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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| OME, IEE-DEI | 2014-07-10 16:00 |
Nagano | Transistor characteristics of vacuum deposited thin films of naphthalene diimide derivatives with long alkyl chains Kazuaki Iwasaki, Yoichiro Yokota (Shinshu Univ.), Naomi Oguma, Naoki Hirata (Color&Chemicals Mfg.), Musubu Ichikawa (Shinshu Univ.)  OME2014-33 |
We fabricated bottom-gate and top-contact transisters with naphthalene diimide derivatives with long alkyl chains (NTCDI... [more] | OME2014-33 pp.31-32 |
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| ED, SDM | 2014-02-27 15:05 |
Hokkaido | Hokkaido Univ. Centennial Hall | Fabrication of carbon nanotube thin-film transistors with high-speed flexographic printing technique Kentaro Higuchi (Nagoya Univ.), Yuta Nakajima, Takuya Tomura, Masafumi Takesue (Bando Chemical Industries), Shigeru Kishimoto (Nagoya Univ.), Katsuhiko Hata (Bando Chemical Industries), Yutaka Ohno (Nagoya Univ.) ED2013-135 SDM2013-150 |
We fabricated high-mobility carbon nanotube thin-film transistors (CNT TFTs) by fully non-lithographic and non-vacuum pr... [more] | ED2013-135 SDM2013-150 pp.19-24 |
| ED, MW | 2014-01-16 12:10 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Correlation of On-Wafer 400V Dynamic Behavior and Trap Characteristics of GaN-HEMTs Tadahiro Imada, Toshihide Kikkawa (Fujitsu Labs), Daniel Piedra, Tomas Palacios (Massachusetts Inst. of Tech.) ED2013-117 MW2013-182 |
A method for identifying the critical traps regarding to the dynamic behavior of gallium nitride high electron mobility ... [more] | ED2013-117 MW2013-182 pp.41-45 |
| ED | 2013-12-16 13:55 |
Miyagi | Research Institute of Electrical Communication Tohoku University | Monte Carlo Simulation of InAlAs/InGaAs HEMTs with Buried Gate Akira Endoh (NICT/Fujitsu Labs.), Issei Watanabe, Akifumi Kasamatsu (NICT), Takashi Mimura (Fujitsu Labs./NICT) ED2013-92 |
To achieve higher frequency operations of InP-based high electron mobility transistors (HEMTs), the buried gate structur... [more] | ED2013-92 pp.13-17 |
| SDM | 2013-12-13 16:40 |
Nara | NAIST | Shape and Size Effects on Electron Mobility of Rectangular Cross-sectional Ge Nanowires Hajime Tanaka, Seigo Mori, Naoya Morioka, Jun Suda, Tsunenobu Kimoto (Kyoto Univ.) SDM2013-131 |
We calculated the phonon-limited electron mobility of Ge nanowires with rectangular cross sections using a tight-binding... [more] | SDM2013-131 pp.91-96 |
| ED | 2013-08-09 09:00 |
Toyama | University of Toyama | MEMS Microphones on InP Substrates for High Performance Digital Ultrasonic Sensors Shunya Fujino, Yuta Mizuno, Kazuhiro Takaoka, Masayuki Mori, Koichi Maezawa (Univ. of Toyama) ED2013-44 |
This paper describes the fabrication process of the MEMS microphones on InP substrates. The process is based on ozone as... [more] | ED2013-44 pp.33-36 |
| MW, ED | 2013-01-18 14:55 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | AlGaN/GaN MIS-Gate HEMTs with SiCN Gate Stacks Kengo Kobayashi, Tomohiro Yoshida, Taiichi Otsuji, Ryuji Katayama, Takashi Matsuoka, Tetsuya Suemitsu (Tohoku Univ.) ED2012-126 MW2012-156 |
This paper reports AlGaN/GaN metal-insulator-semiconductor (MIS)-gate high electron mobility transistors (HEMTs) with a ... [more] | ED2012-126 MW2012-156 pp.75-78 |
| SDM | 2012-12-07 10:30 |
Kyoto | Kyoto Univ. (Katsura) | Change of Scattering Mechanisms of Holes in SiC by Electron Irradiation Kohji Murata, Tatsuya Morine, Hideharu Matsuura (Osaka Electro-Communication Univ), Shinobu Onoda, Takeshi Ohshima (JAEA) SDM2012-117 |
SiC has advantages of higher resistance to radiation and higher breakdown electric field, compared with Si. Therefore, S... [more] | SDM2012-117 pp.13-18 |
| ED, LQE, CPM | 2012-11-29 15:50 |
Osaka | Osaka City University | Reduction in Threshold Voltage Shift of Insulated-gate GaN-HEMT Using ALD-Al2O3 Films Shiro Ozaki, Toshihiro Ohki, Masahito Kanamura, Tadahiro Imada, Norikazu Nakamura, Naoya Okamoto, Toyoo Miyajima, Toshihide Kikkawa (Fujitsu Laboratories Ltd.) ED2012-75 CPM2012-132 LQE2012-103 |
We reported the threshold voltage (Vth) shift phenomena of insulated-gate GaN high electron mobility transistor (HEMT) f... [more] | ED2012-75 CPM2012-132 LQE2012-103 pp.41-44 |
| SDM, ED (Workshop) |
2012-06-29 11:00 |
Okinawa | Okinawa Seinen-kaikan | Improved current stability in multi-mesa-channel AlGaN/GaN HEMTs Kota Ohi, Tamotsu Hashizume (Hokkaido Univ.) |
We have proposed and characterized a multi-mesa-channel (MMC) AlGaN/GaN HEMT. By forming a periodic trench only under th... [more] | |
| OME, IEE-DEI | 2012-01-20 14:20 |
Aichi | Nagoya Univ. | Mobilites of Electron and Hole in TiO2 Thin Films under UV Light Irradiation Yusuke Watanabe, Yuji Muramoto, Noriyuki Shimizu (Meijo Univ.) OME2011-75 |
TiO2 has photocatalysis. When UV light is irradiated, electron-hole pairs are generated in TiO2. The source of photocata... [more] | OME2011-75 pp.35-39 |
| ED | 2011-07-30 12:05 |
Niigata | Multimedia system center, Nagaoka Univ. of Tech. | Quantum-Corrected Monte Carlo Analysis of Strained InAs HEMTs Jun Sato, Fumiharu Machida, Shinsuke Hara, Hiroki I. Fujishiro (TUS) ED2011-53 |
Because of their extremely high electron mobility, InAs and related materials have attracted much attention as promising... [more] | ED2011-53 pp.79-84 |
| IPSJ-CN, LOIS | 2011-05-19 14:00 |
Tokyo | NTT Musashino R&D Center | A Study on Geomagnetic Sensor Data in a Mobile Phone for an Estimation of Person Mobility Means Satoyuki Uehara, Tomonori Ito (Waseda Univ.), Hideki Yoshii (SBTM), Kazuhiro Tsurumaru, Naohisa Komatsu (Waseda Univ.) LOIS2011-5 |
A geomagnetic sensor is becoming a standard feature for mobile phone. In this paper, we show characteristics of geomagne... [more] | LOIS2011-5 pp.33-38 |
| OME, SDM | 2011-04-15 10:40 |
Saga | AIST Kyushu Center | Molecular design of n-type organic semiconductor having oxadiazole skeleton Masanao Era (Saga Univ.), Hiroaki Tokuhisa (JSR) SDM2011-3 OME2011-3 |
8 kind of oxadiazole derivatives were prepared and their electron mobility was evaluated by the Time-of-Flight technique... [more] | SDM2011-3 OME2011-3 pp.9-12 |
| SDM | 2010-10-22 11:10 |
Miyagi | Tohoku University | Evaluation of Internal Strain and Electron Mobility in poly-Si TFTs Formed by CW Laser Lateral Crystallization Shuntaro Fujii, Shin-Ichiro Kuroki, Koji Kotani (Tohoku Univ.) SDM2010-162 |
Tensile strain is induced in the polycrystalline silicon (poly-Si) films formed by CW laser lateral crystallization (CLC... [more] | SDM2010-162 pp.41-44 |
| ED, MW | 2010-01-14 10:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg | AlGaN/GaN HEMT having periodic mesa-gate structure Kota Ohi, Tamotsu Hashizume (Hokkaido Univ.) ED2009-183 MW2009-166 |
We proposed and characterized a multi-mesa-channel (MMC) AlGaN/GaN HEMT. By forming a periodic mesa, the MMC HEMT has pa... [more] | ED2009-183 MW2009-166 pp.49-53 |
| ED | 2009-11-30 09:25 |
Osaka | Osaka Science & Technology Center | Monte Carlo Analysis of Optical Pulse Response of Plasmon-Resonant Terahertz Emitter Kentaro Kubota, Eiichi Sano (Hokkaido Univ), Yahya Moubarak Meziani, Taiichi Otsuji (Tohoku Univ) ED2009-167 |
Terahertz(THz) radiation with feature of radio and optical waves has much interest due to its applications such as medic... [more] | ED2009-167 pp.41-45 |
| MW (Workshop) |
2009-08-20 - 2009-08-21 |
Overseas | KMUTNB, Bangkok, Thailand | DC I-V characteristics of cryogenically-cooled GaN HEMT amplifier employing blue-light illumination Yasunori Suzuki, Shoichi Narahashi (DOCOMO), Toshio Nojima (Hokudai) |
This paper experimentally investigates a 2-GHz band cryogenically-cooled gallium nitride high electron mobility transist... [more] | |
| SDM | 2009-06-19 13:20 |
Tokyo | An401・402 Inst. Indus. Sci., The Univ. of Tokyo | Control of Interfacial Structure of High-k/Ge Gate Stack Using Radical Nitridation Kimihiko Kato, Hiroki Kondo, Mitsuo Sakashita, Shigeaki Zaima (Nagoya Univ.) SDM2009-33 |
To realize high mobility Ge channel metal-oxide-semiconductor field-effect-transistor (MOSFET), it is necessary to estab... [more] | SDM2009-33 pp.39-44 |
| OME, EID | 2009-03-06 15:40 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Derivation of Equation for Electrical Conduction in Organic Semiconductor using Device Simulation Reiji Hattori, Sang-Gun Lee (Kyushu Univ.) EID2008-89 OME2008-100 |
The theoretical equations for I-V characteristics in an organic semiconductor was derived according to the internal carr... [more] | EID2008-89 OME2008-100 pp.33-36 |
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