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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| CPM, ED, LQE | 2022-11-24 13:05 |
Aichi | Winc Aichi (Aichi Industry & Labor Center) (Primary: On-site, Secondary: Online) |
Al-doped ZnO thin films deposited by sol-gel method Koji Abe, Tasuku Kubota (NITech)  ED2022-30 CPM2022-55 LQE2022-63 |
Sol-gel process is used to deposit oxide semiconductor thin films such as zinc oxide (ZnO). However, resistivity of ZnO ... [more] | ED2022-30 CPM2022-55 LQE2022-63 pp.33-36 |
| MRIS, CPM, ITE-MMS [detail] | 2022-10-28 10:05 |
Nagano | Shinshu Univ. (Primary: On-site, Secondary: Online) |
Preparation and Evaluation of Molybdenum Oxide for Memristors by Anodic Oxidation Method Chie Nagaoka, Myo Than Htay, Yoshio Hashimoto (Shinshu Univ.) MRIS2022-14 CPM2022-45 |
Molybdenum oxide, which is a potent resistive switching medium of memristors, is prepared by anodic oxidation technique ... [more] | MRIS2022-14 CPM2022-45 pp.33-36 |
| ED, IEE-BMS, IEE-MSS | 2022-08-18 15:45 |
Tokyo | Kikai-Shinko-Kaikan Bldg. B3-2 (Primary: On-site, Secondary: Online) |
Mechanism elucidation of resistance relaxation phenomena in Pt/Nb: SrTiO3 junctions
-- Toward the application of AI devices -- Hayato Nakamura, Hiromasa Aoki, Hiroyuki Kai, Kentaro Kinoshita (Tokyo Univ. of Sci.) ED2022-22 |
(To be available after the conference date) [more] | ED2022-22 pp.21-24 |
| OME | 2022-03-26 15:40 |
Tokyo | Seikei Univ, (Primary: On-site, Secondary: Online) |
Li-air Battery Performance Stabilized by Synergy Effect of Mediator-Coated Air Electrode and LiNO3-based Electrolyte Solution Kazuki Sugawara, Itsuki Moro, Mitsuki Sano (Seikei Univ.), Hiromi Otsuka, Akihiro Nomura (NIMS), Tatsuo Horiba, Morihiro Saito (Seikei Univ.) OME2021-71 |
10-methylonenothiazine (MPT) was introduced as a redox mediator for Li-air cells to suppress charge overvoltage of the a... [more] | OME2021-71 pp.23-26 |
| CPM | 2022-03-01 13:30 |
Online | Online | Water vapor gas diffusion barrier by using room temperature ALD Kazuki Yoshida, Kentaro Saito, Masanori Miura, Kensaku Kanomata, Fumihiko Hirose (Yamagata Univ.) CPM2021-73 |
In this paper, we will report water vapor gas barrier films prepared by room temperature atomic layer deposition(RT-ALD)... [more] | CPM2021-73 pp.7-10 |
| SDM | 2022-01-31 15:30 |
Online | Online | [Invited Talk]
Novel Analog in-Memory Computing with < 1nA Current/Cell and 143.9 TOPS/W Enabled by Monolithic Normally-off Zn-rich CAAC-IGZO FET-on-Si CMOS Technology Yoshiyuki Kurokawa, Haruyuki Baba, Satoru Ohshita, Toshiki Hamada, Yoshinori Ando, Ryota Hodo, Toshikazu Ono, Takashi Hirose, Hitoshi Kunitake, Tsutomu Murakawa (Semiconductor Energy Lab.), Toru Nakura (Fukuoka Univ.), Masaharu Kobayashi (Tokyo Univ.), Hiroshi Yoshida, Min-Cheng Chen (PSMC), Ming-Han Liao (National Taiwan Univ.), Shou-Zen Chang (PSMC), Shunpei Yamazaki (Semiconductor Energy Lab.) SDM2021-72 |
We have successfully demonstrated high-efficiency analog in-memory computing (AiMC) chips, which are monolithically fabr... [more] | SDM2021-72 pp.16-19 |
| ED | 2021-12-09 14:45 |
Online | Online | Oxidation resistant coating of graphene-oxide-semiconductor electron emission device for low earth orbit applications Naoyuki Matsumoto (YNU/AIST), Yoshinori Takao (YNU), Masayoshi Nagao, Katsuhisa Murakami (AIST) ED2021-45 |
A graphene-oxide-semiconductor (GOS) planar-type electron source was protected with a hexagonal boron nitride (h-BN) fil... [more] | ED2021-45 pp.38-42 |
| CPM | 2021-10-27 15:30 |
Online | Online | Evaluation of memristors based on encapsulated ZnO Tomoki Kinoshita, Myo Than Htay, Yoshio Hashimoto (Shinshu Univ) CPM2021-32 |
In order to improve the reproducibility of memristors, a novel device structure composed of encapsulated ZnO in porous a... [more] | CPM2021-32 pp.46-50 |
| SDM | 2021-10-21 10:45 |
Online | Online | [Invited Talk]
Influence of Fluorine on Reliabilities of SiO2 and SixNy Films Yuichiro Mitani (Tokyo City Univ.) SDM2021-44 |
In this paper, the influence of Fluorine incorporation into SiO2 and Si nitride (SixNy) films which are widely used in t... [more] | SDM2021-44 pp.1-4 |
| SDM | 2021-10-21 13:25 |
Online | Online | A study on the effect of inter layers on ferroelectric nondoped HfO2 formation Masakazu Tanuma, Joong-Won Shin, Shun-ichiro Ohmi (Tokyo Tech.) SDM2021-47 |
Ferroelectric HfO_2 thin films are able to be formed on Si substrate, which is difficult for conventional materials due ... [more] | SDM2021-47 pp.12-15 |
| ED, IEE-BMS, IEE-MSS | 2021-08-06 15:25 |
Online | Online | Design of sensor resistance-voltage converters for gas discrimination based on feature patterns extracted by metal-oxide memristors Takehiro Hirota, Takefumi Yoshikawa, Tatsuya Iwata (TPU) ED2021-13 |
In this study, we attempted to obtain the feature pattern of gas sensor transient characteristics using metal-oxide memr... [more] | ED2021-13 pp.9-12 |
| NC, MBE (Joint) |
2021-03-03 14:30 |
Online | Online | A marking method for tungsten microelectrodes using bipolar current Tatsuya Oikawa, Kento Nomura, Toshimitsu Hara, Takeshi Kawano, Rika Numano, Kowa Koida (TUT) MBE2020-41 |
In the electrophysiological experiments in vivo, it is necessary to specify the insertion position of the microelectrode... [more] | MBE2020-41 pp.15-18 |
| OME, IEE-DEI | 2021-03-01 14:35 |
Online | Online | Fabrication of inverted perovskite solar cells with self-assembled hole buffer layers Takao Ueda, Koki Sato, Eiji Itoh (Shinshu Univ.), Ono Hironobu, Goda Shunn (Nipponshokubai) OME2020-21 |
In this study, we have fabricated inverted perovskite solar cells (IPSCs) consisting of ITO/ultra-thin hole buffer layer... [more] | OME2020-21 pp.8-13 |
| MW, ED | 2021-01-29 13:50 |
Online | Online | High-Frequency Characteristics and Delay Time Analysis of β-Ga2O3 MOSFETs Takafumi Kamimura, Yohisaki Nakata, Masataka Higashiwaki (NICT) ED2020-33 MW2020-86 |
Superior RF small-signal characteristics of a current-gain cutoff frequency (fT) of 9 GHz and a maximum oscillation freq... [more] | ED2020-33 MW2020-86 pp.30-33 |
| OME | 2020-12-25 13:00 |
Okinawa | Okinawaken Seinen Kaikan (Primary: On-site, Secondary: Online) |
Fabrication of resistive gas sensor using reduced graphene oxide (rGO) thin films based different reduction methods and their gas sensing property. Kosuke Takano, Eiji Itoh (Shinsyu Univ.), Hironobu Ono, Shun Goda (Nippon Shokubai) OME2020-8 |
In this study, we have investigated the sheet resistance Rs and the chemi-resistive gas sensing properties of the ultra-... [more] | OME2020-8 pp.1-6 |
| OME | 2020-12-25 16:50 |
Okinawa | Okinawaken Seinen Kaikan (Primary: On-site, Secondary: Online) |
Development of Tandem Organic Solar Cells Using MgO as a Cathode Buffer Material Formed by a Reaction of MoO3 with Mg Hiroshi Kageyama (Univ. Ryukyus) OME2020-14 |
Effect of magnesium oxide (MgO) cathode buffer layer, which was fabricated by a reaction of molybdenum oxide with therma... [more] | OME2020-14 pp.29-32 |
| EID, SDM, ITE-IDY [detail] | 2020-12-02 10:30 |
Online | Online | Characterization of amorphous Ga-Sn-O thin film thermoelectric conversion element Yuhei Yamamoto, Tatuya Aramaki, Ryo Ito, Mutumi Kimura (Ryukoku Univ.) EID2020-3 SDM2020-37 |
Most of the exhaust heat generated from factories, automobiles, PCs, etc. is unused. Thermoelectric conversion device ca... [more] | EID2020-3 SDM2020-37 pp.9-12 |
| EID, SDM, ITE-IDY [detail] | 2020-12-02 11:25 |
Online | Online | Stacked cross-point memory of synaptic elements using IGZO thin film Etsuko Iwagi (RU), Takumi Tsuno (NAIST), Mutsumi Kimura (RU) EID2020-4 SDM2020-38 |
We conducted research and development of a large hardware neural network by using oxide semiconductors of In-Ga-Zn-O (IG... [more] | EID2020-4 SDM2020-38 pp.13-16 |
| EID, SDM, ITE-IDY [detail] | 2020-12-02 14:30 |
Online | Online | [Special Invited Talk]
Defects control in oxide semiconductors at low-temperature and its application to flexible devices Yusaku Magari, Mamoru Furuta (Kochi Univ. of Technol.) EID2020-10 SDM2020-44 |
High-performance In–Ga–Zn–O (IGZO) Schottky diodes (SDs) were fabricated using hydrogenated IGZO (IGZO:H) at a maximum p... [more] | EID2020-10 SDM2020-44 pp.37-41 |
| EID, SDM, ITE-IDY [detail] | 2020-12-02 15:00 |
Online | Online | Coexistence of digital and analog resistive switching in Ta2O5-based ReRAM cells with TiN electrodes. Kazutaka Yamada, Tsunenobu Kimoto (Kyoto Univ.), Yusuke Nishi (Kyoto Univ./NIT, Maizuru College) EID2020-11 SDM2020-45 |
In this study, we have investigated the resistive switching (RS) characteristics of Ni/Ta2O5/TiN stack structure devices... [more] | EID2020-11 SDM2020-45 pp.42-45 |
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