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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 21 - 40 of 40 [Previous]  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2012-06-21
10:55
Aichi VBL, Nagoya Univ. Clarification of Interfacial Reaction Mechanism in O2 Annealing or O radical Process for Al2O3/Ge Structure
Shigehisa Shibayama, Kimihiko Kato, Mitsuo Sakashita, Wakana Takeuchi, Noriyuki Taoka, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2012-48
To realize a high performance Ge MOSFET, it is quite important to achieve simultaneously the low interface state density... [more] SDM2012-48
pp.27-32
ED, SDM, CPM 2012-05-17
16:45
Aichi VBL, Toyohashi Univ. of Technol. Preparation and evaluation of Ga2O3 oxygen sensors
Masaaki Isai, Takahiro Yamamoto, Takuma Tori (Shizuoka Univ.) ED2012-25 CPM2012-9 SDM2012-27
Abstract Recently, from a point of environmental problems, oxygen gas sensors attract attention of controlling the exha... [more] ED2012-25 CPM2012-9 SDM2012-27
pp.39-42
EMT, PN, LQE, OPE, MWP, EST, IEE-EMT [detail] 2012-01-26
16:05
Osaka Osaka Univ. Convention Center 780nm range 40 channels VCSEL array for printers
Naoto Jikutani, Kei Hara, Akihiro Itoh, Hiroyoshi Shouji, Morimasa Kaminishi, Hiroshi Motomura, Kazuhiro Harasaka, Satoru Sugawara, Shunichi Sato (RICOH) PN2011-49 OPE2011-165 LQE2011-151 EST2011-99 MWP2011-67
We report 780 nm range 40 channels vertical cavity surface emitting laser (VCSEL) arrays which were developed for laser ... [more] PN2011-49 OPE2011-165 LQE2011-151 EST2011-99 MWP2011-67
pp.103-108
CPM 2011-08-11
09:50
Aomori   Uneven thermal decomposition of silicon oxide layer
Yoshiharu Enta, Kano Ogawa, Takayuki Nagai (Hirosaki Univ.) CPM2011-68
We have investigated the thermal decomposition of 20nm-thickness silicon oxide on Si(100) at a temperature of 1100º... [more] CPM2011-68
pp.61-64
CPM 2011-08-11
11:20
Aomori   Crystal Thin Film Growth Technique for Reducing the Effects of the Base Substrate
Satoru Noge, Takeshi Umehara (Numazu NCT), Takehiko Uno (Kanagawa Inst. of Tech.) CPM2011-71
A growth technique for single crystal film on silica substrate is strongly desired, not only for Ce:YIG but also for man... [more] CPM2011-71
pp.73-78
CPM, SDM, ED 2011-05-20
13:25
Aichi Nagoya Univ. (VBL) Preparation and evaluation of Ga2O3 ovygen sensors
Takahiro Yamamoto, Shinya Kayano, Hiroki Ikeda, Yoshifumi Suzuki, Masaaki Isai (Shizuoka Univ.) ED2011-27 CPM2011-34 SDM2011-40
Recently, from a point of environmental problems, oxygen gas sensors attract attention of controlling the exhaust gas. T... [more] ED2011-27 CPM2011-34 SDM2011-40
pp.135-138
EMD 2010-11-11
10:30
Overseas Xi'an Jiaotong University The Study of Dynamic Welding of Electrical Contacts in Relay Applications
Zhuan-ke Chen, Gerald J. Witter (Chugai USA) EMD2010-74
As the demand for using smaller relays to switch higher load power application increases, dynamic welding of contacts ha... [more] EMD2010-74
pp.31-36
SDM 2010-06-22
13:45
Tokyo An401・402 Inst. Indus. Sci., The Univ. of Tokyo High Temperature Rapid Thermal Annealing of Rare-Earth Oxides Dielectrics for Highly Scaled Gate Stack of EOT=0.5 nm
Daisuke Kitayama, Tomotsune Koyanagi, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, Takeo Hattori, Hiroshi Iwai (Tokyo Inst. of Tech.) SDM2010-41
A direct contact of high-k/Si substrate (without SiO<sub>2</sub> interfacial layer structure) is required for achieving ... [more] SDM2010-41
pp.43-48
SDM, CPM, ED 2010-05-14
10:50
Shizuoka Shizuoka University (Hamamatsu Campus) Preparation and evaluation of Ga2O3 oxygen sensors
Shinya Kayano, Naoya Yamaguchi, Masaaki Isai (Shizuoka Univ.) ED2010-27 CPM2010-17 SDM2010-27
Recentry, from a point of environmental problems, oxygen gas sensors attract attention of controlling the exhaust gas. ... [more] ED2010-27 CPM2010-17 SDM2010-27
pp.57-60
SDM 2009-12-04
15:50
Nara NAIST Formation of High Quality SiO2 and SiO2/Si Interface using Thermal Plasma Jet Induced Millisecond Annealing and Post-Metallization Annealing
Yasuo Hiroshige, Seiichiro Higashi, Yusuke Miyazaki, Kazuya Matsumoto, Seiichi Miyazaki (Hiroshima Univ.) SDM2009-166
Thermal plasma jet (TPJ) induced millisecond annealing has been performed to SiO2 films deposited at 300C by remote plas... [more] SDM2009-166
pp.79-82
ED 2009-07-31
13:20
Osaka Osaka Univ. Icho-Kaikan Micromachined Methane Sensor Based on Palladium Catalytic Thin Layer/Tin Oxide Thick Film -- Improvement in Thermal Shock Resistance by Examining its Design --
Tadashi Takada, Naganori Dougami, Yoshinori Nakataya (New Cosmos Electric Co.,Ltd.) ED2009-113
Thermal shock resistance of a micromachined gas sensor that has a suspended type structure and a sintered SnO2 thick fil... [more] ED2009-113
pp.57-61
SDM 2009-06-19
10:00
Tokyo An401・402 Inst. Indus. Sci., The Univ. of Tokyo Atomistic Modeling of GeO2/Ge Interface Structure by Molecular Dynamics -- Comparison with SiO2/Si Interface --
Takanobu Watanabe, Tomoya Onda, Ryo Tosaka, Hideaki Yamamoto (Waseda Univ.) SDM2009-27
We have performed atomistic modeling of GeO2/Ge interface structure by using newly developed interatomic force-field for... [more] SDM2009-27
pp.3-8
ED, CPM, SDM 2009-05-14
14:45
Aichi Satellite Office, Toyohashi Univ. of Technology Property of Ga2O3 films and evaluation of oxygen sensors properties
Shinya Kayano, Takashi Horiuchi, Masaaki Isai (Shizuoka Univ.) ED2009-21 CPM2009-11 SDM2009-11
Recentry, from a point of environmental problems, oxygen gas sensors attract attention of controlling the exhaust gas. ... [more] ED2009-21 CPM2009-11 SDM2009-11
pp.17-20
CPM, ED, SDM 2008-05-15
14:50
Aichi Nagoya Institute of Technology Preparation of β-Ga2O3 films by RF magnetron sputtering method
Takashi Horiuchi, Masaaki Isai (Shizuoka Univ.) ED2008-5 CPM2008-13 SDM2008-25
Interest for environmental problems has been growing these days. Gallium oxide have been focused as an oxygen (O2) gas s... [more] ED2008-5 CPM2008-13 SDM2008-25
pp.19-22
US 2007-11-29
14:50
Shizuoka Shizuoka Univ. Piezoelectric properties of potassium niobate ceramics synthesized with hydrothermal powders
Norihito Takiguchi, Mutsuo Ishikawa, Hiroshi Hosaka, Takeshi Morita (Univ. Tokyo) US2007-78
Potassium niobate (KN) is one of the promising lead-free piezoelectric materials as an environmental friendly material. ... [more] US2007-78
pp.19-24
ED, SDM 2007-06-25
16:45
Overseas Commodore Hotel Gyeongju Chosun, Gyeongju, Korea Fabrication of temperature sensor using thermopile based on Silicon on Insulator(SOI) structure
Wang-Hoon Lee (Toyohashi Univ. of Tech.), Young-Tae Lee (An-dong National Univ.), Hidekuni Takao, Kazuaki Sawada, Makoto Ishida (Toyohashi Univ. of Tech.)
This paper presents a temperature measurable contact and non-contact type thermopile based on SOI structure. The sensor ... [more]
SDM 2007-03-15
13:30
Tokyo Kikai-Shinko-Kaikan Bldg. Reset switching mechanism of ReRAM using thermal reaction model
Yoshihiro Sato, Kentaro Kinoshita, Hideyuki Noshiro, Masaki Aoki, Yoshihiro Sugiyama (FUJITSU LAB.)
We investigated the resistive memory (ReRAM) cells with binary metal oxide (BMO) junctions by applying a short voltage p... [more] SDM2006-255
pp.7-10
ED 2006-08-04
10:15
Osaka Osaka Univ. Convention Center Growth and emission characteristics of iron-oxide whiskers.
Morihiro Okada (Shizuoka Univ./Nippon Steel Co.), Yoichiro Neo (Shizuoka Univ.), Takahiro Matsumoto (Stanley), Kenji Kubomura (KIT), Hidenori Mimura (Shizuoka Univ.)
Iron-oxide whiskers with diameters between 30 and 100 nm and aspect ratios of up to 1000 were obtained by the thermal ox... [more] ED2006-130
pp.63-65
SANE 2006-06-21
16:25
Ibaraki JAXA(Tsukuba) Greenhouse Gases Monitoring from TANSO on GOSAT
Hiroshi Suto, Akihiko Kuze, Yutaka Kaneko, Takashi Hamazaki (JAXA), Hiroyuki Oguma, Yukio Yoshida, Isamu Morino, Tatsuya Yokota (NIES), Gen Inoue (Nagoya U.) SANE2006-73
The Greenhouse gases Observing SATellite (GOSAT) is a satellite to monitor the colum concentration of carbon dioxide (CO... [more] SANE2006-73
pp.43-46
LQE, ED, CPM 2005-10-13
16:40
Shiga Ritsumeikan Univ. Electrical Properties of Ni/i-AlGaN/GaN Gate Structures and Influence of Termal Annealing
Takayuki Sawada, Satoshi Yoneta, Kensuke Takahashi (Hokkaido Inst. Tech.), Seong-Woo Kim, Toshimasa Suzuki (Nippon Inst. Tech.)
Electrical properties of Ni/i-AlGaN/GaN Schottky gate structures were investigated. Existence of surface native oxide d... [more] ED2005-135 CPM2005-122 LQE2005-62
pp.79-84
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