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Committee Date Time Place Paper Title / Authors Abstract Paper #
CPM 2020-10-29
14:50		 Online Online Preparations and some properties of GaN-nanopillar-crystal-based pn junctions on multi-crystalline Si substrates
Shingo Taniguchi, Sora Saito, Houyao Xue, Tsubasa Saito, Yuichi Sato (Akita Univ) CPM2020-16		 We tried to form pn junction diodes using GaN-based nanopillar crystals using multicrystalline Si, which is widely used ... [more] CPM2020-16
pp.19-22
CPM, ED, LQE 2007-10-12
13:50		 Fukui Fukui Univ. Electrical characterization of homoepitaxially-grown pn GaN diodes
Yutaka Tokuda, Youichi Matsuoka, Takeshi Seo (Aichi Inst. Tech.), Hiroyuki Ueda, Osamu Ishiguro, Narumasa Soejima, Tetsu Kachi (Toyota Central R&D Labs. Inc.) ED2007-173 CPM2007-99 LQE2007-74		 We report the electrical characterization of homoepitaxially-grown pn GaN by MOCVD on free-standing GaN substrates. The... [more] ED2007-173 CPM2007-99 LQE2007-74
pp.85-88
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