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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 21 - 40 of 43 [Previous]  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2012-12-07
14:00
Kyoto Kyoto Univ. (Katsura) Depth analysis of ultra-shallow junctions by photoluminescence with the aid of nano-scale wet etching
Gota Murai, Masashi Okutani, Syuji Tagawa, Masahiro Yoshimoto (Kyoto Inst. Tech.), Woo Sik Yoo (WaferMasters) SDM2012-127
The photoluminescence (PL) intensity at room temperature increased with decreasing defect density measured by DLTS(deep ... [more] SDM2012-127
pp.71-76
CPM 2012-10-27
12:15
Niigata   Photoluminescence characteristics of high-density Ge nanodots on Si substrate by gas source MBE
Yutaka Anezaki, Kai Sato, Takahiro Kato, Ariyuki Kato, Hideyuki Toyota (Nagaoka Univ. Techno.), Maki Suemitsu (Tohoku Univ.), Hideki Nakazawa (Hirosaki Univ.), Yuzuru Narita (Yamagata Univ.), Kanji Yasui (Nagaoka Univ. Techno.) CPM2012-111
Ge nanodots were formed on Si(001)-2˚off substrates after the formation of Si c(4×4) structure by gas-source molecu... [more] CPM2012-111
pp.97-100
EMD, CPM, OME 2012-06-22
15:35
Tokyo Kikai-Shinko-Kaikan Bldg. Growth and Shape Control of ZnO Nanorods by Chemical Bath Deposition Using ZnCl2 as a Source Material
Tomoaki Terasako, Toshihiro Murakami (Grad. Scool Sci. & Eng., Ehime Univ.), Masakazu Yagi (Kagawa Nat. Coll. Technol.), Sho Shirakata (Grad. Scool Sci. & Eng., Ehime Univ.) EMD2012-12 CPM2012-29 OME2012-36
Zinc oxide (ZnO) NRs were successfully grown by the chemical bath deposition (CBD) using ZnCl$_2$ aqueous solution. The ... [more] EMD2012-12 CPM2012-29 OME2012-36
pp.23-28
EID, ITE-IDY, IEE-EDD 2012-01-27
14:38
Akita Akita University Measurement of two-wavelength excited photoluminescence in Ba3Si6O12N2:Eu2+ phodphor
Ryo Ishioka, Kouhei Igarashi, Takeshi Fukuda (Saitama Univ.), Yasuo Shimomura (STRC, Mitsubishi Chemical), Norihiko Kamata (Saitama Univ.) EID2011-19
One candidate of efficient and reliable phosphor materials, Ba3Si6O12N2:Eu2+, is suitable for the combination with UV- t... [more] EID2011-19
pp.21-24
SDM 2011-07-04
11:20
Aichi VBL, Nagoya Univ. Photoluminescence and interface properties of Si nanolayers and nanowires
Yoko Sakurai, Kenji Ohmori, Keisaku Yamada (Univ. of Tsukuba), Kuniyuki Kakushima, Hiroshi Iwai (Tokyo Insti. Tech.), Kenji Shiraishi, Shintaro Nomura (Univ. of Tsukuba) SDM2011-56
Photoluminescence (PL) and interface properties of Si nanolayers and nanowires have been investigated. We have observed ... [more] SDM2011-56
pp.35-39
OME 2011-03-08
11:00
Osaka Osaka Univ. (Convention center) Photodegradation dynamics of polyfluorene thin films studied by means of photoluminescence spectroscopy -- Influence of residual oxygen --
Masanori Nakagawa, Takashi Kobayashi, Takashi Nagase, Hiroyoshi Naito (Osaka Pref. Univ.) OME2010-80
Polyfluorene (PFO) has been extensively studied as an efficient blue emitter for organic light-emitting diodes (OLED). H... [more] OME2010-80
pp.17-20
EID, ITE-IDY, IEE-EDD, IEIJ-SSL 2011-01-28
13:45
Kochi Kochi University of Technology Characterization of Ba3Si6O12N2:Eu2+ Phosphor by Photo- and Thermoluminescence
Ryo Ishioka, Kouhei Igarashi, Takeshi Fukuda (Saitama Univ.), Naoto Kijima (Mitsubishi Chemical), Norihiko Kamata (Saitama Univ.) EID2010-28
Optical characterization of Ba3Si6O12N2:Eu2+ (BSON) phosphor was carried out based on an internal quantum efficiency, ph... [more] EID2010-28
pp.25-28
SDM 2010-12-17
15:45
Kyoto Kyoto Univ. (Katsura) Photoluminescence and deep level transient spectroscopy study on recrystallization of ultra-shallow junction
Masashi Okutani, Shuhei Takashima, Masahiro Yoshimoto (KIT), Woo Sik Yoo (WaferMasters, Inc.) SDM2010-198
Recrystallization of low-energy implanted ultra-shallow junctions (USJs) are characterized by photoluminescence (PL) and... [more] SDM2010-198
pp.73-78
MI 2010-11-15
14:40
Kyoto Shimadzu Corp. Preparation of glass beads incorporating quantum dots for use as fluorescent reagent and neuronal cell imaging
Masanori Ando, Chunliang Li, Ping Yang, Norio Murase, Chie Hosokawa, Takahisa Taguchi (AIST) MI2010-76
Quantum dots (QDs) show bright photoluminescence whose emission wavelength can be controlled by their particle size and ... [more] MI2010-76
pp.57-62
LQE, OPE, OCS 2010-10-29
10:10
Fukuoka Mojiko Retro Town, Minato house Anisotropic thermal properties of chalcopyrite semiconductor AgGaSe2
Akira Nagaoka, Kenji Yoshino (Univ. of Miyazaki) OCS2010-74 OPE2010-110 LQE2010-83
I–III–VI2 chalcopyrite semiconductors were already used for solar cell, LED and nonlinear optical devices. E... [more] OCS2010-74 OPE2010-110 LQE2010-83
pp.113-116
LQE, OPE, OCS 2010-10-29
10:35
Fukuoka Mojiko Retro Town, Minato house Properties analysis of chalcopyrite semiconductor AgGaSe2 by optical measurement
Akira Nagaoka, Kenji Yoshino (Univ of Miyazaki) OCS2010-75 OPE2010-111 LQE2010-84
Ternary chalcopyrite semiconductors have instructive properties that Si and Ge does not have, because of multi element-s... [more] OCS2010-75 OPE2010-111 LQE2010-84
pp.117-120
CPM 2010-10-29
10:25
Nagano   Optimization of GaN film growth condition using pulse-mode hot-mesh CVD
Kazuki Nagata, Souichi Satomoto (Nagaoka Univ. Technol.), Hironori Katagiri, Kazuo Jimbo (Nagaoka Techni. College), Maki Suemitsu, Tetsuo Endoh, Takashi Ito (Tohoku Univ. Technol.), Hideki Nakazawa (Hirosaki Univ.), Yuzuru Narita (Yamagata Univ.), Kanji Yasui (Nagaoka Univ. Technol.) CPM2010-102
Hot-mesh CVD with pulse-mode gas supply has been investigated to improve the crystallinity and optical properties of gal... [more] CPM2010-102
pp.55-58
ITE-IDY, EID, IEIJ-SSL, IEE-EDD 2010-01-28
14:20
Fukuoka Kyusyu Univ. (Chikushi Campus) Characterization of Nonradiative Recombination Centers in InGaN Quantum Wells by Two-Wavelength Excited Photoluminescence
Tomohiko Yamaguchi, Kouhei Igarashi, Takeshi Fukuda, Zentaro Honda, Norihiko Kamata (Saitama Univ.)
We investigated below-gap levels in MOCVD-grown Si-doped In0.16Ga0.84N/In0.02Ga0.98N Quantum well (QW) structures by an ... [more] EID2009-55
pp.33-36
OME 2009-10-23
11:15
Osaka Chuo-Denki-Club, ROOM 213 Photodegradation dynamics of polyfluorene thin films studied by means of photoluminescense spectroscopy
Masanori Nakagawa, Takashi Kobayashi, Takashi Nagase, Hiroyoshi Naito (Osaka Pref. Univ.) OME2009-43
Polyfluorene (PFO) has been extensively studied as an efficient blue emitter for organic-light emitting diodes. However,... [more] OME2009-43
pp.19-22
CPM 2009-08-11
12:05
Aomori Hirosaki Univ. Growth and characterization of telecom-wavelength quantum dots using Bi as a surfactant
Hiroshi Okamoto (Hirosaki Univ.), Takehiko Tawara, Hideki Gotoh, Hidehiko Kamada, Tetsuomi Sogawa (NTT) CPM2009-46
The effectiveness of adding TMBi during telecom-wavelength-quantum-dot growth on improving its optical quality and exten... [more] CPM2009-46
pp.67-72
OME 2008-09-30
14:20
Hyogo   Photoexcitation dynamics in fluorene-fluorenone copolymers thin films
Emi Nakamoto, Takashi Kobayashi, Takashi Nagase, Hiroyoshi Naito (Osaka Pref. Univ.) OME2008-45
Photoexcitation dynamics has been investigated in poly[(9,9-dioctylfluorene)-co-(9,9-di(methyl)butylfluorene)] (F8F5) an... [more] OME2008-45
pp.13-18
CPM 2007-11-17
10:50
Niigata Nagaoka University of Technology Optical Properties of Cu2ZnSnS4 Bulk Single Crystals and Thin Films Prepared by Sol-Gel and Sulfurization Method
Yusuke Miyamoto, Kunihiko Tanaka, Masatoshi Oonuki, Noriko Moritake, Hisao Uchiki (Nagaoka Univ.) CPM2007-119
Photoluminescence from Cu2ZnSnS4 (CZTS) thin films and bulk single crystals was studied as a function of excitation powe... [more] CPM2007-119
pp.73-77
CPM 2007-11-17
13:40
Niigata Nagaoka University of Technology Optical properties of Sn-doped CaAl2S4
Hitoshi Ohta, Kunihiko Tanaka, Hisao Uchiki (Nagaoka Univ. Tech.) CPM2007-123
CaAl2S4 has a wide band gap of 4.8eV and promised as an optical host material. Rare earth doped CaAl2S4 was reported in ... [more] CPM2007-123
pp.93-96
CPM 2007-08-09
15:20
Yamagata Yamagata Univ. Optical fabrication process of azo dye molecular thin films due to photoisomerization using polarized optical near-field
Daisuke Katagiri, Takuma Onezawa, Yasuo Ohdaira, Kazunari Shinbo, Keizo Kato, Futao Kaneko (Niigata Univ.) CPM2007-40
An optical fabrication of azo dye molecular films has been investigated using a local polarization in optical near-field... [more] CPM2007-40
pp.21-25
ED, CPM, LQE 2006-10-06
11:00
Kyoto   Photoluminescence from inelastic scattering processes of excitons under intense-excitation conditions in a GaN thin film grown by Metal-organic vapor phase epitaxy
Masaaki Nakayama, Hiroyasu Tanaka (Osaka City Univ.), Masanobu Ando, Toshiya Uemura (Toyoda Gosei)
We have investigated photoluminescence (PL) properties of a high quality GaN thin film grown by metal-organic vapor phas... [more] ED2006-164 CPM2006-101 LQE2006-68
pp.69-73
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