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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| LQE, ED, CPM | 2014-11-28 09:30 |
Osaka | Realization of Lasing Action of GaN/AlGaN based Terahertz Quantum Cascade Laser using Two Quantum Well Structure Wataru Terashima, Hideki Hirayama (RIKEN)  ED2014-85 CPM2014-142 LQE2014-113 |
III-Nitride semiconductors having huge longitudinal optical phonon energies are promising as materials to solve a proble... [more] | ED2014-85 CPM2014-142 LQE2014-113 pp.59-62 |
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| LQE, ED, CPM | 2014-11-28 09:55 |
Osaka | MOCVD Growth of GaN-based THz Quantum Cascade Laser and Observation of Emission at 7 THz Shiro Toyoda (RIKEN/Saitama Univ.), Wataru Terashima (RIKEN), Norihiko Kamata (Saitama Univ.), Hideki Hirayama (RIKEN/Saitama Univ.) ED2014-84 CPM2014-141 LQE2014-112 |
Terahertz quantum cascade lasers (THz-QCLs) are attracting attention for use as a lot of applications, because they are ... [more] | ED2014-84 CPM2014-141 LQE2014-112 pp.55-58 |
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| CPM, ED, SDM | 2014-05-28 11:10 |
Aichi | Investigations on Sb incoporations and surface morphologies of GaNSb Daisuke Komori, Hiroki Sasajima, Tomoyuki Suzuki, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya (meijo Univ.), Isamu Akasaki (meijo Univ./nagoya Univ.) ED2014-19 CPM2014-2 SDM2014-17 |
It is difficult to form high quality nitride-based heterostructures with widely different compositions since large diffe... [more] | ED2014-19 CPM2014-2 SDM2014-17 pp.7-10 |
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| SDM, ED | 2013-02-27 13:30 |
Hokkaido | Hokkaido Univ. | [Invited Talk]
Ballistic transport and photovoltaic effect in graphene/h-BN Tomoki Machida (Univ. of Tokyo/JST), Satoru Masubuchi, Masahiro Onuki, Kazuyuki Iguchi, Sei Morikawa, Takehiro Yamaguchi, Miho Arai (Univ. of Tokyo), Kenji Watanabe, Takashi Taniguchi (NIMS) ED2012-128 SDM2012-157 |
We study magnetotransport in ballistic graphene mesoscopic wires on hexagonal boron nitride (h-BN). We observed anomalou... [more] | ED2012-128 SDM2012-157 pp.1-5 |
| ED, LQE, CPM | 2012-11-29 10:25 |
Osaka | Osaka City University | Layered boron nitride as a release layer for mechanical transfer of GaN-based devices Yasuyuki Kobayashi, Kazuhide Kumakura, Tetsuya Akasaka, Hideki Yamamoto, Toshiki Makimoto (NTT) ED2012-66 CPM2012-123 LQE2012-94 |
Nitride semiconductors are the preferential choice in various devices applications, such as optoelectronics and high-pow... [more] | ED2012-66 CPM2012-123 LQE2012-94 p.7 |
| ED, LQE, CPM | 2012-11-30 13:15 |
Osaka | Osaka City University | Mg acceptor activation inp-GaN of the structure with n-GaN surface Yuka Kuwano, Mitsuru Kaga, Takatoshi Morita, Kouji Yamashita, , Tetsuya Takeuchi, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki (Meijo Univ.) ED2012-83 CPM2012-140 LQE2012-111 |
Thermal annealing step is required to dissociate acceptor-hydrogen complexes and electrically activate the acceptor dopa... [more] | ED2012-83 CPM2012-140 LQE2012-111 pp.81-85 |
| SDM, ED (Workshop) |
2012-06-27 11:00 |
Okinawa | Okinawa Seinen-kaikan | [Invited Talk]
III-nitride-based Visible-blind and Solar-blind Photodetectors Hai Lu, Rong Zhang, Youdou Zheng (School of ESE, Nanjing Univ.) |
Group-III nitride semiconductors have attracted much attention in ultraviolet (UV) photodetector applications due to the... [more] | |
| LQE, ED, CPM | 2011-11-18 15:05 |
Kyoto | Katsura Hall，Kyoto Univ. | Fabrication and characterization of near-infrared (1.46 um) GaN-based nanocolumn LEDs with In-rich InGaN active layer Jumpei Kamimura, Katsumi Kishino, Kouichi Kamiyama, Akihiko Kikuchi (Sophia Univ.) ED2011-98 CPM2011-147 LQE2011-121 |
We demonstrated the longest wavelength operation of InGaN-based LEDs emitting at 1.46 um under DC current injection at t... [more] | ED2011-98 CPM2011-147 LQE2011-121 pp.127-130 |
| CPM, SDM, ED | 2011-05-20 09:25 |
Aichi | Nagoya Univ. (VBL) | Current path control with Nitride semiconductor-based tunnel junction Kouji Yamashita, Mitsuru Kaga, Kouta Yagi (Meijo Univ.), Atsushi Suzuki (EL-SEED Corp.), Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama (Meijo Univ.), Isamu Akasaki (Meijo Univ./Nagoya Univ.), Hiroshi Amano (Nagoya Univ.) ED2011-20 CPM2011-27 SDM2011-33 |
Current path control in nitride semiconductor-based devices with tunnel junctions have been investigated along the follo... [more] | ED2011-20 CPM2011-27 SDM2011-33 pp.99-104 |
| CPM, SDM, ED | 2011-05-20 09:50 |
Aichi | Nagoya Univ. (VBL) | Fabrication of GaN-based Tunnel Junctions Mitsuru Kaga, Daisuke Iida (Meijo Univ), Tsukasa Kitano (EL-SEED), Kouji Yamashita, Kouta Yagi, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama (Meijo Univ), Isamu Akasaki (Meijo Univ/Nagoya Univ), Hiroshi Amano (Nagoya Univ) ED2011-21 CPM2011-28 SDM2011-34 |
We have investigated nitride semiconductor-based tunnel junctions for a novel current injection, not restricted with the... [more] | ED2011-21 CPM2011-28 SDM2011-34 pp.105-110 |
| CPM | 2010-10-29 09:25 |
Nagano | Estimation of nitride layer thickness and characterization of the interface between SiC and nitride layer prepared by direct nitridation Shinichiro Suzuki, Yusuke Murata, Mitsunori Henmi, Tomohiko Yamakami, Rinpei Hayashibe, Kiichi Kamimura (Shinshu Univ.) CPM2010-100 |
A nitride layer was formed on a SiC surface by direct nitridation in N$_{2}$ or NH$_{3}$. The surface was characterized ... [more] | CPM2010-100 pp.47-50 |
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| ED, LQE, CPM | 2009-11-19 14:20 |
Tokushima | Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) | Theoretical Studies on the Characteristic Electronic Structures of In-Containint Nitride Seimiconductors Based of the First Principles Calculations Kenji Shiraishi, Jun-ichi Iwata (Univ. of Tsukuba/JST), Teruaki Obata (Univ. of Tsukuba), Atsushi Oshiyama (Univ. of Tokyo/JST) ED2009-138 CPM2009-112 LQE2009-117 |
In-containing nitride semiconductors exhibit characteristic behavior which can be ascribed to the large difference in th... [more] | ED2009-138 CPM2009-112 LQE2009-117 pp.47-50 |
| SDM, ED | 2009-06-25 08:30 |
Overseas | Haeundae Grand Hotel, Busan, Korea | [Invited Talk]
Electron Devices Based on GaN and Related Nitride Semiconductors Masaaki Kuzuhara (Univ. of Fukui) ED2009-70 SDM2009-65 |
State-of-the-art performance and future perspectives of III-nitride high-voltage and high-power transistors have been de... [more] | ED2009-70 SDM2009-65 pp.87-92 |
| SDM, ED | 2009-06-25 13:15 |
Overseas | Haeundae Grand Hotel, Busan, Korea | Effect of Ion-Beam-Induced Damage on Luminescence Properties in Tb-Implanted AlxGa1-xN Ji-Ho Park, Hiroshi Okada, Akihiro Wakahara, Yuzo Furukawa (Toyohashi Univ. of Tech.), Yong-Tae Kim (Dankook Univ.), Jonghan Song (KIST), Ho-Jung Chang (Dankook Univ.), Shin-ichiro Sato, Takeshi Ohshima (JAEA, Takasaki) ED2009-82 SDM2009-77 |
We investigated the effect of ion-beam-induced damage on luminescence properties for rare earth ions -doped III-nitride ... [more] | ED2009-82 SDM2009-77 pp.141-144 |
| LQE, ED, CPM | 2008-11-27 09:30 |
Aichi | Nagoya Institute of Technology | Fabrication of regularly arranged InGaN/GaN nanocolumns by Ti mask selective area growth throughout rf-plasma-assisted molecular-beam epitaxy Hiroto Sekiguchi, Akihiko Kikuchi, Katsumi Kishino (Sophia Univ.) ED2008-152 CPM2008-101 LQE2008-96 |
GaN nanocolumns have high optical properties due to dislocation-free nature. We report the fabrication of regularly arra... [more] | ED2008-152 CPM2008-101 LQE2008-96 pp.1-6 |
| LQE, ED, CPM | 2008-11-27 09:55 |
Aichi | Nagoya Institute of Technology | Random lasing in GaN nanocolumns Masaru Sakai, Katsumi Kishino, Akihiko Kikuchi, Hiroto Sekiguchi, Yuta Inose, Kazuhiro Ema, Tomi Ohtsuki (Sophia Univ.) ED2008-153 CPM2008-102 LQE2008-97 |
Self-organized GaN nanocolumns are one-dimensional columnar nano-crystals, which have about 100 nm in diameter and 1 $\m... [more] | ED2008-153 CPM2008-102 LQE2008-97 pp.7-12 |
| CPM | 2008-08-04 14:00 |
Hokkaido | Muroran Institute of Technology | Development of Surface-Wave Plasma Generation Apparatus and Application to Semiconductor Processing Hisashi Fukuda (Muroran Inst. Technol.), Masakazu Furukawa (ARIC) CPM2008-41 |
We have developed a high-density surface-wave plasma apparatus for the application to next generation semiconductor fabr... [more] | CPM2008-41 pp.1-4 |
| CPM, ED, LQE | 2007-10-11 13:55 |
Fukui | Fukui Univ. | Fabrication of GaN/AlGaN nanocolumn LEDs by rf-assisted molecular beam epitaxy Hiroto Sekiguchi (Sophia Univ./JST), Kei Kato, Jo Tanaka (Sophia Univ.), Akihiko Kikuchi, Katsumi Kishino (Sophia Univ./JST) ED2007-158 CPM2007-84 LQE2007-59 |
GaN nanocolumns have excellent optical characteristics due to islocation-free nature. GaN/AlGaN nanocolumn LEDs grown on... [more] | ED2007-158 CPM2007-84 LQE2007-59 pp.13-17 |
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