Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
SDM |
2023-10-13 16:40 |
Miyagi |
Niche, Tohoku Univ. |
Formation process of GaN MOS interface suppressing interfacial oxidation Tsurugi Kondo, Katsunori Ueno, Ryo Tanaka, Shinya Takashima, Masaharu Edo (Fuji Electric), Tomoyuki Suwa (NICHe, Tohoku Univ.) SDM2023-60 |
In this paper, we report the effects of MOS interfacial oxidation on electrical properties of GaN MOSFET and show improv... [more] |
SDM2023-60 pp.40-45 |
LQE, CPM, ED |
2017-11-30 15:50 |
Aichi |
Nagoya Inst. tech. |
Low-damage etching of nitride semiconductors utilizing photo-electrochemical reactions for electron devices Keisuke Uemura, Satoru Matsumoto, Masachika Toguchi, Keisuke Ito, Taketomo Sato (Hokkaido Univ.) ED2017-54 CPM2017-97 LQE2017-67 |
The photo-electrochemical oxidation and etching process was demonstrated in view of the damage-free etching for GaN and ... [more] |
ED2017-54 CPM2017-97 LQE2017-67 pp.23-26 |
SDM |
2015-10-30 10:50 |
Miyagi |
Niche, Tohoku Univ. |
Ferroelectric BiFeO3 Formation with Oxigen Radical Treatment Fuminobu Imaizumi, Tetsuya Goto, Akinobu Teramoto, Shigetoshi Sugawa (Tohoku Univ.) SDM2015-78 |
Oxygen radical treatment was applied to sputter-deposited BiFeO3 (BFO) thin film which is expected to be used for ferroe... [more] |
SDM2015-78 pp.41-44 |
SDM |
2014-10-16 14:50 |
Miyagi |
Niche, Tohoku Univ. |
Introduction of Atomically Flattening of Silicon Surface in Shallow Trench Isolation Process Technology Tetsuya Goto, Rihito Kuroda, Naoya Akagawa, Tomoyuki Suwa, Akinobu Teramoto, Xiang Li, Toshiki Obara, Daiki Kimoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.), Yuki Kumagai, Yutaka Kamata, Katsuhiko Shibusawa (LAPIS Semiconductor Miyagi) SDM2014-85 |
Atomically flattening technology was introduced to the widely-used complementary metal oxide silicon (CMOS) process empl... [more] |
SDM2014-85 pp.7-12 |
SDM |
2014-06-19 09:50 |
Aichi |
VBL, Nagoya Univ. |
Investigation of Al-PMA Effect on Al2O3/GeOx/Ge Gate Stack Yuta Nagatomi, Yuichi Nagaoka, Keisuke Yamamoto, Dong Wang, Hiroshi Nakashima (Kyushu Univ.) SDM2014-44 |
We investigated the Al-PMA effect on Al2O3/GeOX/Ge gate stacks. The Al-PMA is effective for Al2O3/GeOX/Ge gate stacks, s... [more] |
SDM2014-44 pp.7-10 |
OME, SDM |
2013-04-25 13:20 |
Kagoshima |
Yakusima Environmental Culture Village Center |
Fabrication of biotransistors using nanoporous adonic oxide films Kazuhiro Kudo, Shota Kurosawa, Hiroshi Yamauchi, Shigekazu Kuniyoshi, Masatoshi Sakai (Chiba Univ.) SDM2013-10 OME2013-10 |
Porous alumina formed owing to anodic oxidation have highly ordered nanostructures and are expected as various applicati... [more] |
SDM2013-10 OME2013-10 pp.49-52 |
SDM |
2011-10-20 16:10 |
Miyagi |
Tohoku Univ. (Niche) |
[Special Talk]
Science Based New Silicon Technologies Tadahiro Ohmi (Tohoku Univ.) SDM2011-102 |
Current Silicon Technologies can fabricate LSI only on (100) Silicon surface using two dimensional planar structure MOS ... [more] |
SDM2011-102 pp.27-36 |
SDM |
2011-07-04 15:00 |
Aichi |
VBL, Nagoya Univ. |
The effect of oxidation and reduction annealing on Vfb shift in ITO/HfO2 MOS capacitors Toshihide Nabatame (NIMS), Hiroyuki Yamada (Shibaura Inst. of Tech.), Akihiko Ohi (NIMS), Tomoji Ohishi (Shibaura Inst. of Tech.), Toyohiro Chikyow (NIMS) SDM2011-64 |
We investigated effect of oxidation and reduction annealing on Vfb for In0.9Sn0.1 (ITO)/HfO2 (4.9 nm)/SiO2 MOS capacitor... [more] |
SDM2011-64 pp.81-85 |
SDM, ED (2nd) |
2011-06-29 - 2011-07-01 |
Overseas |
Legend Hotel, Daejeon, Korea |
Clear Difference between the Chemical Structure of SiO2/Si Interfaces Formed Using Oxygen Radicals and Oxygen Molecules Tomoyuki Suwa, Akinobu Teramoto, Tadahiro Ohmi, Takeo Hattori (Tohoku Univ.) |
Soft-x-ray-excited angle-resolved photoelectron spectroscopy studies on silicon dioxide films formed using oxygen radica... [more] |
|
ED, SDM |
2010-07-02 12:15 |
Tokyo |
Tokyo Inst. of Tech. Ookayama Campus |
High Integrity Gate Insulator Films on Atomically Flat Silicon Surface Xiang Li, Rihito Kuroda, Tomoyuki Suwa, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) ED2010-93 SDM2010-94 |
A low temperature atomically flattening technology for Si(100) wafer is developed. By annealing in ultra pure argon ambi... [more] |
ED2010-93 SDM2010-94 pp.183-188 |
SDM |
2009-10-30 13:00 |
Miyagi |
Tohoku University |
Recovery from Reactive Ion Etching Damage in SiO2 Films Nobuhito Kawada, Satoshi Nagashima, Toru Ichikawa, Hiroshi Akahori (Toshiba Corp.) SDM2009-129 |
As the MOS device shrinkage progress, the influence of RIE(Reactive Ion Etching) damage becomes remarkable. Especially, ... [more] |
SDM2009-129 pp.51-56 |
EMD |
2009-03-06 14:20 |
Tokyo |
Kougakuin Univ. |
Load - Resistance Characteristics of Contact Materials for Automobile Connectors Takuya Yamanaka, Masaru Iko, Tatuya Nagase, Yasushi Saitoh, Terutaka Tamai, Kazuo Iida (Mie Univ.), Yasuhiro Hattori (AutoNetworks Technologies, Ltd.) EMD2008-139 |
Samples of tin plating used for the contact of automobile connector were aged at the high temperature, and those load &#... [more] |
EMD2008-139 pp.21-24 |
EMD, R |
2009-02-20 10:40 |
Mie |
Sumitomo Wiring Systems LTD., Head Office |
Influence of Aging on Contact Resistance Characteristics of Tin Plated Contacts Yuichi Tominaga, Takuya Yamanaka, Yasushi Saitoh, Terutaka Tamai, Kazuo Iida (Mie Univ.), Yasuhiro Hattori (AutoNetworks Tech, Ltd.) R2008-46 EMD2008-122 |
We kept tin plated specimens in the aging chamber heated at 100 ℃ in order to grow oxidation film. Then we measured cont... [more] |
R2008-46 EMD2008-122 pp.13-18 |
SDM |
2008-10-10 15:45 |
Miyagi |
Tohoku Univ. |
Influence of B and P dopants on SiO2 film characteristics Satoshi Nagashima, Hiroshi Akahori (Toshiba) SDM2008-166 |
In general, the silicon material that has doped impurities such as phosphorus, boron, and arsenic to the diffusion and t... [more] |
SDM2008-166 pp.63-68 |
SDM |
2007-10-04 16:30 |
Miyagi |
Tohoku Univ. |
Ultrathin HfOxNy gate insulator formations utilizing ECR plasma process Yusuke Nakano, Masaki Satoh, Shun-ichiro Ohmi (Tokyo Tech) SDM2007-178 |
Post deposition annealing (PDA) process such as rapid cooling process was investigated to improve electrical characteris... [more] |
SDM2007-178 pp.19-22 |
LQE |
2007-05-25 16:30 |
Toyama |
Kanazawa Univ. |
Fabrication of Si wire waveguides by selective oxidation of Si Koichi Iiyama, Satoshi Asai, Masahiro Wakashima (Kanazawa Univ.) LQE2007-15 |
Si photonic wire waveguides are fabricated by selective oxidation of Si. A SOI wafer on which a 3 mm-wide Si3N4 film is ... [more] |
LQE2007-15 pp.69-72 |