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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ED | 2022-12-09 13:45 |
Aichi | 12/8 Nagoya University, 12/9 WINC AICHI | [Invited Talk]
Development of microscopic nanomechanical measurement method using length extension quarz resonator
-- Measurement of interatomic bond strength -- Yoshifumi Oshima, Jiaqi Zhang (JAIST), Toyoko Arai (Kanazawa Univ.), Masahiko Tomitori (JAIST)  ED2022-65 |
A "microscopic nanomechanical measurement method" was developed by combining a transmission electron microscope (TEM) sa... [more] | ED2022-65 pp.47-50 |
| ICD | 2016-04-14 13:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Lecture]
Visualization of Filament of ReRAM during Resistive Switching by in-situ Transmission Electron Microscopy Yasuo Takahashi (Hokkaido Univ.), Masaki Kudo (Kyusyu Univ.), Masashi Arita (Hokkaido Univ.) ICD2016-5 |
Resistive random access memories (ReRAMs) have been investigated as a next generation non-volatile memory, where 16-Gbit... [more] | ICD2016-5 pp.21-26 |
| CPM | 2012-10-26 17:05 |
Niigata | Interface between GaP and Si substrates prepared using metalorganic vapor phase epitaxy Tatsuya Takagi, Ryo Miyahara, Yasushi Takano (Shizuoka Univ.) CPM2012-101 |
GaP layers were grown on Si substrates 2° or 4°-misoriented toward (011) using metalorganic vapor phase epitaxy. The sub... [more] | CPM2012-101 pp.45-48 |
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| CPM | 2012-08-08 14:15 |
Yamagata | Influence of Si surface annealing on GaP on Si substrates using metalorganic vapor phase epitaxy Tatsuya Takagi, Ryo Miyahara, Yohsuke Horie, Yasushi Takano (Shizuoka Univ.) CPM2012-36 |
GaP layers were grown on Si substrates using metalorganic vapor phase epitaxy. In order to suppress APD generation, Si(1... [more] | CPM2012-36 pp.17-20 |
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| SDM | 2012-06-21 09:20 |
Aichi | VBL, Nagoya Univ. | Resistive Switching Properties of Directly Bonded SrTiO3 Substrate Ryota Asada, Pham Phu Thanh Son, Kokate Nishad Vasant, Jun Kikkawa, Shotaro Takeuchi, Yoshiaki Nakamura, Akira Sakai (Osaka Univ.) SDM2012-44 |
As one of new non-volatile memory devices, much attention has been paid to the resistive switching memory which has a me... [more] | SDM2012-44 pp.7-12 |
| CPM, SDM, ED | 2011-05-19 16:05 |
Aichi | Nagoya Univ. (VBL) | Antiphase domains in GaP grown on Si substrates using metalorganic vapor phase epitaxy Yasushi Takano, Tatsuya Takagi, Tatsuru Misaki, Ryo Miyahara (Shizuoka Univ.) ED2011-15 CPM2011-22 SDM2011-28 |
GaP layers were grown on 2° and 4° misoriented Si substrates using metalorganic vapor phase epitaxy. The misoriented sub... [more] | ED2011-15 CPM2011-22 SDM2011-28 pp.71-75 |
| SDM, OME | 2008-04-12 09:30 |
Okinawa | Okinawa Seinen Kaikan | [Invited Talk]
Electron Microscopy Study of Low Temperature Crystallization of a-SiGe Thin Film Masaru Itakura, Masanobu Miyao (Kyushu Univ.) SDM2008-16 OME2008-16 |
Microstructures of Si_{0.6}Ge_{0.4} films were investigated by using a transmission electron microscopy (TEM) in order t... [more] | SDM2008-16 OME2008-16 pp.77-82 |
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