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Technical Committee on Electron Devices (ED)  (Searched in: 2007)

Search Results: Keywords 'from:2008-01-16 to:2008-01-16'

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Search Results: Conference Papers
 Conference Papers (Available on Advance Programs)  (Sort by: Date Ascending)
 Results 1 - 20 of 31  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, MW 2008-01-16
13:00
Tokyo Kikai-Shinko-Kaikan Bldg. Analysis of Field-Plate Effects on Buffer-Related Current Collapse in GaN-Based FETs
Keiichi Itagaki, Atsushi Nakajima, Kazushige Horio (Shibaura Inst. Tech.) ED2007-206 MW2007-137
 [more] ED2007-206 MW2007-137
pp.1-5
ED, MW 2008-01-16
13:25
Tokyo Kikai-Shinko-Kaikan Bldg. Surface passivation of GaN using electorchemical process
Nanako Shiozaki, Tamotsu Hashizume (Hokkaido Univ.) ED2007-207 MW2007-138
The oxidation condition of n-GaN by wet chemical process was optimized. The bias voltage for oxidation was decided by cy... [more] ED2007-207 MW2007-138
pp.7-10
ED, MW 2008-01-16
13:50
Tokyo Kikai-Shinko-Kaikan Bldg. Effects of a thermal CVD SiN passivation film on electrical characteristics of AlGaN/GaN HEMTs
Toshiharu Marui, Shinichi Hoshi, Yoshiaki Morino, Masanori Itoh, Isao Tamai, Fumihiko Toda, Hideyuki Okita, Yoshiaki Sano, Shohei Seki (OKI) ED2007-208 MW2007-139
In AlGaN/GaN HEMTs, we used a thermal CVD SiN surface passivation film for suppressing the current collapse due to AlGaN... [more] ED2007-208 MW2007-139
pp.11-15
ED, MW 2008-01-16
14:25
Tokyo Kikai-Shinko-Kaikan Bldg. GaN HEMT Doherty Amplifiers for W-CDMA and WiMAX Base Station Applications
Hiroaki Sano, Norihiko Ui, Seigo Sano (Eudyna Devices) ED2007-209 MW2007-140
Two types of Doherty amplifiers for mobile communication base stations have been developed using GaN HEMTs biased at dra... [more] ED2007-209 MW2007-140
pp.17-22
ED, MW 2008-01-16
14:50
Tokyo Kikai-Shinko-Kaikan Bldg. C-band High Efficiency GaN HEMT Power Amplifiers
Koji Yamanaka, Hiroshi Otsuka, Kazutomi Mori, Hifumi Noto (Mitsubishi Elec. Corp.) ED2007-210 MW2007-141
In this paper, GaN HEMT high power amplifiers operating at C-band are presented. Cat-CVD technique and cell division con... [more] ED2007-210 MW2007-141
pp.23-28
ED, MW 2008-01-16
15:25
Tokyo Kikai-Shinko-Kaikan Bldg. An 87W AlGaN/GaN HEMT for X-band Pulse Operation
Makoto Nishihara, Takashi Tamamoto, Kazutaka Inoue, Masahiro Nishi, Seigo Sano (Eudyna) ED2007-211 MW2007-142
In this paper, we report our result of a 60W AlGaN/GaN HEMT with the operating frequency in X-band. The device technolog... [more] ED2007-211 MW2007-142
pp.29-31
ED, MW 2008-01-16
15:50
Tokyo Kikai-Shinko-Kaikan Bldg. CW 20-W AlGaN/GaN FET power amplifier for quasi-millimeter wave applications
Yasuhiro Murase, Akio Wakejima, Takashi Inoue, Katsumi Yamanoguchi, Masahiro Tanomura, Tatsuo Nakayama, Yasuhiro Okamoto, Kazuki Ota, Yuji Ando, Naotaka Kuroda, Kohji Matsunaga, Hironobu Miyamoto (FED) ED2007-212 MW2007-143
This paper describes an AlGaN/GaN FET power amplifier module delivering a continuous wave (CW) output power of more than... [more] ED2007-212 MW2007-143
pp.33-38
ED, MW 2008-01-16
16:15
Tokyo Kikai-Shinko-Kaikan Bldg. 10400V Blocking Voltage AlGaN/GaN Power HFET
Daisuke Shibata, Yasuhiro Uemoto, Manabu Yanagihara, Hidetoshi Ishida (Panasonic), Shuichi Nagai (Panasonic Boston Lab.), Hisayoshi Matsuo (Panasonic), Ming Li (Panasonic Boston Lab.), Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda (Panasonic) ED2007-213 MW2007-144
We report ultra high blocking voltage AlGaN/GaN heterojunction transistors (HFETs) on sapphire using via-holes and thick... [more] ED2007-213 MW2007-144
pp.39-43
ED, MW 2008-01-17
09:45
Tokyo Kikai-Shinko-Kaikan Bldg. Examination of dual band CMOS RF power amplifier circuit
Jun Kikuchi (Gunma Univ.), Hisayasu Sato (Renesas Technology Corporation), Noboru Ishihara (Gunma Univ.) ED2007-214 MW2007-145
Dual-band CMOS RF power amplifier circuit design techniques have been studied. In CMOS power amplifier design with low p... [more] ED2007-214 MW2007-145
pp.45-50
ED, MW 2008-01-17
10:10
Tokyo Kikai-Shinko-Kaikan Bldg. Wide-Band BPSK CMOS Demodulator Circuit
Yasuyuki Arai, Jun Kikuchi, Ryuichi Ujiie, Kenichi Shibata (Gunma Univ.), Tetuya Hirama, Hisayasu Sato (Renesas Technology), Noboru Ishihara (Gunma Univ.) ED2007-215 MW2007-146
In recent LSI systems, the wiring connections between the LSI and the LSI or the board and the board have become high de... [more] ED2007-215 MW2007-146
pp.51-56
ED, MW 2008-01-17
10:35
Tokyo Kikai-Shinko-Kaikan Bldg. Millimeter-wave quadruple harmonic image rejection mixer
Kenji Kawakami, Kazuhiro Nishida, Morishige Hieda (Mitsubishi Electric) ED2007-216 MW2007-147
This paper presents a low spurious quadruple harmonic image rejection mixer (IRM).
In order to achieve a low spurious p... [more]
ED2007-216 MW2007-147
pp.57-60
ED, MW 2008-01-17
11:10
Tokyo Kikai-Shinko-Kaikan Bldg. Improvement in reliability of InGaP/GaAs HBT's by ledge passivation
Fu-Ying Yang, Shinji Nozaki, Kazuo Uchida, Atsushi Koizumi (UEC) ED2007-217 MW2007-148
Because of the exposed heavily carbor-doped GaAs base in the InGaP/GaAs HBT’s, the current gain is significantly reduced... [more] ED2007-217 MW2007-148
pp.61-66
ED, MW 2008-01-17
11:35
Tokyo Kikai-Shinko-Kaikan Bldg. Highly reliable 0.5-um-emitter InP/InGaAs HBT
Norihide Kashio, Kenji Kurishima, Yoshino K. Fukai, Shoji Yamahata (NTT) ED2007-218 MW2007-149
 [more] ED2007-218 MW2007-149
pp.67-70
ED, MW 2008-01-17
13:00
Tokyo Kikai-Shinko-Kaikan Bldg. A Study on a Current-Mirror Based GaAs HBT RF Power Detector for Wireless Applications
Kazuya Yamamoto, Miyo Miyashita, Hitoshi Kurusu, Nobuyuki Ogawa, Teruyuki Shimura (MELCO) ED2007-219 MW2007-150
This paper describes circuit design and measurement results of a newly developed GaAs-HBT RF power detector for use in w... [more] ED2007-219 MW2007-150
pp.71-76
ED, MW 2008-01-17
13:25
Tokyo Kikai-Shinko-Kaikan Bldg. Fully Integrated HBT MMIC Power Amplifier Modules for Use in 2.5/3.5-GHz-Band WiMAX Applications
Miyo Miyashita, Toshio Okuda, Hitoshi Kurusu (MELCO), Shoichi Shimamura, Shinsuke Konishi (WTI), Junichi Udomoto, Ryo Matsushita, Yoshinobu Sasaki, Satoshi Suzuki, Takeshi Miura (MELCO), Yoshio Takahara (RSE), Makio Komaru, Kazuya Yamamoto (MELCO) ED2007-220 MW2007-151
This paper describes two GaAs HBT MMIC power amplifier modules (PAs) for 2.5-GHz- and 3.5-GHz-band WiMAX applications. E... [more] ED2007-220 MW2007-151
pp.77-82
ED, MW 2008-01-17
13:50
Tokyo Kikai-Shinko-Kaikan Bldg. 1.8 V operation Power Amplifier IC for Bluetooth Class 1 utilizing p+-GaAs Gate Hetero-junction FET
Fumio Harima, Yasunori Bito, Hidemasa Takahashi, Naotaka Iwata (NEC Electronics) ED2007-221 MW2007-152
We have developed a power amplifier IC for Bluetooth Class 1 operating at single low voltage of 1.8 V. We can realize it... [more] ED2007-221 MW2007-152
pp.83-86
ED, MW 2008-01-17
14:25
Tokyo Kikai-Shinko-Kaikan Bldg. Test fabrication of small and high power amplifier circuits for active phased array antennas.
Shigeaki Kawai, Shigeo Kawasaki, Harunobu Seita, Naoki Shinohara, Tomohiko Mitani (Kyoto Univ.) ED2007-222 MW2007-153
 [more] ED2007-222 MW2007-153
pp.87-92
ED, MW 2008-01-17
14:50
Tokyo Kikai-Shinko-Kaikan Bldg. A 26GHz Short-Range UWB Vehicular-Radar Using 2.5Gcps Spread Spectrum Modulation
Takeshi Fukuda, Noboru Negoro, Shinji Ujita, Shuichi Nagai, Masaaki Nishijima, Hiroyuki Sakai, Tsuyoshi Tanaka, Daisuke Ueda (Matsushita Electric) ED2007-223 MW2007-154
A 26GHz short-range radar system has been developed based on a 2.5Gcps direct sequence spread spectrum technique combine... [more] ED2007-223 MW2007-154
pp.93-97
ED, MW 2008-01-17
15:25
Tokyo Kikai-Shinko-Kaikan Bldg. [Special Talk] A Report on the European Microwave Conference 2007
Futoshi Kuroki (Kure Nat'l Coll of Tech), Eizo Mitani (Udina), Yo Yamaguchi, Munenari Kawashima (NTT), Kenichi Okada (Tokyo Inst of Tech), Shoichi Narahashi, Kunihiro Kawai (NTT Docomo), Haruo Kawakami (Antenna Giken), Yusuke Kitsukawa (Mitsubishi Elec Co), Takaharu Hiraoka, Tetsuo Anada, Chun-Ping Chen (Kanagawa Univ) ED2007-224 MW2007-155
 [more] ED2007-224 MW2007-155
pp.99-113
ED, MW 2008-01-18
10:20
Tokyo Kikai-Shinko-Kaikan Bldg. Multi-Band Differential Amplifiers with Stacked Resonators
Toshio Shinohara, Masaki Shirata, Minoru Sato, Yasushi Itoh (Shonan Inst. of Tech.) ED2007-225 MW2007-156
A quad-band differential SiGe HBT amplifier with an equalized gain has been developed by using stacked LCR tank circuits... [more] ED2007-225 MW2007-156
pp.115-118
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