IEICE Technical Committee Submission System
Conference Schedule		 Online Proceedings
[Sign in]
Tech. Rep. Archives
    [Japanese] / [English] 
( Committee/Place/Topics  ) --Press->
 
( Paper Keywords:  /  Column:Title Auth. Affi. Abst. Keyword ) --Press->

All Technical Committee Conferences  (Searched in: All Years)

Search Results: Conference Papers
 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 21 - 25 of 25 [Previous]  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2007-06-08
14:15		 Hiroshima Hiroshima Univ. ( Faculty Club) Evaluation of Thermal Stability of HfO2/SiONx/Ge(100) Stacked Structures using by Photoemission Spectroscopy
Akio Ohta, Hiroshi Nakagawa, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima Univ.) SDM2007-48		 ~2.7nm-thick HfO2 films were formed by electron beam (EB) evaporation in O2 ambience on ultrathin SiONx/Ge(100) stack st... [more] SDM2007-48
pp.91-96
ED, CPM, LQE 2006-10-05
15:45		 Kyoto   Estimation of AlGaN/GaN HFET surface barrier height with Cat-CVD SiN passivation by XPS and C-V measurements
Norio Onojima, Masataka Higashiwaki (NICT), Jun Suda, Tsunenobu Kimoto (Kyoto Univ.), Takashi Mimura (NICT/Fujitsu Lab.), Toshiaki Matsui (NICT) 		AlGaN surface barrier heights in AlGaN/GaN heterostructure field-effect transistors (HFETs) with and without SiN passiva... [more] ED2006-158 CPM2006-95 LQE2006-62
pp.35-38
SDM 2006-06-21
13:25		 Hiroshima Faculty Club, Hiroshima Univ. Photoelectron Spectroscopy of HfO2/Ge(100) stacked structure
Hiroshi Nakagawa, Akio Ohta, Hiroyuki Abe, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima Univ.) 		Ultrathin hafnium oxides (~5.4nm in thickness) evaporated on wet-chemically cleaned Ge(100) were annealed at 550ºC ... [more] SDM2006-43
pp.7-12
SDM 2006-06-21
16:25		 Hiroshima Faculty Club, Hiroshima Univ. Evaluation of Chemical Structures and Work Function of NiSi near the Interface between NiSi and SiO2
Hiromichi Yoshinaga, Daisuke Azuma, Hideki Murakami, Akio Ohta, Yuuki Munetaka, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima Univ.), Takayuki Aoyama, Kimihiko Hosaka (Fujitsu Laboratories Ltd.), Kentaro Shibahara (Hiroshima Univ.) 		Impurity (Sb, P, B or As)-implanted Ni-silicides formed on thermally-grown SiO2 were characterized by Raman scattering s... [more] SDM2006-49
pp.43-48
CPM 2005-11-12
11:20		 Fukui   Preparation of ZnS Thin Films by Chemical Bath Method -- Effects of Adding Hydrazine Monohydrate --
Masakazu Hiruta, Satoshi Kobayashi, Nozomu Tsuboi, Futao Kaneko (Niigata Univ.) 		Abstract ZnS thin films are prepared on glass substrates by chemical bath deposition (CBD) technique using the reactiv... [more] CPM2005-166
pp.21-25
 Results 21 - 25 of 25 [Previous]  /   
Choose a download format for default settings. [NEW !!]
Text format pLaTeX format CSV format BibTeX format
Copyright and reproduction : All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)

[Return to Top Page]

[Return to IEICE Web Page]
The Institute of Electronics, Information and Communication Engineers (IEICE), Japan