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Committee Date Time Place Paper Title / Authors Abstract Paper #
ED 2016-10-26
09:55		 Mie   Electron Emission from W(100) Surface modified by Group 3 Elements -- Work Function Reduction by Sc Oxide, Pr Oxide and Nd Oxide --
Takashi Kawakubo (NIT Kagawa), Hideaki Nakane (Muroran Inst. of Tech.) ED2016-52		 Tungsten which is one of high melting metal is employed as the material of the electron source. The work function of tun... [more] ED2016-52
pp.41-46
SDM 2012-06-21
11:35		 Aichi VBL, Nagoya Univ. Effect of Reducing Character of Gate Metals on Pr Valence State in Pr Oxide Film on Ge Substrate
Kimihiko Kato, Mitsuo Sakashita, Wakana Takeuchi, Noriyuki Taoka, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2012-50		 We have investigated the impact of the gate metal on the chemical bonding state in the metal/Pr-oxide/Ge gate stack stru... [more] SDM2012-50
pp.37-42
SDM 2011-07-04
13:40		 Aichi VBL, Nagoya Univ. Control of Interfacial Reactions in Pr Oxide/Ge Structures Based on Valence State of Pr
Kimihiko Kato, Mitsuo Sakashita, Wakana Takeuchi, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2011-60		 We have investigated the electrical properties and chemical bonding state of praseodymium (Pr) oxide/Ge and Pr oxide/Pr ... [more] SDM2011-60
pp.57-62
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