IEICE Technical Committee Submission System
Conference Schedule
Online Proceedings
[Sign in]
Tech. Rep. Archives
    [Japanese] / [English] 
( Committee/Place/Topics  ) --Press->
 
( Paper Keywords:  /  Column:Title Auth. Affi. Abst. Keyword ) --Press->

All Technical Committee Conferences  (Searched in: All Years)

Search Results: Conference Papers
 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 19 of 19  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, CPM, SDM 2015-05-28
14:15
Aichi Venture Business Laboratory, Toyohashi University of Technology Optical properties of InGaN nanoplates grown by molecular beam epitaxy
Tetsuya Kouno (Shizuoka Univ.), Masaru Sakai (Univ. of Yamanashi), Katsumi Kishino (Sophia UNiv.), Kazuhiko Hara (Shizuoka Univ.) ED2015-19 CPM2015-4 SDM2015-21
We fabricated InGaN nanoplates on top of GaN nanocolumns by radio-frequency plasma-assisted molecular beam epitaxy. The ... [more] ED2015-19 CPM2015-4 SDM2015-21
pp.17-19
CPM 2013-08-02
10:55
Hokkaido   Barrier Properties of Nanocrystalline HfNx Films Applicable to Through Si Via
Masaru Sato, Mayumi B. Takeyama (Kitami Inst. of Tech.), Eiji Aoyagi (Tohoku Univ.), Atsushi Noya (Kitami Inst. of Tech.) CPM2013-51
Through silicon via (TSV) technology is important to realize 3D integration by stacking chips or wafers. We propose conc... [more] CPM2013-51
pp.63-68
US 2013-04-23
13:55
Tokyo The University of Electro-Communications Spontaneous polarization of sonochemically synthesized BaTiO3 nanocrystals
Kyuichi Yasui, Kazumi Kato (AIST) US2013-2
It has been reported that sonochemically synthesized BaTiO3 nanoparticles are mescosrytals. A mesocrystal is an aggregat... [more] US2013-2
pp.5-10
ED 2012-11-20
09:55
Osaka Osaka Univ. Nakanoshima Center Effect of light illumination on electron emission from nanocrystalline silicon based MOS cathodes
Hidetaka Shimawaki (HIT), Yoichiro Neo, Hidenori Mimura (Shizuoka Univ.), Fujio Wakaya, Mikio Takai (Osaka Univ.) ED2012-61
We investigate the effect of laser illumination on electron emission from nc-Si based Metal-oxide-semiconductor (MOS) ca... [more] ED2012-61
pp.37-40
SDM, ED
(Workshop)
2012-06-28
09:15
Okinawa Okinawa Seinen-kaikan Nonvolatile Polymer Memory-cell embedded with Ni Nanocrystals Surrounded by NiO in Polystyrene
Jong-Dae Lee, HyunMin Seung, Chang-Hwan Kim, Jea-Gun Park (Hanyang Uni.)
We investigated the nonvolatile polymer 4F^2 memory-cell embedded with Ni Nanocrystals in surrounded by NiO in polystyre... [more]
QIT
(2nd)
2011-11-21
10:00
Osaka Osaka Univ. Engr. Sci. Sigma Hall (Toyonaka) Single-photon experiments with an ensemble of semiconductor nanocrystals
Makoto Takeuchi, Yoshinari Akutagawa, Takahiro Kuga (The Univ. of Tokyo)
A single photon has useful nature, which are “inseparable” and “indistinguishable”. We are aiming at a fabrication of in... [more]
QIT
(2nd)
2011-11-21
14:40
Osaka Osaka Univ. Engr. Sci. Sigma Hall (Toyonaka) [Poster Presentation] Single-photon experiments with an ensemble of semiconductor nanocrystals
Yoshinari Akutagawa, Makoto Takeuchi, Takahiro Kuga (The Univ. of Tokyo)
We achieved simple single-photon source with semiconductor nanocrystals. We prepared polymer (PMMA) thin film where semi... [more]
ED 2011-10-21
09:00
Aomori   Photoassisted electron emission from nanocrystalline silicon based MOS cathodes
Hidetaka Shimawaki, Yuto Yamazaki (Hachinohe Inst. Technol.), Yoichiro Neo, Hidenori Mimura (Shizuoka Univ.), Fujio Wakaya, Mikio Takai (Osaka Univ.) ED2011-66
Effect of laser illumination on electron emission from nc-Si MOS cathodes using heavy doped p-type Si substrates has bee... [more] ED2011-66
pp.33-36
EID, ITE-IDY, IEE-EDD, IEIJ-SSL 2011-01-28
14:25
Kochi Kochi University of Technology Current-voltage characteristics of top-emission printed EL devices using solution-processed ZnO nanocrystals
Kazuki Itatani, Hayato Kawasaki, Toshihiko Toyama, Hiroaki Okamoto (Osaka Univ.) EID2010-30
Current–voltage (J–V) measurements were performed on the top-emission EL devices with a printed emission lay... [more] EID2010-30
pp.37-40
ED, SDM 2010-02-22
15:15
Okinawa Okinawaken-Seinen-Kaikan Formation of Si Nanocrystals in SiOx Films Induced by Thermal Plasma Jet Millisecond Annealing and Its Application to Floating Gate Memory
Tatsuya Okada (Univ. of the Ryukyus), Seiichiro Higashi, Katsunori Makihara, Yasuo Hiroshige, Seiichi Miyazaki (Hiroshima Univ.) ED2009-201 SDM2009-198
We investigated formation of Si nanocrystals in SiOx (1.0 < x < 1.9) films induced by millisecond annealing using therma... [more] ED2009-201 SDM2009-198
pp.29-33
ITE-IDY, EID, IEIJ-SSL, IEE-EDD 2010-01-28
14:15
Fukuoka Kyusyu Univ. (Chikushi Campus) Solution-processed n-ZnO nanocrystal/p-pentacene heterojunction EL devices
Hayato Kawasaki, Hisazumi Takeuchi, Toshihiko Toyama, Hiroaki Okamoto (Osaka Univ.) EID2009-54
We demonstrate DC-driven hybrid EL devices composed of solution-processed n-ZnO nanocrystal (NC) emission layers and p-p... [more] EID2009-54
pp.29-32
OME 2009-03-13
14:00
Miyagi Tohoku University Fabrication and Characterization of Shape-Controlled C60 Fine Crystals
Akito Masuhara (Tohoku Univ.), Zhenquan Tan (Osaka Univ.), Hitoshi Kasai (Tohoku Univ./JST), Hachiro Nakanishi, Hidetoshi Oikawa (Tohoku Univ.) OME2008-103
We would like to report the first time fabrication method of C60 fine crystals having various shapes by the SPRP (solve... [more] OME2008-103
pp.11-16
OPE 2008-12-19
14:15
Tokyo Kikai-Shinko-Kaikan Bldg. Fabrication and evaluation of Er2SiO5 crystal thin film by spray CVD method
Jun Yoshizawa, Hideo Isshiki, Tadamasa Kimura (UEC) OPE2008-139
The Er2SiO5 nano-structured crystalline film can be expected to be one of key materials for the silicon photonics. The E... [more] OPE2008-139
pp.17-22
ED 2008-08-04
14:15
Shizuoka Sizuoka Univ. Hamamatsu Campus Electron emission from nanocrystalline silicon based MOS chathodes
Hidetaka Shimawaki, Yo Kida (Hachinohe Inst. Tech.), Yoichiro Neo, Hidenori Mimura (Shizuoka Univ.), Katsuhisa Murakami, Fujio Wakaya, Mikio Takai (Osaka Univ.) ED2008-112
Emission characteristics of planar cathodes based on nanocrystalline Si covered with a thin oxide film have been studied... [more] ED2008-112
pp.15-20
SDM, ED 2008-07-10
11:10
Hokkaido Kaderu2・7 Current Transport Characteristics for Organic Nonvolatile Memories
Woo-Sik Nam, Gon-Sub Lee, Sung-Ho Seo, Young-Hwan Oh, Jae-Gun Park (Hanyang Univ.) ED2008-61 SDM2008-80
Recently, organic nonvolatile memory has attracted much interest as a candidate device for next generation nonvolatile m... [more] ED2008-61 SDM2008-80
pp.113-117
ICD 2008-04-18
13:05
Tokyo   [Invited Talk] 15nm Planar Bulk SONOS-type Memory with Double Junstion Tunnel Layers
Ryuji Ohba, Yuichiro Mitani, Naoharu Sugiyama, Shinobu Fujita (Toshiba) ICD2008-11
15nm gate length bulk-planar SONOS-type memory device, which has Si nanocrystal layer lying between double tunnel oxides... [more] ICD2008-11
pp.57-62
SDM, OME 2008-04-12
10:35
Okinawa Okinawa Seinen Kaikan Formation of Polycrystalline Si Thin Films Using Nanocrystalline Ge Nuclei
Chiaki Yoshimoto, Hiromasa Ohmi, Takayoshi Shimura, Hiroaki Kakiuchi, Heiji Watanabe, Kiyoshi Yasutake (Osaka Univ.) SDM2008-18 OME2008-18
Large-grained poly-Si thin films are needed for the fabrication of high-performance thin film transistors (TFTs). We hav... [more] SDM2008-18 OME2008-18
pp.89-94
SDM 2008-03-14
13:05
Tokyo Kikai-Shinko-Kaikan Bldg. 15nm Planar Bulk SONOS-type Memory with Double Junstion Tunnel Layers
Ryuji Ohba, Yuichiro Mitani, Naoharu Sugiyama, Shinobu Fujita (Toshiba) SDM2007-273
15nm gate length bulk-planar SONOS-type memory device, which has Si nanocrystal layer lying between double tunnel oxides... [more] SDM2007-273
pp.1-6
LQE, PN, OPE, OFT, EMT 2006-02-01
15:45
Hyogo Kobe Univ. Application of Si・Er-codoped SiO2 films to optical waveguide amplifiers
Masahiko Sumitomo, Tetsuya Adachi, Keita Murakami, Kazuyuki Moriwaki (Grad. School, Kobe Univ.), Minoru Fujii, Shinji Hayashi (Kobe Univ.), Kei Watanabe (NTT)
Waveguide propagation losses ($\lambda$:1.55$\mu$m) in Si nanocrystals and Er codoped $SiO_2$ films were measured with v... [more] PN2005-83 OFT2005-70 OPE2005-131 LQE2005-146
pp.73-76
 Results 1 - 19 of 19  /   
Choose a download format for default settings. [NEW !!]
Text format pLaTeX format CSV format BibTeX format
Copyright and reproduction : All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)


[Return to Top Page]

[Return to IEICE Web Page]


The Institute of Electronics, Information and Communication Engineers (IEICE), Japan