Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
ED, MW |
2008-01-16 13:00 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Analysis of Field-Plate Effects on Buffer-Related Current Collapse in GaN-Based FETs Keiichi Itagaki, Atsushi Nakajima, Kazushige Horio (Shibaura Inst. Tech.) ED2007-206 MW2007-137 |
[more] |
ED2007-206 MW2007-137 pp.1-5 |
ED, MW |
2008-01-16 13:25 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Surface passivation of GaN using electorchemical process Nanako Shiozaki, Tamotsu Hashizume (Hokkaido Univ.) ED2007-207 MW2007-138 |
The oxidation condition of n-GaN by wet chemical process was optimized. The bias voltage for oxidation was decided by cy... [more] |
ED2007-207 MW2007-138 pp.7-10 |
ED, MW |
2008-01-16 13:50 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Effects of a thermal CVD SiN passivation film on electrical characteristics of AlGaN/GaN HEMTs Toshiharu Marui, Shinichi Hoshi, Yoshiaki Morino, Masanori Itoh, Isao Tamai, Fumihiko Toda, Hideyuki Okita, Yoshiaki Sano, Shohei Seki (OKI) ED2007-208 MW2007-139 |
In AlGaN/GaN HEMTs, we used a thermal CVD SiN surface passivation film for suppressing the current collapse due to AlGaN... [more] |
ED2007-208 MW2007-139 pp.11-15 |
ED, MW |
2008-01-16 14:25 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
GaN HEMT Doherty Amplifiers for W-CDMA and WiMAX Base Station Applications Hiroaki Sano, Norihiko Ui, Seigo Sano (Eudyna Devices) ED2007-209 MW2007-140 |
Two types of Doherty amplifiers for mobile communication base stations have been developed using GaN HEMTs biased at dra... [more] |
ED2007-209 MW2007-140 pp.17-22 |
ED, MW |
2008-01-16 14:50 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
C-band High Efficiency GaN HEMT Power Amplifiers Koji Yamanaka, Hiroshi Otsuka, Kazutomi Mori, Hifumi Noto (Mitsubishi Elec. Corp.) ED2007-210 MW2007-141 |
In this paper, GaN HEMT high power amplifiers operating at C-band are presented. Cat-CVD technique and cell division con... [more] |
ED2007-210 MW2007-141 pp.23-28 |
ED, MW |
2008-01-16 15:25 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
An 87W AlGaN/GaN HEMT for X-band Pulse Operation Makoto Nishihara, Takashi Tamamoto, Kazutaka Inoue, Masahiro Nishi, Seigo Sano (Eudyna) ED2007-211 MW2007-142 |
In this paper, we report our result of a 60W AlGaN/GaN HEMT with the operating frequency in X-band. The device technolog... [more] |
ED2007-211 MW2007-142 pp.29-31 |
ED, MW |
2008-01-16 15:50 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
CW 20-W AlGaN/GaN FET power amplifier for quasi-millimeter wave applications Yasuhiro Murase, Akio Wakejima, Takashi Inoue, Katsumi Yamanoguchi, Masahiro Tanomura, Tatsuo Nakayama, Yasuhiro Okamoto, Kazuki Ota, Yuji Ando, Naotaka Kuroda, Kohji Matsunaga, Hironobu Miyamoto (FED) ED2007-212 MW2007-143 |
This paper describes an AlGaN/GaN FET power amplifier module delivering a continuous wave (CW) output power of more than... [more] |
ED2007-212 MW2007-143 pp.33-38 |
ED, MW |
2008-01-16 16:15 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
10400V Blocking Voltage AlGaN/GaN Power HFET Daisuke Shibata, Yasuhiro Uemoto, Manabu Yanagihara, Hidetoshi Ishida (Panasonic), Shuichi Nagai (Panasonic Boston Lab.), Hisayoshi Matsuo (Panasonic), Ming Li (Panasonic Boston Lab.), Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda (Panasonic) ED2007-213 MW2007-144 |
We report ultra high blocking voltage AlGaN/GaN heterojunction transistors (HFETs) on sapphire using via-holes and thick... [more] |
ED2007-213 MW2007-144 pp.39-43 |
ED, MW |
2008-01-17 09:45 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Examination of dual band CMOS RF power amplifier circuit Jun Kikuchi (Gunma Univ.), Hisayasu Sato (Renesas Technology Corporation), Noboru Ishihara (Gunma Univ.) ED2007-214 MW2007-145 |
Dual-band CMOS RF power amplifier circuit design techniques have been studied. In CMOS power amplifier design with low p... [more] |
ED2007-214 MW2007-145 pp.45-50 |
ED, MW |
2008-01-17 10:10 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Wide-Band BPSK CMOS Demodulator Circuit Yasuyuki Arai, Jun Kikuchi, Ryuichi Ujiie, Kenichi Shibata (Gunma Univ.), Tetuya Hirama, Hisayasu Sato (Renesas Technology), Noboru Ishihara (Gunma Univ.) ED2007-215 MW2007-146 |
In recent LSI systems, the wiring connections between the LSI and the LSI or the board and the board have become high de... [more] |
ED2007-215 MW2007-146 pp.51-56 |
ED, MW |
2008-01-17 10:35 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Millimeter-wave quadruple harmonic image rejection mixer Kenji Kawakami, Kazuhiro Nishida, Morishige Hieda (Mitsubishi Electric) ED2007-216 MW2007-147 |
This paper presents a low spurious quadruple harmonic image rejection mixer (IRM).
In order to achieve a low spurious p... [more] |
ED2007-216 MW2007-147 pp.57-60 |
ED, MW |
2008-01-17 11:10 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Improvement in reliability of InGaP/GaAs HBT's by ledge passivation Fu-Ying Yang, Shinji Nozaki, Kazuo Uchida, Atsushi Koizumi (UEC) ED2007-217 MW2007-148 |
Because of the exposed heavily carbor-doped GaAs base in the InGaP/GaAs HBT’s, the current gain is significantly reduced... [more] |
ED2007-217 MW2007-148 pp.61-66 |
ED, MW |
2008-01-17 11:35 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Highly reliable 0.5-um-emitter InP/InGaAs HBT Norihide Kashio, Kenji Kurishima, Yoshino K. Fukai, Shoji Yamahata (NTT) ED2007-218 MW2007-149 |
[more] |
ED2007-218 MW2007-149 pp.67-70 |
ED, MW |
2008-01-17 13:00 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
A Study on a Current-Mirror Based GaAs HBT RF Power Detector for Wireless Applications Kazuya Yamamoto, Miyo Miyashita, Hitoshi Kurusu, Nobuyuki Ogawa, Teruyuki Shimura (MELCO) ED2007-219 MW2007-150 |
This paper describes circuit design and measurement results of a newly developed GaAs-HBT RF power detector for use in w... [more] |
ED2007-219 MW2007-150 pp.71-76 |
ED, MW |
2008-01-17 13:25 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Fully Integrated HBT MMIC Power Amplifier Modules for Use in 2.5/3.5-GHz-Band WiMAX Applications Miyo Miyashita, Toshio Okuda, Hitoshi Kurusu (MELCO), Shoichi Shimamura, Shinsuke Konishi (WTI), Junichi Udomoto, Ryo Matsushita, Yoshinobu Sasaki, Satoshi Suzuki, Takeshi Miura (MELCO), Yoshio Takahara (RSE), Makio Komaru, Kazuya Yamamoto (MELCO) ED2007-220 MW2007-151 |
This paper describes two GaAs HBT MMIC power amplifier modules (PAs) for 2.5-GHz- and 3.5-GHz-band WiMAX applications. E... [more] |
ED2007-220 MW2007-151 pp.77-82 |
ED, MW |
2008-01-17 13:50 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
1.8 V operation Power Amplifier IC for Bluetooth Class 1 utilizing p+-GaAs Gate Hetero-junction FET Fumio Harima, Yasunori Bito, Hidemasa Takahashi, Naotaka Iwata (NEC Electronics) ED2007-221 MW2007-152 |
We have developed a power amplifier IC for Bluetooth Class 1 operating at single low voltage of 1.8 V. We can realize it... [more] |
ED2007-221 MW2007-152 pp.83-86 |
ED, MW |
2008-01-17 14:25 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Test fabrication of small and high power amplifier circuits for active phased array antennas. Shigeaki Kawai, Shigeo Kawasaki, Harunobu Seita, Naoki Shinohara, Tomohiko Mitani (Kyoto Univ.) ED2007-222 MW2007-153 |
[more] |
ED2007-222 MW2007-153 pp.87-92 |
ED, MW |
2008-01-17 14:50 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
A 26GHz Short-Range UWB Vehicular-Radar Using 2.5Gcps Spread Spectrum Modulation Takeshi Fukuda, Noboru Negoro, Shinji Ujita, Shuichi Nagai, Masaaki Nishijima, Hiroyuki Sakai, Tsuyoshi Tanaka, Daisuke Ueda (Matsushita Electric) ED2007-223 MW2007-154 |
A 26GHz short-range radar system has been developed based on a 2.5Gcps direct sequence spread spectrum technique combine... [more] |
ED2007-223 MW2007-154 pp.93-97 |
ED, MW |
2008-01-17 15:25 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Special Talk]
A Report on the European Microwave Conference 2007 Futoshi Kuroki (Kure Nat'l Coll of Tech), Eizo Mitani (Udina), Yo Yamaguchi, Munenari Kawashima (NTT), Kenichi Okada (Tokyo Inst of Tech), Shoichi Narahashi, Kunihiro Kawai (NTT Docomo), Haruo Kawakami (Antenna Giken), Yusuke Kitsukawa (Mitsubishi Elec Co), Takaharu Hiraoka, Tetsuo Anada, Chun-Ping Chen (Kanagawa Univ) ED2007-224 MW2007-155 |
[more] |
ED2007-224 MW2007-155 pp.99-113 |
ED, MW |
2008-01-18 10:20 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Multi-Band Differential Amplifiers with Stacked Resonators Toshio Shinohara, Masaki Shirata, Minoru Sato, Yasushi Itoh (Shonan Inst. of Tech.) ED2007-225 MW2007-156 |
A quad-band differential SiGe HBT amplifier with an equalized gain has been developed by using stacked LCR tank circuits... [more] |
ED2007-225 MW2007-156 pp.115-118 |