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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2017-06-20 16:50 |
Tokyo | Campus Innovation Center Tokyo | Formation of Ultrathin Crystalline Structure of Group-IV Elements on Epitaxial Ag(111) Surface Koichi Ito, Akio Ohta, Masashi Kurosawa, Masaaki Araidai, Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ.)  SDM2017-30 |
Two dimensional (2D) honeycomb crystals such as silicene and germanene are currently receiving much attention because of... [more] | SDM2017-30 pp.43-48 |
| SDM | 2016-06-29 14:10 |
Tokyo | Campus Innovation Center Tokyo | XPS Study on Potential Change and Electrical Dipole at SiO2/Semiconductor Interface Nobuyuki Fujimura, Akio Ohta, Hiromasa Watanabe, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ.) SDM2016-40 |
An evaluation method for estimating the valence band (VB) top from the vacuum level (VL) for semiconductors and dielectr... [more] | SDM2016-40 pp.43-47 |
| SDM | 2015-06-19 11:10 |
Aichi | VBL, Nagoya Univ. | [Invited Lecture]
Characteristics of nitrogen incorporation at SiC/SiO2 interface on Si-face and C-face 4H-SiC Daisuke Mori, Kei Inoue, Hideaki Teranishi, Takayuki Hirose, Aki Takigawa (Fuji Electric) SDM2015-42 |
The chemical bonding states of Si and N at nitrided SiC/SiO2 interface were characterized by synchrotron radiation X-ray... [more] | SDM2015-42 pp.21-26 |
| SDM | 2014-10-17 10:40 |
Miyagi | Niche, Tohoku Univ. | Initial stage of oxidation on 4H-SiC by AR-XPS using angle-resolved X-ray photoelectron spectroscopy Tomoya Sasago, Shunta Yamahori, Hiroshi Nohira (Tokyo City Univ.) SDM2014-90 |
We have investigated the initial stage of oxidation on C-face 4H-SiC using angle-resolved X-ray photoelectron spectrosco... [more] | SDM2014-90 pp.35-39 |
| ED | 2014-08-01 15:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg. B3-1 | Band offset at Al2O3/β-Ga2O3 Heterojunctions Takafumi Kamimura (NICT), Kohei Sasaki (Tamura Corp.), Man Hoi Wong, Daivasigamani Krishnamurthy (NICT), Akito Kuramata (Tamura Corp.), Takekazu Masui (Koha Co., Ltd.), Shigenobu Yamakoshi (Tamura Corp.), Masataka Higashiwaki (NICT) ED2014-60 |
The band alignment of Al2O3/n-Ga2O3 (010) was investigated by x-ray photoelectron spectroscopy (XPS). With a band gap of... [more] | ED2014-60 pp.41-46 |
| SDM | 2013-10-18 10:30 |
Miyagi | Niche, Tohoku Univ. | Introduction of the Bias Operation Hard X-ray Photoelectron Spectroscopy: Evaluation for Insulator/Si interface Norihiro Ikeno, Kohki Nagata (Meiji Univ.), Hiroshi Oji, Ichiro Hirosawa (JASRI), Atsushi Ogura (Meiji Univ.) SDM2013-94 |
(To be available after the conference date) [more] | SDM2013-94 pp.33-36 |
| SDM | 2012-06-21 15:05 |
Aichi | VBL, Nagoya Univ. | Detection of impurities having various chemical bonding states and their depth profiles in ultra shallow junctions Kazuo Tsutsui, Jun Kanehara, Youhei Miyata (Tokyo Tech.), Hiroshi Nohira (Tokyo City Univ.), Yudai Izumi, Takayuki Muro, Toyohiko Kinoshita (JASRI), Parhat Ahmet, Kuniyuki Kakushima, Takeo Hattori, Hiroshi Iwai (Tokyo Tech.) SDM2012-56 |
Depth profiles of impurity having different chemical bonding states were evaluated by using soft x-ray photoelectron spe... [more] | SDM2012-56 pp.69-74 |
| SDM | 2011-10-21 09:00 |
Miyagi | Tohoku Univ. (Niche) | [Invited Talk]
Study of HfO2/Si/strained-Ge/SiGe using Angle Resolved x-ray Photoelectron Spectroscopy Hiroshi Nohira, Arata Komatsu, Kentarou Nasu, Yusuke Hoshi, Toru Kurebayashi, Kentaro Sawano (Tokyo City Univ.), M. Myronov (Univ. of Warwick), Yasuhiro Shiraki (Tokyo City Univ.) SDM2011-103 |
We have investigated the influence of Si-cap layer and the post deposition annealing (PDA) on compositional depth profil... [more] | SDM2011-103 pp.37-41 |
| SDM | 2011-07-04 14:00 |
Aichi | VBL, Nagoya Univ. | Photoemission Study of Chemical Bonding Features at Metal/GeO2 Interfaces Masafumi Matsui, Tomohiro Fujioka, Akio Ohta, Hideki Murakami, Seiichiro Higashi (Hiroshima Univ.), Seiichi Miyazaki (Nagoya Univ.) SDM2011-61 |
We have investigated chemical bonding features at thermally-grown GeO2/Ge(100) and metals (Al, Au and Pt)/GeO2 interface... [more] | SDM2011-61 pp.63-68 |
| SDM | 2010-12-17 15:10 |
Kyoto | Kyoto Univ. (Katsura) | Irradiation Effects of Silicon Surface by Polyatomic Ion Beams Mitsuaki Takeuchi, Hiromichi Ryuto, Gikan H. Takaoka (Kyoto Univ.) SDM2010-197 |
C$_{3}$H$_{7}^{+}$}\ and C$_{6}$H$_{13}^{+}$\ polyatomic ion beams generated from n-octane were irradiated with 1 keV/CH... [more] | SDM2010-197 pp.69-72 |
| CPM, LQE, ED | 2010-11-12 10:25 |
Osaka | Study of etching-induced damage in p-type GaN by hard X-ray photoelectron spectroscopy Daigo Kikuta, Tetsuo Narita, Naoko Takahashi, Keita Kataoka, Yasuji Kimoto, Tsutomu Uesugi, Tetsu Kachi (Toyota CRDL, Inc.), Masahiro Sugimoto (Toyota Motor Corp.) ED2010-155 CPM2010-121 LQE2010-111 |
We carried out nondestructive measurements of the depth profile of etching-induced damage in p-GaN, in particular surfac... [more] | ED2010-155 CPM2010-121 LQE2010-111 pp.59-62 |
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| ED | 2010-06-17 15:50 |
Ishikawa | JAIST | Effects of surface oxidation during device processing on surface barrier height of AlGaN/GaN HFETs Masataka Higashiwaki (NICT/JST/UCSB), Srabanti Chowdhury, Brian L. Swenson, Umesh K. Mishra (UCSB) ED2010-39 |
We investigated effects of surface oxidation by annealing during device process on AlGaN surface barrier height of AlGaN... [more] | ED2010-39 pp.31-35 |
| SDM | 2009-06-19 16:50 |
Tokyo | An401・402 Inst. Indus. Sci., The Univ. of Tokyo | Characterization of La Diffusion into HfO2/SiO2 Stacked Layers from Ultrathin LaOx Akio Ohta, Daisuke Kanme, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima Univ.) SDM2009-42 |
A stack structure consisting of ~1.3nm-thick LaOx and ~4.0nm-thick HfO2 was formed on thermally grown SiO2 on Si(100) by... [more] | SDM2009-42 pp.87-92 |
| SDM | 2009-06-19 17:00 |
Tokyo | An401・402 Inst. Indus. Sci., The Univ. of Tokyo | Characterization of Chemical Bonding Features and Electronic States at TiO2/Pt Interface Yuta Goto, Daisuke Kanme, Akio Ohta, Guobin Wei, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima University) SDM2009-44 |
We focused on the interfacial reaction between TiO2 and Pt to gain a better understanding of the mechanism of resistive ... [more] | SDM2009-44 pp.99-103 |
| OME | 2009-01-21 12:40 |
Aichi | Ｎａｇｏｙａ Ｕｎｉｖ． | XPS Analysis of the Interface between Transparent Electrode and Organic Layers in Organic Light-Emitting Devices Toshikazu Satoh, Hisayoshi Fujikawa (Toyota Central R&D Labs.,), Ichiro Yamamoto, Takanori Murasaki, Yoshifumi Kato (Toyota Ind Co.) OME2008-86 |
X-ray photoelectron spectroscopy (XPS) of thin organic layers deposited on indium tin oxide (ITO) was taken place to inv... [more] | OME2008-86 pp.23-28 |
| SDM | 2008-10-10 16:15 |
Miyagi | Tohoku Univ. | Study on Compositional Transition Layers at Gate Dielectrics/Si Interface by using Angle-resolved X-ray Photoelectron Spectroscopy Tomoyuki Suwa (Tohoku Univ.), Takashi Aratani (Shin-Etsu Chemi.), Masaaki Higuchi (Toshiba), Shigetoshi Sugawa (Tohoku Univ.), Eiji Ikenaga (JASRI), Jiro Ushio (Hitachi), Hiroshi Nohira (Musashi Inst. of Tech.), Akinobu Teramoto, Tadahiro Ohmi, Takeo Hattori (Tohoku Univ.) SDM2008-167 |
Soft x-ray-excited angle-resolved photoemission results for nitride films formed using nitrogen-hydrogen radicals on Si(... [more] | SDM2008-167 pp.69-74 |
| SDM | 2008-06-10 10:30 |
Tokyo | An401・402, Inst. Indus. Sci., The Univ. of Tokyo | Backside X-ray Photoelectron Spectroscopy of Ru/HfSiON Gate Stack
-- Origin of Change in Effective Work Function of Ru -- Taiki Mori, Akio Ohta, Hiromichi Yoshinaga, Seiichi Miyazaki (Hiroshima Univ.), Masaru Kadoshima, Yasuo Nara (Selete) SDM2008-50 |
2.5nm-thick HfSiON layers were deposited on thermally-grown SiO2 in the thickness range of 1 to 6nm or 0.7nm-thick SiON ... [more] | SDM2008-50 pp.47-52 |
| SDM | 2008-06-10 11:20 |
Tokyo | An401・402, Inst. Indus. Sci., The Univ. of Tokyo | XPS Study of TiAlN/HfSiON Gate Stack
-- Reduction of Effective Work Function Change Induced by Al Diffusion -- Akio Ohta, Taiki Mori, Hiromichi Yoshinaga, Seiichi Miyazaki (Hiroshima Univ.), Masaru Kadoshima, Yasuo Nara (Selete) SDM2008-52 |
~30nm-thick TiAlN and TiN gate were deposited on HfSiON/SiO2/Si(100) stack structure and followed by anneal at 1000º... [more] | SDM2008-52 pp.59-64 |
| SDM | 2007-06-07 14:45 |
Hiroshima | Hiroshima Univ. ( Faculty Club) | Depth Profiling of Chemical Composition and Defect State Density of SiNx Formed by Plasma CVD Masahi Miura, Akio Ohta, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima Univ.), Masayuki Kohno, Tatsuo Nishida, Toshio Nakanishi (TEL) SDM2007-34 |
The depth profiling of chemical composition and defect state density in tensile- and compressive-SiNx films formed on ch... [more] | SDM2007-34 pp.17-22 |
| SDM | 2007-06-08 11:20 |
Hiroshima | Hiroshima Univ. ( Faculty Club) | Effects of Nitrogen Incorporaton into La2O3 using Nitrogen Radicals Soshi Sato, Kiichi Tachi, Jaeyeol Song, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Nobuyuki Sugii, Takeo Hattori, Hiroshi Iwai (Tokyo Tech.) SDM2007-44 |
This work reports the influence of nitridation on structural and electrical properties of La2O3 gate dielectric films. T... [more] | SDM2007-44 pp.71-74 |
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