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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM, ICD | 2013-08-01 13:00 |
Ishikawa | Kanazawa University | [Invited Talk]
Tera-Scale Three-Dimensional Integration (3DI) using Bumpless TSV Interconnects Takayuki Ohba (Tokyo Inst. of Tech.)  SDM2013-70 ICD2013-52 |
In combination with 3D logic, memory, and cooling devices, it is possible to construct a roadmap towards high-density in... [more] | SDM2013-70 ICD2013-52 pp.29-30 |
| LQE, OPE | 2013-06-21 11:25 |
Tokyo | MOVPE growth realized on heterogeneous substrate employing directly-bonded InP template Keiichi Matsumoto, Xinxin Zhang, Yoshinori Kanaya, Kazuhiko Shimomura (Sophia Univ.) OPE2013-9 LQE2013-19 |
Integrating III-V materials which enables high-speed computer with large-capacity on Si has been required. Therefore, we... [more] | OPE2013-9 LQE2013-19 pp.13-18 |
|
| OPE | 2012-12-21 16:45 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Characteristics of InP-based passive devices of Si substrate with BCB adhesive wafer bonding for on-chip interconnects Jieun Lee, Yoshiaki Yamahara, Yuki Atsumi, Nobuhiko Nishiyama (TiTech), Shigehisa Arai (TiTech/QNERC) OPE2012-141 |
For InP-based membrane photonic circuits on Si-LSI, a GaInAsP wire waveguide and basic functional passive devices based ... [more] | OPE2012-141 pp.39-44 |
| LQE | 2012-12-13 13:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Encouragement Talk]
Advances in Quantum Dot Lasers on Silicon Substrates by Wafer Bonding Katsuaki Tanabe, Yasuhiko Arakawa (Univ. Tokyo) LQE2012-128 |
III-V semiconductor compound light sources monolithically integrated on Si substrates or waveguides would be promising f... [more] | LQE2012-128 pp.31-33 |
| SDM, ED (Workshop) |
2012-06-27 14:00 |
Okinawa | Okinawa Seinen-kaikan | A chip scale wafer level packaging for LED using surface aligning technique. Jin Kwan Kim, Hee Chul Lee (KAIST) |
A silicon based wafer level packaging (WLP) for LED, which can be adopted for chip scale package and batch process witho... [more] | |
| SDM | 2012-03-05 15:55 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Characterization of Local Strain around Through Silicon Via Interconnect in Wafer-on-wafer Structures Osamu Nakatsuka (Nagoya Univ.), Hideki Kitada, Young Suk Kim (Univ. of Tokyo), Yoriko Mizushima, Tomoji Nakamura (Fujitsu Lab.), Takayuki Ohba (Univ. of Tokyo), Shigeaki Zaima (Nagoya Univ.) SDM2011-184 |
We have investigated the local strain structure in a thinned Si layer stacked on Si substrate for wafer-on-a-wafer appli... [more] | SDM2011-184 pp.47-52 |
| ICD, IPSJ-ARC | 2011-01-20 14:20 |
Kanagawa | Keio University (Hiyoshi Campus) | [Invited Talk]
CMOS Hyper-Miniaturization and Cooperation with 3D System Design Integration Kazuya Okamoto, Ryohei Satoh (Osaka Univ.) |
Miniaturization technology based on Dennard’s rule for CMOS devices has been progressing technically over time and has c... [more] | ICD2010-131 p.29 |
| EMD, OPE, LQE, CPM | 2010-08-27 16:55 |
Hokkaido | Chitose Arcadia Plaza | 1.3um InAs/GaAs Quantum Dot Lasers on Si Substrates by Wafer Bonding Katsuaki Tanabe, Denis Guimard, Damien Bordel, Satoshi Iwamoto, Yasuhiko Arakawa (Univ. of Tokyo.) EMD2010-59 CPM2010-75 OPE2010-84 LQE2010-57 |
III-V semiconductor compounds light sources monolithically formed on Si substrates or waveguides would be promising for ... [more] | EMD2010-59 CPM2010-75 OPE2010-84 LQE2010-57 pp.153-156 |
| ED, SDM | 2010-06-30 12:50 |
Tokyo | Tokyo Inst. of Tech. Ookayama Campus | [Invited Talk]
Applications of Smart Cut(TM) Technologies to III-V Based Engineered Substrates Makoto Yoshimi (Soitec) ED2010-54 SDM2010-55 |
Smart Cut technology is now widely used to fabricate SOI (silicon-on-insulator) technologies targeting MPUs, RF devices,... [more] | ED2010-54 SDM2010-55 pp.21-22 |
| ED, CPM, SDM | 2006-05-19 09:25 |
Aichi | VBL, Toyohashi University of Technology | Heteroepitaxy of GaN for Si-GaN OEIC Tatsuya Kawano, Susumu Hatakenaka, Mikinori Itoh, Akihiro Wakahara, Hiroshi Okada, Makoto Ishida (Toyohashi Univ. Tech.) |
A novel Si/GaN/g-Al2O3/Si structure by which both Si-LSI(Large scale integrated circuit) and GaN-based optical devices c... [more] | ED2006-30 CPM2006-17 SDM2006-30 pp.55-60 |
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