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Technical Committee on Electron Devices (ED)  (Searched in: 2019)

Search Results: Keywords 'from:2019-11-21 to:2019-11-21'

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Search Results: Conference Papers
 Conference Papers (Available on Advance Programs)  (Sort by: Date Ascending)
 Results 1 - 20 of 43  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
CPM, LQE, ED 2019-11-21
10:10
Shizuoka Shizuoka Univ. (Hamamatsu) Investigation of flat thin film growth conditions in ALD growth of ZnO
Ryo Yamamoto, Hiroto Kano, Atsushi Nakamura, Wataru Inami (Shizuoka Univ.) ED2019-33 CPM2019-52 LQE2019-76
 [more] ED2019-33 CPM2019-52 LQE2019-76
pp.1-4
CPM, LQE, ED 2019-11-21
10:30
Shizuoka Shizuoka Univ. (Hamamatsu) Optical properties of ZnO crystals grown at high temperature on c c-plane sapphire substrates by mist mist-CVD
Kosei Ohashi, Kenya Fujiwara, Mikihiro Yamamoto, Kazuhiko Hara (Shizuoka Univ.), Masaru Sakai (Univ. of Yamanashi), Tetsuya Kouno (Shizuoka Univ.) ED2019-34 CPM2019-53 LQE2019-77
 [more] ED2019-34 CPM2019-53 LQE2019-77
pp.5-8
CPM, LQE, ED 2019-11-21
10:50
Shizuoka Shizuoka Univ. (Hamamatsu) Structural and Photoluminescence Properties of ZnO Nanorods Grown on Various TCO Seed Layers by Chemical Bath Deposition
Kohdai Hamamoto, Tomoaki Terasako (Ehime Univ.), Masakazu Yagi (Natl. Inst. Technol., Kagawa Coll.), Yutaka Furubayashi, Tetsuya Yamamoto (Kochi Univ. Technol.) ED2019-35 CPM2019-54 LQE2019-78
 [more] ED2019-35 CPM2019-54 LQE2019-78
pp.9-13
CPM, LQE, ED 2019-11-21
11:10
Shizuoka Shizuoka Univ. (Hamamatsu) Chemical Bath Deposition of ZnO Nanorods on Very Thin GZO Seed Layers and Their Structural and Optical Properties
Tomoaki Terasako, Kohdai Hamamoto, Kenta Yamada, Shinichiro Kohda (Ehime Univ.), Masakazu Yagi (Natl. Inst. Technol., Kagawa Coll.), Yutaka Furubayashi, Tetsuya Yamamoto (Kochi Univ. Technol.) ED2019-36 CPM2019-55 LQE2019-79
 [more] ED2019-36 CPM2019-55 LQE2019-79
pp.15-20
ED 2019-11-21
13:00
Tokyo   Improvement of electron trajectory calculation in an electromagnetic field using Runge-Kutta-Fehlberg fourth order method
Takahiro Ikeda, Hidekazu Murata, Hiroshi Shimoyama (Meijo Univ.) ED2019-59
 [more] ED2019-59
pp.1-4
CPM, LQE, ED 2019-11-21
12:20
Shizuoka Shizuoka Univ. (Hamamatsu) Photocatalytic properties of ZnO modified by electrochemical treatment
Koji Abe, Atsuhito Otake (Nitech) ED2019-37 CPM2019-56 LQE2019-80
Photocatalytic activity of zinc oxide (ZnO) thin films were improved by an electrochemical reduction treatment. The impr... [more] ED2019-37 CPM2019-56 LQE2019-80
pp.21-24
CPM, LQE, ED 2019-11-21
12:40
Shizuoka Shizuoka Univ. (Hamamatsu) Load resistance and area dependence in β-Ga2O3 diode RF-DC converter circuit
Makoto Hashikawa, Kosuke Urata, Takumi Takenohata, Toshiyuki Oishi, Takayoshi Oshima (Saga Univ.) ED2019-38 CPM2019-57 LQE2019-81
 [more] ED2019-38 CPM2019-57 LQE2019-81
pp.25-28
CPM, LQE, ED 2019-11-21
13:00
Shizuoka Shizuoka Univ. (Hamamatsu) Improvement of Short-Channel Effects in Normally-off GaN MOSFETs with Deep Recessed-Gate Structure
Daimotsu Kato, Yosuke Kajiwara, Akira Mukai, Hiroshi Ono, Aya Shindome, Jumpei Tajima, Toshiki Hikosaka, Masahiko Kuraguchi, Shinya Nunoue (Toshiba) ED2019-39 CPM2019-58 LQE2019-82
We have demonstrated the suppression of SCEs in normally-off GaN MOSFETs with deep recessed-gate structure. TCAD simulat... [more] ED2019-39 CPM2019-58 LQE2019-82
pp.29-32
CPM, LQE, ED 2019-11-21
13:20
Shizuoka Shizuoka Univ. (Hamamatsu) Characterization of plasma-induced damage of GaN trench sidewall formed by ICP-RIE
Shinji Yamada, Hideki Sakurai (Nagoya Univ./ULVAC), Yamato Osada, Toshiyuki Nakamura, Ryuichiro Kamimura (ULVAC), Jun Suda, Tetsu Kachi (Nagoya Univ.) ED2019-40 CPM2019-59 LQE2019-83
(To be available after the conference date) [more] ED2019-40 CPM2019-59 LQE2019-83
pp.33-35
ED 2019-11-21
13:25
Tokyo   Field emission current from carbon nanotubes calculated by time-dependent density functional theory
Toshiharu Higuchi, Yoichi Yamada, Masahiro Sasaki (Tsukuba Univ.) ED2019-60
We calculated the field emission current of three types of carbon nanotubes; (5,5) armchair, (9,0) zigzag and (7,0) zigz... [more] ED2019-60
pp.5-8
CPM, LQE, ED 2019-11-21
13:55
Shizuoka Shizuoka Univ. (Hamamatsu) Estimation of device characteristics of AlGaN/GaN MIS-HEMTs with SiO2/Al2O3 double insulators fabricated by ALD
Shunichi Yokoi, Keita Furuoka, Toshiharu Kubo, Takashi Egawa (Nagoya Inst. of Tech.) ED2019-41 CPM2019-60 LQE2019-84
SiO2 has a relatively large band gap of approximately 9 eV. Therefore, by fabricating SiO2/Al2O3 double insulators, GaN-... [more] ED2019-41 CPM2019-60 LQE2019-84
pp.37-40
CPM, LQE, ED 2019-11-21
14:15
Shizuoka Shizuoka Univ. (Hamamatsu) Fabrication of GaN-QPM crystal using DP-SAG and evaluation of optical characterization for SHG
Kai Matsuhisa, Yuto Kobayashi, Hiroki Ishihara, Mako Sugiura, Atsushi Sugita, Yoku Inoue, Takayuki Nakano (Shizuoka Univ.) ED2019-42 CPM2019-61 LQE2019-85
 [more] ED2019-42 CPM2019-61 LQE2019-85
pp.41-44
CPM, LQE, ED 2019-11-21
14:35
Shizuoka Shizuoka Univ. (Hamamatsu) AlGaN-based electron beam excitation UV lasers using AlGaN well layer
Yusuke Sakuragi, Shinji Yasue, Shohei Teramura, Yuya Ogino, Syunya Tanaka, Sho Iwayama, Motoaki Iwaya, Satoshi Kamiyama, Tetsuya Takeuchi, Iwamu Akasaki (Meijo University), HIdeto Miyake (Mie University) ED2019-43 CPM2019-62 LQE2019-86
(To be available after the conference date) [more] ED2019-43 CPM2019-62 LQE2019-86
pp.45-48
CPM, LQE, ED 2019-11-21
14:55
Shizuoka Shizuoka Univ. (Hamamatsu) Epitaxial growth of thick AlInN films on GaN and GaInN by MOCVD
Mizuki Yamanaka, Makoto Miyoshi, Takashi Egawa (Nagoya Inst. Tech.), Narihito Okada, Kazuyuki Tadatomo (Yamaguchi Univ.), Tetsuya Takeuchi (Meijo Univ.) ED2019-44 CPM2019-63 LQE2019-87
 [more] ED2019-44 CPM2019-63 LQE2019-87
pp.49-52
ED 2019-11-21
13:50
Tokyo   Fabrication of field emitter array with integral Si ballast resistor
Hidetoshi Shinya, Hidekazu Murata, Eiji Rokuta, Hiroshi Shimoyama (Meijo Univ.), Masayoshi Nagao, Katsuhisa Murakami (AIST) ED2019-61
The emission current from field emitter fluctuates due to surface migration and adsorption-desorption of residual gas mo... [more] ED2019-61
pp.9-12
CPM, LQE, ED 2019-11-21
15:30
Shizuoka Shizuoka Univ. (Hamamatsu) Growth, crystal and optical characterization of quaternary AlGaInN epitaxial films lattice-matched to c-plane GaN
Hiroki Harada, Makoto Miyoshi, Takashi Egawa (Nagoya Inst. Tech.), Tetsuya Takeuchi (Meijo Univ.) ED2019-45 CPM2019-64 LQE2019-88
Quaternary AlGaInN films with thickness greater than 150 nm are grown on c-plane GaN-on-sapphire templates by metalorgan... [more] ED2019-45 CPM2019-64 LQE2019-88
pp.53-56
CPM, LQE, ED 2019-11-21
15:50
Shizuoka Shizuoka Univ. (Hamamatsu) Polarization characteristics in GaN-based vertical cavity surface emitting laser with AlInN/GaN distribution bragg reflectors
Kaoru Oda, Ryosuke Iida, Sho Iwayama, Kazuki Kiyohara, Tetsuya Takeuci, Satoshi Kamiyama, Motoaki Iwaya (Meijo Univ.), Isamu Akasaki (Meijo Univ./Nagoya Univ.) ED2019-46 CPM2019-65 LQE2019-89
In this study, we investigated polarization characteristics of GaN-based VCSELs. In particular, dependences of substrate... [more] ED2019-46 CPM2019-65 LQE2019-89
pp.57-60
ED 2019-11-21
14:15
Tokyo   Dielectric Barrier Discharge Characteristics by Transfer Film Method Micro-Projection Cathode Array with Various Dielectric Film Thicknesses
Kosuke Shimizu, Jonghyun Moon (Shizuoka Univ.) ED2019-62
 [more] ED2019-62
pp.13-16
ED 2019-11-21
14:40
Tokyo   Characteristic evaluation of field emission cathode coated with liquid gallium
Yuta Takafuji, Yoichiro Neo, Hidenori Mimura (Shizuoka Univ.) ED2019-63
Since the field was discovered by Hata et al. That a liquid metal thin film was coated on the tip of a field emission ca... [more] ED2019-63
pp.17-20
ED 2019-11-21
15:20
Tokyo   Development of mA-Class Planar-Type Electron Sources Based on Graphene-Oxide-Semiconductor Structure for Micro Ion Engines
Ryo Furuya (YNU/AIST), Katsuhisa Murakami, Masayoshi Nagao (AIST), Yoshinori Takao (YNU) ED2019-64
(To be available after the conference date) [more] ED2019-64
pp.21-24
 Results 1 - 20 of 43  /  [Next]  
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