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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 21 - 31 of 31 [Previous]  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
ED 2010-10-26
09:55
Kyoto   Frequency characteristics of Vacuum Transistor using Hafunium Nitride Field Emitter Array
Keita Ikeda, Wataru Ohue, Yasuhito Gotoh, Hiroshi Tsuji (Kyoto Univ.) ED2010-137
Vacuum transistors using field emitter array have been developed for a signal amplifier. We fabricated a gated 40,000-ti... [more] ED2010-137
pp.47-50
AP 2010-04-09
13:25
Kyoto Doshisha Univ. Maximization of the Channel Capacity of a MIMO Dipole Array by an Optimum Impedance Matching and Its Mechanism Analysis
Koichi Ogawa (Panasonic), Toshiteru Hayashi (Panasonic Mobile Communications), Atsushi Yamamoto (Panasonic) AP2010-5
In this paper, analytical studies on an optimum matching condition for achieving the maximum channel capacity of a MIMO ... [more] AP2010-5
pp.19-24
OPE, OFT 2010-02-26
09:20
Tokyo Kikai-Shinko-Kaikan Bldg. Influence of Frequency Chirping Induced by Semiconductor Optical Amplifier on Transmission Characteristics
Kei Kitamura, Motoharu Matsuura, Naoto Kishi (Univ. of Electro-Commun.) OFT2009-83 OPE2009-224
We investigated the transmission characteristics of the converted signal with frequency chirping after wavelength conver... [more] OFT2009-83 OPE2009-224
pp.1-6
SANE 2009-11-04
10:10
Overseas Fudan University (Shanghai) A Coherent Jamming Method against Frequency-Stepped Chirp ISAR with Frequency-Stepped Signal
Tao Yu, Long Chi, Qun Zhang, Feng Zhu (AFEU) SANE2009-132
Jamming to the Inverse Synthetic Aperture Radar (ISAR) is more difficult than that to the conventional radar because of ... [more] SANE2009-132
pp.275-279
ED 2009-10-15
15:05
Fukui   Electron emission characteristics of field emitter array with hafnium nitride cathode
Yasuhito Gotoh, Keita Ikeda, Yuko Miyata, Keisuke Endo, Hiroshi Tsuji (Kyoto Univ.) ED2009-119
We have fabricated field emitter array (FEA) with hafnium nitride (HfN) cathode.
The electron emission characteristics ... [more]
ED2009-119
pp.17-20
OPE, EMD, CPM, LQE 2009-08-20
16:15
Miyagi   Oscillation characteristics of a 1.5μm FM-eliminated 13C2H2 frequency-stabilized laser diode
Keisuke Kasai, Masataka Nakazawa (Tohoku Univ.) EMD2009-40 CPM2009-64 OPE2009-88 LQE2009-47
We demonstrate the frequency stabilization of a 1.5 um laser diode (LD) with a low intensity noise and a narrow linewidt... [more] EMD2009-40 CPM2009-64 OPE2009-88 LQE2009-47
pp.73-76
SP 2009-06-25
15:00
Hokkaido Clark Memorial Hall, Hokkaido Univ. Fundamental Frequency Extraction Based on p-th Power Subtraction of Amplitude Spectrum
Saori Motegi, Tetsuya Shimamura (Saitama Univ.) SP2009-39
In this paper, a fundamental frequency extraction method of noisy speech is proposed.
A p-th power amplitude spectrum i... [more]
SP2009-39
pp.93-98
EE 2009-02-13
09:50
Overseas Industrial Technology Research Institute Dynamic Characteristics of Digitally Controlled Boost Type DC-DC Converter
Akihiro Fukayama, Masashi Okamatsu (Nagasaki Univ.), Hiroyuki Yajima (Nippon Chemi-Con LTD.), Fujio Kurokawa (Nagasaki Univ.) EE2008-77
Abstract: This paper presents the basic characteristics of the digitally controlled boost type dc-dc converter. The stat... [more] EE2008-77
pp.77-81
MW, ED 2009-01-15
14:50
Tokyo Kikai-Shinko-Kaikan Bldg High-frequency and low-noise performances of InP-based HEMTs for millimeter-wave monolithic integrated circuits
Issei Watanabe, Akira Endoh (National Inst. of Info.&Com. Tech.), Takashi Mimura (National Inst. of Info.&Com. Tech/Fujitsu Lab. Limited,), Toshiaki Matsui (National Inst. of Info.&Com. Tech.) ED2008-214 MW2008-179
InP-based high electron mobility transistors (HEMTs) are the most promising devices not only for future high-speed and h... [more] ED2008-214 MW2008-179
pp.95-99
CS 2008-11-07
10:25
Hokkaido Hotel Tsturuga, Akan, Hokkaido Steady-State Kalman Filtering for Channel Estimation in OFDM Systems Utilizing SNR
Maduranga Liyanage, Iwao Sasase (Keio Univ.) CS2008-36
Kalman filters are effective channel estimators but they have the drawback of having heavy calculations when filtering n... [more] CS2008-36
pp.65-70
MW, ED 2005-01-18
14:25
Tokyo   -
-, -, -, - (OKI)
The device performances of double-recessed 0.1-µm-gate pseudomorphic InP-based high electron mobility transistors ... [more] ED2004-221 MW2004-228
pp.53-58
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