| IEICE Technical Committee Submission System Conference Schedule |
Online Proceedings [Sign in] Tech. Rep. Archives |
Technical Committee on Electron Devices (ED) (Searched in: 2013)
Search Results: Keywords 'from:2014-02-27 to:2014-02-27'
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ED, SDM | 2014-02-27 13:30 |
Hokkaido | Hokkaido Univ. Centennial Hall | [Invited Talk]
Amoeba-inspired Computing Paradigm and Its Realization Using Nanophotonics and Electron Devices Mashashi Aono (Tokyo Inst. of Tech./JST), Makoto Naruse (NICT), Song-Ju Kim (NIMS), Hiroyoshi Miwa (Kwansei Gakuin Univ.)  ED2013-132 SDM2013-147 |
[more] | ED2013-132 SDM2013-147 pp.1-6 |
| ED, SDM | 2014-02-27 14:15 |
Hokkaido | Hokkaido Univ. Centennial Hall | Fabrication and Characteristics of carbon nanotube TFT Tomo Tanaka, Eiichi Sano (Hokkaido Univ.) ED2013-133 SDM2013-148 |
Single-walled carbon nanotube (CNT) network thin-film transistors (TFTs) are attractive owing to their simple, low-cost ... [more] | ED2013-133 SDM2013-148 pp.7-12 |
| ED, SDM | 2014-02-27 14:40 |
Hokkaido | Hokkaido Univ. Centennial Hall | Fabrication and characterization of n-type carbon nanotube thin film transistors on plastic film Tomohiro Yasunishi, Shigeru Kishimoto, Yutaka Ohno (Nagoya Univ.) ED2013-134 SDM2013-149 |
We realized high mobility n-type carbon nanotube thin-film transistors on a plastic film using the transfer process and ... [more] | ED2013-134 SDM2013-149 pp.13-18 |
| ED, SDM | 2014-02-27 15:05 |
Hokkaido | Hokkaido Univ. Centennial Hall | Fabrication of carbon nanotube thin-film transistors with high-speed flexographic printing technique Kentaro Higuchi (Nagoya Univ.), Yuta Nakajima, Takuya Tomura, Masafumi Takesue (Bando Chemical Industries), Shigeru Kishimoto (Nagoya Univ.), Katsuhiko Hata (Bando Chemical Industries), Yutaka Ohno (Nagoya Univ.) ED2013-135 SDM2013-150 |
We fabricated high-mobility carbon nanotube thin-film transistors (CNT TFTs) by fully non-lithographic and non-vacuum pr... [more] | ED2013-135 SDM2013-150 pp.19-24 |
| ED, SDM | 2014-02-27 15:45 |
Hokkaido | Hokkaido Univ. Centennial Hall | Realizing topological insulating phase in the heterostructure composed of direct transition band gap semiconductors Kyoichi Suzuki, Koji Onomitsu, Yuichi Harada, Koji Muraki (NTT) ED2013-136 SDM2013-151 |
We have realized a topological insulating phase in a heterostructure composed of direct transition band gap semiconducto... [more] | ED2013-136 SDM2013-151 pp.25-30 |
| ED, SDM | 2014-02-27 16:10 |
Hokkaido | Hokkaido Univ. Centennial Hall | Seebeck-coefficient control of ultrathin SOI layer and its novel characterization technique Hiroya Ikeda, Yuhei Suzuki, Kazutoshi Miwa (Shizuoka Univ.), Faiz Salleh (Shizuoka Univ./JSPS) ED2013-137 SDM2013-152 |
The enhancement of the thermoelectric performance has been expected by Si nanostrucutres. The Si Seebeck coefficient is ... [more] | ED2013-137 SDM2013-152 pp.31-35 |
| ED, SDM | 2014-02-27 16:35 |
Hokkaido | Hokkaido Univ. Centennial Hall | Synthesis of various F- doped tin oxide nanostructures on the glass substrate by the atomized spray pyrolysis deposition for DSSC application Gamini Rajapakse (Univ. of Peradeniya), Devinda Liyanage (Shizuoka Univ.), Viraj Jayaweera (SPD Lab. Inc.), Vikum Premalal, Madhu Mohan (Shizuoka Univ.), Navaratne Bandara (Univ. Peradeniya), Masaru Shimomura, Kenji Murakami (Shizuoka Univ.) ED2013-138 SDM2013-153 |
This paper is concerned with the Spray Pyrolytic (SP) deposition of various nanoarchitectures of electronically-conducti... [more] | ED2013-138 SDM2013-153 pp.37-42 |
| ED, SDM | 2014-02-27 17:00 |
Hokkaido | Hokkaido Univ. Centennial Hall | Suppressing the Recombination Rate on DSSC by Forming Blocking Layer Rangga Winantyo, Madhu Mohan (Shizuoka Univ.), Gamini Rajapakse (Univ. of Peradeniya), Kenji Murakami (Shizuoka Univ.) ED2013-139 SDM2013-154 |
[more] | ED2013-139 SDM2013-154 pp.43-46 |
| ED, SDM | 2014-02-27 17:25 |
Hokkaido | Hokkaido Univ. Centennial Hall | Characterization of An Electron Brownian Ratchet Device Based on A GaAs-based Nanowire Having Asymmetric Gates Yushi Abe, Takayuki Tanaka, Seiya Kasai (Hokkaido Univ.) ED2013-140 SDM2013-155 |
We investigate the operation condition of an electron Brownian ratchet device utilizing a GaAs-based nanowire having asy... [more] | ED2013-140 SDM2013-155 pp.47-50 |
| ED, SDM | 2014-02-27 17:50 |
Hokkaido | Hokkaido Univ. Centennial Hall | Heterogeneous Integration of InAs Nanowires on a CMOS Substrate Kenji Michimata, Issei Shimamoto, Takao Waho, Yuta Ogino, Kazuhiko Shimomura (Sophia Univ.) ED2013-141 SDM2013-156 |
[more] | ED2013-141 SDM2013-156 pp.51-54 |
| ED, SDM | 2014-02-28 09:00 |
Hokkaido | Hokkaido Univ. Centennial Hall | Fabrication of GaN/AlN Resonant Tunneling Diodes by MOVPE
-- Analysis of Nitride Quantum Well Structures -- Naruaki Itoh, Hassanet Sodabanlu, Masakazu Sugiyama, Yoshiaki Nakano (Univ. of Tokyo) ED2013-142 SDM2013-157 |
Owing to large conduction band offset of 2.1 eV, which is larger than the values for other compound semiconductor system... [more] | ED2013-142 SDM2013-157 pp.55-59 |
| ED, SDM | 2014-02-28 09:25 |
Hokkaido | Hokkaido Univ. Centennial Hall | Application of resonant tunneling diode oscillators to sensors Koichi Maezawa, Jie Pan, Yuichiro Kakutani, Jun Nakano, Masayuki Mori (Univ. of Toyama) ED2013-143 SDM2013-158 |
A negative differential resistance (NDR) of resonant tunneling diodes (RTDs) is a basis for high frequency oscillators. ... [more] | ED2013-143 SDM2013-158 pp.61-66 |
| ED, SDM | 2014-02-28 09:50 |
Hokkaido | Hokkaido Univ. Centennial Hall | Patterning of carbon nanotube thin films by simple transfer process and its application for touch sensors Norihiro Fukaya (Nagoya Univ.), Dong Young Kim (Waseda Univ.), Shigeru Kishimoto (Nagoya Univ.), Suguru Noda (Waseda Univ.), Yutaka Ohno (Nagoya Univ.) ED2013-144 SDM2013-159 |
We propose a technique for easy micro-patterning of carbon-nanotube films on a plastic substrate. By utilizing this tech... [more] | ED2013-144 SDM2013-159 pp.67-71 |
| ED, SDM | 2014-02-28 10:15 |
Hokkaido | Hokkaido Univ. Centennial Hall | Charging properties of potassium ion SiO2 electret film Gen Hashiguchi, Tatsuhiko Sugiyama, Yasushi Shibata (Shizuoka Univ.) ED2013-145 SDM2013-160 |
We have developed a new fabrication method of electret made of SiO2 film. In this method, KOH solution is bubbled by ca... [more] | ED2013-145 SDM2013-160 pp.73-76 |
| ED, SDM | 2014-02-28 10:50 |
Hokkaido | Hokkaido Univ. Centennial Hall | Tuning of Resistance of Au Nanowires by Feedback-Controlled Electromigration Using Real-Time Operating System (RTOS) Masazumi Ando, Yuma Kanamaru, Takanari Saito, Jun-ichi Shirakashi (Tokyo Univ. of Agr. & Tech.) ED2013-146 SDM2013-161 |
Electromigration method becomes promising for the fabrication of nanogap electrodes. However, the nanogap electrodes fab... [more] | ED2013-146 SDM2013-161 pp.77-82 |
| ED, SDM | 2014-02-28 11:15 |
Hokkaido | Hokkaido Univ. Centennial Hall | Investigation of Feedback-Controlled Electromigration Using FPGA System Yuma Kanamaru, Masazumi Ando, Takanari Saito, Jun-ichi Shirakashi (Tokyo Univ. of Agr. & Tech.) ED2013-147 SDM2013-162 |
Electromigration method for the fabrication of nanogaps is specifically simple as compared with other methods because it... [more] | ED2013-147 SDM2013-162 pp.83-87 |
| ED, SDM | 2014-02-28 11:40 |
Hokkaido | Hokkaido Univ. Centennial Hall | Direct observation of conductive filaments during MoOx/Cu ReRAM switching Yuuki Ohno, Takahiro Hiroi, Masaki Kudo, Kouichi Hamada, Masashi Arita, Yasuo Takahashi (Hokkaido Univ.) ED2013-148 SDM2013-163 |
While a conductive filament formed by movement of the metal ions in the solid electrolyte is considered as the mechanism... [more] | ED2013-148 SDM2013-163 pp.89-94 |
| ED, SDM | 2014-02-28 12:05 |
Hokkaido | Hokkaido Univ. Centennial Hall | Formation Scheme of Nano-Scale Devices Based on Ni Nanogaps Using Field-Emission-Induced Electromigration Ryutaro Suda, Mitsuki Ito, Kohei Morihara, Takahiro Toyonaka, Kazuki Takikawa, Jun-ichi Shirakashi (Tokyo Univ. of Agr. & Tech.) ED2013-149 SDM2013-164 |
We propose a simple and easy fabrication scheme of ferromagnetic single-electron transistors (FMSETs), nanogap based res... [more] | ED2013-149 SDM2013-164 pp.95-100 |
[Return to Top Page]