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All Technical Committee Conferences  (Searched in: All Years)

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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 20 of 28  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
SCE 2019-08-09
11:15
Ibaraki National Institute of Advanced Industrial Science and Technology Applicability of small Josephson Junction Arrays as Radiation Detectors
Toshiki Suzuki, Kanyolo, Godwill Mbiti, Hiroshi Nishigaki, Yoshinao Mizugaki, Hiroshi Shimada (UEC) SCE2019-11
Arrays of small Josephson junctions exhibit a unique current-voltage characteristics known as Coulomb blockade. Experime... [more] SCE2019-11
pp.15-19
QIT
(2nd)
2017-05-29
15:00
Kyoto Ritesumeikan University, Suzaku Campus [Poster Presentation] Controlled microwave absorption in superconducting electric circuit system based on NIS junctions
Shumpei Masuda (TMDU), Kuan Yen Tan, Matti Partanen, Matti Silveri (Aalto Univ.), Hermann Grabert (Univ. of Freiburg), Mikko Möttönen (Aalto Univ.)
We have studied experimentally and theoretically the system with a superconducting coplanar waveguide resonator coupled ... [more]
NLP 2016-12-13
10:55
Aichi Chukyo Univ. Single-Electron Decoder Circuits for Communication Systems Using Photoelectric Effect and Electron Wave Frequency Discrimination
Atsushi Setuie, Jinya Sato, HIsato Fujisaka, Takeshi Kamio (Hiroshima City Univ.) NLP2016-96
Application of quantum mechanical phenomena to front-end parts in receivers of Tera-hertz (THz) sensing and communicatio... [more] NLP2016-96
pp.67-72
SDM, ED 2015-02-06
11:05
Hokkaido Hokkaido Univ. Fabrication and characterization of graphene single carrier transistor
Takuya Iwasaki, Manoharan Muruganathan, Hiroshi Mizuta (JAIST) ED2014-150 SDM2014-159
In this work, we study the fabrication and the characterization of the graphene Single Carrier Transistor (SCT) with sin... [more] ED2014-150 SDM2014-159
pp.69-73
ICD, SDM 2014-08-04
13:05
Hokkaido Hokkaido Univ., Multimedia Education Bldg. [Invited Talk] Research progress in steep slope devices and technologies to enhance ON current in TFETs
Takahiro Mori, Yukinori Morita, Shinji Migita, Wataru Mizubayashi, Koichi Fukuda, Noriyuki Miyata, Tetsuji Yasuda, Meishoku Masahara, Hiroyuki Ota (AIST) SDM2014-67 ICD2014-36
Steep slope devices (SSDs) have attracted because of the increase demand for low-power devices. This paper reviews recen... [more] SDM2014-67 ICD2014-36
pp.29-34
ED 2014-08-01
15:50
Tokyo Kikai-Shinko-Kaikan Bldg. B3-1 Band offset at Al2O3/β-Ga2O3 Heterojunctions
Takafumi Kamimura (NICT), Kohei Sasaki (Tamura Corp.), Man Hoi Wong, Daivasigamani Krishnamurthy (NICT), Akito Kuramata (Tamura Corp.), Takekazu Masui (Koha Co., Ltd.), Shigenobu Yamakoshi (Tamura Corp.), Masataka Higashiwaki (NICT) ED2014-60
The band alignment of Al2O3/n-Ga2O3 (010) was investigated by x-ray photoelectron spectroscopy (XPS). With a band gap of... [more] ED2014-60
pp.41-46
SDM 2013-06-18
13:35
Tokyo Kikai-Shinko-Kaikan Bldg. Epitaxial growth of iron oxide nanodots on Si substrate and their electronic states
Takafumi Ishibe, Yoshiaki Nakamura, Hideki Matsui, Shotaro Takeuchi, Akira Sakai (Osaka Univ.) SDM2013-54
Iron oxide thin film on Si substrate has been expected as a low-cost and ecological material for resistive random access... [more] SDM2013-54
pp.51-55
SDM, ED 2013-02-28
09:50
Hokkaido Hokkaido Univ. Blocking Oscillation Using Combination of Discrete and Continuous Charge/Flux Transfer in Dissipative Single-Quantum Devices
Yoshinao Mizugaki (Univ. of Electro- Comm.) ED2012-139 SDM2012-168
The island charge of a single-electron (SE) transistor is discrete because of SE tunneling through tiny tunnel junctions... [more] ED2012-139 SDM2012-168
pp.59-64
NLP, CAS 2012-09-21
14:50
Kochi Eikokuji Campus, University of Kochi Studies on Couplings of SET Ring Oscillators for In-Phase Oscillation
Haruka Noda, Keisuke Nagata, Hisato Fujisaka, Takeshi Kamio, Kazuhisa Haeiwa (Hiroshima City Univ.) CAS2012-46 NLP2012-72
Ring oscillator with single-electron tunneling (SET) transistors has a very large phase noise because electron tunneling... [more] CAS2012-46 NLP2012-72
pp.87-91
ED, SDM 2012-02-07
14:35
Hokkaido   KFM observation of individual dopant potentials and electron charging
Roland Nowak, Miftahul Anwar, Daniel Moraru, Takeshi Mizuno (Shizuoka Univ.), Ryszard Jablonski (Warsaw Univ. of Tech.), Michiharu Tabe (Shizuoka Univ.) ED2011-144 SDM2011-161
We utilize Kelvin probe force microscope (KFM) to measure surface potential of thin channel of nanoscale field effect tr... [more] ED2011-144 SDM2011-161
pp.13-18
ED, SDM 2012-02-08
09:55
Hokkaido   Simultaneous Control of Series-Connected Nanogaps by Field-Emission-Induced Electromigration
Mitsuki Ito, Shunsuke Akimoto, Jun-ichi Shirakashi (Tokyo Univ. of Agr. & Tech.) ED2011-151 SDM2011-168
We present a simple and easy technique for the simultaneous control of electrical properties of multiple Ni nanogaps. Th... [more] ED2011-151 SDM2011-168
pp.53-58
NLP 2011-05-26
13:50
Kagawa Olive park olive memorial hall Analyses of All-Coupled and Nearest-Neighbor-Coupled Single-Electron Ring Oscillators
Masakazu Ishida, Keisuke Nagata, Hisato Fujisaka, Takeshi Kamio, Kazuhisa Haeiwa (Hiroshima City Univ.) NLP2011-3
Ring oscillators constructed with single-electron transistor have large phase noise because of probabilistic
electron t... [more]
NLP2011-3
pp.9-14
SDM, ED 2011-02-24
11:10
Hokkaido Hokkaido Univ. Current Intermittency in SOI-FETs under Light Illumination
Arief Udhiarto, Daniel Moraru, Ryusuke Nakamura, Takeshi Mizuno, Michiharu Tabe (Shizuoka Univ.) ED2010-204 SDM2010-239
We investigate the effects of continuous light illumination on single-electron transport via quantum dots in silicon-on-... [more] ED2010-204 SDM2010-239
pp.67-72
NLP, CAS 2010-08-03
10:30
Tokushima Naruto University of Education A Study on Phase Noise of Coupled Single-Electron Ring Oscillators
Masakazu Ishida, Hisato Fujisaka, Takeshi Kamio, Kazuhisa Haeiwa (Hiroshima City Univ.) CAS2010-58 NLP2010-74
Ring oscillators constructed with single-electron tunneling devices
have large phase noise because of probabilistic el... [more]
CAS2010-58 NLP2010-74
pp.135-140
ED, SDM 2010-07-02
16:15
Tokyo Tokyo Inst. of Tech. Ookayama Campus Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor
Masakazu Muraguchi (Tohoku Univ.), Yoko Sakurai, Yukihiro Takada, Shintaro Nomura, Kenji Shiraishi (Univ. of Tsukuba.), Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki (Hiroshima Univ.), Yasuteru Shigeta (Univ. of Hyogo), Tetsuo Endoh (Tohoku Univ.) ED2010-122 SDM2010-123
The efficiency and stability of electron injection from the electrode to the nano-structure is one of the most important... [more] ED2010-122 SDM2010-123
pp.319-324
SDM, CPM, ED 2010-05-13
14:45
Shizuoka Shizuoka University (Hamamatsu Campus) Theoretical study on novel Si single-electron refrigerator
Hiroya Ikeda, Faiz Salleh (Shizuoka Univ.) ED2010-20 CPM2010-10 SDM2010-20
We have proposed a novel single-electron-refrigerator (SER) device which can be fabricated in Si-on-insulator wafers and... [more] ED2010-20 CPM2010-10 SDM2010-20
pp.17-21
ED, SDM 2010-02-22
14:15
Okinawa Okinawaken-Seinen-Kaikan Analysis on Stochastic Resonance Behavior of Single Electron in Quantum Dots
Seiya Kasai (Hokkaido Univ/JST), Yuta Shiratori, Kensuke Miura (Hokkaido Univ.) ED2009-199 SDM2009-196
Stochastic resonance (SR) in single-electron charging and discharging process on quantum dots (QDs) is demonstrated theo... [more] ED2009-199 SDM2009-196
pp.17-21
ED, SDM 2010-02-22
16:30
Okinawa Okinawaken-Seinen-Kaikan Observation of enhanced MR effects in a single electron transistor with ferromagnetic lead electrodes
Nobuyuki Tamura, Kento Kikuchi, Masataka Moriya, Tadayuki Kobayashi, Hiroshi Shimada, Yoshinao Mizugaki (Univ. of Electro-Comm.) ED2009-204 SDM2009-201
We report our experimental results on the magneto-resistance ratio ($MRR$) of single-electron
transistors (SETs)
wit... [more]
ED2009-204 SDM2009-201
pp.47-52
SDM, ED 2009-06-25
12:45
Overseas Haeundae Grand Hotel, Busan, Korea Study on Quantum Electro-Dynamics in Vertical MOSFET
Masakazu Muraguchi, Tetsuo Endoh (Tohoku Univ./JST-CREST) ED2009-89 SDM2009-84
We have studied transmission property of electron in vertical MOSFET (V-MOSFET) from the viewpoint of quantum electro-dy... [more] ED2009-89 SDM2009-84
pp.169-172
SDM, ED 2009-06-26
11:45
Overseas Haeundae Grand Hotel, Busan, Korea Importance of the Eelectronic State on the Electrode in Electron Tunneling Processes between the Electrode and the Quantum Dot
Masakazu Muraguchi (Tohoku Univ.), Yukihiro Takada, Shintaro Nomura (Univ. of Tsukuba.), Tetsuo Endoh (Tohoku Univ.), Kenji Shiraishi (Univ. of Tsukuba.) ED2009-93 SDM2009-88
We have revealed that the electronic states in the electrodes give a significant influence to the electron transport in ... [more] ED2009-93 SDM2009-88
pp.185-188
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