Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
ED |
2010-10-26 09:55 |
Kyoto |
|
Frequency characteristics of Vacuum Transistor using Hafunium Nitride Field Emitter Array Keita Ikeda, Wataru Ohue, Yasuhito Gotoh, Hiroshi Tsuji (Kyoto Univ.) ED2010-137 |
Vacuum transistors using field emitter array have been developed for a signal amplifier. We fabricated a gated 40,000-ti... [more] |
ED2010-137 pp.47-50 |
AP |
2010-04-09 13:25 |
Kyoto |
Doshisha Univ. |
Maximization of the Channel Capacity of a MIMO Dipole Array by an Optimum Impedance Matching and Its Mechanism Analysis Koichi Ogawa (Panasonic), Toshiteru Hayashi (Panasonic Mobile Communications), Atsushi Yamamoto (Panasonic) AP2010-5 |
In this paper, analytical studies on an optimum matching condition for achieving the maximum channel capacity of a MIMO ... [more] |
AP2010-5 pp.19-24 |
OPE, OFT |
2010-02-26 09:20 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Influence of Frequency Chirping Induced by Semiconductor Optical Amplifier on Transmission Characteristics Kei Kitamura, Motoharu Matsuura, Naoto Kishi (Univ. of Electro-Commun.) OFT2009-83 OPE2009-224 |
We investigated the transmission characteristics of the converted signal with frequency chirping after wavelength conver... [more] |
OFT2009-83 OPE2009-224 pp.1-6 |
SANE |
2009-11-04 10:10 |
Overseas |
Fudan University (Shanghai) |
A Coherent Jamming Method against Frequency-Stepped Chirp ISAR with Frequency-Stepped Signal Tao Yu, Long Chi, Qun Zhang, Feng Zhu (AFEU) SANE2009-132 |
Jamming to the Inverse Synthetic Aperture Radar (ISAR) is more difficult than that to the conventional radar because of ... [more] |
SANE2009-132 pp.275-279 |
ED |
2009-10-15 15:05 |
Fukui |
|
Electron emission characteristics of field emitter array with hafnium nitride cathode Yasuhito Gotoh, Keita Ikeda, Yuko Miyata, Keisuke Endo, Hiroshi Tsuji (Kyoto Univ.) ED2009-119 |
We have fabricated field emitter array (FEA) with hafnium nitride (HfN) cathode.
The electron emission characteristics ... [more] |
ED2009-119 pp.17-20 |
OPE, EMD, CPM, LQE |
2009-08-20 16:15 |
Miyagi |
|
Oscillation characteristics of a 1.5μm FM-eliminated 13C2H2 frequency-stabilized laser diode Keisuke Kasai, Masataka Nakazawa (Tohoku Univ.) EMD2009-40 CPM2009-64 OPE2009-88 LQE2009-47 |
We demonstrate the frequency stabilization of a 1.5 um laser diode (LD) with a low intensity noise and a narrow linewidt... [more] |
EMD2009-40 CPM2009-64 OPE2009-88 LQE2009-47 pp.73-76 |
SP |
2009-06-25 15:00 |
Hokkaido |
Clark Memorial Hall, Hokkaido Univ. |
Fundamental Frequency Extraction Based on p-th Power Subtraction of Amplitude Spectrum Saori Motegi, Tetsuya Shimamura (Saitama Univ.) SP2009-39 |
In this paper, a fundamental frequency extraction method of noisy speech is proposed.
A p-th power amplitude spectrum i... [more] |
SP2009-39 pp.93-98 |
EE |
2009-02-13 09:50 |
Overseas |
Industrial Technology Research Institute |
Dynamic Characteristics of Digitally Controlled Boost Type DC-DC Converter Akihiro Fukayama, Masashi Okamatsu (Nagasaki Univ.), Hiroyuki Yajima (Nippon Chemi-Con LTD.), Fujio Kurokawa (Nagasaki Univ.) EE2008-77 |
Abstract: This paper presents the basic characteristics of the digitally controlled boost type dc-dc converter. The stat... [more] |
EE2008-77 pp.77-81 |
MW, ED |
2009-01-15 14:50 |
Tokyo |
Kikai-Shinko-Kaikan Bldg |
High-frequency and low-noise performances of InP-based HEMTs for millimeter-wave monolithic integrated circuits Issei Watanabe, Akira Endoh (National Inst. of Info.&Com. Tech.), Takashi Mimura (National Inst. of Info.&Com. Tech/Fujitsu Lab. Limited,), Toshiaki Matsui (National Inst. of Info.&Com. Tech.) ED2008-214 MW2008-179 |
InP-based high electron mobility transistors (HEMTs) are the most promising devices not only for future high-speed and h... [more] |
ED2008-214 MW2008-179 pp.95-99 |
CS |
2008-11-07 10:25 |
Hokkaido |
Hotel Tsturuga, Akan, Hokkaido |
Steady-State Kalman Filtering for Channel Estimation in OFDM Systems Utilizing SNR Maduranga Liyanage, Iwao Sasase (Keio Univ.) CS2008-36 |
Kalman filters are effective channel estimators but they have the drawback of having heavy calculations when filtering n... [more] |
CS2008-36 pp.65-70 |
MW, ED |
2005-01-18 14:25 |
Tokyo |
|
- -, -, -, - (OKI) |
The device performances of double-recessed 0.1-µm-gate pseudomorphic InP-based high electron mobility transistors ... [more] |
ED2004-221 MW2004-228 pp.53-58 |