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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2024-02-21 15:50 |
Tokyo | Tokyo University-Hongo-Engineering Bldg.4 (Primary: On-site, Secondary: Online) |
[Invited Talk]
Recent Studies of WoW and CoW Cu-Cu Hybrid Bonding Yoshihisa Kagawa, Yukako Ikegami, Takahiro Kamei, Hayato Iwamoto (SSS)  SDM2023-87 |
In recent years, a variety of 3D stacked devices have been proposed. The Cu-Cu hybrid bonding that can realize high dens... [more] | SDM2023-87 pp.31-35 |
| LQE, OPE, CPM, EMD, R | 2023-08-25 09:50 |
Miyagi | Tohoku university (Primary: On-site, Secondary: Online) |
[Invited Talk]
Progress and Future Prospect of Photonic Integrated Devices using InP Chip/SOI Wafer Bonding Technique Hideki Yagi (PETRA), Nobuhiko Nishiyama (Tokyo Tech), Naoki Fujiwara, Masaki Yanagisawa (PETRA) R2023-28 EMD2023-23 CPM2023-33 OPE2023-72 LQE2023-19 |
The development of beyond fifth-generation (5G) and sixth-generation (6G) mobile communication systems is accelerating t... [more] | R2023-28 EMD2023-23 CPM2023-33 OPE2023-72 LQE2023-19 pp.59-62 |
| SDM | 2023-02-07 14:00 |
Tokyo | Tokyo Univ. (Primary: On-site, Secondary: Online) |
[Invited Talk]
Applications of the surface activated bonding on heterogeneous Integration at room temperature Tadatomo Suga (Meisei Univ.) SDM2022-89 |
The potential application of surface-activated junction (SAB) to semiconductor 3D hetero-integration is presented. In pa... [more] | SDM2022-89 pp.17-22 |
| OPE, OCS, LQE | 2022-10-21 14:35 |
Ehime | (Primary: On-site, Secondary: Online) |
Low energy direct modulation of a 5-um-long active region on Si DBR laser Erina Kanno, Koji Takeda, Takuro Fujii, Takaaki Kakitsuka, Shinji Matsuo (NTT) OCS2022-36 OPE2022-82 LQE2022-45 |
In order to introduce optical interconnects into short-distance interconnects, ultra-low power consumption lasers are ne... [more] | OCS2022-36 OPE2022-82 LQE2022-45 pp.100-103 |
| SDM | 2022-02-04 11:20 |
Online | Online | [Invited Talk]
3D Sequential Process Integration for CMOS Image Sensor Keiichi Nakazawa, Junpei Yamamoto, Nobutoshi Fujii, Mutsuo Uehara, Katsunori Hiramatsu, Hideomi Kumano, Shigetaka Mori, Shintaro Okamoto, Akito Shimizu, Koichi Baba, Hidetoshi Onuma, Akira Matsumoto, Koichiro Zaitsu, Keiji Tanani, Tomoyuki Hirano, Hayato Iwamoto (Sony Semiconductor Solutions) SDM2021-77 |
We developed a new structure of pixel transistors stacked over photodiode named “2-Layer Transistor Pixel Stacked CMOS I... [more] | SDM2021-77 pp.13-16 |
| SDM | 2022-01-31 16:00 |
Online | Online | [Invited Talk]
**** Keiichi Nakazawa, Junpei Yamamoto, Shigetaka Mori, Shintaro Okamoto, Akito Shimizu, Koichi Baba, Nobutoshi Fujii, Mutsuo Uehara, Katsunori Hiramatsu, Hideomi Kumano, Akira Matsumoto, Koichiro Zaitsu, Hidetoshi Ohnuma, Keiji Tatani, Tomoyuki Hirano, Hayato Iwamoto (Sony Semiconductor Solutions) SDM2021-73 |
We developed a new structure of pixel transistors stacked over photodiode named “2-Layer Transistor Pixel Stacked CMOS I... [more] | SDM2021-73 pp.20-23 |
| LQE, OPE, CPM, EMD, R | 2019-08-23 09:25 |
Miyagi | [Invited Talk]
Prospect of hybrid optical modulators using III-V membrane Mitsuru Takenaka, Qiang Li, Naoki Sekine, Shinichi Takagi (Univ.Tokyo) R2019-28 EMD2019-26 CPM2019-27 OPE2019-55 LQE2019-33 |
We have achieved extremely-high modulation efficiency using accumulated electrons in a hybrid MOS structure where a III-... [more] | R2019-28 EMD2019-26 CPM2019-27 OPE2019-55 LQE2019-33 pp.43-46 |
|
| LQE, OPE, SIPH | 2018-12-06 17:10 |
Tokyo | Keio University | Examination of Chip-on-Wafer Plasma Activated Bonding Technology for III-V on Si hybrid Photonic Integrated Circuits LIU BAI (Tokyo Tech), Takehiko Kikuchi (SEI), Takuya Mitarai, Nobuhiko Nishiyama (Tokyo Tech), Hideki Yagi (SEI), Tomohiro Amemiya, Shigehisa Arai (Tokyo Tech) OPE2018-127 LQE2018-137 SIPH2018-43 |
[more] | OPE2018-127 LQE2018-137 SIPH2018-43 pp.149-153 |
| LQE | 2018-07-13 10:40 |
Hokkaido | [Invited Talk]
Perspective of optical modulator using Si hybrid MOS phase shifter Mitsuru Takenaka, Shinichi Takagi (Univ. Tokyo) LQE2018-31 |
We have proposed a Si hybrid MOS structure where a thin III-V semiconductor membrane is bonded on a Si waveguide with a ... [more] | LQE2018-31 pp.43-46 |
|
| LQE, LSJ | 2018-05-25 13:25 |
Fukui | Comparison of GaInAsP laser diode between hydrophilic bonded InP/Si substrate and InP substrate Hiromu Yada, Kazuki Uchida, Hirokazu Sugiyama, Periyanayagam Gandhi Kallarasan, Xu Han, Masaki Aikawa, Natsuki Hayasaka, Kazuhiko Shimomura (Sophia Univ.) LQE2018-16 |
We have proposed monolithic integration of optical device on hydrophilic bonded InP/Si substrate via MOVPE. We have fabr... [more] | LQE2018-16 pp.25-28 |
|
| CPM, LQE, ED | 2016-12-13 11:20 |
Kyoto | Kyoto University | Development of wafer structure and monolithic integrated GaN-μLED driver circuit for large-scale optoelectonic chip Kazuaki Tsuchiyama, Shu Utsuhomiya, Shota Nakagawa, Keisuke Yamane, Hiroto Sekiguchi, Hiroshi Okada, Akihiro Wakahara (Toyohashi Tech.) ED2016-73 CPM2016-106 LQE2016-89 |
A Si/SiO2/GaN-LED structure was fabricated by surface activated bonding method, and a GaN-µLED driver circuit consi... [more] | ED2016-73 CPM2016-106 LQE2016-89 pp.79-83 |
| LQE, OPE, EMD, R, CPM | 2016-08-25 09:20 |
Hokkaido | Continuous-wave Operation of Ultra-short Cavity Membrane Lasers on Si Substrates Erina Kanno, Koji Takeda, Takuro Fujii, Koichi Hasebe, Hidetaka Nishi, Tsuyoshi Yamamoto, Takaaki Kakitsuka, Shinji Matsuo (NTT) R2016-19 EMD2016-23 CPM2016-32 OPE2016-53 LQE2016-28 |
It is required to reduce energy consumptions of directly modulated semiconductor lasers to realize very short distance o... [more] | R2016-19 EMD2016-23 CPM2016-32 OPE2016-53 LQE2016-28 pp.1-4 |
|
| OPE, LQE | 2016-06-17 13:15 |
Tokyo | Fabrication of GaInAsP laser using directly bonded InP/Si Tetsuo Nishiyama, Keiichi Matsumoto, Jyunya Kishikawa, Yuya Onuki, Naoki Kamada, Kazuhiko Shimomura (Sophia Univ.) OPE2016-12 LQE2016-22 |
Integration technique of optical devices on silicon platform have been proposed. This technique uses direct bonded thin ... [more] | OPE2016-12 LQE2016-22 pp.15-20 |
|
| LQE, OPE | 2015-06-19 13:25 |
Tokyo | Integration of III-V light emitting devices on heterogenious substrate employing directly-bonded InP platform Keiichi Matsumoto, Yoshinori Kanaya, Junya Kishikawa, Kazuhiko Shimomura (Sophia Univ.) OPE2015-13 LQE2015-23 |
Thin film InP layers have been bonded on Si substrate and Quarts substrate using wafer direct bonding technique and inte... [more] | OPE2015-13 LQE2015-23 pp.15-20 |
|
| SDM | 2015-03-02 10:35 |
Tokyo | Kikai-Shinko-Kaikan Bldg | [Invited Talk]
Integration Technology of 3D FPGA with Performance Scalability and Function Flexibility Kenichi Takeda, Mayu Aoki (Hitachi) SDM2014-163 |
Three-layer stacked wafer with CMOS devices was demonstrated by using hybrid wafer bonding and via-last through silicon ... [more] | SDM2014-163 pp.7-11 |
| OPE, LQE | 2014-12-19 14:50 |
Tokyo | Kikai-Shinko-Kaikan, NTT Atsugi R&D center | Thermal resistance improvement and low-resistance lateral PIN junction formation technique on III-V-OI wafers Yuki Ikku, Mitsuru Takenaka, Shinichi Takagi (Univ. Tokyo) OPE2014-146 LQE2014-133 |
III-V CMOS photonics is a platform which enables strong optical confinement to the III-V waveguides by using III-V-on-In... [more] | OPE2014-146 LQE2014-133 pp.37-40 |
| EMD, LQE, OPE, CPM, R | 2014-08-21 16:00 |
Hokkaido | Otaru Economy Center | Fabrication and High-Temperature Operation of InAs/GaAs Quantum Dot Lasers on Silicon by Wafer Bonding Katsuaki Tanabe, Yasuhiko Arakawa (Univ. of Tokyo) R2014-32 EMD2014-37 CPM2014-52 OPE2014-62 LQE2014-36 |
We are developing high-performance on-chip light sources utilizing semiconductor quantum dots towards the realization of... [more] | R2014-32 EMD2014-37 CPM2014-52 OPE2014-62 LQE2014-36 pp.51-54 |
| OPE, LQE | 2014-06-20 14:00 |
Tokyo | Electro-luminescence obtained from QDs LED grown on wafer bonded InP/Si substrate Keiichi Matsumoto, Yoshinori Kanaya, Junya Kishikawa, Kazuhiko Shimomura (Sophia Univ.) OPE2014-15 LQE2014-20 |
We have demonstrated (Ga)InAs/InP QD arrayed waveguide LED on directly bonded InP/Si substrate. Electroluminescence sign... [more] | OPE2014-15 LQE2014-20 pp.15-18 |
|
| OPE, LQE | 2014-06-20 16:40 |
Tokyo | Small, low-crosstalk optical switches using III-V CMOS photonics platform Yuki Ikku, Masafumi Yokoyama, Mitsuru Takenaka, Shinichi Takagi (Univ. of Tokyo) OPE2014-21 LQE2014-26 |
III-V CMOS photonics is a platform which enables strong optical confinement for the III-V waveguides by using III-V on i... [more] | OPE2014-21 LQE2014-26 pp.39-42 |
|
| SDM | 2014-01-29 15:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
3D Integrated CMOS Device by Using Wafer Stacking and Via-last TSV Mayu Aoki, Futoshi Furuta, Kazuyuki Hozawa, Yuko Hanaoka, Kenichi Takeda (Hitachi) SDM2013-145 |
A three-layer-stacked wafer with CMOS devices was fabricated for the first time by using hybrid wafer bonding and backsi... [more] | SDM2013-145 pp.43-46 |
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