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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM, OME | 2023-04-22 13:35 |
Okinawa | Okinawaken Seinen Kaikan (Primary: On-site, Secondary: Online) |
[Invited Talk]
Crystallization technology of Si thin film by excimer laser annealing
-- Hoping to become some lesson from the past -- Hiroyuki Kuriyama (TTE)  SDM2023-13 OME2023-13 |
Si thin film crystallization technology using an excimer laser was first put into practical use in 1996 as a core techno... [more] | SDM2023-13 OME2023-13 pp.48-51 |
| SDM, EID, ITE-IDY [detail] | 2019-12-24 16:00 |
Nara | NAIST | Stable Growth of (100)-Oriented Low Angle Grain Boundary Silicon Thin Films Extending to the length of 3000 μm by a Continuous-Wave Laser Lateral Crystallization Muhammad Arif Razali, Nobuo Sasaki, Yasuaki Ishikawa, Yukiharu Uraoka (NAIST) |
The continuous wave laser lateral crystallization of amorphous-Si on quartz produces a {100}-oriented grain-boundary fre... [more] | |
| OME, SDM | 2015-04-30 10:40 |
Okinawa | Oh-hama Nobumoto Memorial Hall | Lateral solid-phase crystallization of a-GeSn on insulator for next generation flexible electronics Ryo Matsumura (Kyushu Univ./ JSPS), Hironori Chikita, Yuki Kai, Masaya Sasaki, Taizoh Sadoh, Hiroshi Ikenoue, Masanobu Miyao (Kyushu Univ.) SDM2015-10 OME2015-10 |
In order to realize next generation flexible electronics, high carrier mobility materials, such as GeSn, has to be cryst... [more] | SDM2015-10 OME2015-10 pp.39-40 |
| OME, SDM | 2015-04-30 13:25 |
Okinawa | Oh-hama Nobumoto Memorial Hall | Temperature Analysis of Si Films during Blue Multi-Laser Diode Annealing Tatsuya Okada, Seita Kamimura, Takashi Noguchi (Univ. Ryukyus) SDM2015-14 OME2015-14 |
We have reported that Blue Multi-Laser Diode Annealing (BLDA) is effective to crystallize Si films for next generation S... [more] | SDM2015-14 OME2015-14 pp.53-55 |
| SDM, EID | 2014-12-12 13:30 |
Kyoto | Kyoto University | Low-Temperature CLC Poly-Si TFTs with Sputtered HfO2 Gate Dielectric Layer Tatsuya Meguro, Akito Hara (Tohoku Gakuin Univ.) EID2014-23 SDM2014-118 |
To achieve high performance low-temperature (LT) polycrystalline-silicon (poly-Si) thin-film transistors (TFTs), high-k ... [more] | EID2014-23 SDM2014-118 pp.51-54 |
| SDM, EID | 2014-12-12 14:15 |
Kyoto | Kyoto University | Crystallization of Germanium Film with (111) Orientation on Amorphous Substrate by Laser Annealing Toru Takao, Masahiro Horita, Yasuaki Ishikawa, Yukiharu Uraoka (NAIST) EID2014-26 SDM2014-121 |
Single-grain Germanium (Ge) on amorphous substrate is required to realize the flexible system on panel display. Stripe-p... [more] | EID2014-26 SDM2014-121 pp.67-71 |
| SDM | 2014-06-19 16:55 |
Aichi | VBL, Nagoya Univ. | [Invited Lecture]
Low temperature poly-crystallization of group-IV semiconductor films on insulators
-- use of low-melting-point Sn -- Masashi Kurosawa (Nagoya Univ./JSPS), Noriyuki Taoka (Nagoya Univ.), Hiroshi Ikenoue (Kyushu Univ.), Wakana Takeuchi, Mitsuo Sakashita, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2014-60 |
Low temperature growth of Ge1－xSnx on insulators can provide much wider range of options for device fabrication of 3D-LS... [more] | SDM2014-60 pp.91-95 |
| SDM, OME | 2014-04-11 10:50 |
Okinawa | Okinawa-Ken-Seinen-Kaikan Bldg. | Fabrication of poly-Si TFT with low-temperature process using BLDA Kiyoharu Shimoda, Kouya Sugihara, Kimihiko Imura, Tatsuya Okada, Takashi Noguchi (Univ. of the Ryukyus) SDM2014-14 OME2014-14 |
Poly-Si TFTs by low cost fabrication process are required on glass as well as on flexible panel. Top-gate-type TFT witho... [more] | SDM2014-14 OME2014-14 pp.59-61 |
| SDM, OME | 2014-04-11 11:10 |
Okinawa | Okinawa-Ken-Seinen-Kaikan Bldg. | Photoconductivity of Si Films on glass after Blue Multi-Laser Diode Annealing Charith Jayanada Koswaththage*, Satoshi Chinen, Kouya Sugihara, Tatsuya Okada, Takashi Noguchi (Uni. of the Ryukyus) SDM2014-15 OME2014-15 |
Photoconductivity of BLDA applied Si film was examined for the aim of multi-functional optical sensor application of the... [more] | SDM2014-15 OME2014-15 pp.63-65 |
| SDM | 2013-12-13 11:40 |
Nara | NAIST | Low-Temprature CLC Poly-Si TFTs with Sputtered Al2O3 Gate Dielectric Layer Tatsuya Meguro, Akito Hara (Tohoku Gakuin Univ.) SDM2013-124 |
A high-k gate dielectric is a technology booster for enhancing the performance of low-temperature (LT) polycrystalline-s... [more] | SDM2013-124 pp.49-53 |
| SDM, ED (Workshop) |
2012-06-27 17:15 |
Okinawa | Okinawa Seinen-kaikan | Crystallization of a-Si Films with Smooth Surface Using Blue-Multi-Laser-Diode-Annealing Tatsuya Okada, Jean de Dieu Mugiraneza, Katsuya Shirai, Takuma Nishinohara, Tomoyuki Mukae, Keisuke Yagi, Takashi Noguchi (Univ. Ryukyus) |
Crystallization of 50-nm-thick a-Si was achieved with smooth surface using Blue Multi-Laser Diode Annealing (BLDA). The ... [more] | |
| SDM, OME | 2012-04-27 15:10 |
Okinawa | Okinawa-Ken-Seinen-Kaikan Bldg. | [Invited Talk]
Growth of Silicon and Silicon-Germanium Thin Films on Glass Substrates by Continuous-Wave Laser Lateral Crystallization Kuninori Kitahara (Shimane Univ.), Akito Hara (Tohoku Gakuin Univ.) SDM2012-5 OME2012-5 |
Flow-shaped growth of Si and SiGe thin films on glass substrate was achieved by continuous wave laser lateral crystalliz... [more] | SDM2012-5 OME2012-5 pp.21-26 |
| SDM, OME | 2012-04-27 15:40 |
Okinawa | Okinawa-Ken-Seinen-Kaikan Bldg. | [Invited Talk]
Formation of Biaxially-Oriented Poly-Si Thin Films by Double-Line Beam Continuous-Wave Laser Lateral Crystallization for High-Performance TFT Shin-Ichiro Kuroki (Tohoku Univ.) SDM2012-6 OME2012-6 |
Poly-Si thin films with large crystal grains of 20×2μm2 were fabricated by continuous-wave laser lateral crystallization... [more] | SDM2012-6 OME2012-6 pp.27-32 |
| SDM, OME | 2012-04-27 16:30 |
Okinawa | Okinawa-Ken-Seinen-Kaikan Bldg. | Crystallization of Si Thin Film on Poly-Imide Substrate by Semiconductor Blue Multi-Laser Diode Annealing Tatsuya Okada, Jean de Dieu Mugiraneza, Katsuya Shirai, Toshiharu Suzuki, Takashi Noguchi (Univ. Ryukyus), Hideki Matsushima, Takao Hashimoto, Yoshiaki Ogino, Eiji Sahota (Hitachi CP) SDM2012-8 OME2012-8 |
Crystallization of a-Si films on polyimide substrate was achieved using Blue Multi-Laser Diode Annealing. Surface roughn... [more] | SDM2012-8 OME2012-8 pp.37-39 |
| SDM | 2011-12-16 15:20 |
Nara | NAIST | Development of Process Simulators for Laser Crystallization
-- Development of 2-Dimensional and 3-Dimentional Simulators -- Mutsumi Kimura, Kuniaki Matsuki, Ryusuke Saito, Shuji Tsukamoto (Ryukoku Univ.) SDM2011-143 |
We are developing process simulators for laser crystallization. We have developed 2-dimensional and 3-dimentional simula... [more] | SDM2011-143 pp.59-64 |
| SDM | 2011-07-04 16:40 |
Aichi | VBL, Nagoya Univ. | Simultaneous Crystallization of Double-Layered Si Thin Films and Fabciration of Thin Film Devices Masahiro Horita, Koji Yamasaki, Emi Machida, Yasuaki Ishikawa, Yukiharu Uraoka (NAIST) SDM2011-68 |
We investigate simultaneous crystallization of double-layered silicon thin films on glass substrates by means of green l... [more] | SDM2011-68 pp.103-108 |
| SDM | 2010-12-17 16:25 |
Kyoto | Kyoto Univ. (Katsura) | Evaluation of two layers simultaneous crystallized LTPS-TFT memory by the laser irradiation from the back. Masahiro Matsue, Kazunori Ichikawa, Hiroshi Akamatsu (KCCT), Koji Yamasaki, Masahiro Horita, Yukiharu Uraoka (NAIST) SDM2010-200 |
We have reported that the stacked a-Si layers were simultaneous crystallized by the green laser irradiation. In this stu... [more] | SDM2010-200 pp.83-86 |
| SDM | 2010-10-22 11:10 |
Miyagi | Tohoku University | Evaluation of Internal Strain and Electron Mobility in poly-Si TFTs Formed by CW Laser Lateral Crystallization Shuntaro Fujii, Shin-Ichiro Kuroki, Koji Kotani (Tohoku Univ.) SDM2010-162 |
Tensile strain is induced in the polycrystalline silicon (poly-Si) films formed by CW laser lateral crystallization (CLC... [more] | SDM2010-162 pp.41-44 |
| SDM | 2010-10-22 11:40 |
Miyagi | Tohoku University | Fabrication of Highly Crystalline-Oriented Poly-Si Thin Films by using Double -Line-Beam CLC for High Performance LPTS-TFT Shin-Ichiro Kuroki, Yuya Kawasaki, Shuntaro Fujii, Koji Kotani (Tohoku Univ.), Takashi Ito (Tokyo Inst. of Tech.) SDM2010-163 |
Highly bi-axially oriented poly-Si thin films with very long grains were successfully fabricated on quartz substrates by... [more] | SDM2010-163 pp.45-48 |
| ED, SDM | 2010-07-02 10:00 |
Tokyo | Tokyo Inst. of Tech. Ookayama Campus | Acivation behaviour for doped Si films after laser or furnace annealing Takashi Noguchi, Toshiharu Suzuki (Univ. of Ryukyus) ED2010-85 SDM2010-86 |
After excimer laser annealing (ELA) for heavily boron- or phosphorous-doped Si films, the relation between the conductiv... [more] | ED2010-85 SDM2010-86 pp.149-153 |
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