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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 6 of 6  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2023-10-13
15:10		 Miyagi Niche, Tohoku Univ. [Invited Talk] statistical analysis of random telegraphic noise dependence on operating condition using electrical characteristic measurement platform
Takezo Mawaki, Rihito Kuroda (Tohoku Univ.) SDM2023-57		 We refer to the overall measurement system composed of array test circuits and other equipment as the electrical charact... [more] SDM2023-57
pp.21-26
EST 2022-01-28
09:30		 Online Online Characterization of Small Peripheral Nerve Responses to Intraepidermal Electrical Stimulation
Yuki Niimi, Gomez-Tames Jose, Toshiaki Wasaka, Akimasa Hirata (NITech) EST2021-79		 In recent years, there has been a lot of interest in selective stimulation of small peripheral nerve fibers (Aδ-fiber an... [more] EST2021-79
pp.110-115
SDM 2021-11-11
15:15		 Online Online [Invited Talk] Characterization techniques of plasma process-induced defect creation in electronic devices
Koji Eriguchi (Kyoto Univ.) SDM2021-57		 Plasma processing plays an important role in manufacturing leading-edge electronic devices. Plasma etching achieves fine... [more] SDM2021-57
pp.23-28
OPE, MW, IEE-EMT, MWP, EST, EMT, THz [detail] 2021-07-16
11:00		 Online Online A Study on Selective Stimulation of Peripheral Nerves by Intraepidermal Electrical Stimulation Using Nerve Modeling
Yuki Niimi, Gomez-Tames Jose, Toshiaki Wasaka, Akimasa Hirata (NITech) EMT2021-20 MW2021-25 OPE2021-14 EST2021-21 MWP2021-22		 In recent years, there has been a lot of interest in selective stimulation of small peripheral nerve fibers (Aδ-fiber an... [more] EMT2021-20 MW2021-25 OPE2021-14 EST2021-21 MWP2021-22
pp.70-75
SDM 2009-06-19
14:10		 Tokyo An401・402 Inst. Indus. Sci., The Univ. of Tokyo Electrical Characterization of High-k Gate Dielectrics on Ge with HfGeN and GeO2 Interlayers -- Formation of Insulator on Ge Substrate --
Hiroshi Nakashima, Kana Hirayama, Haigui Yang, Dong Wang (Kyushu Univ.) SDM2009-35		 We are searching MIS structure with good interface and insulating properties for high mobility Ge channel. Our approach... [more] SDM2009-35
pp.51-56
SDM, ED 2008-07-11
15:20		 Hokkaido Kaderu２・７ Characterization of Ni/i-AlGaN/GaN Schottky Samples Fabricated after H3PO4-Etching
Takayuki Sawada, Yuta Kaizuka, Kensuke Takahashi, Kazuaki Imai (Hokkaido Inst. of Tech.) ED2008-107 SDM2008-126		 Electrical properties of bare i-AlGaN/GaN and Ni/i-AlGaN/GaN Schottky samples with various thickness of the AlGaN layer,... [more] ED2008-107 SDM2008-126
pp.351-355
 Results 1 - 6 of 6  /   
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