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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ED, SDM, CPM | 2024-05-24 11:55 |
Hokkaido | (Primary: On-site, Secondary: Online) |
Charge transport control of layered carbon nitride films Noriyuki Urakami, Masaki Tachibana, Yoshio Hashimoto (Shinshu Univ.) |
(To be available after the conference date) [more] | |
| CPM | 2024-02-29 10:45 |
Yamagata | Yamagata University (Primary: On-site, Secondary: Online) |
Fabrication and Evaluation of Aluminum Nitride Thin Film Using Microwave Plasma-Assisted Low-Temperature Atomic Layer Deposition Tomoya Takahashi, Masanori Miura, Bashir Ahmmad, Fumihiko Hirose (Yamagata Univ.)  CPM2023-99 |
Aluminum nitride is expected to be used as a passivation film for devices due to its wide band gap and stability to wate... [more] | CPM2023-99 pp.11-14 |
| ED | 2023-12-07 14:50 |
Aichi | WINC AICHI | Fabrication of Hafnium Nitride Spindt-type Field Emitter Arrays by Triode High Power Pulsed Magnetron Sputtering Shun Kondo (Seikei University/AIST), Takeo Nakano, Md. Suruz Mian (Seikei University), Masayoshi Nagao, Hiromasa Murata (AIST) ED2023-41 |
We have been attempting to fabricate Spindt-type emitter using the triode high-power pulsed magnetron sputtering (t-HPPM... [more] | ED2023-41 pp.11-14 |
| ED | 2023-12-08 09:50 |
Aichi | WINC AICHI | Protection Methods of Graphene-Oxide-Semiconductor Electron Emission Sources against Oxidizing Environments and Their Effects on Electron Emission Properties Ren Mutsukawa, Yoshinori Takao (YNU), Masayoshi Nagao, Hiromasa Murata, Katsuhisa Murakami (AIST) ED2023-48 |
Graphene-oxide-semiconductor (GOS) electron emission devices can emit electrons at low voltages, which are expected to b... [more] | ED2023-48 pp.39-42 |
| LQE, ED, CPM | 2023-11-30 13:05 |
Shizuoka | AlGaInN/GaN highhigh-electron mobility transistors with a thin unintentionally doped GaN channel and an AlN back barrier formed using a single single-crystal AlN substrate Tomoyuki Kawaide, Yoshinobu Kometani, Sakura Tanaka, Takashi Egawa, Makoto Miyoshi (Nagoya Inst. Tech) ED2023-14 CPM2023-56 LQE2023-54 |
A high-electron-mobility transistor (HEMT) structure with a strain-engineered quaternary AlGaInN barrier layer, a thin u... [more] | ED2023-14 CPM2023-56 LQE2023-54 pp.1-5 |
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| LQE, ED, CPM | 2023-11-30 16:20 |
Shizuoka | Design and fabrication of InGaN-based broadband light-emitting structures toward flexible electrical spectral modulation Haruyoshi Miyawaki, Yoshinobu Matsuda, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) ED2023-21 CPM2023-63 LQE2023-61 |
InGaN-based three-dimensional structures can realize multiwavelength-emitting structures without phosphors. Recently, we... [more] | ED2023-21 CPM2023-63 LQE2023-61 pp.36-39 |
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| LQE, ED, CPM | 2023-11-30 16:45 |
Shizuoka | Approaches toward broadband emission from semipolar InGaN quantum wells on GaN microlens structures Shogo Fukushige, Yoshinobu Matsuda, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) ED2023-22 CPM2023-64 LQE2023-62 |
InGaN quantum wells (QWs) on three-dimensional (3D) structures provide multiwavelength emission without phosphors. Recen... [more] | ED2023-22 CPM2023-64 LQE2023-62 pp.40-43 |
|
| SDM | 2023-11-10 14:40 |
Tokyo | (Primary: On-site, Secondary: Online) |
[Invited Talk]
Characterization of Physical Properties in GaN under High Electric Field
-- Impact Ionization Coefficients and Critical Electric Field -- Takuya Maeda (UTokyo) SDM2023-72 |
The accurate device simulation and prediction of the safe operating region for power devices require precise values of m... [more] | SDM2023-72 pp.41-46 |
| SDM | 2023-10-13 14:30 |
Miyagi | Niche, Tohoku Univ. | [Invited Talk]
Determination of charge centroid location and energy depth of charge carriers trapped in silicon nitride charge-trap layers Kiyoteru Kobayashi (Tokai Univ.) SDM2023-56 |
Metal-oxide-nitride-oxide-semiconductor (MONOS) field-effect transistors have been employed for memory cells in three-di... [more] | SDM2023-56 pp.13-20 |
| SDM | 2023-10-13 16:40 |
Miyagi | Niche, Tohoku Univ. | Formation process of GaN MOS interface suppressing interfacial oxidation Tsurugi Kondo, Katsunori Ueno, Ryo Tanaka, Shinya Takashima, Masaharu Edo (Fuji Electric), Tomoyuki Suwa (NICHe, Tohoku Univ.) SDM2023-60 |
In this paper, we report the effects of MOS interfacial oxidation on electrical properties of GaN MOSFET and show improv... [more] | SDM2023-60 pp.40-45 |
| LQE, OPE, CPM, EMD, R | 2023-08-24 15:50 |
Miyagi | Tohoku university (Primary: On-site, Secondary: Online) |
[Invited Talk]
Growth and applications of nitride semiconductors on h-BN Yasuyuki Kobayashi (Hirosaki Univ.), Masanobu Hiroki, Kazuhide Kumakura (NTT Basic Research Lab.) R2023-24 EMD2023-19 CPM2023-29 OPE2023-68 LQE2023-15 |
We have successfully demonstrated that nitride semiconductors were grown on 3-nm-thick hexagonal boron nitride (h-BN) la... [more] | R2023-24 EMD2023-19 CPM2023-29 OPE2023-68 LQE2023-15 pp.42-44 |
| CPM | 2023-08-01 09:45 |
Hokkaido | (Primary: On-site, Secondary: Online) |
Fabrication of SiC/AlN multilayer structure on 3°off-axis Si(110) substrate and graphene formation thereon Ryosuke Saito, Yuki Nara, Daiki Kasai, Haruto Koriyama, Yoshiharu Enta, Hideki Nakazawa (Hirosaki Univ.) CPM2023-19 |
We have grown aluminum nitride (AlN) films on 3 ̊off-axis Si(110) substrates by pulsed laser deposition (PLD) and formed... [more] | CPM2023-19 pp.29-32 |
| QIT (2nd) |
2023-05-29 16:30 |
Kyoto | Katsura Campus, Kyoto University | [Poster Presentation]
Single photon emission from single defect center in hexagonal boron nitride by Anti-Stokes excitation Yudai Okashiro, Konosuke Shimazaki, Kazuki Suzuki (Kyoto Univ), Hideaki Tkashima (Chitose Univ), Igor Ahanorovich (UTS), Shigeki Takeuchi (Kyoto Univ) |
Recently, hexagonal boron nitride (hBN) with single defect centers has attracted much attention as a single photon sourc... [more] | |
| CPM, ED, SDM | 2023-05-19 16:30 |
Aichi | Nagoya Institute of Technology (Primary: On-site, Secondary: Online) |
Low-damage photo-electrochemical etching and electrochemical characterization of p-GaN layers grown on n-GaN substrates Umi Takatsu, Kouta Kubo, Taketomo Sato (Hokkaido Univ.) ED2023-7 CPM2023-7 SDM2023-24 |
The effect of photoelectrochemical (PEC) etching on intentionally damaged p-GaN surfaces was investigated. The electroch... [more] | ED2023-7 CPM2023-7 SDM2023-24 pp.28-31 |
| ITE-IDY, IEIJ-SSL, EID, SID-JC, IEE-EDD [detail] | 2023-01-27 15:25 |
Online | Online (Zoom) | Low - pressure CVD of hexagonal BN thin films at high temperatures Taiki Oishi, Taira Watanabe, Yuki Tanaka, Katsumi Masuda, Riku Yoshioka, Kirari Masuda, Hiroko Kominami, Kazuhiko Hara (Shizuoka Univ.) EID2022-8 |
To further improve quality of hexagonal boron nitride (h-BN) thin films grown on c-plane sapphire by a low - pressure ch... [more] | EID2022-8 pp.17-20 |
| ED | 2022-12-08 14:10 |
Aichi | 12/8 Nagoya University, 12/9 WINC AICHI | Measurement of work function of hafnium nitride thin films prepared by dc and rf magnetron sputtering Tomoaki Osumi (Kyoto Univ.), Masayoshi Nagao (AIST), Yasuhito Gotoh (Kyoto Univ.) ED2022-53 |
Hafnium nitride(HfN) thin films were prepared by dc and rf magnetron sputtering. The nitrogen compositions of HfN thin f... [more] | ED2022-53 pp.15-17 |
| CPM, ED, LQE | 2022-11-25 13:00 |
Aichi | Winc Aichi (Aichi Industry & Labor Center) (Primary: On-site, Secondary: Online) |
LED device operation of InGaN-based multiwavelength emission structures fabricated by a thermal reflow method Yoshinobu Matsuda, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) ED2022-43 CPM2022-68 LQE2022-76 |
Multiwavelength light emitters composed of InGaN-based microstructures without phosphors impact various fields such as s... [more] | ED2022-43 CPM2022-68 LQE2022-76 pp.85-88 |
| CPM, ED, LQE | 2022-11-25 14:10 |
Aichi | Winc Aichi (Aichi Industry & Labor Center) (Primary: On-site, Secondary: Online) |
Growth and device application of InGaN-based nanocolumn crystals using various crystal planes Jumpei Yamada, Ai Mizuno, Rie Togashi, Ichirou Nomura, Katsumi Kishino (Sophia Univ.) ED2022-46 CPM2022-71 LQE2022-79 |
In this study, we investigated the growth of InGaN-based nanocolumns with various crystal orientations and the fabricati... [more] | ED2022-46 CPM2022-71 LQE2022-79 pp.99-102 |
| CCS | 2022-11-17 16:50 |
Mie | (Primary: On-site, Secondary: Online) |
Heuristic Algorithm-based Design Method of Power Converters including Optimization of Resonant Inductors Wenqi Zhu, Yutaro Komiyama (Chiba Univ.), Xiuqin Wei (ChibaTech), Kien Nguyen, Hiroo Sekiya (Chiba Univ.) CCS2022-51 |
In recent years, the invention of wide bandgap semiconductor devices has made it possible to push the switching frequenc... [more] | CCS2022-51 pp.42-46 |
| SDM, ED, CPM | 2022-05-27 14:40 |
Online | Online | Reactive Sputtering of Nitride Dielectric Film for Silicon Photonics Applications Takaaki Fukushima, Jose A. Piedra Lorenzana, Rui Tsuchiya, Takeshi Hizawa, Yasuhiko Ishikawa (Toyohashi Univ. Tech.) ED2022-10 CPM2022-4 SDM2022-17 |
SiNx possesses a thermo-optic coefficient smaller by approximately one order of magnitude than that of Si, being effecti... [more] | ED2022-10 CPM2022-4 SDM2022-17 pp.13-16 |
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