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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| LQE, EST, OPE, EMT, PN, MWP, IEE-EMT, PEM [detail] | 2016-01-28 10:55 |
Hyogo | Characterization of 1.3-μm npn-AlGaInAs/InP Transistor Laser with Buried Heterostructure Shotaro Tadano, Takaaki Kaneko, Kentaro Yamanaka, Nobuhiko Nishiyama, Shigehisa Arai (Tokyo Tech)  PN2015-38 EMT2015-89 OPE2015-151 LQE2015-138 EST2015-95 MWP2015-64 |
Since a long-wavelength transistor lasers（TL）has 3 electrical terminals, which are different from the conventional LDs, ... [more] | PN2015-38 EMT2015-89 OPE2015-151 LQE2015-138 EST2015-95 MWP2015-64 pp.21-26 |
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| CPM, OPE, LQE, R, EMD | 2015-08-28 09:35 |
Aomori | Aomori-Bussankan-Asupamu | Analysis of heat dissipation and evaluation of current reduction of 1.3 μm wavelength InGaAlAs BH laser Takahiko Shindo, Wataru Kobayashi, Yoshihiro Ogiso, Naoki Fujiwara, Ryuzo Iga, Yoshitaka Ohiso, Hiroyuki Ishii (NTT) R2015-37 EMD2015-45 CPM2015-61 OPE2015-76 LQE2015-45 |
The 1.3 μm wavelength InGaAlAs directly modulated semiconductor laser is a promising candidate as a high-speed semicondu... [more] | R2015-37 EMD2015-45 CPM2015-61 OPE2015-76 LQE2015-45 pp.73-76 |
| LQE | 2012-12-13 11:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Ultra-high-speed direct modulation of AlGaInAs semi-insulating buried-heterostructure distributed-reflector lasers Takasi Simoyama, Manabu Matsuda, Shigekazu Okumura, Ayahito Uetake, Mitsuru Ekawa, Tsuyoshi Yamamoto (Fujitsu Labs.) LQE2012-124 |
AlGaInAs-MQW distributed reflector (DR) laser with semi-insulating buried-heterostructure (SI-BH) has been developed as ... [more] | LQE2012-124 pp.15-18 |
| LQE | 2010-12-17 13:10 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Encouragement Talk]
AlGaInAs semi-insulating buried-heterostructure (SI-BH) distributed-reflector (DR) lasers for low-driving-current 40-Gbps direct modulation Ayahito Uetake, Koji Otsubo, Manabu Matsuda (PETRA/Fujitsu/Fujitsu labs.), Shigekazu Okumura (Fujitsu labs.), Mitsuru Ekawa, Tsuyoshi Yamamoto (PETRA/Fujitsu/Fujitsu labs.) LQE2010-120 |
Because of recent significant increase of data traffic, much attention has been paid to high-speed optical transmitters.... [more] | LQE2010-120 pp.27-32 |
| LQE | 2009-12-11 14:40 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | AlGaInAs semi-insulating buried-heterostructure (SI-BH) distributed-reflector (DR) lasers for low-driving-current 40-Gbps direct modulation Ayahito Uetake, Koji Otsubo, Manabu Matsuda (OITDA/Fujitsu/Fujitsu Laboratories), Shigekazu Okumura (Fujitsu Laboratories), Mitsuru Ekawa, Tsuyoshi Yamamoto (OITDA/Fujitsu/Fujitsu Laboratories) LQE2009-148 |
Because of recent significant increase of data traffic, much attention has been paid to high-speed optical transmitters.... [more] | LQE2009-148 pp.51-56 |
| OPE, LQE | 2006-06-30 10:10 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | 100℃ 10-Gb/s operation of 1.3-μm InGaAsP DFB lasers with Ru-doped semi-insulating buried heterostructure Ryuzo Iga, Yasuhiro Kondo, Tatsuya Takeshita, Kenji Kishi, Masahiro Yuda (NTT) |
We fabricated 1.3-um InGaAsP DFB lasers buried with a high-resistive ruthenium (Ru)-doped InP and evaluated 10Gb/s opera... [more] | OPE2006-16 LQE2006-20 pp.7-10 |
| OPE | 2006-02-17 16:05 |
Tokyo | Uncooled AlGaInAs-MQW-FP-LD with Ruthenium doped semi-insulating InP buried hetero-structure Kiyotaka Tsuruoka, Ryuji Kobayashi, Koichi Naniwae, Keiichi Tokutome, , Tomoaki Kato (NEC) |
We have developed the first 1.3-μm AlGaInAs-MQW-FP-LD with ruthenium (Ru) doped InP buried heterostructure by narrow-str... [more] | OPE2005-153 pp.41-46 |
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