Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
CPM, LQE, ED |
2019-11-21 10:10 |
Shizuoka |
Shizuoka Univ. (Hamamatsu) |
Investigation of flat thin film growth conditions in ALD growth of ZnO Ryo Yamamoto, Hiroto Kano, Atsushi Nakamura, Wataru Inami (Shizuoka Univ.) ED2019-33 CPM2019-52 LQE2019-76 |
[more] |
ED2019-33 CPM2019-52 LQE2019-76 pp.1-4 |
CPM, LQE, ED |
2019-11-21 10:30 |
Shizuoka |
Shizuoka Univ. (Hamamatsu) |
Optical properties of ZnO crystals grown at high temperature on c c-plane sapphire substrates by mist mist-CVD Kosei Ohashi, Kenya Fujiwara, Mikihiro Yamamoto, Kazuhiko Hara (Shizuoka Univ.), Masaru Sakai (Univ. of Yamanashi), Tetsuya Kouno (Shizuoka Univ.) ED2019-34 CPM2019-53 LQE2019-77 |
[more] |
ED2019-34 CPM2019-53 LQE2019-77 pp.5-8 |
CPM, LQE, ED |
2019-11-21 10:50 |
Shizuoka |
Shizuoka Univ. (Hamamatsu) |
Structural and Photoluminescence Properties of ZnO Nanorods Grown on Various TCO Seed Layers by Chemical Bath Deposition Kohdai Hamamoto, Tomoaki Terasako (Ehime Univ.), Masakazu Yagi (Natl. Inst. Technol., Kagawa Coll.), Yutaka Furubayashi, Tetsuya Yamamoto (Kochi Univ. Technol.) ED2019-35 CPM2019-54 LQE2019-78 |
[more] |
ED2019-35 CPM2019-54 LQE2019-78 pp.9-13 |
CPM, LQE, ED |
2019-11-21 11:10 |
Shizuoka |
Shizuoka Univ. (Hamamatsu) |
Chemical Bath Deposition of ZnO Nanorods on Very Thin GZO Seed Layers and Their Structural and Optical Properties Tomoaki Terasako, Kohdai Hamamoto, Kenta Yamada, Shinichiro Kohda (Ehime Univ.), Masakazu Yagi (Natl. Inst. Technol., Kagawa Coll.), Yutaka Furubayashi, Tetsuya Yamamoto (Kochi Univ. Technol.) ED2019-36 CPM2019-55 LQE2019-79 |
[more] |
ED2019-36 CPM2019-55 LQE2019-79 pp.15-20 |
ED |
2019-11-21 13:00 |
Tokyo |
|
Improvement of electron trajectory calculation in an electromagnetic field using Runge-Kutta-Fehlberg fourth order method Takahiro Ikeda, Hidekazu Murata, Hiroshi Shimoyama (Meijo Univ.) ED2019-59 |
[more] |
ED2019-59 pp.1-4 |
CPM, LQE, ED |
2019-11-21 12:20 |
Shizuoka |
Shizuoka Univ. (Hamamatsu) |
Photocatalytic properties of ZnO modified by electrochemical treatment Koji Abe, Atsuhito Otake (Nitech) ED2019-37 CPM2019-56 LQE2019-80 |
Photocatalytic activity of zinc oxide (ZnO) thin films were improved by an electrochemical reduction treatment. The impr... [more] |
ED2019-37 CPM2019-56 LQE2019-80 pp.21-24 |
CPM, LQE, ED |
2019-11-21 12:40 |
Shizuoka |
Shizuoka Univ. (Hamamatsu) |
Load resistance and area dependence in β-Ga2O3 diode RF-DC converter circuit Makoto Hashikawa, Kosuke Urata, Takumi Takenohata, Toshiyuki Oishi, Takayoshi Oshima (Saga Univ.) ED2019-38 CPM2019-57 LQE2019-81 |
[more] |
ED2019-38 CPM2019-57 LQE2019-81 pp.25-28 |
CPM, LQE, ED |
2019-11-21 13:00 |
Shizuoka |
Shizuoka Univ. (Hamamatsu) |
Improvement of Short-Channel Effects in Normally-off GaN MOSFETs with Deep Recessed-Gate Structure Daimotsu Kato, Yosuke Kajiwara, Akira Mukai, Hiroshi Ono, Aya Shindome, Jumpei Tajima, Toshiki Hikosaka, Masahiko Kuraguchi, Shinya Nunoue (Toshiba) ED2019-39 CPM2019-58 LQE2019-82 |
We have demonstrated the suppression of SCEs in normally-off GaN MOSFETs with deep recessed-gate structure. TCAD simulat... [more] |
ED2019-39 CPM2019-58 LQE2019-82 pp.29-32 |
CPM, LQE, ED |
2019-11-21 13:20 |
Shizuoka |
Shizuoka Univ. (Hamamatsu) |
Characterization of plasma-induced damage of GaN trench sidewall formed by ICP-RIE Shinji Yamada, Hideki Sakurai (Nagoya Univ./ULVAC), Yamato Osada, Toshiyuki Nakamura, Ryuichiro Kamimura (ULVAC), Jun Suda, Tetsu Kachi (Nagoya Univ.) ED2019-40 CPM2019-59 LQE2019-83 |
(To be available after the conference date) [more] |
ED2019-40 CPM2019-59 LQE2019-83 pp.33-35 |
ED |
2019-11-21 13:25 |
Tokyo |
|
Field emission current from carbon nanotubes calculated by time-dependent density functional theory Toshiharu Higuchi, Yoichi Yamada, Masahiro Sasaki (Tsukuba Univ.) ED2019-60 |
We calculated the field emission current of three types of carbon nanotubes; (5,5) armchair, (9,0) zigzag and (7,0) zigz... [more] |
ED2019-60 pp.5-8 |
CPM, LQE, ED |
2019-11-21 13:55 |
Shizuoka |
Shizuoka Univ. (Hamamatsu) |
Estimation of device characteristics of AlGaN/GaN MIS-HEMTs with SiO2/Al2O3 double insulators fabricated by ALD Shunichi Yokoi, Keita Furuoka, Toshiharu Kubo, Takashi Egawa (Nagoya Inst. of Tech.) ED2019-41 CPM2019-60 LQE2019-84 |
SiO2 has a relatively large band gap of approximately 9 eV. Therefore, by fabricating SiO2/Al2O3 double insulators, GaN-... [more] |
ED2019-41 CPM2019-60 LQE2019-84 pp.37-40 |
CPM, LQE, ED |
2019-11-21 14:15 |
Shizuoka |
Shizuoka Univ. (Hamamatsu) |
Fabrication of GaN-QPM crystal using DP-SAG and evaluation of optical characterization for SHG Kai Matsuhisa, Yuto Kobayashi, Hiroki Ishihara, Mako Sugiura, Atsushi Sugita, Yoku Inoue, Takayuki Nakano (Shizuoka Univ.) ED2019-42 CPM2019-61 LQE2019-85 |
[more] |
ED2019-42 CPM2019-61 LQE2019-85 pp.41-44 |
CPM, LQE, ED |
2019-11-21 14:35 |
Shizuoka |
Shizuoka Univ. (Hamamatsu) |
AlGaN-based electron beam excitation UV lasers using AlGaN well layer Yusuke Sakuragi, Shinji Yasue, Shohei Teramura, Yuya Ogino, Syunya Tanaka, Sho Iwayama, Motoaki Iwaya, Satoshi Kamiyama, Tetsuya Takeuchi, Iwamu Akasaki (Meijo University), HIdeto Miyake (Mie University) ED2019-43 CPM2019-62 LQE2019-86 |
(To be available after the conference date) [more] |
ED2019-43 CPM2019-62 LQE2019-86 pp.45-48 |
CPM, LQE, ED |
2019-11-21 14:55 |
Shizuoka |
Shizuoka Univ. (Hamamatsu) |
Epitaxial growth of thick AlInN films on GaN and GaInN by MOCVD Mizuki Yamanaka, Makoto Miyoshi, Takashi Egawa (Nagoya Inst. Tech.), Narihito Okada, Kazuyuki Tadatomo (Yamaguchi Univ.), Tetsuya Takeuchi (Meijo Univ.) ED2019-44 CPM2019-63 LQE2019-87 |
[more] |
ED2019-44 CPM2019-63 LQE2019-87 pp.49-52 |
ED |
2019-11-21 13:50 |
Tokyo |
|
Fabrication of field emitter array with integral Si ballast resistor Hidetoshi Shinya, Hidekazu Murata, Eiji Rokuta, Hiroshi Shimoyama (Meijo Univ.), Masayoshi Nagao, Katsuhisa Murakami (AIST) ED2019-61 |
The emission current from field emitter fluctuates due to surface migration and adsorption-desorption of residual gas mo... [more] |
ED2019-61 pp.9-12 |
CPM, LQE, ED |
2019-11-21 15:30 |
Shizuoka |
Shizuoka Univ. (Hamamatsu) |
Growth, crystal and optical characterization of quaternary AlGaInN epitaxial films lattice-matched to c-plane GaN Hiroki Harada, Makoto Miyoshi, Takashi Egawa (Nagoya Inst. Tech.), Tetsuya Takeuchi (Meijo Univ.) ED2019-45 CPM2019-64 LQE2019-88 |
Quaternary AlGaInN films with thickness greater than 150 nm are grown on c-plane GaN-on-sapphire templates by metalorgan... [more] |
ED2019-45 CPM2019-64 LQE2019-88 pp.53-56 |
CPM, LQE, ED |
2019-11-21 15:50 |
Shizuoka |
Shizuoka Univ. (Hamamatsu) |
Polarization characteristics in GaN-based vertical cavity surface emitting laser with AlInN/GaN distribution bragg reflectors Kaoru Oda, Ryosuke Iida, Sho Iwayama, Kazuki Kiyohara, Tetsuya Takeuci, Satoshi Kamiyama, Motoaki Iwaya (Meijo Univ.), Isamu Akasaki (Meijo Univ./Nagoya Univ.) ED2019-46 CPM2019-65 LQE2019-89 |
In this study, we investigated polarization characteristics of GaN-based VCSELs. In particular, dependences of substrate... [more] |
ED2019-46 CPM2019-65 LQE2019-89 pp.57-60 |
ED |
2019-11-21 14:15 |
Tokyo |
|
Dielectric Barrier Discharge Characteristics by Transfer Film Method Micro-Projection Cathode Array with Various Dielectric Film Thicknesses Kosuke Shimizu, Jonghyun Moon (Shizuoka Univ.) ED2019-62 |
[more] |
ED2019-62 pp.13-16 |
ED |
2019-11-21 14:40 |
Tokyo |
|
Characteristic evaluation of field emission cathode coated with liquid gallium Yuta Takafuji, Yoichiro Neo, Hidenori Mimura (Shizuoka Univ.) ED2019-63 |
Since the field was discovered by Hata et al. That a liquid metal thin film was coated on the tip of a field emission ca... [more] |
ED2019-63 pp.17-20 |
ED |
2019-11-21 15:20 |
Tokyo |
|
Development of mA-Class Planar-Type Electron Sources Based on Graphene-Oxide-Semiconductor Structure for Micro Ion Engines Ryo Furuya (YNU/AIST), Katsuhisa Murakami, Masayoshi Nagao (AIST), Yoshinori Takao (YNU) ED2019-64 |
(To be available after the conference date) [more] |
ED2019-64 pp.21-24 |