|
|
All Technical Committee Conferences (Searched in: All Years)
|
|
Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
|
Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
ED, MW |
2014-01-17 09:30 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Characteristics of Vertical GaN schottky barrier diodes and Heterojunction-Field-Effect Transistors on Low-Dislocation-Density GaN substrates Susumu Yoshimoto, Kuniaki Ishihara, Masaya Okada, Kazuhide Sumiyoshi, Hidenori Hirano, Fuminori Mitsuhashi, Yusuke Yoshizumi, Takashi Ishizuka, Makoto Kiyama, Masaki Ueno (Sumitomo Electric) ED2013-124 MW2013-189 |
Vertical GaN power devices which are fabricated on free-standing GaN substrates are expected for reduction of collapse, ... [more] |
ED2013-124 MW2013-189 pp.79-84 |
CPM, LQE, ED |
2010-11-12 11:15 |
Osaka |
|
Vertical Heterojunction Field-Effect Transistors on Low Dislocation Density GaN Substrates Masaya Okada, Yu Saitoh, Mitsunori Yokoyama, Ken Nakata, Seiji Yaegassi, Koji Katayama, Masaki Ueno, Makoto Kiyama, Tsukuru Katsuyama, Takao Nakamura (SEI) ED2010-157 CPM2010-123 LQE2010-113 |
A novel vertical heterojunction field-effect transistors (VHFETs) with re-grown AlGaN/GaN two-dimensional electron gas c... [more] |
ED2010-157 CPM2010-123 LQE2010-113 pp.67-70 |
ED |
2010-06-17 14:25 |
Ishikawa |
JAIST |
Analysis of electron velocity reduction rate due to self-heating in AlGaN/GaN heterojunction field-effect transistors Toshi-kazu Suzuki, Nariaki Tanaka (JAIST) ED2010-36 |
(To be available after the conference date) [more] |
ED2010-36 pp.17-20 |
ED |
2008-06-13 13:00 |
Ishikawa |
Kanazawa University |
Surface passivation of AlGaN/GaN heterojunction field-effect transistors by SiN/AlN bilayer structure Nariaki Tanaka (JAIST), Yasunobu Sumida, Hiroji Kawai (POWDEC), Toshi-kazu Suzuki (JAIST) ED2008-22 |
By using AlN single layer, SiN single layer, or SiN/AlN bilayer structure, we have investigated surface passivation of A... [more] |
ED2008-22 pp.1-4 |
MW, ED |
2007-01-19 10:10 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
A Distortion-Cancelled Doherty 28V Operated 330W GaAs Heterojunction FET Power Amplifier for Cellular Base Stations Isao Takenaka, Koji Ishikura, Hidemasa Takahashi, Koichi Hasegawa, Takashi Ueda, Toshimichi Kurihara, Kazunori Asano, Naotaka Iwata (NEC Electronics) |
A low distortion Doherty high-power amplifier has been developed for cellular base stations. The amplifier delivered 330... [more] |
ED2006-227 MW2006-180 pp.149-154 |
|
|
|
Copyright and reproduction :
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
|
[Return to Top Page]
[Return to IEICE Web Page]
|