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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ED | 2014-08-01 15:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg. B3-1 | Band offset at Al2O3/β-Ga2O3 Heterojunctions Takafumi Kamimura (NICT), Kohei Sasaki (Tamura Corp.), Man Hoi Wong, Daivasigamani Krishnamurthy (NICT), Akito Kuramata (Tamura Corp.), Takekazu Masui (Koha Co., Ltd.), Shigenobu Yamakoshi (Tamura Corp.), Masataka Higashiwaki (NICT)  ED2014-60 |
The band alignment of Al2O3/n-Ga2O3 (010) was investigated by x-ray photoelectron spectroscopy (XPS). With a band gap of... [more] | ED2014-60 pp.41-46 |
| SDM | 2011-07-04 14:00 |
Aichi | VBL, Nagoya Univ. | Photoemission Study of Chemical Bonding Features at Metal/GeO2 Interfaces Masafumi Matsui, Tomohiro Fujioka, Akio Ohta, Hideki Murakami, Seiichiro Higashi (Hiroshima Univ.), Seiichi Miyazaki (Nagoya Univ.) SDM2011-61 |
We have investigated chemical bonding features at thermally-grown GeO2/Ge(100) and metals (Al, Au and Pt)/GeO2 interface... [more] | SDM2011-61 pp.63-68 |
| ED | 2010-06-17 15:50 |
Ishikawa | JAIST | Effects of surface oxidation during device processing on surface barrier height of AlGaN/GaN HFETs Masataka Higashiwaki (NICT/JST/UCSB), Srabanti Chowdhury, Brian L. Swenson, Umesh K. Mishra (UCSB) ED2010-39 |
We investigated effects of surface oxidation by annealing during device process on AlGaN surface barrier height of AlGaN... [more] | ED2010-39 pp.31-35 |
| OME | 2009-01-21 12:40 |
Aichi | Ｎａｇｏｙａ Ｕｎｉｖ． | XPS Analysis of the Interface between Transparent Electrode and Organic Layers in Organic Light-Emitting Devices Toshikazu Satoh, Hisayoshi Fujikawa (Toyota Central R&D Labs.,), Ichiro Yamamoto, Takanori Murasaki, Yoshifumi Kato (Toyota Ind Co.) OME2008-86 |
X-ray photoelectron spectroscopy (XPS) of thin organic layers deposited on indium tin oxide (ITO) was taken place to inv... [more] | OME2008-86 pp.23-28 |
| SDM | 2008-06-10 10:30 |
Tokyo | An401・402, Inst. Indus. Sci., The Univ. of Tokyo | Backside X-ray Photoelectron Spectroscopy of Ru/HfSiON Gate Stack
-- Origin of Change in Effective Work Function of Ru -- Taiki Mori, Akio Ohta, Hiromichi Yoshinaga, Seiichi Miyazaki (Hiroshima Univ.), Masaru Kadoshima, Yasuo Nara (Selete) SDM2008-50 |
2.5nm-thick HfSiON layers were deposited on thermally-grown SiO2 in the thickness range of 1 to 6nm or 0.7nm-thick SiON ... [more] | SDM2008-50 pp.47-52 |
| SDM | 2008-06-10 11:20 |
Tokyo | An401・402, Inst. Indus. Sci., The Univ. of Tokyo | XPS Study of TiAlN/HfSiON Gate Stack
-- Reduction of Effective Work Function Change Induced by Al Diffusion -- Akio Ohta, Taiki Mori, Hiromichi Yoshinaga, Seiichi Miyazaki (Hiroshima Univ.), Masaru Kadoshima, Yasuo Nara (Selete) SDM2008-52 |
~30nm-thick TiAlN and TiN gate were deposited on HfSiON/SiO2/Si(100) stack structure and followed by anneal at 1000º... [more] | SDM2008-52 pp.59-64 |
| SDM | 2007-06-07 14:45 |
Hiroshima | Hiroshima Univ. ( Faculty Club) | Depth Profiling of Chemical Composition and Defect State Density of SiNx Formed by Plasma CVD Masahi Miura, Akio Ohta, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima Univ.), Masayuki Kohno, Tatsuo Nishida, Toshio Nakanishi (TEL) SDM2007-34 |
The depth profiling of chemical composition and defect state density in tensile- and compressive-SiNx films formed on ch... [more] | SDM2007-34 pp.17-22 |
| SDM | 2007-06-08 14:15 |
Hiroshima | Hiroshima Univ. ( Faculty Club) | Evaluation of Thermal Stability of HfO2/SiONx/Ge(100) Stacked Structures using by Photoemission Spectroscopy Akio Ohta, Hiroshi Nakagawa, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima Univ.) SDM2007-48 |
~2.7nm-thick HfO2 films were formed by electron beam (EB) evaporation in O2 ambience on ultrathin SiONx/Ge(100) stack st... [more] | SDM2007-48 pp.91-96 |
| ED, CPM, LQE | 2006-10-05 15:45 |
Kyoto | Estimation of AlGaN/GaN HFET surface barrier height with Cat-CVD SiN passivation by XPS and C-V measurements Norio Onojima, Masataka Higashiwaki (NICT), Jun Suda, Tsunenobu Kimoto (Kyoto Univ.), Takashi Mimura (NICT/Fujitsu Lab.), Toshiaki Matsui (NICT) |
AlGaN surface barrier heights in AlGaN/GaN heterostructure field-effect transistors (HFETs) with and without SiN passiva... [more] | ED2006-158 CPM2006-95 LQE2006-62 pp.35-38 |
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| SDM | 2006-06-21 16:25 |
Hiroshima | Faculty Club, Hiroshima Univ. | Evaluation of Chemical Structures and Work Function of NiSi near the Interface between NiSi and SiO2 Hiromichi Yoshinaga, Daisuke Azuma, Hideki Murakami, Akio Ohta, Yuuki Munetaka, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima Univ.), Takayuki Aoyama, Kimihiko Hosaka (Fujitsu Laboratories Ltd.), Kentaro Shibahara (Hiroshima Univ.) |
Impurity (Sb, P, B or As)-implanted Ni-silicides formed on thermally-grown SiO2 were characterized by Raman scattering s... [more] | SDM2006-49 pp.43-48 |
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