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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2013-06-18 09:40 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Clarification of oxidation mechanisms in Al2O3/Ge structure and impact of interface reactions on interface properties Shigehisa Shibayama, Kimihiko Kato, Mitsuo Sakashita, Wakana Takeuchi, Noriyuki Taoka, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.)  SDM2013-46 |
Currently, it is reported that the Ge surface oxidation through the thin Al2O3 layer using oxygen plasma (post plasma ox... [more] | SDM2013-46 pp.13-18 |
| SDM | 2013-06-18 11:15 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Impact of metal gate electrodes on electrical properties of InGaAs MOS gate stacks Chih-Yu Chang, Masafumi Yokoyama, Sang-Hyeon Kim (Univ. of Tokyo), Osamu Ichikawa, Takenori Osada, Masahiko Hata (Sumitomo Chemical), Mitsuru Takenaka, Shinichi Takagi (Univ. of Tokyo) SDM2013-50 |
Electrical properties of Al2O3 and HfO2/InGaAs metal-oxide-semiconductor (MOS) capacitors with Al, Au and Pd gate electr... [more] | SDM2013-50 pp.33-37 |
| SDM | 2013-06-18 15:10 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Lecture]
High performance of SiC-MOS devices by POCl3 annealing Hiroshi Yano, Tomoaki Hatayama, Takashi Fuyuki (NAIST) SDM2013-58 |
Effects of phosphorus incorporation by POCl3 annealing on electrical properties of 4H-SiC MOS devices were investigated.... [more] | SDM2013-58 pp.71-76 |
| SDM | 2013-06-18 17:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Lecture]
4H-SiC MOS interface states studied by electron spin resonance spectroscopy T. Umeda (Univ. of Tsukuba), M. Okamoto, R. Kosugi (AIST), R. Arai, Y. Satoh (Univ. of Tsukuba), S. Harada, Hajime Okumura (AIST), T. Makino, Takeshi Ohshima (JAEA) SDM2013-64 |
Normally-off 4H-SiC MOSFETs (Metal-Oxide-Semiconductor Field Effect Transistors) are promising devices for power electro... [more] | SDM2013-64 pp.101-105 |
| SDM | 2012-06-21 10:55 |
Aichi | VBL, Nagoya Univ. | Clarification of Interfacial Reaction Mechanism in O2 Annealing or O radical Process for Al2O3/Ge Structure Shigehisa Shibayama, Kimihiko Kato, Mitsuo Sakashita, Wakana Takeuchi, Noriyuki Taoka, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2012-48 |
To realize a high performance Ge MOSFET, it is quite important to achieve simultaneously the low interface state density... [more] | SDM2012-48 pp.27-32 |
| ED, SDM, CPM | 2012-05-18 09:25 |
Aichi | VBL, Toyohashi Univ. of Technol. | Interface characterization of GaN-based MOS heterostructures employing ICP-etched AlGaN surfaces Zenji Yatabe, Yujin Hori, Sungsik Kim, Tamotsu Hashizume (Hokkaido Univ.) ED2012-27 CPM2012-11 SDM2012-29 |
Our aim is to investigate the effects of dry etching of AlGaN surface on interface properties of GaN-based MOS structure... [more] | ED2012-27 CPM2012-11 SDM2012-29 pp.49-52 |
| LQE, ED, CPM | 2011-11-17 13:20 |
Kyoto | Katsura Hall，Kyoto Univ. | Interface characterization of MOS structures fabricated on dry-etched GaN and AlGaN Sungsik Kim, Yujin Hori, Zenji Yatabe, Tamotsu Hashizume (Hokkaido Univ.) ED2011-78 CPM2011-127 LQE2011-101 |
We have investigated impacts of dry etching of GaN and AlGaN surfaces on interface properties of GaN-based MOS structure... [more] | ED2011-78 CPM2011-127 LQE2011-101 pp.25-28 |
| CPM | 2011-10-27 09:55 |
Fukui | Fukui Univ. | Preparation of SiC MOS structure using SiO2 Layer deposited by Thermal Decomposition of TEOS Mitsunori Hemmi, Yuya Iguchi, Takashi Sakai, Akihiko Sugita, Tomohiko Yamakami, Rinpei Hayashibe, Kiichi Kamimura (Shinshu Univ.) CPM2011-119 |
A oxide layer was deposited on a SiC surface by thermal chemical vapor deposition as a source material TEOS. After the d... [more] | CPM2011-119 pp.51-54 |
| CPM | 2011-08-10 13:50 |
Aomori | Direct Nitridation of SiC Surface and Characterization of Nitride/SiC Interface Takashi Sakai, Mitsunori Hemmi, Yusuke Murata, Shinichiro Suzuki, Tomohiko Yamakami, Rinpei Hayashibe, Kiichi Kamimura (Shinshu Univ.) CPM2011-58 |
A nitride layer was formed on a SiC surface by direct nitridation method to use an interfacial layer of the SiC MIS stru... [more] | CPM2011-58 pp.11-14 |
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| CPM | 2011-08-10 16:35 |
Aomori | Evaluation of interface state density of Ge-MIS structure by combination of conductance technique at low temperature and room temperature Takuro Iwasaki, Shinya Sato, Soitiro Suzuki, Toshiro Ono (Hirosaki Univ.), Yukio Fukuda (Tokyo Univ. of Science, Suwa,), Hiroshi Okamoto (Hirosaki Univ.) CPM2011-64 |
Ge-MIS structures have attracted the attention for next generation device, which may take the place of Si-MOS devices. H... [more] | CPM2011-64 pp.43-46 |
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| SDM | 2011-07-04 10:00 |
Aichi | VBL, Nagoya Univ. | Defect analysis of HfO2/In0.53Ga0.47As interface using capacitance-voltage and conductance methods Darius Zade, Ryuji Hosoi, Ahmet Parhat, Kuniyuki Kakushima, Kazuo Tsutsui, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, Takeo Hattori, Hiroshi Iwai (Tokyo Inst. of Tech.) SDM2011-53 |
The changes in electrical characteristics of W/HfO2or La2O3/ In0.53Ga0.47As capacitors by wet chemical treatment before ... [more] | SDM2011-53 pp.17-22 |
| SDM | 2011-07-04 11:20 |
Aichi | VBL, Nagoya Univ. | Photoluminescence and interface properties of Si nanolayers and nanowires Yoko Sakurai, Kenji Ohmori, Keisaku Yamada (Univ. of Tsukuba), Kuniyuki Kakushima, Hiroshi Iwai (Tokyo Insti. Tech.), Kenji Shiraishi, Shintaro Nomura (Univ. of Tsukuba) SDM2011-56 |
Photoluminescence (PL) and interface properties of Si nanolayers and nanowires have been investigated. We have observed ... [more] | SDM2011-56 pp.35-39 |
| SDM | 2011-07-04 11:40 |
Aichi | VBL, Nagoya Univ. | Evaluation of Light Induced Damages in Plasma Process on Electrical Properties of Al2O3/Ge Gate Stack Structure Kusuman Dari, Wakana Takeuchi, Kimihiko Kato, Shigehisa Shibayama, Mitsuo Sakashita, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2011-57 |
We have investigated the effect of light induced damages on the electrical properties of the Al2O3/Ge gate stack structu... [more] | SDM2011-57 pp.41-46 |
| SDM | 2011-07-04 13:20 |
Aichi | VBL, Nagoya Univ. | Effect of O2 Annealing for Al2O3/Ge Structure on Interfacial Properties Shigehisa Shibayama, Kimihiko Kato, Mitsuo Sakashita, Wakana Takeuchi, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2011-59 |
For realizing the next generation complementary metal-oxide-semiconductor field-effect-transistors (CMOSFETs), High-k/Ge... [more] | SDM2011-59 pp.51-56 |
| SDM | 2011-07-04 13:40 |
Aichi | VBL, Nagoya Univ. | Control of Interfacial Reactions in Pr Oxide/Ge Structures Based on Valence State of Pr Kimihiko Kato, Mitsuo Sakashita, Wakana Takeuchi, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2011-60 |
We have investigated the electrical properties and chemical bonding state of praseodymium (Pr) oxide/Ge and Pr oxide/Pr ... [more] | SDM2011-60 pp.57-62 |
| CPM | 2010-10-29 09:25 |
Nagano | Estimation of nitride layer thickness and characterization of the interface between SiC and nitride layer prepared by direct nitridation Shinichiro Suzuki, Yusuke Murata, Mitsunori Henmi, Tomohiko Yamakami, Rinpei Hayashibe, Kiichi Kamimura (Shinshu Univ.) CPM2010-100 |
A nitride layer was formed on a SiC surface by direct nitridation in N$_{2}$ or NH$_{3}$. The surface was characterized ... [more] | CPM2010-100 pp.47-50 |
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| CPM | 2010-10-29 09:50 |
Nagano | Estimation of interface state density at nitride/SiC interface using current-voltage characteristics of MIS Schottky contact Yusuke Murata, Shinichiro Suzuki, Shohei Kobayashi, Tomohiko Yamakami, Rinpei Hayashibe, Kiichi Kamimura (Shinshu Univ.) CPM2010-101 |
The nitride film was formed by direct nitridation with NH$_3$ on n type 4H-SiC to form an MIS Schottky diode. Ideality f... [more] | CPM2010-101 pp.51-54 |
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| OME | 2010-01-12 16:05 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Analysis of Trap-State Density at Pentacene/Gate Insulator Interface Using In-Situ Field-Effect Thermally-Stimulated-Current Method Takahiro Fujii (Chiba Univ.), Hiroyuki Matsui (AIST), Tatsuo Hasegawa (AIST/Univ. of Tokyo), Shigekazu Kuniyoshi, Masatoshi Sakai, Kazuhiro Kudo, Masakazu Nakamura (Chiba Univ.) OME2009-76 |
Trap states at organic/gate insulator interfaces in organic thin-film transistors (OTFTs) greatly influence on the chara... [more] | OME2009-76 pp.51-56 |
| SDM | 2009-12-04 09:40 |
Nara | NAIST | Reduction of interface state density in 4H-SiC MOS interface by incorporation of phosphorus atoms Dai Okamoto, Hiroshi Yano, Kenji Hirata, Tomoaki Hatayama, Takashi Fuyuki (NAIST) SDM2009-152 |
A change in the interface state density in 4H-SiC metal-oxide-semiconductor (MOS) structures by incorporation of various... [more] | SDM2009-152 pp.5-10 |
| SDM | 2009-12-04 15:50 |
Nara | NAIST | Formation of High Quality SiO2 and SiO2/Si Interface using Thermal Plasma Jet Induced Millisecond Annealing and Post-Metallization Annealing Yasuo Hiroshige, Seiichiro Higashi, Yusuke Miyazaki, Kazuya Matsumoto, Seiichi Miyazaki (Hiroshima Univ.) SDM2009-166 |
Thermal plasma jet (TPJ) induced millisecond annealing has been performed to SiO2 films deposited at 300C by remote plas... [more] | SDM2009-166 pp.79-82 |
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