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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 16 of 16  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2023-10-13
16:40
Miyagi Niche, Tohoku Univ. Formation process of GaN MOS interface suppressing interfacial oxidation
Tsurugi Kondo, Katsunori Ueno, Ryo Tanaka, Shinya Takashima, Masaharu Edo (Fuji Electric), Tomoyuki Suwa (NICHe, Tohoku Univ.) SDM2023-60
In this paper, we report the effects of MOS interfacial oxidation on electrical properties of GaN MOSFET and show improv... [more] SDM2023-60
pp.40-45
LQE, CPM, ED 2017-11-30
15:50
Aichi Nagoya Inst. tech. Low-damage etching of nitride semiconductors utilizing photo-electrochemical reactions for electron devices
Keisuke Uemura, Satoru Matsumoto, Masachika Toguchi, Keisuke Ito, Taketomo Sato (Hokkaido Univ.) ED2017-54 CPM2017-97 LQE2017-67
The photo-electrochemical oxidation and etching process was demonstrated in view of the damage-free etching for GaN and ... [more] ED2017-54 CPM2017-97 LQE2017-67
pp.23-26
SDM 2015-10-30
10:50
Miyagi Niche, Tohoku Univ. Ferroelectric BiFeO3 Formation with Oxigen Radical Treatment
Fuminobu Imaizumi, Tetsuya Goto, Akinobu Teramoto, Shigetoshi Sugawa (Tohoku Univ.) SDM2015-78
Oxygen radical treatment was applied to sputter-deposited BiFeO3 (BFO) thin film which is expected to be used for ferroe... [more] SDM2015-78
pp.41-44
SDM 2014-10-16
14:50
Miyagi Niche, Tohoku Univ. Introduction of Atomically Flattening of Silicon Surface in Shallow Trench Isolation Process Technology
Tetsuya Goto, Rihito Kuroda, Naoya Akagawa, Tomoyuki Suwa, Akinobu Teramoto, Xiang Li, Toshiki Obara, Daiki Kimoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.), Yuki Kumagai, Yutaka Kamata, Katsuhiko Shibusawa (LAPIS Semiconductor Miyagi) SDM2014-85
Atomically flattening technology was introduced to the widely-used complementary metal oxide silicon (CMOS) process empl... [more] SDM2014-85
pp.7-12
SDM 2014-06-19
09:50
Aichi VBL, Nagoya Univ. Investigation of Al-PMA Effect on Al2O3/GeOx/Ge Gate Stack
Yuta Nagatomi, Yuichi Nagaoka, Keisuke Yamamoto, Dong Wang, Hiroshi Nakashima (Kyushu Univ.) SDM2014-44
We investigated the Al-PMA effect on Al2O3/GeOX/Ge gate stacks. The Al-PMA is effective for Al2O3/GeOX/Ge gate stacks, s... [more] SDM2014-44
pp.7-10
OME, SDM 2013-04-25
13:20
Kagoshima Yakusima Environmental Culture Village Center Fabrication of biotransistors using nanoporous adonic oxide films
Kazuhiro Kudo, Shota Kurosawa, Hiroshi Yamauchi, Shigekazu Kuniyoshi, Masatoshi Sakai (Chiba Univ.) SDM2013-10 OME2013-10
Porous alumina formed owing to anodic oxidation have highly ordered nanostructures and are expected as various applicati... [more] SDM2013-10 OME2013-10
pp.49-52
SDM 2011-10-20
16:10
Miyagi Tohoku Univ. (Niche) [Special Talk] Science Based New Silicon Technologies
Tadahiro Ohmi (Tohoku Univ.) SDM2011-102
Current Silicon Technologies can fabricate LSI only on (100) Silicon surface using two dimensional planar structure MOS ... [more] SDM2011-102
pp.27-36
SDM 2011-07-04
15:00
Aichi VBL, Nagoya Univ. The effect of oxidation and reduction annealing on Vfb shift in ITO/HfO2 MOS capacitors
Toshihide Nabatame (NIMS), Hiroyuki Yamada (Shibaura Inst. of Tech.), Akihiko Ohi (NIMS), Tomoji Ohishi (Shibaura Inst. of Tech.), Toyohiro Chikyow (NIMS) SDM2011-64
We investigated effect of oxidation and reduction annealing on Vfb for In0.9Sn0.1 (ITO)/HfO2 (4.9 nm)/SiO2 MOS capacitor... [more] SDM2011-64
pp.81-85
SDM, ED
(2nd)
2011-06-29
- 2011-07-01
Overseas Legend Hotel, Daejeon, Korea Clear Difference between the Chemical Structure of SiO2/Si Interfaces Formed Using Oxygen Radicals and Oxygen Molecules
Tomoyuki Suwa, Akinobu Teramoto, Tadahiro Ohmi, Takeo Hattori (Tohoku Univ.)
Soft-x-ray-excited angle-resolved photoelectron spectroscopy studies on silicon dioxide films formed using oxygen radica... [more]
ED, SDM 2010-07-02
12:15
Tokyo Tokyo Inst. of Tech. Ookayama Campus High Integrity Gate Insulator Films on Atomically Flat Silicon Surface
Xiang Li, Rihito Kuroda, Tomoyuki Suwa, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) ED2010-93 SDM2010-94
A low temperature atomically flattening technology for Si(100) wafer is developed. By annealing in ultra pure argon ambi... [more] ED2010-93 SDM2010-94
pp.183-188
SDM 2009-10-30
13:00
Miyagi Tohoku University Recovery from Reactive Ion Etching Damage in SiO2 Films
Nobuhito Kawada, Satoshi Nagashima, Toru Ichikawa, Hiroshi Akahori (Toshiba Corp.) SDM2009-129
As the MOS device shrinkage progress, the influence of RIE(Reactive Ion Etching) damage becomes remarkable. Especially, ... [more] SDM2009-129
pp.51-56
EMD 2009-03-06
14:20
Tokyo Kougakuin Univ. Load - Resistance Characteristics of Contact Materials for Automobile Connectors
Takuya Yamanaka, Masaru Iko, Tatuya Nagase, Yasushi Saitoh, Terutaka Tamai, Kazuo Iida (Mie Univ.), Yasuhiro Hattori (AutoNetworks Technologies, Ltd.) EMD2008-139
Samples of tin plating used for the contact of automobile connector were aged at the high temperature, and those load &#... [more] EMD2008-139
pp.21-24
EMD, R 2009-02-20
10:40
Mie Sumitomo Wiring Systems LTD., Head Office Influence of Aging on Contact Resistance Characteristics of Tin Plated Contacts
Yuichi Tominaga, Takuya Yamanaka, Yasushi Saitoh, Terutaka Tamai, Kazuo Iida (Mie Univ.), Yasuhiro Hattori (AutoNetworks Tech, Ltd.) R2008-46 EMD2008-122
We kept tin plated specimens in the aging chamber heated at 100 ℃ in order to grow oxidation film. Then we measured cont... [more] R2008-46 EMD2008-122
pp.13-18
SDM 2008-10-10
15:45
Miyagi Tohoku Univ. Influence of B and P dopants on SiO2 film characteristics
Satoshi Nagashima, Hiroshi Akahori (Toshiba) SDM2008-166
In general, the silicon material that has doped impurities such as phosphorus, boron, and arsenic to the diffusion and t... [more] SDM2008-166
pp.63-68
SDM 2007-10-04
16:30
Miyagi Tohoku Univ. Ultrathin HfOxNy gate insulator formations utilizing ECR plasma process
Yusuke Nakano, Masaki Satoh, Shun-ichiro Ohmi (Tokyo Tech) SDM2007-178
Post deposition annealing (PDA) process such as rapid cooling process was investigated to improve electrical characteris... [more] SDM2007-178
pp.19-22
LQE 2007-05-25
16:30
Toyama Kanazawa Univ. Fabrication of Si wire waveguides by selective oxidation of Si
Koichi Iiyama, Satoshi Asai, Masahiro Wakashima (Kanazawa Univ.) LQE2007-15
Si photonic wire waveguides are fabricated by selective oxidation of Si. A SOI wafer on which a 3 mm-wide Si3N4 film is ... [more] LQE2007-15
pp.69-72
 Results 1 - 16 of 16  /   
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