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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 21 - 35 of 35 [Previous]  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
MW, ED 2013-01-18
13:50		 Tokyo Kikai-Shinko-Kaikan Bldg. Effects of Deep Trapping States at High Temperatures on Transient Performances of AlGaN/GaN HFETs
Kenichiro Tanaka, Masahiro Ishida, Tetsuzo Ueda, Tsuyoshi Tanaka (Panasonic) ED2012-124 MW2012-154		 Kinetic studies on the current collapse of a normally-off AlGaN/GaN heterostructure field effect transistor under a high... [more] ED2012-124 MW2012-154
pp.63-68
ED, LQE, CPM 2012-11-29
14:20		 Osaka Osaka City University Evaluation of transient current of GaN HEMTs on Si under light
Takuya Joka, Akio Wakejima, Takashi Egawa (NIT) ED2012-72 CPM2012-129 LQE2012-100		 We evaluated a transient response of a drain current (Id(t)) of an AlGaN/GaN HEMT on a Si substrate under light irradiat... [more] ED2012-72 CPM2012-129 LQE2012-100
pp.29-32
LQE, ED, CPM 2011-11-17
15:15		 Kyoto Katsura Hall，Kyoto Univ. Analysis of Recovery process in AlGaN/GaN HFET Current Collapse
Taishi Hosokawa, Yusuke Ikawa, Yusuke Kio, Jin-Ping Ao, Yasuo Ohno (Tokushima Univ./STS) ED2011-82 CPM2011-131 LQE2011-105		 The recovery process of AlGaN/GaN HFET current collapse is measured. From LED light irradiation experiments, it is estim... [more] ED2011-82 CPM2011-131 LQE2011-105
pp.43-48
CPM, SDM, ED 2011-05-20
16:40		 Aichi Nagoya Univ. (VBL) Current collapse in GaN-based HFETs -- HFETs on c- and a-GaN substrate/normally-off JHFET with p-GaN gate --
Takayuki Sugiyama, Yoshio Honda, Masahito Yamaguchi, Hiroshi Amano (Nagoya Univ.), Yasuhiro Isobe, Yoshinori Oshimura, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki (Meijo Univ.), Mamoru Imade, Yasuo Kitaoka, Yusuke Mori (Osaka Univ.) ED2011-34 CPM2011-41 SDM2011-47		 We measured current collapse in AlGaN/GaN HFETs on an a-plane GaN substrate. Non polar HFETs are promising for realizing... [more] ED2011-34 CPM2011-41 SDM2011-47
pp.175-178
MW, ED 2011-01-14
09:30		 Tokyo Kikai-Shinko-Kaikan Bldg. Current collapse characterization of AlGaN/GaN HEMTs using by dual-gate structure
Masafumi Tajima, Tamotsu Hashizume (Hokkaido Univ.) ED2010-182 MW2010-142		 By using a dual-gate structure, we have investigated impact of gate-stress position on the current collapse behavior of ... [more] ED2010-182 MW2010-142
pp.41-44
MW, ED 2011-01-14
09:55		 Tokyo Kikai-Shinko-Kaikan Bldg. Two-Dimensional Analysis of Backside-Electrode and Gate-Field-Plate Effects on Buffer-Related Current Collapse in AlGaN/GaN HEMTs
Hiraku Onodera, Atsushi Nakajima, Kazushige Horio (Shibaura Inst. Tech.) ED2010-183 MW2010-143		 Two-dimensional transient analysis of gate-field-plate AlGaN/GaN HEMTs with a backside electrode is performed in which a... [more] ED2010-183 MW2010-143
pp.45-50
CPM, LQE, ED 2010-11-12
10:50		 Osaka   Vertical GaN Diode on GaN Free-Standing Substrate
Shuichi Yagi, Shoko Hirata, Yasunobu Sumida, Masahiro Bessho, Hiroji Kawai (POWDEC), Toshiharu Matsueda, Akira Usui (Furukawa Co., Ltd.) ED2010-156 CPM2010-122 LQE2010-112		 We report the fabrication of schottky barrier diode (SBD) on GaN free-standing substrate. SBDs showed good DC operating... [more] ED2010-156 CPM2010-122 LQE2010-112
pp.63-66
ED, LQE, CPM 2009-11-20
11:20		 Tokushima Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) Analysis of AlGaN/GaN HFET Current Collapse By Step Stress Measurement
Kentaro Kuroda, Yusuke Ikawa, Kenta Mituyama, Jin-Ping Ao, Yasuo Ohno (The Univ of Tokushima) ED2009-151 CPM2009-125 LQE2009-130		 Current Collapse of AlGaN/GaN HFET is assumed that a negative charge in the device by Drain bias is a cause. The process... [more] ED2009-151 CPM2009-125 LQE2009-130
pp.109-114
SDM, ED 2008-07-09
11:40		 Hokkaido Kaderu２・７ [Invited Talk] AlGaN/GaN-based Electron Devices with Low-temperature GaN Cap Layer
Tadayoshi Deguchi (New Japan Radio), Takashi Egawa (Nagoya Inst. of Tech.) ED2008-41 SDM2008-60		 We review our studies on AlGaN/GaN-based electron devices with a low-temperature GaN (LT-GaN) cap layer, such as heteros... [more] ED2008-41 SDM2008-60
pp.9-14
SDM, ED 2008-07-11
14:50		 Hokkaido Kaderu２・７ AlGaN/GaN-HEMTs on SiC with SiN Passivation Film Grown by Thermal CVD
Hideyuki Okita, Shinichi Hoshi, Toshiharu Marui, Masanori Itoh, Fumihiko Toda, Yoshiaki Morino, Isao Tamai, Yoshiaki Sano, Shohei Seki (OKI Electric Industry) ED2008-105 SDM2008-124		 Current collapse phenomenon is a big obstacle in the AlGaN/GaN high electron mobility transistors (HEMTs), since they ha... [more] ED2008-105 SDM2008-124
pp.341-345
NC, MBE
(Joint)		 2008-03-12
10:20		 Tokyo Tamagawa Univ *
Mikihiro Nishijima, Takayuki Yamaguchi, Terunori Mori (Tamagawa Univ.) NC2007-131		 A review of psychophysical experiment was done and the big differences of their results are found. We set a suitable ne... [more] NC2007-131
pp.115-120
ED, MW 2008-01-16
13:50		 Tokyo Kikai-Shinko-Kaikan Bldg. Effects of a thermal CVD SiN passivation film on electrical characteristics of AlGaN/GaN HEMTs
Toshiharu Marui, Shinichi Hoshi, Yoshiaki Morino, Masanori Itoh, Isao Tamai, Fumihiko Toda, Hideyuki Okita, Yoshiaki Sano, Shohei Seki (OKI) ED2007-208 MW2007-139		 In AlGaN/GaN HEMTs, we used a thermal CVD SiN surface passivation film for suppressing the current collapse due to AlGaN... [more] ED2007-208 MW2007-139
pp.11-15
CPM, ED, LQE 2007-10-12
10:50		 Fukui Fukui Univ. Analysis of Buffer-Related Slow Current Transients and Current Collapse in AlGaN/GaN HEMTs
Atsushi Nakajima, Kazushige Horio (Shibaura Inst. Tech.) ED2007-169 CPM2007-95 LQE2007-70		 Two-dimensional transient analyses of AlGaN/GaN HEMTs are performed in which a deep donor and a deep acceptor are consid... [more] ED2007-169 CPM2007-95 LQE2007-70
pp.67-72
ED, MW 2006-01-19
10:20		 Tokyo Kikai-Shinko-Kaikan Bldg. Analysis of Slow Current Transients and Current Collapse in GaN FETs
Hiroki Takayanagi, Keiichi Itagaki, Hiroyuki Nakano, Kazushige Horio (Shibaura Inst. Tech.) 		Two-dimensional transient analyses of GaN MESFETs are performed in which a deep donor and a deep acceptor in a semi-insu... [more] ED2005-199 MW2005-153
pp.1-6
ED, MW 2006-01-19
13:20		 Tokyo Kikai-Shinko-Kaikan Bldg. AlGaN/GaN HFETs with a low-temperature GaN cap layer
Tadayoshi Deguchi, Eiji Waki, Satoru Ono, Meiichi Yamashita, Atsushi Kamada, Atsushi Nakagawa (New Japan Radio), Hiroyasu Ishikawa, Takashi Egawa (Nagoya Institute of Technology) 		AlGaN/GaN heterostructure field-effect transistors (HFETs) with a highly resistive, low-temperature GaN (LT-GaN) cap lay... [more] ED2005-203 MW2005-157
pp.23-27
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