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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| OME | 2009-01-21 13:40 |
Aichi | Ｎａｇｏｙａ Ｕｎｉｖ． | * Norihiro Kobayashi, Yasuo Azuma (Tokyo Inst. of Tech.), Masayuki Kanehara, Toshiharu Teranishi (Univ. of Tsukuba), Simon Chorley, Jonathan Prance, Charles G. Smith, Yutaka Majima (Tokyo Inst. of Tech./JST)  OME2008-88 |
Coulomb blockade electron shuttle phenomena through Au nanodot have been observed under a nanomechanical vibration of Au... [more] | OME2008-88 pp.33-38 |
| ED | 2008-08-04 14:15 |
Shizuoka | Sizuoka Univ. Hamamatsu Campus | Electron emission from nanocrystalline silicon based MOS chathodes Hidetaka Shimawaki, Yo Kida (Hachinohe Inst. Tech.), Yoichiro Neo, Hidenori Mimura (Shizuoka Univ.), Katsuhisa Murakami, Fujio Wakaya, Mikio Takai (Osaka Univ.) ED2008-112 |
Emission characteristics of planar cathodes based on nanocrystalline Si covered with a thin oxide film have been studied... [more] | ED2008-112 pp.15-20 |
| SDM, ED | 2008-07-09 17:35 |
Hokkaido | Kaderu２・７ | Recessed Channel Dual Gate Single Electron Transistors (RCDG-SETs) for Room Temperature Operation Sang Hyuk Park, Sangwoo Kang, Dong-Seup Lee, Jung Han Lee, Hong-Seon Yang, Kwon-Chil Kang, Joung-Eob Lee, Jong Duk Lee, Byung-Gook Park (Seoul National Univ.) ED2008-53 SDM2008-72 |
A Recessed-Channel Dual-Gate Single Electron Transistor (RCDG-SET) which has the possibility of room temperature operati... [more] | ED2008-53 SDM2008-72 pp.73-76 |
| ED, SDM | 2008-01-30 14:45 |
Hokkaido | Design of dopant-induced quantum dot arrays in silicon nanostructures for single-electron transfer Daniel Moraru, Daisuke Nagata, Kiyohito Yokoi, Hiroya Ikeda, Michiharu Tabe (Shizuoka Univ.) ED2007-240 SDM2007-251 |
Randomly distributed dopants in the channel of silicon-on-insulator (SOI) field-effect transistors (FETs) can introduce ... [more] | ED2007-240 SDM2007-251 pp.17-22 |
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| OME | 2007-10-26 14:15 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Adsorption Place Dependence of STM/STS in Endohedral Metallofullerene Er@C82 Molecule on Alkanethiol SAM Keijiro Kono, Norihiro Kobayashi, Masachika Iwamoto, Yuhsuke Yasutake (Tokyo Tech.), Shingo Okubo, Toshiya Okazaki (AIST), Yutaka Majima (Tokyo Tech.) OME2007-44 |
We report adsorption place dependence of endohedral metallofullerene Er@C82 on alkanethiol self-assembled monolayer (SAM... [more] | OME2007-44 pp.7-12 |
| ED, SDM | 2007-06-25 13:00 |
Overseas | Commodore Hotel Gyeongju Chosun, Gyeongju, Korea | [Invited Talk]
Si single-electron FETs for single-photon detection Michiharu Tabe, Ratno Nuryadi, Zainal Burhanudin (Shizuoka Univ.) |
We have studied three research aspects as key technologies for breakthrough in Si devices, i.e., time-controlled transfe... [more] | |
| SDM, ED | 2007-02-02 13:00 |
Hokkaido | Cotunneling Current in Si Single-electron Transistor Based on Multiple Islands Kensaku Ohkura, Tetsuya Kitade, Anri Nakajima (Hiroshima Univ.) |
Single-electron transistors (SETs) are promising candidates for use as basic elements of future low-power integrated cir... [more] | ED2006-254 SDM2006-242 pp.79-82 |
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| ED, SDM | 2006-01-27 10:30 |
Hokkaido | Hokkaido Univ. | Study on switching characteristics of quantum wire transistors and single electron transistors controlled by Schottky wrap gate for ultra-low power quantum nano integrated logic circuits Seiya Kasai, Miki Yumoto, Hideki Hasegawa (Hokkaido Univ.) |
To confirm the ultra-low power consumption capability of quantum nano integrated logic circuits, such as nanoprocessors,... [more] | ED2005-234 SDM2005-246 pp.15-20 |
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