| IEICE Technical Committee Submission System Conference Schedule |
Online Proceedings [Sign in] Tech. Rep. Archives |
All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ICD, SDM | 2009-07-16 15:50 |
Tokyo | Tokyo Institute of Technology | The Study of Mobility-Tinv Trade-off in Deeply Scaled High-k/Metal Gate Devices and Scaling Design Guideline for 22nm-node Generation Masakazu Goto, Shigeru Kawanaka, Seiji Inumiya, Naoki Kusunoki, Masumi Saitoh, Kosuke Tatsumura, Atsuhiro Kinoshita, Satoshi Inaba, Yoshiaki Toyoshima (Toshiba)  SDM2009-107 ICD2009-23 |
The trade-off between Tinv scaling and carrier mobility () degradation in deeply scaled HK/MG nMOSFETs has been ... [more] | SDM2009-107 ICD2009-23 pp.53-56 |
| SDM | 2009-06-19 13:20 |
Tokyo | An401・402 Inst. Indus. Sci., The Univ. of Tokyo | Control of Interfacial Structure of High-k/Ge Gate Stack Using Radical Nitridation Kimihiko Kato, Hiroki Kondo, Mitsuo Sakashita, Shigeaki Zaima (Nagoya Univ.) SDM2009-33 |
To realize high mobility Ge channel metal-oxide-semiconductor field-effect-transistor (MOSFET), it is necessary to estab... [more] | SDM2009-33 pp.39-44 |
| SDM | 2009-06-19 14:10 |
Tokyo | An401・402 Inst. Indus. Sci., The Univ. of Tokyo | Electrical Characterization of High-k Gate Dielectrics on Ge with HfGeN and GeO2 Interlayers
-- Formation of Insulator on Ge Substrate -- Hiroshi Nakashima, Kana Hirayama, Haigui Yang, Dong Wang (Kyushu Univ.) SDM2009-35 |
We are searching MIS structure with good interface and insulating properties for high mobility Ge channel. Our approach... [more] | SDM2009-35 pp.51-56 |
| SDM | 2009-06-19 14:50 |
Tokyo | An401・402 Inst. Indus. Sci., The Univ. of Tokyo | Effect of ALD-Al2O3 Layer on Interfacial Reaction between LaAlO and Ge Mitsuo Sakashita, Ryosuke Kato, Shinya Kyogoku, Hiroki Kondo, Shigeaki Zaima (Nagoya Univ.) SDM2009-37 |
Ge channel MOSFET with high-k gate dielectric film attract much attention from a viewpoint of realizing high speed and l... [more] | SDM2009-37 pp.61-66 |
| SDM | 2009-06-19 15:10 |
Tokyo | An401・402 Inst. Indus. Sci., The Univ. of Tokyo | Investigation of Al2O3 Diffusion Annealing Process for Low Vt pMISFET with Al2O3-Capped HfO2 Dielectrics Tetsu Morooka, Takeo Matsuki, Nobuyuki Mise, Satoshi Kamiyama, Toshihide Nabatame, Takahisa Eimori, Yasuo Nara, Jiro Yugami, Kazuto Ikeda, Yuzuru Ohji (Selete) SDM2009-38 |
We have systematically studied the effect of post deposition annealing (PDA) for Al2O3-capped HfO2 on flatband voltage (... [more] | SDM2009-38 pp.67-70 |
| SDM | 2009-06-19 15:40 |
Tokyo | An401・402 Inst. Indus. Sci., The Univ. of Tokyo | Intrinsic Correlation between Mobility Reduction and Vt shift due to Interface Dipole Modulation in HfSiON/SiO2 stack by La or Al addition Kosuke Tatsumura, Takamitsu Ishihara, Seiji Inumiya, Kazuaki Nakajima, Akio Kaneko, Masakazu Goto, Shigeru Kawanaka, Atsuhiro Kinoshita (Toshiba Corp.) SDM2009-39 |
Intrinsic correlation between mobility reduction by remote Coulomb scattering (RCS) and threshold voltage shift (ΔVt), b... [more] | SDM2009-39 pp.71-76 |
| SDM | 2009-06-19 16:00 |
Tokyo | An401・402 Inst. Indus. Sci., The Univ. of Tokyo | Floating Gate Memory with Biomineralized Nanodots Embedded in High-k Gate Dielectric Kosuke Ohara, Ichiro Yamashita (NAIST), Toshitake Yaegashi, Masahiro Moniwa, Masaki Yoshimaru (STARC), Yukiharu Uraoka (NAIST/CREST) SDM2009-40 |
The memory properties of nano-dot-type floating gate memories with Co bio-nanodots (Co-BNDs) embedded in HfO2 layer were... [more] | SDM2009-40 pp.77-80 |
| SDM | 2009-06-19 16:20 |
Tokyo | An401・402 Inst. Indus. Sci., The Univ. of Tokyo | Formation of Pr Oxide by Atomic Layer Deposition Using Pr(EtCp)3. Hiroki Kondo, Kazuya Furuta, Hirotaka Matsui, Mitsuo Sakashita, Shigeaki Zaima (Nagoya Univ.) SDM2009-41 |
Formation of Pr oxide by atomic layer deposition (ALD) using Pr(EtCp)3 precursor was investigated, and ALD growth of Pr ... [more] | SDM2009-41 pp.81-85 |
| SDM | 2009-06-19 16:50 |
Tokyo | An401・402 Inst. Indus. Sci., The Univ. of Tokyo | Characterization of La Diffusion into HfO2/SiO2 Stacked Layers from Ultrathin LaOx Akio Ohta, Daisuke Kanme, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima Univ.) SDM2009-42 |
A stack structure consisting of ~1.3nm-thick LaOx and ~4.0nm-thick HfO2 was formed on thermally grown SiO2 on Si(100) by... [more] | SDM2009-42 pp.87-92 |
| ICD, SDM | 2008-07-17 09:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Drain Current Fluctuation in High-k Dielectric p-MOSFETs
-- Effects of Single-Hole Capture/Emission by the Traps in High-k Dielectric -- Shigeki Kobayashi, Masumi Saitoh, Ken Uchida (Corporate RDC, Toshiba Corp.) SDM2008-129 ICD2008-39 |
Random telegraph noise (RTN) in scaled MOSFETs is one of the biggest concerns in the present and future LSIs. However, R... [more] | SDM2008-129 ICD2008-39 pp.7-10 |
| ICD, SDM | 2008-07-18 14:40 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Fabrication of Ultra Shallow Junction and Improvement of Metal Gate High-k CMOS Performance by FSP-FLA (Flexibly-Shaped-Pulse Flash-Lamp-Annealing) Technology Takashi Onizawa, Shinichi Kato, Takayuki Aoyama, Yasuo Nara, Yuzuru Ohji (selete) SDM2008-146 ICD2008-56 |
We propose the suitable milli-second annealing (MSA) for metal/high-k device performance and ultra-shallow-junction (USJ... [more] | SDM2008-146 ICD2008-56 pp.103-108 |
| ICD, SDM | 2008-07-18 15:05 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Impact of Tantalum Composition in TaCx/HfSiON Gate Stack on Device Performance of Aggressively Scaled CMOS Devices with SMT and Strained CESL Masakazu Goto, Kosuke Tatsumura, Shigeru Kawanaka, Kazuaki Nakajima, Reika Ichihara, Yasuhito Yoshimizu, Hiroyuki Onoda, Koji Nagatomo, Toshiyuki Sasaki, Takashi Fukushima, Akiko Nomachi, Seiji Inumiya, Tomonori Aoyama, Masato Koyama, Yoshiaki Toyoshima (Toshiba Corp.) SDM2008-147 ICD2008-57 |
We report TaCx/HfSiON gate stack CMOS device with simplified gate 1st process from the viewpoints of fixed charge genera... [more] | SDM2008-147 ICD2008-57 pp.109-114 |
| SDM, ED | 2008-07-09 14:35 |
Hokkaido | Kaderu２・７ | [Invited Talk]
High-K Dielectric for Charge Trap-type Flash Memory Application Byung-Jin Cho (KAIST), Wei He, Jing Pu (National Univ. of Singapore) ED2008-46 SDM2008-65 |
In this paper, lanthanide group oxides, AlLaOx, HfLaOx, Gd2O3 and GdAlO3, used as blocking oxide in charge trap - type F... [more] | ED2008-46 SDM2008-65 pp.37-41 |
| ED | 2008-06-13 14:15 |
Ishikawa | Kanazawa University | Characterization of N-doped AlSiO film for wide bandgap semiconductors Naoyoshi Komatsu, Hirotaka Tanaka, Hidemitsu Aoki, Keiko Matsunouchi, Chiharu Kimura (Osaka Univ.), Yukihiko Okumura (Maizuru National Col. of Tech.), Takashi Sugino (Osaka Univ.) ED2008-25 |
A gate insulator film with a wide bandgap and a high dielectric constant is required to achieve high power field effect ... [more] | ED2008-25 pp.17-22 |
| SDM | 2008-06-10 09:55 |
Tokyo | An401・402, Inst. Indus. Sci., The Univ. of Tokyo | Gate Dielectrics Interface Control for III-V MISFET Tetsuji Yasuda, Noriyuki Miyata (AIST), Akihiro Ohtake (NIMS) SDM2008-49 |
Introduction of III-V semiconductors to the n channel of CMOS devices is one of the options to sustain performance impro... [more] | SDM2008-49 pp.41-46 |
| SDM | 2008-06-10 11:20 |
Tokyo | An401・402, Inst. Indus. Sci., The Univ. of Tokyo | XPS Study of TiAlN/HfSiON Gate Stack
-- Reduction of Effective Work Function Change Induced by Al Diffusion -- Akio Ohta, Taiki Mori, Hiromichi Yoshinaga, Seiichi Miyazaki (Hiroshima Univ.), Masaru Kadoshima, Yasuo Nara (Selete) SDM2008-52 |
~30nm-thick TiAlN and TiN gate were deposited on HfSiON/SiO2/Si(100) stack structure and followed by anneal at 1000º... [more] | SDM2008-52 pp.59-64 |
| SDM | 2008-06-10 13:10 |
Tokyo | An401・402, Inst. Indus. Sci., The Univ. of Tokyo | Fabrication of Pr oxide films by MOCVD and evaluation of its electrical properties Hiroki Kondo, Shinya Sakurai (Nagoya Univ.), Akira Sakai (Osaka Univ.), Masaki Ogawa, Shigeaki Zaima (Nagoya Univ.) SDM2008-54 |
Metal organic chemical vapor deposition (MOCVD) of Pr2O3 films using Pr(EtCp)3 and their electrical properties were inve... [more] | SDM2008-54 pp.71-75 |
| SDM | 2008-06-10 14:35 |
Tokyo | An401・402, Inst. Indus. Sci., The Univ. of Tokyo | Bio-nano dot floating gate memory with High-k films Kosuke Ohara, Yukiharu Uraoka, Takashi Fuyuki, Ichiro Yamashita (NAIST), Toshitake Yaegashi, Masahiro Moniwa, Masaki Yoshimaru (STARC) SDM2008-57 |
The memory characteristics of nanodot floating gate memories with High-k tunnel oxide were investigated using MOS capaci... [more] | SDM2008-57 pp.89-92 |
| ICD | 2008-04-17 13:05 |
Tokyo | [Invited Talk]
Embedded DRAM Technology for Consumer Electronics Hiroki Shirai, Ryousuke Ishikawa, Yuichi Itoh, Takuya Kitamura, Mami Takeuchi, Takashi Sakoh, Ken Inoue, Tohru Kawasaki, Nobuyuki Katsuki, Hiroyuki Hoshizaki, Shinichi Kuwabara, Hidetaka Natsume, Masato Sakao, Takaho Tanigawa (NEC Electronics) ICD2008-4 |
This paper presents embedded DRAM device technology utilizing stacked MIM(Metal-Insulator-Metal) capacitor. Targeted for... [more] | ICD2008-4 pp.19-24 |
|
| SDM, R, ED | 2007-11-16 13:00 |
Osaka | Electrical Characterization of Yttriumaluminate(YAlO)Film Keiko Matsunouchi, Naoyoshi Komatsu, Chiharu Kimura, Hidemitsu Aoki, Takashi Sugino (Osaka Univ.) R2007-46 ED2007-179 SDM2007-214 |
To achieve high power FET using wide bandgap semiconductor, a gate insulator film with a wide bandgap and a high dielect... [more] | R2007-46 ED2007-179 SDM2007-214 pp.1-6 |
|
[Return to Top Page]