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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM, ED, CPM | 2022-05-27 16:15 |
Online | Online | Wet etching of GaN utilizing a photo-electrochemical reaction for functional materials Taketomo Sato, Masachika Toguchi (Hokkaido Univ.)  ED2022-13 CPM2022-7 SDM2022-20 |
A gallium nitride (GaN) porous structure was formed by wet etching utilizing electrochemical reactions. The refractive i... [more] | ED2022-13 CPM2022-7 SDM2022-20 pp.25-28 |
| MW | 2022-03-03 11:25 |
Online | Online | A 5.8-GHz band 5-W rectenna with a heat-dissipation antenna Fumiya Komatsu, Koichi Kikkawa, Akihiko Mugitani, Naoki Sakai, Kenji Itoh (KIT) MW2021-117 |
In this paper, a 5.8 GHz band 5 W rectenna with a heat-dissipation antenna is described. The rectenna consists of a shor... [more] | MW2021-117 pp.36-41 |
| ED | 2021-12-09 14:45 |
Online | Online | Oxidation resistant coating of graphene-oxide-semiconductor electron emission device for low earth orbit applications Naoyuki Matsumoto (YNU/AIST), Yoshinori Takao (YNU), Masayoshi Nagao, Katsuhisa Murakami (AIST) ED2021-45 |
A graphene-oxide-semiconductor (GOS) planar-type electron source was protected with a hexagonal boron nitride (h-BN) fil... [more] | ED2021-45 pp.38-42 |
| ED, CPM, LQE | 2021-11-26 14:55 |
Online | Online | High-breakdown-voltage Al0.36Ga0.64N-channel HFETs with a dual AlN/AlGaInN barrier layer Akiyoshi Inoue, Sakura Tanaka, Takashi Egawa, Makoto Miyoshi (NIT) ED2021-32 CPM2021-66 LQE2021-44 |
In this study, we fabricated and characterized heterojunction field-effect transistors (HFETs) based on an Al0.36Ga0.64N... [more] | ED2021-32 CPM2021-66 LQE2021-44 pp.79-82 |
| ED, CPM, LQE | 2021-11-26 16:25 |
Online | Online | Fabrication of Recessed-gate AlGaInN/AlGaN HFETs utilizing a photo-electrochemical (PEC) etching. Kosaku Ito, Yuto Komatsu, Masachika Toguchi (Hokkaido Univ.), Akiyoshi Inoue, Sakura Tanaka, Makoto Miyoshi (Nagoya Inst. of Tech), Taketomo Sato (Hokkaido Univ.) ED2021-35 CPM2021-69 LQE2021-47 |
We utilized photo-electrochemical (PEC) etching for fabrication of recessed-gate AlGaInN/AlGaN MIS HFETs. The PEC reacti... [more] | ED2021-35 CPM2021-69 LQE2021-47 pp.91-94 |
| CPM | 2021-10-27 14:00 |
Online | Online | Chemical vapor deposition of layered carbon nitride film Noriyuki Urakami, Kenshuke Takashima, Yoshio Hashimoto (Shinshu Univ.) CPM2021-28 |
Graphitic carbon nitride (g-C3N4) exhibits semiconducting properties and is a promising candidate for use as a metal- fr... [more] | CPM2021-28 pp.31-35 |
| SDM | 2021-10-21 10:45 |
Online | Online | [Invited Talk]
Influence of Fluorine on Reliabilities of SiO2 and SixNy Films Yuichiro Mitani (Tokyo City Univ.) SDM2021-44 |
In this paper, the influence of Fluorine incorporation into SiO2 and Si nitride (SixNy) films which are widely used in t... [more] | SDM2021-44 pp.1-4 |
| EMT, MWP, PN, IEE-EMT [detail] | 2021-01-21 15:45 |
Online | Online | [Invited Talk]
Kerr frequency comb generation in silicon nitride microring resonators and characterization of their mode-spacing frequencies Kentaro Furusawa, Norihiko Sekine, Akifumi Kasamatsu (NICT) PN2020-38 EMT2020-56 MWP2020-39 |
Kerr frequency combs in high-Q microring resonators have attracted a lot of attention due to their capabilities of gener... [more] | PN2020-38 EMT2020-56 MWP2020-39 pp.46-49 |
| EID, SDM, ITE-IDY [detail] | 2020-12-02 15:00 |
Online | Online | Coexistence of digital and analog resistive switching in Ta2O5-based ReRAM cells with TiN electrodes. Kazutaka Yamada, Tsunenobu Kimoto (Kyoto Univ.), Yusuke Nishi (Kyoto Univ./NIT, Maizuru College) EID2020-11 SDM2020-45 |
In this study, we have investigated the resistive switching (RS) characteristics of Ni/Ta2O5/TiN stack structure devices... [more] | EID2020-11 SDM2020-45 pp.42-45 |
| LQE, CPM, ED | 2020-11-26 13:30 |
Online | Online | High-breakdown-voltage AlGaN channel HFETs with selective-area regrowth ohmic contacts Akiyoshi Inoue, Hiroki Harada, Mizuki Yamanaka, Takashi Egawa, Makoto Miyoshi (NIT) ED2020-7 CPM2020-28 LQE2020-58 |
Al0.19Ga0.81N-channel metal-insulator-semiconductor (MIS) HFETs employing a quaternary AlGaInN barrier layer and a selec... [more] | ED2020-7 CPM2020-28 LQE2020-58 pp.25-28 |
| LQE, CPM, ED | 2020-11-26 15:30 |
Online | Online | Enhanced Breakdown Voltage in AlGaN/GaN HEMTs by Oxygen Plasma Treatment Shunsuke Kamiya, Takashi Nishitani, Yu Matsuda, Nozomu Takano, Joel T. Asubar, Hirokuni Tokuda (Univ. of Fukui), Masaaki Kuzuhara (Kwansei Gakuin Univ.) ED2020-12 CPM2020-33 LQE2020-63 |
With its high critical electric field as consequence of its wide bandgap, gallium nitride (GaN) is considered a leading ... [more] | ED2020-12 CPM2020-33 LQE2020-63 pp.45-48 |
| LQE, CPM, ED | 2020-11-27 14:10 |
Online | Online | First demonstration of InGaN QW tunable single-mode laser with periodically slotted structure Masahiro Uemukai, Akihiro Higuchi, Tomoyuki Tanikawa, Ryuji Katayama (Osaka Univ.) ED2020-21 CPM2020-42 LQE2020-72 |
Nitride semiconductors such as GaN and AlN have strong optical nonlinearity, and they can be applied to nonlinear optica... [more] | ED2020-21 CPM2020-42 LQE2020-72 pp.79-82 |
| LQE, CPM, ED | 2020-11-27 14:30 |
Online | Online | Crystalline Quality Improvement of Sputtered h-BN on Sapphire by High-Temperature Annealing Ryoji Kataoka, Haruhiko Koizumi, Sho Iwayama, Hideto Miyake (Mie Univ.) ED2020-22 CPM2020-43 LQE2020-73 |
Hexagonal boron nitride(h-BN) is a two-dimensional layered materials and is expected to functions as a strain relaxation... [more] | ED2020-22 CPM2020-43 LQE2020-73 pp.83-86 |
| CPM | 2020-10-29 14:30 |
Online | Online | Growth of InN nanopillar-crystals on steering-crystal-formed multi-crystalline Si substrates Houyao Xue, Koki Shiraishi, Yosuke Izuka, Shingo Taniguchi, Sora Saito, Tsubasa Saito, Yuichi Sato (Akita Univ) CPM2020-15 |
InN nanopillar-crystals were formed using multi-crystalline Si, which is widely used for low-cost solar cell formation, ... [more] | CPM2020-15 pp.15-18 |
| MWP, PN, EMT, PEM, IEE-EMT [detail] | 2020-01-30 14:55 |
Kyoto | Dosisha Univ. | Verification of self-phase modulation-based nonlinear optical device using Si3N4 waveguide Koji Takahashi, Daiki Ishihara, Yuta Kaihori (Osaka Univ.), Takashi Inoue (Hamamatsu Photonics), Tsuyoshi Konishi (Osaka Univ.) PN2019-42 EMT2019-82 MWP2019-56 |
A Si3N4 waveguide is expected to solve the issue of two photon absorption (TPA) on a Si waveguide at relatively high pow... [more] | PN2019-42 EMT2019-82 MWP2019-56 pp.45-48 |
| EID, ITE-IDY, IEIJ-SSL, SID-JC, IEE-EDD [detail] | 2020-01-23 13:05 |
Tottori | Tottori Univ. | [Poster Presentation]
CVD growth of h-BN thin films on c-plane sapphire and Si (111) substrates Tomoyasu Nakama, Kazuki Matsusita, Taira Watanabe, Hiroko Kominami, Kazuhiko Hara (Shizuoka Univ.) |
The hexagonal boron nitride (h-BN) thin films were grown on c-plane sapphire and Si (111) substrates by low-pressure che... [more] | |
| CPM, LQE, ED | 2019-11-22 14:40 |
Shizuoka | Shizuoka Univ. (Hamamatsu) | Evaluation of III-V nitride by photothermal deflection spectroscopy Masatomo Sumiya (NIMS) ED2019-58 CPM2019-77 LQE2019-101 |
In order to improve the performance of power electronic and photo-passive devices, it is important to evaluate the in-ga... [more] | ED2019-58 CPM2019-77 LQE2019-101 pp.107-110 |
| ED | 2019-11-22 12:05 |
Tokyo | Planar-type electron source based on a graphene/h-BN heterostructure Tomoya Igari (Univ. of Tsukuba/AIST), Masayoshi Nagao (AIST), Kazutaka Mitsuishi (NIMS), Masahiro Sasaki, Yoichi Yamada (Univ. of Tsukuba), Katsuhisa Murakami (AIST/Univ. of Tsukuba) ED2019-75 |
In this study, a novel planar-type electron emission device based on atomic layer materials of graphene/$h$-BN heterostr... [more] | ED2019-75 pp.63-66 |
|
| OCS, LQE, OPE | 2019-10-17 15:00 |
Kagoshima | Characteristic analysis of SiN waveguides with different structures and fabrication methods for 1.3 μm multi-wavelength lasers Yuta Yokomura, Takuya Mitarai, Tomohiro Amemiya, Nobuhiko Nishiyama (Tokyotech) OCS2019-35 OPE2019-73 LQE2019-51 |
A new grid-free WDM system has been proposed in order to overcome the problems of conventional WDM systems that are subj... [more] | OCS2019-35 OPE2019-73 LQE2019-51 pp.45-48 |
|
| SAT | 2019-10-10 15:20 |
Fukuoka | JR HAKATA CITY {10F RoomA+B} | Development of highly maintainable and reliable RF transceiver for satellite base stations Munehiro Matsui, Akira Matsushita, Fumihiro Yamashita (NTT) SAT2019-52 |
Maintainability and reliability is required for sustainable operation of satellite communication system. This paper pres... [more] | SAT2019-52 pp.21-26 |
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