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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ED, MWPTHz | 2022-12-19 16:05 |
Miyagi | [Invited Talk]
InP-HEMT Fabrication Process Technology for Beyond 5G Wireless Network with Tera-Hertz Band Takuya Tsutsumi, Hiroshi Hamada, Teruo Jyo, Hiroki Sugiyama, Taro Sasaki, Hiroyuki Takahashi, Fumito Nakajima (NTT)  ED2022-76 MWPTHz2022-47 |
Next-generation "Beyond 5G (B5G) / 6G" wireless network systems have been researched and developed for meeting with rapi... [more] | ED2022-76 MWPTHz2022-47 pp.23-27 |
|
| OME | 2022-11-11 13:00 |
Osaka | KINDAI Univ. | [Invited Talk]
Computational Chemistry Study on Charge and Exciton Transfer Dynamics in Organic Semiconductors Hirotaka Kitoh-Nishioka (Kindai Univ.) OME2022-25 |
We report theoretical studies on the microscopic mechanisms of charge/exciton transfer dynamics in organic semiconductor... [more] | OME2022-25 pp.1-6 |
| SDM | 2022-11-11 13:00 |
Online | Online | [Invited Talk]
Understanding of Electron Mobility Limiting Factor in Cryo-CMOS Hiroshi Oka, Takumi Inaba, Shota Iizuka, Hidehiro Asai, Kimihiko Kato, Takahiro Mori (AIST) SDM2022-74 |
To realize highly-integrated quantum computers, the Cryo-CMOS circuit has attracted significant attention for control/re... [more] | SDM2022-74 p.49 |
| ICD, SDM, ITE-IST [detail] | 2022-08-09 11:05 |
Online | [Invited Talk]
Effect of Conduction Band Edge States on Coulomb-Limiting Electron Mobility in Cryogenic MOSFET Operation Hiroshi Oka, Takumi Inaba, Shota Iizuka, Hidehiro Asai, Kimihiko Kato, Takahiro Mori (AIST) SDM2022-46 ICD2022-14 |
Cryogenic-CMOS technology has attracted significant attention for control/read-out qubits for realizing a large-scale qu... [more] | SDM2022-46 ICD2022-14 pp.54-59 |
|
| ED, CPM, LQE | 2021-11-26 15:20 |
Online | Online | Fabrication and electrical property characterization of AlGaN channel HEMT on AlN template Ryuichi Mori, Kenjiro Uesugi, Shegeyuki Kuboya, Kanako Shojiki, Hideto Miyake (Mie Univ.) ED2021-33 CPM2021-67 LQE2021-45 |
$Al_{0.85}Ga_{0.15}N$/$Al_{0.60}Ga_{0.40}N$ HEMT structures with channel thicknesses of 100–1000 nm were grown on low-di... [more] | ED2021-33 CPM2021-67 LQE2021-45 pp.83-86 |
| LQE, CPM, ED | 2020-11-26 15:00 |
Online | Online | Growth of GaN on AlN template with atomic-level flatness for High Electron Mobility Transistor Tatsuya Shirato, Kenjiro Uesugi, Shigeyuki Kuboya, Kanako Shojiki, Hideto Miyake (Mie Univ.) ED2020-11 CPM2020-32 LQE2020-62 |
We investigated the effect of carrier gas on GaN surface morphology. Bunched step-and-terrace structures and pits were f... [more] | ED2020-11 CPM2020-32 LQE2020-62 pp.41-44 |
| LQE, CPM, ED | 2020-11-26 15:30 |
Online | Online | Enhanced Breakdown Voltage in AlGaN/GaN HEMTs by Oxygen Plasma Treatment Shunsuke Kamiya, Takashi Nishitani, Yu Matsuda, Nozomu Takano, Joel T. Asubar, Hirokuni Tokuda (Univ. of Fukui), Masaaki Kuzuhara (Kwansei Gakuin Univ.) ED2020-12 CPM2020-33 LQE2020-63 |
With its high critical electric field as consequence of its wide bandgap, gallium nitride (GaN) is considered a leading ... [more] | ED2020-12 CPM2020-33 LQE2020-63 pp.45-48 |
| MWP | 2020-05-28 13:30 |
Online | Online | [Invited Talk]
Fabrication Process of InP-HEMT-based Sub-millimeter Wave ICs for Beyond 5G Application Takuya Tsutsumi, Hiroki Sugiyama, Hiroshi Hamada, Hideyuki Nosaka, Hideaki Matsuzaki (NTT) MWP2020-1 |
The 300-GHz sub-millimeter-wave band is one of the candidate frequency for “Beyond 5G” networks to meet rapidly increasi... [more] | MWP2020-1 pp.1-6 |
| ED, THz [detail] | 2019-12-23 16:20 |
Miyagi | InP Wafer-level Backside Process for Future Tera-hertz Operation Takuya Tsutsumi, Hiroshi Hamada, Hiroki Sugiyama, Hideyuki Nosaka, Hideaki Matsuzaki (NTT) ED2019-82 |
The sub-millimeter-wave band would be utilized in future mobile networks to cope with increasing data rates. InP-based S... [more] | ED2019-82 pp.23-28 |
|
| ED, THz [detail] | 2019-12-23 16:45 |
Miyagi | GaInSb n-Channel HEMTs Using Strained-Al0.40In0.60Sb/Al0.25In0.75Sb Stepped Buffer Koki Osawa, Takuya Iwaki, Yuki Endoh, Mizuho Hiraoka, Naoyuki Kishimoto, Takuya Hayashi (TUS), Issei Watanabe (NICT/TUS), Yoshimi Yamashita, Shinsuke Hara, Takahiro Gotow, Akifumi Kasamatsu (NICT), Akira Endoh, Hiroki Fujishiro (TUS) ED2019-83 |
We succeeded in fabricating GaInSb n-channel HEMTs for the first time in the world and measured their characteristics. W... [more] | ED2019-83 pp.29-32 |
|
| ED, THz | 2018-12-18 09:00 |
Miyagi | RIEC, Tohoku Univ. | [Invited Talk]
High-Speed Performance of InP-, Sb- and GaN-based HEMTs Akira Endoh, Issei Watanabe, Yoshimi Yamashita, Akifumi Kasamatsu (NICT), Hiroki Fujishiro (Tokyo Univ. of Science), Takashi Mimura (NICT) ED2018-62 |
We have fabricated nanometer-scale InP-, Sb- and GaN-based HEMTs by using electron beam lithography and measured their c... [more] | ED2018-62 pp.35-38 |
| MRIS, ITE-MMS | 2018-10-19 09:15 |
Osaka | Osaka University | [Invited Talk]
Printed electronics and spintronics using organic semiconductors Shun Watanabe (Univ. of Tokyo) MRIS2018-17 |
Organic semiconductors are being investigated as an emerging class of materials for electronics and spintronics, not onl... [more] | MRIS2018-17 pp.21-26 |
| ED, THz | 2017-12-19 09:00 |
Miyagi | RIEC, Tohoku Univ | [Invited Talk]
Development of Antimonide-Based Transistors Hiroki Fujishiro, Kyosuke Isono, Takuto Takahashi, Yoshiaki Harada, Naoki Oka, Jun Takeuchi, Yui Fujisawa (TUS), Sachie Fujikawa (Tokyo Denki Univ.), Ryuto Machida (TUS), Issei Watanabe, Yoshimi Yamashita, Akira Endoh, Shinsuke Hara, Akifumi Kasamatsu (NICT) ED2017-81 |
Quantum corrected Monte Carlo simulation shows that the InSb HEMT exhibits intrinsic fT more than 1 THz from Vds of arou... [more] | ED2017-81 pp.33-36 |
| SDM, ED, CPM | 2017-05-26 10:45 |
Aichi | VBL, Nagoya University | N-polar GaN MIS-HEMTs with Flat Interface Grown by Optimized MOVPE Kiattiwut Prasertsuk, Tomoyuki Tanikawa, Takeshi Kimura, Shigeyuki Kuboya, Tetsuya Suemitsu, Takashi Matsuoka (Tohoku Univ.) ED2017-26 CPM2017-12 SDM2017-20 |
An N-polar GaN high electron mobility transistor (HEMT) has an advantage over a Ga-polar HEMT from viewpoints of a poten... [more] | ED2017-26 CPM2017-12 SDM2017-20 pp.59-64 |
| ED | 2015-07-25 11:05 |
Ishikawa | IT Business Plaza Musashi 5F | Electron transport characteristics of strain reduced InSb QW structure with AlInSb stepped buffer layer Tatsuya Taketsuru, Sachie Fujikawa, Yoshiaki Harada, Hiroki Suzuki, Kyousuke Isono, Sanshiro Kato, Daisuke Tuji, Hiroki I. Fujishiro (TUS) ED2015-45 |
We investigated a high quality novel AlInSb buffer layer to increase the electron mobility of an InSb quantum well (QW) ... [more] | ED2015-45 pp.45-49 |
| EMD, CPM, OME | 2015-06-19 14:55 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Effect of the insertion of N2O added buffer layer on the characteristics of ZnO films grow on glass substrates by catalytic reaction assisted chemical vapor deposition Shingo Kanouchi, Yuki Ishizuka, Yuki Ohashi (Nagaoka Univ. technol.), Koichiro Oishi, Hironori Katagiri (Nagaoka Nat. Coll. Technol.), Yasuhiro Tamayama, Kanji Yasui (Nagaoka Univ. technol.) EMD2015-15 CPM2015-25 OME2015-28 |
Aiming at the growth of high-quality ZnO films on glass substrates by a new CVD method using a catalytic reaction, effec... [more] | EMD2015-15 CPM2015-25 OME2015-28 pp.23-27 |
| ED, CPM, SDM | 2015-05-28 16:05 |
Aichi | Venture Business Laboratory, Toyohashi University of Technology | Schottky barrier diodes of high mobility β-Ga2O3 (-201) single crystals grown by edge-defined-fed growth method Yuta Koga, Kazuya Harada, Kenji Hanada, Toshiyuki Oishi, Makoto Kasu (Saga Univ.) ED2015-22 CPM2015-7 SDM2015-24 |
High Hall electron mobility and its high performances of Schottky barrier diodes on edge-defined film-fed grown (2 ̅... [more] | ED2015-22 CPM2015-7 SDM2015-24 pp.31-34 |
| MWP | 2015-05-25 09:55 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Increase in sensitivity and bandwidth measurement of terahertz detector using high electron mobility transistor Safumi Suzuki, Takuro Nukariya, Yugo Ueda, Tomohiro Ootsuka, Masahiro Asada (Tokyo Tech) MWP2015-1 |
We propose and fabricated a high-electron-mobility-transistor (HEMT) terahertz detector integrated with bow-tie antenna ... [more] | MWP2015-1 pp.1-5 |
| WPT | 2015-02-13 13:30 |
Kanagawa | YRP center, 1st Bldg. | Introduction of Qualcomm Halo Wireless Electric Vehicle Charging Technology Kiyotaka Kawashima (Qualcomm Japan), Edward van Boheemen (QUALCOMM CDMA Technologies GmbH), Anthony Thomson (Qualcomm Europe) WPT2014-88 |
With an ever growing population & increasing urbanization, the need to reduce emissions from urban transport is pushing ... [more] | WPT2014-88 pp.1-6 |
| ED | 2014-12-22 15:00 |
Miyagi | Monte Carlo Simulation of InAlAs/InGaAs HEMTs with Various Shape of Buried Gate Akira Endoh (NICT/Fujitsu Labs.), Issei Watanabe, Akifumi Kasamatsu (NICT), Takashi Mimura (Fujitsu Labs./NICT) ED2014-102 |
To achieve higher-speed operations of InAlAs/InGaAs HEMTs, the gate-channel distance d as well as gate length Lg must be... [more] | ED2014-102 pp.21-26 |
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