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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2023-10-13 16:00 |
Miyagi | Niche, Tohoku Univ. | Excimer laser annealing method with the controlled grain size of poly-Si films and TFT characteristics Shu Nishida, Keita Katayama, Daisuke Nakamura (Kyushu Univ.), Tetsuya Goto (Tohoku Univ.), Hiroshi Ikenoue (Kochi Univ. of Technology)  SDM2023-58 |
In recent years, Thin ｆilm ｔransistors have been widely used as switching devices in flat panel displays, such as liquid... [more] | SDM2023-58 pp.27-33 |
| CPM | 2023-07-31 17:00 |
Hokkaido | (Primary: On-site, Secondary: Online) |
[Invited Talk]
Progress and future perspective of room-temperature bonding technologies for heterogeneous integration Eiji Higurashi, Kai Takeuchi (Tohoku Univ.) CPM2023-17 |
In recent years, bonding technology has attracted much attention and has become increasingly important to realize high-p... [more] | CPM2023-17 pp.21-24 |
| SDM, ED, CPM | 2022-05-27 14:40 |
Online | Online | Reactive Sputtering of Nitride Dielectric Film for Silicon Photonics Applications Takaaki Fukushima, Jose A. Piedra Lorenzana, Rui Tsuchiya, Takeshi Hizawa, Yasuhiko Ishikawa (Toyohashi Univ. Tech.) ED2022-10 CPM2022-4 SDM2022-17 |
SiNx possesses a thermo-optic coefficient smaller by approximately one order of magnitude than that of Si, being effecti... [more] | ED2022-10 CPM2022-4 SDM2022-17 pp.13-16 |
| SDM | 2018-10-17 15:20 |
Miyagi | Niche, Tohoku Univ. | Low-Temperature Formation of Ohmic Contact for Si TFT Fabrication by Excimer Laser Doping with Phosphoric Acid Coating Kaname Imokawa (Kyushu Univ), Nozomu Tanaka (Kyushu Univ.), Akira Suwa (Kyushu Univ), Daisuke Nakamura, Taizoh Sadoh (Kyushu Univ.), Tetsuya Goto (New Industry Creation Hatchery Center, Tohoku Univ.), Hiroshi Ikenoue (Kyushu Univ) SDM2018-54 |
There are some issues in printable Si TFT processes. In particlular, formation of ormic contact of silicon TFT requiers ... [more] | SDM2018-54 pp.11-14 |
| ED, SDM | 2018-02-28 17:05 |
Hokkaido | Centennial Hall, Hokkaido Univ. | Low-temperature charge pumping on silicon-on-insulator devices Tokinobu Watanabe (Univ. Toyama), Masahiro Hori, Yukinori Ono (Shizuoka Univ.) ED2017-115 SDM2017-115 |
The charge pumping (CP) was applied to a SOI p-i-n diode at 0.3 – 300 K . We found that The CP current measured below 10... [more] | ED2017-115 SDM2017-115 pp.51-56 |
| MWP | 2017-11-09 14:05 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Packaging of LiNbO3 optical device by low-temperature Au-Au bonding in ambient air Ryo Takigawa (Kyushu Univ.) MWP2017-46 |
As an alternative to conventional AuSn solder bonding, we have developed low-temperature solid-state bonding method of A... [more] | MWP2017-46 pp.7-11 |
| SIP, CAS, MSS, VLD | 2017-06-19 10:40 |
Niigata | Niigata University, Ikarashi Campus | Placement Algorithm for Mixed-Grained Reconfigurable Architecture with Dedicated Carry Chain Koki Honda, Takashi Imagawa, Hiroyuki Ochi (Ritsumeikan Univ.) CAS2017-4 VLD2017-7 SIP2017-28 MSS2017-4 |
This paper proposes a placement algorithm using analytical placement (AP) and low-temperature simulated annealing (SA) f... [more] | CAS2017-4 VLD2017-7 SIP2017-28 MSS2017-4 pp.19-24 |
| ED, SDM | 2016-03-03 16:20 |
Hokkaido | Centennial Hall, Hokkaido Univ. | Low-temperature charge pumping for SiO2/Si interface states Tokinobu Watanabe, Masahiro Hori, Yukinori Ono (Univ. of Toyama) ED2015-125 SDM2015-132 |
The charge pumping (CP) currents are measured at 7 – 300 K with a SOI PIN diode. The CP current is found to exhibi... [more] | ED2015-125 SDM2015-132 pp.23-26 |
| SDM, EID | 2014-12-12 13:30 |
Kyoto | Kyoto University | Low-Temperature CLC Poly-Si TFTs with Sputtered HfO2 Gate Dielectric Layer Tatsuya Meguro, Akito Hara (Tohoku Gakuin Univ.) EID2014-23 SDM2014-118 |
To achieve high performance low-temperature (LT) polycrystalline-silicon (poly-Si) thin-film transistors (TFTs), high-k ... [more] | EID2014-23 SDM2014-118 pp.51-54 |
| SDM, OME | 2014-04-10 15:30 |
Okinawa | Okinawa-Ken-Seinen-Kaikan Bldg. | [Invited Talk]
Al-induced low-temperature crystallization for large-grained Ge(111) thin films on amorphous insulators Kaoru Toko, Takashi Suemasu (Univ. of Tsukuba) SDM2014-6 OME2014-6 |
We introduce Al-induced crystallization (AIC), a unique technique controlling the crystal orientation of polycrystalline... [more] | SDM2014-6 OME2014-6 pp.27-29 |
| SDM | 2013-12-13 13:50 |
Nara | NAIST | Development of Low-Temperature Activation of Boron in Silicon Using Soft X-ray Source Akira Heya, Fumito Kusakabe, Yuki Maruyama, Naoto Matsuo, Kazuhiro Kanda (Univ. of Hyogo), Takashi Noguchi (Univ. of the Ryukyus) SDM2013-127 |
To realize a ultrathin junction with 10nm depth, a novel activation method of B dopant using soft X-ray undulator was ex... [more] | SDM2013-127 pp.67-72 |
| MW | 2013-03-07 15:45 |
Hiroshima | Hiroshima Univ. | [Special Talk]
Compact and Low-Profile LTCC Unbalanced-to-Balanced Filters With Hybrid Resonators Masaya Tamura (Panasonic), Tao Yang, Tatsuo Itoh (Univ. of California at Los Angeles) MW2012-180 |
This report presents two design approaches to realize unbalanced-balanced filters with special configuration called hybr... [more] | MW2012-180 pp.115-120 |
| SDM | 2011-12-16 16:00 |
Nara | NAIST | Development of Low-Temperature Crystallization Method of Thin Film Semiconductor Using Soft X-ray Source Akira Heya, Yuki Nonomura, Shota Kino, Naoto Matsuo (Univ. Hyogo), Sho Amano (LASTI Univ. Hyogo), Shuji Miyamoto, Kazuhiro Kanda, Takayasu Mochizuki (Univ. Hyogo), Kaoru Toko, Taizoh Sadoh, Masanobu Miyao (Kyushu Univ.) SDM2011-145 |
It is necessary two processes (crystal-nucleus formation and crystal grain growth) for crystallization. In general, the ... [more] | SDM2011-145 pp.71-76 |
| EE, CPM | 2011-02-10 14:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Development of La(Ni,Co,Fe)O3 as cathode materials for solid oxide fuel cell Hiroaki Taguchi, Takeshi Komatsu, Reiichi Chiba, Kimitaka Watanabe, Himeko Orui, Katsuya Hayashi (NTT) EE2010-46 CPM2010-140 |
We aim to develop Solid Oxide Fuel Cells (SOFCs) as highly-efficient power generation systems. One of current problems w... [more] | EE2010-46 CPM2010-140 pp.25-29 |
| OME, SDM | 2009-04-24 16:15 |
Saga | AIST Kyushu-center | Low-Temperature Growth of Silicon-germanium on Glass by Aluminum Induced Layer Exchange Masashi Kurosawa, Naoyuki Kawabata, Taizoh Sadoh, Masanobu Miyao (Kyushu Univ.) SDM2009-5 OME2009-5 |
Low-temperature (<550$^o$C) Al-induced crystallization (AIC) of amorphous Si$_{1-x}$Ge$_x$ ($x$=0-1) on glass substrate ... [more] | SDM2009-5 OME2009-5 pp.19-23 |
| LQE, ED, CPM | 2008-11-27 10:55 |
Aichi | Nagoya Institute of Technology | Growth and characterization of nonpolar and semipolar (Al,In,Ga)N films on ZnO substrates Atsushi Kobayashi, Kohei Ueno, Kazuma Shimomoto, Jitsuo Ohta, Hiroshi Fujioka, Masaharu Oshima (Univ. of Tokyo), Hidetaka Amanai, Satoru Nagao, Hideyoshi Horie (Mitsubishi Chemical Group Science and Technology Research Center) ED2008-155 CPM2008-104 LQE2008-99 |
We have succeeded in epitaxial growth of high-quality nonpolar and semipolar (Al,In,Ga)N films on ZnO substrates using r... [more] | ED2008-155 CPM2008-104 LQE2008-99 pp.17-20 |
| SDM, ED | 2008-07-09 11:40 |
Hokkaido | Kaderu２・７ | [Invited Talk]
AlGaN/GaN-based Electron Devices with Low-temperature GaN Cap Layer Tadayoshi Deguchi (New Japan Radio), Takashi Egawa (Nagoya Inst. of Tech.) ED2008-41 SDM2008-60 |
We review our studies on AlGaN/GaN-based electron devices with a low-temperature GaN (LT-GaN) cap layer, such as heteros... [more] | ED2008-41 SDM2008-60 pp.9-14 |
| SDM, OME | 2008-04-12 11:25 |
Okinawa | Okinawa Seinen Kaikan | Low-temperature formation of poly-Ge on insulator by metal-induced lateral crystallization Takashi Hagihara, Kaoru Toko, Taizoh Sadoh (Kyushu Univ.) SDM2008-20 OME2008-20 |
Metal-induced lateral crystallization (MILC) of Ge was investigated to realize extremely low-temperature (≦250℃) formati... [more] | SDM2008-20 OME2008-20 pp.101-106 |
| CPM, ICD | 2008-01-18 15:45 |
Tokyo | Kikai-Shinko-Kaikan Bldg | A method of Ultra-fine Pad Interconnection using Electroless Deposition Tokihiko Yokoshima, Yasuhiro Yamaji, Yuichiro Tamura, Katsuya Kikuchi, Hiroshi Nakagawa, Masahiro Aoyagi (AIST) CPM2007-147 ICD2007-158 |
Decrease in bonding temperature and bonding pressure are key challenges for higher interconnection-density packages in r... [more] | CPM2007-147 ICD2007-158 pp.111-116 |
| CPM | 2007-11-17 15:05 |
Niigata | Nagaoka University of Technology | MBE growth and low-temperature thermal annealing of ferromagnetic semiconductor (Ga,Mn)As/Zn-doped-GaAs superlattice structures Hisayuki Nakagawa, Joel T. Asubar, Yoshio Jinbo, Naotaka Uchitomi (Nagaoka Univ. of Tech.) CPM2007-126 |
We prepared the superlattice (SL) structure of ferromagnetic semiconductor (Ga,Mn)As and p-type GaAs spacer layer by MBE... [more] | CPM2007-126 pp.109-113 |
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