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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| WPT, EMCJ, EMD (Joint) |
2023-07-21 14:10 |
Tokyo | (Primary: On-site, Secondary: Online) |
The reason why magnetic pulse welding of Al/Cu sheets in close contact can be performed without collision. Tomokatsu Aizawa (Metropolitan College of Technology)  EMD2023-10 |
We have already reported experimental results of magnetic pulse welding of Al/Cu sheets in close contact without collisi... [more] | EMD2023-10 pp.1-6 |
| SDM | 2023-06-26 11:30 |
Hiroshima | Hiroshima Univ. (Res. Inst. of Nanodevices) | Characterization of ultrathin SiO2/SiC interfaces by using self-assembled monolayers Ryo Okuhira (Kwansei Gakuin Univ.), Takamasa Kawanago (Tokyo Tech), Takuji Hosoi (Kwansei Gakuin Univ.) SDM2023-29 |
We have successfully evaluated ultrathin SiO2/4H-SiC(0001) interface property by stacking self-assembled monolayer (SAM)... [more] | SDM2023-29 pp.7-10 |
| SDM | 2022-06-21 13:00 |
Aichi | Nagoya Univ. VBL3F | [Invited Talk]
Superiority of counter-doped MOSFET from the viewpoint of oxide/4H-SiC interface property Shigehisa Shibayama, Takuma Doi, Mitsuo Sakashita, Noriyuki Taoka (Nagoya Univ.), Mitsuaki Shimizu (AIST), Osamu Nakatsuka (Nagoya Univ.) SDM2022-24 |
To decrease channel resistance of 4H-SiC power MOSFET, there are two important approaches; (1) reducing the interface st... [more] | SDM2022-24 pp.1-4 |
| SDM | 2021-11-12 09:30 |
Online | Online | [Invited Talk]
Formation of high-quality SiC/SiO2 interfaces by suppressing carbon defects Takuma Kobayashi (Kyoto Univ./Tokyo Tech), Takafumi Okuda, Keita Tachiki, Koji Ito (Kyoto Univ.), Yu-ichiro Matsushita (Tokyo Tech), Tsunenobu Kimoto (Kyoto Univ.) SDM2021-60 |
SiC MOSFETs are promising in high-voltage power applications. However, the performance of MOSFETs has been limited by th... [more] | SDM2021-60 pp.38-42 |
| SDM | 2021-06-22 13:50 |
Online | Online | [Memorial Lecture]
Operation mechanism of Si/HZO ferroelectric FETs
-- Role of MOS (MFS) interface -- Kasidit Toprasertpong, Tsung-En Lee, Zaoyang Lin, Kento Tahara, Kouhei Watanabe, Mitsuru Takenaka, Shinichi Takagi (Univ. Tokyo) SDM2021-23 |
In this talk, we will introduce our findings on the mechanisms at the MFIS interface and their impacts on the memory cha... [more] | SDM2021-23 pp.7-12 |
| SDM | 2018-06-25 11:40 |
Aichi | Nagoya Univ. VBL3F | Control of SiO2/GaN Interface for High-performance GaN MOSFET Tauji Hosoi, Takahiro Yamada, Mikito Nozaki (Osaka Univ.), Tokio Takahashi, Hisashi Yamada, Mitsuaki Shimizu (AIST), Akitaka Yoshigoe (JAEA), Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) SDM2018-18 |
A high-quality gate insulator together with low interface states is indispensable for GaN-based power MOSFETs. We have r... [more] | SDM2018-18 pp.11-14 |
| SDM | 2018-06-25 15:35 |
Aichi | Nagoya Univ. VBL3F | Modification of Al2O3/SiC interface by oxygen radical irradiation Takuma Doi (Nagoya Univ.), Wakana Takeuchi (AIT), Mitsuo Sakashita (Nagoya Univ.), Noriyuki Taoka (AIST), Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2018-23 |
To realizing power-saving SiC MOSFET, it is needed to reduce the density of interface traps (Dit) between insulator and ... [more] | SDM2018-23 pp.33-36 |
| ED, SDM | 2018-02-28 17:05 |
Hokkaido | Centennial Hall, Hokkaido Univ. | Low-temperature charge pumping on silicon-on-insulator devices Tokinobu Watanabe (Univ. Toyama), Masahiro Hori, Yukinori Ono (Shizuoka Univ.) ED2017-115 SDM2017-115 |
The charge pumping (CP) was applied to a SOI p-i-n diode at 0.3 – 300 K . We found that The CP current measured below 10... [more] | ED2017-115 SDM2017-115 pp.51-56 |
| MW, ED | 2017-01-27 09:55 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Dependence of Electron Mobility on Deposition Temperature and H2 Annealing in MOSFETs with HfO2/Al2O3/InGaAs Gate Stacks Kazuto Ohsawa, Shinji Noguchi, Seiko Netsu, Nobukazu Kise, Yasuyuki Miyamoto (Tokyo Tech) ED2016-103 MW2016-179 |
III–V compound semiconductors are promising materials for future n-type MOSFET channels because of their high elec... [more] | ED2016-103 MW2016-179 pp.35-40 |
| SDM | 2016-11-11 13:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Detection and Analysis of Single MOS Interface Traps Using the Charge Pumping Method
-- Toward Advanced Atomistic Trap Physics -- Toshiaki Tsuchiya (Shimane Univ.) SDM2016-86 |
We have developed effective procedures to detect and characterize single MOS interface traps by the charge pumping (CP) ... [more] | SDM2016-86 pp.43-47 |
| SDM | 2016-06-29 13:30 |
Tokyo | Campus Innovation Center Tokyo | A resistive switching device based on breakdown and local anodic oxidation Kuniyuki Kakushima, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai (Tokyo Tech.) SDM2016-38 |
We propose a resistive switching device with CeOx and SiO2 stacked layers on a Si substrate. Breakdown spots are created... [more] | SDM2016-38 pp.33-36 |
| ED, SDM | 2016-03-03 16:20 |
Hokkaido | Centennial Hall, Hokkaido Univ. | Low-temperature charge pumping for SiO2/Si interface states Tokinobu Watanabe, Masahiro Hori, Yukinori Ono (Univ. of Toyama) ED2015-125 SDM2015-132 |
The charge pumping (CP) currents are measured at 7 – 300 K with a SOI PIN diode. The CP current is found to exhibi... [more] | ED2015-125 SDM2015-132 pp.23-26 |
| CPM | 2015-08-11 11:20 |
Aomori | Evaluation of interface and near-interface traps in Al-germanate/Ge structure fabricated by Radical-Enhanced ALD Hidefumi Narita (Hirosaki Univ.), Daichi Yamada, Yukio Fukuda (Tokyo Univ. of Science, Suwa), Yosuke Kanuka, Hiroshi Okamoto (Hirosaki Univ.) CPM2015-44 |
A Ge-MIS structure has attracted the attention for the candidate of a next generation device. However, improvement of th... [more] | CPM2015-44 pp.67-70 |
|
| SDM | 2015-06-19 09:30 |
Aichi | VBL, Nagoya Univ. | [Invited Lecture]
Interface states characterization of Al2O3/AlGaN/GaN structures Zenji Yatabe, Tamotsu Hashizume (Hokkaido Univ.) SDM2015-38 |
To characterize interface properties of Al2O3-insulated gates on AlGaN/GaN structures with and without (w/o) ICP etching... [more] | SDM2015-38 pp.1-4 |
| SDM | 2015-06-19 10:10 |
Aichi | VBL, Nagoya Univ. | [Invited Lecture]
Al2O3/Ga2O3 interface structure and its surface orientation dependence Takafumi Kamimura, Daivasigamani Krishnamurthy (NICT), Akito Kuramata, Shigenobu Yamakoshi (Tamura Corp.), Masataka Higashiwaki (NICT) SDM2015-40 |
The interface state densities (Dit) of Al2O3/n-Ga2O3 (010) and Al2O3/n-Ga2O3 ("2" ̅01) were evaluated with Hi-Lo C... [more] | SDM2015-40 pp.11-16 |
| SDM | 2015-06-19 11:30 |
Aichi | VBL, Nagoya Univ. | [Invited Lecture]
Effect of oxynitridation annealing on defect properties at SiO2/SiC MOS interface Wakana Takeuchi (Nagoya Univ.), Kensaku Yamamoto (DENSO CORP.), Mitsuo Sakashita (Nagoya Univ.), Takashi Kanemura (DENSO CORP.), Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2015-43 |
We have investigated the effect of NO-annealing for SiO2/4H-SiC interface properties. The electrical properties of the N... [more] | SDM2015-43 pp.27-30 |
| SDM | 2015-06-19 13:00 |
Aichi | VBL, Nagoya Univ. | First-Principles Study on Hydrogen Annealing Effect in Si/SiO2 Interface by Thermal Oxidation Shingo Kawachi, Hiroki Shirakawa, Masaaki Araidai (Nagoya Univ.), Hiroyuki Kageshima (Shimane Univ.), Tetsuo Endoh (Tohoku Univ.), Kenji Shiraishi (Nagoya Univ.) SDM2015-45 |
Why is high-quality Si/SiO2 interface readily fabricated by simple thermal oxidation? Even though the question is closel... [more] | SDM2015-45 pp.37-40 |
| SDM | 2014-06-19 10:30 |
Aichi | VBL, Nagoya Univ. | Stability of vacancy defect around metal/Ge interfaces; first-principles study Shogo Sasaki, Takashi Nakayama (Chiba Univ.) SDM2014-46 |
It is well known that Ge has high density of vacancy defects compared to Si. Vacancy defects often change electronic pro... [more] | SDM2014-46 pp.17-20 |
| SDM | 2013-12-13 17:20 |
Nara | NAIST | Characterization of interface states in SiC MOS structures with various crystal faces by conductance method Seiya Nakazawa, Yuichiro Nanen, Jun Suda, Tsunenobu Kimoto (Kyoto Univ.) SDM2013-133 |
The author's group previously reported that there are two types of interface states (fast and slow state) in 4H-SiC (000... [more] | SDM2013-133 pp.101-105 |
| CPM, LQE, ED | 2013-11-29 15:25 |
Osaka | Effects of Fabrication Process on Electrical Properties of InAlN MOS structures with ALD-Al2O3 Masahito Chiba, Takuma Nakano, Masamichi Akazawa (Hokkaido Univ.) ED2013-86 CPM2013-145 LQE2013-121 |
We investigated the dependence of the electrical properties on the fabrication procedure for InAlN MOS structure having ... [more] | ED2013-86 CPM2013-145 LQE2013-121 pp.101-105 |
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