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Committee Date Time Place Paper Title / Authors Abstract Paper #
CPM 2015-08-11
09:40		 Aomori   Low temperature deposition of HfNx film by radical reaction
Masaru Sato, Mayumi B. Takeyama, Atsushi Noya (Kitami inst. of Technol.) CPM2015-40		 We have demonstrated the preparation of a low-temperature deposited HfNx film as a diffusion barrier applicable to the C... [more] CPM2015-40
pp.47-50
SDM 2011-10-20
16:10		 Miyagi Tohoku Univ. (Niche) [Special Talk] Science Based New Silicon Technologies
Tadahiro Ohmi (Tohoku Univ.) SDM2011-102		 Current Silicon Technologies can fabricate LSI only on (100) Silicon surface using two dimensional planar structure MOS ... [more] SDM2011-102
pp.27-36
SDM 2009-06-19
13:20		 Tokyo An401・402 Inst. Indus. Sci., The Univ. of Tokyo Control of Interfacial Structure of High-k/Ge Gate Stack Using Radical Nitridation
Kimihiko Kato, Hiroki Kondo, Mitsuo Sakashita, Shigeaki Zaima (Nagoya Univ.) SDM2009-33		 To realize high mobility Ge channel metal-oxide-semiconductor field-effect-transistor (MOSFET), it is necessary to estab... [more] SDM2009-33
pp.39-44
SDM 2007-06-08
11:20		 Hiroshima Hiroshima Univ. ( Faculty Club) Effects of Nitrogen Incorporaton into La2O3 using Nitrogen Radicals
Soshi Sato, Kiichi Tachi, Jaeyeol Song, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Nobuyuki Sugii, Takeo Hattori, Hiroshi Iwai (Tokyo Tech.) SDM2007-44		 This work reports the influence of nitridation on structural and electrical properties of La2O3 gate dielectric films. T... [more] SDM2007-44
pp.71-74
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