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Technical Committee on Electron Devices (ED)  (2015)

Chair: Michihiko Suhara (TMU) Vice Chair: Hiroki Fujishiro (Tokyo Univ. of Science)
Secretary: Tatsuya Iwata (Toyama Pref. Univ.), Junji Kotani (Fjitsu Lab.)
Assistant: Takuya Tsutsumi (NTT)

Search Results: Keywords 'from:2015-05-28 to:2015-05-28'

[Go to Official ED Homepage (Japanese)] 
Search Results: Conference Papers
 Conference Papers (Available on Advance Programs)  (Sort by: Date Ascending)
 Results 1 - 20 of 21  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, CPM, SDM 2015-05-28
13:00
Aichi Venture Business Laboratory, Toyohashi University of Technology Synthesis of graphenes by chemical vapor deposition using liquid precursor
Naoki Kishi, Takaaki Iwata, Kazuki Iwama, Jianfeng Bao, Liu Huito, Tetsuo Soga (NITech) ED2015-16 CPM2015-1 SDM2015-18
The synthesis of graphenes on Ni foils by thermal chemical vapor deposition (CVD) using ethanol as a liquid precursor ha... [more] ED2015-16 CPM2015-1 SDM2015-18
pp.1-4
ED, CPM, SDM 2015-05-28
13:25
Aichi Venture Business Laboratory, Toyohashi University of Technology Multilayer layer graphene synthesis by Microwave Surface Wave Plasma CVD, and high quality according to ultraviolet light shading
Susumu Ichimura, Hideo Uchida, Koichi Wakita (Chubu Univ.), Yasuhiko Hayashi (Okayama Univ.), Masayoshi Umeno (Chubu Univ.) ED2015-17 CPM2015-2 SDM2015-19
This study is aimed at applying the graphene as biosensor and biomaterials.From the viewpoint of reliability and electri... [more] ED2015-17 CPM2015-2 SDM2015-19
pp.5-10
ED, CPM, SDM 2015-05-28
13:50
Aichi Venture Business Laboratory, Toyohashi University of Technology Study on self-assembled monolayers by the immersion method on SiC substrate
Yuya Suzuki, Yuji Hirose, Shohei Tamaoki, Reina Miyagawa, Takatoshi Kinoshita, Osamu Eryu (NiTech) ED2015-18 CPM2015-3 SDM2015-20
(To be available after the conference date) [more] ED2015-18 CPM2015-3 SDM2015-20
pp.11-15
ED, CPM, SDM 2015-05-28
14:15
Aichi Venture Business Laboratory, Toyohashi University of Technology Optical properties of InGaN nanoplates grown by molecular beam epitaxy
Tetsuya Kouno (Shizuoka Univ.), Masaru Sakai (Univ. of Yamanashi), Katsumi Kishino (Sophia UNiv.), Kazuhiko Hara (Shizuoka Univ.) ED2015-19 CPM2015-4 SDM2015-21
We fabricated InGaN nanoplates on top of GaN nanocolumns by radio-frequency plasma-assisted molecular beam epitaxy. The ... [more] ED2015-19 CPM2015-4 SDM2015-21
pp.17-19
ED, CPM, SDM 2015-05-28
14:50
Aichi Venture Business Laboratory, Toyohashi University of Technology Semi-polar GaN (10-13) grown on nominal Si (001) substrate with sputtered AlN buffer layer
Hojun Lee, Tadashi Mitsunari, Yoshio Honda, Hiroshi Amano (Nagoya Univ.)
 [more]
ED, CPM, SDM 2015-05-28
15:15
Aichi Venture Business Laboratory, Toyohashi University of Technology Control of N composition of GaAsN alloy grown by surface nitridation
Noriyuki Urakami, Keisuke Yamane, Hiroto Sekiguchi, Hiroshi Okada, Akihiro Wakahara (Toyohashi Tech.) ED2015-20 CPM2015-5 SDM2015-22
We researched growth conditions effect for N composition and luminescence property on dilute nitride GaAsN alloy grown b... [more] ED2015-20 CPM2015-5 SDM2015-22
pp.21-26
ED, CPM, SDM 2015-05-28
15:40
Aichi Venture Business Laboratory, Toyohashi University of Technology Growth and preliminary MOSFETs of corundum-structured oxide semiconductors
Yoshito Ito, Kentaro Kaneko, Shizuo Fujita (Kyoto Univ.) ED2015-21 CPM2015-6 SDM2015-23
Growth of corundum-structured oxide semiconductors has been demonstrated using appropriate buffer layers on sapphire by ... [more] ED2015-21 CPM2015-6 SDM2015-23
pp.27-30
ED, CPM, SDM 2015-05-28
16:05
Aichi Venture Business Laboratory, Toyohashi University of Technology Schottky barrier diodes of high mobility β-Ga2O3 (-201) single crystals grown by edge-defined-fed growth method
Yuta Koga, Kazuya Harada, Kenji Hanada, Toshiyuki Oishi, Makoto Kasu (Saga Univ.) ED2015-22 CPM2015-7 SDM2015-24
High Hall electron mobility and its high performances of Schottky barrier diodes on edge-defined film-fed grown (2 &#773... [more] ED2015-22 CPM2015-7 SDM2015-24
pp.31-34
ED, CPM, SDM 2015-05-28
16:40
Aichi Venture Business Laboratory, Toyohashi University of Technology Analysis of forward characteristics of GaN Schottky barrier diodes by using floating electrodes
Syuzo Yamaguchi, Toshiyuki Oishi (Saga Univ.), Yutaro Yamaguchi, Koji Yamanaka (Mitsubishi Electric Corp.) ED2015-23 CPM2015-8 SDM2015-25
In high power Schottky barrier diodes, it is possible to apply a high voltage to Schottky electrodes. In this paper, we ... [more] ED2015-23 CPM2015-8 SDM2015-25
pp.35-39
ED, CPM, SDM 2015-05-28
17:05
Aichi Venture Business Laboratory, Toyohashi University of Technology Device simulation of NO2-exposed H-terminated diamond FETs with Al2O3 insulator
Toshiyuki Oishi, Ryutaro Higashi, Kazuya Harada, Yuta Koga (Saga Univ.), Kazuyuki Hirama (NTT), Makoto Kasu (Saga Univ.) ED2015-24 CPM2015-9 SDM2015-26
This paper investigated the simulation model for NO2-exposed H-terminated diamond FETs with Al2O3 insulator gate, which ... [more] ED2015-24 CPM2015-9 SDM2015-26
pp.41-44
ED, CPM, SDM 2015-05-28
17:30
Aichi Venture Business Laboratory, Toyohashi University of Technology Possibility of Chirality Control for In-Plane Oriented Single-Walled Carbon Nanotubes by Free Electron Laser Irradiation
Daiki Kawaguchi, Keisuke Yoshida, Miu Kobayashi, Shinnosuke Harumiya, Tomoko Nagata, Hiroshi Yamamoto, Nobuyuki Iwata (Nihon Univ.) ED2015-25 CPM2015-10 SDM2015-27
We report the control of chirality and in-plane oriented of single-walled carbon nanotube (SWNT) during growth. The SWNT... [more] ED2015-25 CPM2015-10 SDM2015-27
pp.45-50
ED, CPM, SDM 2015-05-28
17:55
Aichi Venture Business Laboratory, Toyohashi University of Technology Optimization of Growth Condition in Co/Pt/r-oriented Cr2O3 Multilayer on Sapphire Substrates
Takashi Sumida, Kosuke Hashimoto, Shinjiro Fukui, Tomoko Nagata, Hiroshi Yamamoto, Nobuyuki Iwata (Nihon Univ.) ED2015-26 CPM2015-11 SDM2015-28
We report the crystal structures and magnetic properties of [Pt/Co]3/Pt/r-Cr2O3 multilayers fabricated by DC-RF magnetro... [more] ED2015-26 CPM2015-11 SDM2015-28
pp.51-56
ED, CPM, SDM 2015-05-29
08:40
Aichi Venture Business Laboratory, Toyohashi University of Technology Glass-tube-free ion image sensors based on calculating the solution potential from the sensitivity difference between pixels
Shin Watanabe, Fumihiro Dasai, Tatsuya Iwata, Makoto Ishida, Toshiaki Hattori, Kazuaki Sawada (TUT) ED2015-27 CPM2015-12 SDM2015-29
For electrochemical measurements, a reference electrode is used to fix solution potential. A typical reference electrode... [more] ED2015-27 CPM2015-12 SDM2015-29
pp.57-61
ED, CPM, SDM 2015-05-29
09:05
Aichi Venture Business Laboratory, Toyohashi University of Technology Spectro-electrochemical characterization of GaN/electrolyte interface and its application to the nanostructure formation
Yusuke Kumazaki, Akio Watanabe, Zenji Yatabe, Taketomo Sato (Hokkaido Univ.) ED2015-28 CPM2015-13 SDM2015-30
 [more] ED2015-28 CPM2015-13 SDM2015-30
pp.63-66
ED, CPM, SDM 2015-05-29
09:30
Aichi Venture Business Laboratory, Toyohashi University of Technology Crystal Structure and Oxygen Permeation Properties of Oxygen Permeable SrFeO3-δ
Isao Kagomiya, Shiro Shirakawa, Ken-ichi Kakimoto (NITech) ED2015-29 CPM2015-14 SDM2015-31
We investigated the oxygen permeability and the crystal structure of the SrFeO3-δ(δ= ~0.25)which possesses crystal aniso... [more] ED2015-29 CPM2015-14 SDM2015-31
pp.67-69
ED, CPM, SDM 2015-05-29
09:55
Aichi Venture Business Laboratory, Toyohashi University of Technology Quantitative evaluation of temperature dependence of surface recombination velocities for 4H-SiC
Kimihiro Kohama, Yuto Mori, Masashi Kato, Masaya Ichimura (NIT) ED2015-30 CPM2015-15 SDM2015-32
The surface recombination velocity is one of the limiting factors for the carrier lifetime, which is an important parame... [more] ED2015-30 CPM2015-15 SDM2015-32
pp.71-76
ED, CPM, SDM 2015-05-29
10:30
Aichi Venture Business Laboratory, Toyohashi University of Technology Effects of annealing on properties of electrochemically deposited CuxZnyS thin films
Tong Bayingaerdi, Masaya Ichimura (NITech) ED2015-31 CPM2015-16 SDM2015-33
 [more] ED2015-31 CPM2015-16 SDM2015-33
pp.77-80
ED, CPM, SDM 2015-05-29
10:55
Aichi Venture Business Laboratory, Toyohashi University of Technology Influence of stirring on SnS deposition using chemical bath deposition
Taishi Suzuki, Yasushi Takano, Akihiro Ishida (Shizuoka Univ.) ED2015-32 CPM2015-17 SDM2015-34
Tin sulfide has been deposited on glasses using chemical bath deposition (CBD). SnS glows on glasses in a beaker contain... [more] ED2015-32 CPM2015-17 SDM2015-34
pp.81-84
ED, CPM, SDM 2015-05-29
11:20
Aichi Venture Business Laboratory, Toyohashi University of Technology Fabrication of Cu2O/Fe-O heterojunction solar cells by electrodeposition
Zhang Chaolong (NIT), Junie Jhon M. Vequizo (TTI), Masaya Ichimura (NIT) ED2015-33 CPM2015-18 SDM2015-35
 [more] ED2015-33 CPM2015-18 SDM2015-35
pp.85-90
ED, CPM, SDM 2015-05-29
11:45
Aichi Venture Business Laboratory, Toyohashi University of Technology Sulfur annealing of electrochemically deposited iron sulfide thin films and application to heterojunction cells with ZnO
Takahiro Kajima (Nagoya Inst. of Tech.), Shoichi Kawai (DENSO CORP.), Masaya Ichimura (Nagoya Inst. of Tech.) ED2015-34 CPM2015-19 SDM2015-36
The electrochemical deposition (ECD) is a method to deposit thin films by reducing ions in an aqueous solution. FeS2 (py... [more] ED2015-34 CPM2015-19 SDM2015-36
pp.91-95
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