-10 |
| ED, SDM | 2010-06-30 12:00 |
Tokyo | Tokyo Inst. of Tech. Ookayama Campus | [Invited Talk]
Low-temperature Epitaxial Growth of Ferromagnetic Silicide for SiGe Based Spintransistors Masanobu Miyao (Kyushu Univ.), Kohei Hamaya (Kyushu Univ./JST) ED2010-52 SDM2010-53 |
Recent our progress in low temperature molecular beam epitaxy of magnetic silicide (Fe3Si) on group-IV-semiconductor (Si... [more] | ED2010-52 SDM2010-53 pp.11-13 |
| ED, SDM | 2010-06-30 12:25 |
Tokyo | Tokyo Inst. of Tech. Ookayama Campus | [Invited Talk]
Toward high-efficiency thin-film solar cells using semiconducting BaSi2 Takashi Suemasu, Mitsutaka Saito, Atsushi Okada, Katsuaki Tou, Ajimal Khan (Univ. of Tsukuba.), Noritaka Usami (Tohoku Univ.) ED2010-53 SDM2010-54 |
[more] | ED2010-53 SDM2010-54 pp.15-19 |
| ED, SDM | 2010-06-30 12:50 |
Tokyo | Tokyo Inst. of Tech. Ookayama Campus | [Invited Talk]
Applications of Smart Cut(TM) Technologies to III-V Based Engineered Substrates Makoto Yoshimi (Soitec) ED2010-54 SDM2010-55 |
Smart Cut technology is now widely used to fabricate SOI (silicon-on-insulator) technologies targeting MPUs, RF devices,... [more] | ED2010-54 SDM2010-55 pp.21-22 |
| ED, SDM | 2010-06-30 14:25 |
Tokyo | Tokyo Inst. of Tech. Ookayama Campus | A New Cone-Type 1T DRAM Cell Gil Sung Lee, Doo-Hyun Kim, Jang-Gn Yun, Jung Hoon Lee, Yoon Kim, Jong-Ho Lee, Hyungcheol Shin, Byung-Gook Park (Seoul National Univ.) ED2010-55 SDM2010-56 |
[more] | ED2010-55 SDM2010-56 pp.23-25 |
| ED, SDM | 2010-06-30 14:40 |
Tokyo | Tokyo Inst. of Tech. Ookayama Campus | Dependence of Ag film thickness on Formation of Ag Nano-crystals to Fabricate Polymer Nonvolatile Memory Jong-Dae Lee, Hyun-Min Seung, Kyoung-Cheol Kwon, Jea-Gun Park (Hanyang Univ.) ED2010-56 SDM2010-57 |
[more] | ED2010-56 SDM2010-57 pp.27-30 |
| ED, SDM | 2010-06-30 14:55 |
Tokyo | Tokyo Inst. of Tech. Ookayama Campus | The Impact of H2 Anneal on Resistive Switching in Pt/TiO2/Pt Structure Guobin Wei, Yuta Goto, Akio Ohta, Katsunori Makihara, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima Univ.) ED2010-57 SDM2010-58 |
Resistive switching of Metal-Insulator-Metal (MIM) consisting of a MOCVD TiO2 layer sandwiched with Pt electrodes has b... [more] |
ED2010-57 SDM2010-58 pp.31-36 |
| ED, SDM | 2010-06-30 15:10 |
Tokyo | Tokyo Inst. of Tech. Ookayama Campus | Threshold Voltage Roll-off Mechanisms in SONOS Flash Memory in Retention Mode Including Trapped Charge Redistribution Effect Doo-Hyun Kim, Gil Sung Lee, Seongjae Cho, Jung Hoon Lee, Jang-Gn Yun, Dong Hua Li, Yoon Kim, Se Hwan Park, Won Bo Shim, Wandong Kim, Byung-Gook Park (Seoul National Univ.) ED2010-58 SDM2010-59 |
[more] | ED2010-58 SDM2010-59 pp.37-40 |
| ED, SDM | 2010-06-30 15:40 |
Tokyo | Tokyo Inst. of Tech. Ookayama Campus | Vertical Organic Field Effect Transistors with an Additional Gate Insulation Structure between Active Layer and Gate Electrode Donghyun Kim, Jaewook Jeong, Yongtaek Hong (Seoul National Univ.) ED2010-59 SDM2010-60 |
[more] | ED2010-59 SDM2010-60 pp.41-42 |
| ED, SDM | 2010-06-30 15:55 |
Tokyo | Tokyo Inst. of Tech. Ookayama Campus | Investigation of n-type pentacene based MOS diodes with ultra-thin metal interface layer Young uk Song, Shun-ichiro Ohmi (Tokyo Inst. of Tech.) ED2010-60 SDM2010-61 |
[more] | ED2010-60 SDM2010-61 pp.43-46 |
| ED, SDM | 2010-06-30 16:10 |
Tokyo | Tokyo Inst. of Tech. Ookayama Campus | Fundamental oscillations at ~900 GHz with low bias voltages in RTDs having spike-doped structures Safumi Suzuki, Kiyohito Sawada, Atsushi Teranishi, Masahiro Asada (Tokyo Inst. of Tech.), Hiroki Sugiyama, Haruki Yokoyama (NTT) ED2010-61 SDM2010-62 |
We demonstrate fundamental oscillations at around 900 GHz with low bias voltages in resonant tunnelling diodes (RTDs) ha... [more] | ED2010-61 SDM2010-62 pp.47-48 |
| ED, SDM | 2010-06-30 16:25 |
Tokyo | Tokyo Inst. of Tech. Ookayama Campus | Analysis of low loss and wideband characteristics for monolithic isolators using resonant tunneling diodes Nobuhiko Tanaka, Mitsufumi Saito, Michihiko Suhara (Tokyo Metro. Univ.) ED2010-62 SDM2010-63 |
A resonant tunneling diode (RTD) is one of high-speed electron devices with negative differential resistance (NDR) chara... [more] | ED2010-62 SDM2010-63 pp.49-53 |
| ED, SDM | 2010-06-30 16:40 |
Tokyo | Tokyo Inst. of Tech. Ookayama Campus | Investigation of Abnormal Drain Current Increase of Tunneling Field-Effect Transistors Min Jin Lee, Woo Younhg Choi (Sogang Univ.) ED2010-63 SDM2010-64 |
[more] | ED2010-63 SDM2010-64 pp.55-56 |
| ED, SDM | 2010-06-30 16:55 |
Tokyo | Tokyo Inst. of Tech. Ookayama Campus | A design of Novel IGBT with Oblique Trench Gate Juhyun Oh, Dae Hwan Chun (Koria Univ.), Eui Bok Lee (Koria Univ./KIST), Young Hwan Kim, Chun Keun Kim (KIST), Byeong Kwon Ju, Man Young Sung (Koria Univ.), Yong Tae Kim (KIST) ED2010-64 SDM2010-65 |
[more] | ED2010-64 SDM2010-65 pp.57-59 |
| ED, SDM | 2010-06-30 17:10 |
Tokyo | Tokyo Inst. of Tech. Ookayama Campus | Electrical Characteristics of Atomic Layer Deposited Tungsten Nitride Diffusion Barrier for Cu Interconnects Yong Tae Kim (KIST), Eui Bok Lee (Koria Univ./KIST), Young Hwan Kim, Chun Keun Kim (KIST), Byeong Kwon Ju (Koria Univ.) ED2010-65 SDM2010-66 |
[more] | ED2010-65 SDM2010-66 pp.61-63 |
| ED, SDM | 2010-06-30 14:25 |
Tokyo | Tokyo Inst. of Tech. Ookayama Campus | [Invited Talk]
Synthesis of wafer scale graphene layer for future electronic devices Byung Jin Cho, Jeong Hun Mun (KAIST) ED2010-66 SDM2010-67 |
[more] | ED2010-66 SDM2010-67 pp.65-67 |
| ED, SDM | 2010-06-30 14:50 |
Tokyo | Tokyo Inst. of Tech. Ookayama Campus | [Invited Talk]
Graphene channel FET: A New Candidate for High-Speed Devices Tetsuya Suemitsu (Tohoku Univ.) ED2010-67 SDM2010-68 |
Graphene is a single layer of graphite and is now one of exciting area of research because of its potential of high carr... [more] | ED2010-67 SDM2010-68 pp.69-72 |
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