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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM, OME | 2023-04-22 09:40 |
Okinawa | Okinawaken Seinen Kaikan (Primary: On-site, Secondary: Online) |
Solid-phase crystallization of Sn-doped Ge films on insulator and its application to TFT Taishiro Koga, Takaya Nagano, Kenta Moto, Keisuke Yamamoto, Taizoh Sadoh (Kyushu Univ.)  SDM2023-7 OME2023-7 |
High-speed thin-film transistors (TFTs) are required to realize advanced system-in-displays. For this purpose, Ge is att... [more] | SDM2023-7 OME2023-7 pp.27-29 |
| SDM, OME | 2023-04-22 13:35 |
Okinawa | Okinawaken Seinen Kaikan (Primary: On-site, Secondary: Online) |
[Invited Talk]
Crystallization technology of Si thin film by excimer laser annealing
-- Hoping to become some lesson from the past -- Hiroyuki Kuriyama (TTE) SDM2023-13 OME2023-13 |
Si thin film crystallization technology using an excimer laser was first put into practical use in 1996 as a core techno... [more] | SDM2023-13 OME2023-13 pp.48-51 |
| SDM, OME | 2023-04-22 15:00 |
Okinawa | Okinawaken Seinen Kaikan (Primary: On-site, Secondary: Online) |
[Invited Talk]
Metal induced lateral crystallization of amorphous Ge on insulating substrate Isao Tsunoda, Kenichiro Takakura (NIT, Kumamoto College) SDM2023-15 OME2023-15 |
We have investigated the low-temperature metal induced lateral crystallization of amorphous Ge on insulating substrate. ... [more] | SDM2023-15 OME2023-15 pp.55-58 |
| OME, SDM | 2022-04-23 10:20 |
Miyazaki | Takachiho Hall (Primary: On-site, Secondary: Online) |
EDX evaluation of Mg atoms on Mg-induced lateral crystallization of amorphous Ge/SiO2 Atsuki Morimoto, Rikuto Abe, Anna Hirai, Towa Hirai, Kenichiro Takakura, Isao Tsunoda (NIT(KOSEN),Kumamoto College) SDM2022-10 OME2022-10 |
We have investigated low temperature solid phase crystallization of amorphous Ge on insulating substrate. High temperatu... [more] | SDM2022-10 OME2022-10 pp.47-50 |
| SDM, OME | 2021-04-23 15:10 |
Okinawa | Okinawaken Seinen Kaikan (Primary: On-site, Secondary: Online) |
[Invited Talk]
Transistor application of polycrystalline Ge-based thin films Kaoru Toko (Univ. of Tsukuba) SDM2021-4 OME2021-4 |
With the development of Ge device technologies, a polycrystalline Ge thin-film transistor (TFT) is attracting a great de... [more] | SDM2021-4 OME2021-4 pp.15-18 |
| OME, IEE-DEI | 2021-03-01 16:30 |
Online | Online | Diode analysis of dark currents in crystallized small molecule organic photovoltaic cells Toshihiko Kaji, Fuka Enokido, Syou Mori, Masateru Yogo, Yuki Abe, Mikimasa Katayama (TUAT) OME2020-25 |
In this study, dark current diode analysis were discussed on various organic thin-film solar cells crystallized by co-ev... [more] | OME2020-25 pp.26-27 |
| SDM, OME | 2020-04-13 15:20 |
Okinawa | Okinawaken Seinen Kaikan (Cancelled, technical report was not issued) |
[Invited Talk]
Transistor application of polycrystalline Ge-based thin films Kaoru Toko (Univ. of Tsukuba) |
With the development of Ge device technologies, a polycrystalline Ge thin-film transistor (TFT) is attracting a great de... [more] | |
| SDM, EID, ITE-IDY [detail] | 2019-12-24 16:00 |
Nara | NAIST | Stable Growth of (100)-Oriented Low Angle Grain Boundary Silicon Thin Films Extending to the length of 3000 μm by a Continuous-Wave Laser Lateral Crystallization Muhammad Arif Razali, Nobuo Sasaki, Yasuaki Ishikawa, Yukiharu Uraoka (NAIST) |
The continuous wave laser lateral crystallization of amorphous-Si on quartz produces a {100}-oriented grain-boundary fre... [more] | |
| EID, SDM, ITE-IDY [detail] | 2018-12-25 11:00 |
Kyoto | Double-Gate Cu-MIC Poly-Ge TFT on Plastic Substrate Hiroki Utsumi (Tohoku Gakuin Univ.), Kuninori Kitahara, Shinya Tsukada (Shimane Univ.), Hitoshi Suzuki, Akito Hara (Tohoku Gakuin Univ.) EID2018-4 SDM2018-77 |
Polycrystalline-germanium (poly-Ge) thin-film transistor (TFT) with double gate (DG) structure was fabricated via metal ... [more] | EID2018-4 SDM2018-77 pp.1-4 |
|
| EID, SDM, ITE-IDY [detail] | 2018-12-25 13:15 |
Kyoto | Effects of SiOx Capping Film on Crystallization of Ge Film for Flash Lamp Annealing (Ⅱ) Yoshiki akita, Naoto Matsuo (Univ. of Hyogo), Kazuyuki Kohama, Kazuhiro Ito (Osaka Univ.) EID2018-5 SDM2018-78 |
We examined the effect of SiOx capping film on Ge films in FLA. The crystallinity was different between SPC and LPC. At ... [more] | EID2018-5 SDM2018-78 pp.17-20 |
|
| SDM | 2018-10-17 16:35 |
Miyagi | Niche, Tohoku Univ. | [Invited Talk]
Cr2Ge2Te6-Based PCRAM Showing Low Resistance Amorphous and High Resistance Crystalline States Shogo Hatayama, Yuji Sutou, Daisuke Ando, Junichi Koike (Tohoku Univ.) SDM2018-56 |
Phase change random access memory (PCRAM) has attracted much attention as one of next generation non-volatile memory. Ge... [more] | SDM2018-56 pp.21-26 |
| SAT, WBS (Joint) |
2018-05-25 11:05 |
Kagoshima | Kagoshima University | [Invited Talk]
Sonochemistry, harnessing ultrasound to chemistry Susumu Nii (Kagoshima Univ.) SAT2018-8 |
The lecture introduces sonochemistry, in which ultrasound is actively applied to chemistry in liquids to ignite unique c... [more] | SAT2018-8 pp.37-40 |
| SDM, EID | 2017-12-22 15:30 |
Kyoto | Kyoto University | Self-Aligned Double-Gate Cu-MIC Poly-GeSn TFT on a Glass Substrate Naoki Nishiguchi, Hiroki Utsumi, Akito Hara (Tohoku Gakuin Univ.) EID2017-24 SDM2017-85 |
Germanium tin (GeSn) is known as a new semiconductor device material. We used metal induced crystallization (MIC) using ... [more] | EID2017-24 SDM2017-85 pp.67-70 |
| SDM, OME | 2016-04-08 16:00 |
Okinawa | Okinawa Prefectural Museum & Art Museum | Non-thermal energy utilized low temperature solid phase crystallization of amorphous Ge on SiO2 substrate Kinta Kusano, Kazuki Kudo, Kodai Tomouchi, Taisei Sakaguchi, Kenta Moto (NIT, Kumamoto), Shinichi Motoyama, Yutaka Kusuda, Masahiro Furuta (SAMCO), Nobuyuki Naka, Tomoko Numata (HORIBA), Kenichiro Takakura, Isao Tsunoda (NIT, Kumamoto) SDM2016-8 OME2016-8 |
We have investigated the low-temperature SPC of amorphous Ge on insulating substrate. High temperature and long time ann... [more] | SDM2016-8 OME2016-8 pp.31-34 |
| SDM, OME | 2016-04-09 11:15 |
Okinawa | Okinawa Prefectural Museum & Art Museum | Self-Aligned Four-Terminal Metal Double-Gate LT Ni-SPC Poly-Si TFT with High-k Gate Stack Syota Nibe, Hiroki Ohsawa, Akito Hara (Tohoku Gakuin Univ.) SDM2016-15 OME2016-15 |
Self-aligned four-terminal (4T) metal double-gate (MeDG) low-temperature (LT) polycrystalline-silicon (poly-Si) thin fil... [more] | SDM2016-15 OME2016-15 pp.61-65 |
| OME, SDM | 2015-04-30 10:00 |
Okinawa | Oh-hama Nobumoto Memorial Hall | [Invited Talk]
Formation of high Sn content SiSn films and its band structure
-- Aiming for direct-band-gap semiconductor -- Masashi Kurosawa, Wakana Takeuchi, Mitsuo Sakashita, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2015-9 OME2015-9 |
This paper reports our recent progress in advanced Sn-assisted low-temperature crystallization methods for Si$_{1-x}$Sn$... [more] | SDM2015-9 OME2015-9 pp.35-37 |
| OME, SDM | 2015-04-30 10:40 |
Okinawa | Oh-hama Nobumoto Memorial Hall | Lateral solid-phase crystallization of a-GeSn on insulator for next generation flexible electronics Ryo Matsumura (Kyushu Univ./ JSPS), Hironori Chikita, Yuki Kai, Masaya Sasaki, Taizoh Sadoh, Hiroshi Ikenoue, Masanobu Miyao (Kyushu Univ.) SDM2015-10 OME2015-10 |
In order to realize next generation flexible electronics, high carrier mobility materials, such as GeSn, has to be cryst... [more] | SDM2015-10 OME2015-10 pp.39-40 |
| OME, SDM | 2015-04-30 13:25 |
Okinawa | Oh-hama Nobumoto Memorial Hall | Temperature Analysis of Si Films during Blue Multi-Laser Diode Annealing Tatsuya Okada, Seita Kamimura, Takashi Noguchi (Univ. Ryukyus) SDM2015-14 OME2015-14 |
We have reported that Blue Multi-Laser Diode Annealing (BLDA) is effective to crystallize Si films for next generation S... [more] | SDM2015-14 OME2015-14 pp.53-55 |
| SDM, EID | 2014-12-12 13:30 |
Kyoto | Kyoto University | Low-Temperature CLC Poly-Si TFTs with Sputtered HfO2 Gate Dielectric Layer Tatsuya Meguro, Akito Hara (Tohoku Gakuin Univ.) EID2014-23 SDM2014-118 |
To achieve high performance low-temperature (LT) polycrystalline-silicon (poly-Si) thin-film transistors (TFTs), high-k ... [more] | EID2014-23 SDM2014-118 pp.51-54 |
| SDM, OME | 2014-04-10 15:00 |
Okinawa | Okinawa-Ken-Seinen-Kaikan Bldg. | Influence of electron irradiation on Au-induced crystallization for amorphous Ge/SiO2-substrate Kenta Moto, Shin Sakiyama, Takatsugu Sakai, Kazutoshi Nakashima, Hayato Okamoto, Kenichiro Takakura, Isao Tsunoda (KNCT) SDM2014-5 OME2014-5 |
Au-induced crystallization for amorphous Ge（a-Ge）thin film on insulator is investigated as low-temperature crystallizati... [more] | SDM2014-5 OME2014-5 pp.21-25 |
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