Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
ICD |
2024-04-11 13:00 |
Kanagawa |
(Primary: On-site, Secondary: Online) |
NanoBridge Based Nonvolatile Memory Macro for High-temperature Operation Ryusuke Nebashi, Koichiro Okamoto, Toshitsugu Sakamoto, Munehiro Tada (NBS) ICD2024-4 |
NanoBridge (NB) is a kind of resistive-change device. We have developed NB-based memory macro with stable operations at ... [more] |
ICD2024-4 pp.12-16 |
DC, CPSY, IPSJ-SLDM, IPSJ-EMB, IPSJ-ARC [detail] |
2024-03-21 09:50 |
Nagasaki |
Ikinoshima Hall (Primary: On-site, Secondary: Online) |
Non-stop microprocessor with MTJ-based non-volatile devices Shota Nakabeppu, Nobuyuki Yamasaki (Keio Univ.) CPSY2023-39 DC2023-105 |
Today, various embedded systems, including automobiles, home appliances, robots, spacecraft, and sensor networks, suppor... [more] |
CPSY2023-39 DC2023-105 pp.7-11 |
VLD, DC, RECONF, ICD, IPSJ-SLDM [detail] |
2023-11-16 10:20 |
Kumamoto |
Civic Auditorium Sears Home Yume Hall (Primary: On-site, Secondary: Online) |
Proposal of MTJ-based non-volatile flip-flops using reference resistance and Two-step Store Control Kousei Kaizu, Kimiyoshi Usami (SIT) VLD2023-45 ICD2023-53 DC2023-52 RECONF2023-48 |
Non-Volatile Flip Flops (NVFF) using Magnetic Tunnel Junction (MTJ) enable non-volatile power gating and reduce leakage ... [more] |
VLD2023-45 ICD2023-53 DC2023-52 RECONF2023-48 pp.88-93 |
SDM |
2023-10-13 14:30 |
Miyagi |
Niche, Tohoku Univ. |
[Invited Talk]
Determination of charge centroid location and energy depth of charge carriers trapped in silicon nitride charge-trap layers Kiyoteru Kobayashi (Tokai Univ.) SDM2023-56 |
Metal-oxide-nitride-oxide-semiconductor (MONOS) field-effect transistors have been employed for memory cells in three-di... [more] |
SDM2023-56 pp.13-20 |
CPSY, DC, IPSJ-ARC [detail] |
2023-08-03 11:45 |
Hokkaido |
Hakodate Arena (Primary: On-site, Secondary: Online) |
Design of soft-error tolerant non-volatile flip-flops Shogo Takahashi, Kazuteru Namba (Chiba Univ.) CPSY2023-13 DC2023-13 |
In recent years,the incidence of soft errors in VLSI has been increasing due to miniaturization,higher integration,and l... [more] |
CPSY2023-13 DC2023-13 pp.31-36 |
ICD |
2023-04-10 09:55 |
Kanagawa |
(Primary: On-site, Secondary: Online) |
[Invited Lecture]
Nonvolatile Storage Cells Using FiCC for IoT Processors with Intermittent Operations Yuki Abe, Kazutoshi Kobayashi (KIT), Jun Shiomi (Osaka Univ.), Hiroyuki Ochi (Ritsumeikan Univ.) ICD2023-1 |
Energy harvesting is a key technology to supply power for Internet of Things (IoT) devices. Computing devices for IoTs m... [more] |
ICD2023-1 pp.1-6 |
ICD |
2023-04-11 14:10 |
Kanagawa |
(Primary: On-site, Secondary: Online) |
[Invited Talk]
NanoBridge Technology for Embedded Nonvolatile Memory Ryusuke Nebashi, Koichiro Okamoto, Toshitsugu Sakamoto, Munehiro Tada (NBS) ICD2023-11 |
NanoBridge (NB) is a kind of electrochemical resistive-change device. NBs are integrated by only two additional masks in... [more] |
ICD2023-11 pp.24-28 |
HWS, VLD |
2023-03-02 09:55 |
Okinawa |
(Primary: On-site, Secondary: Online) |
Implementation of power-outage tolerant VLSI system using asynchronous circuits Masashi Imai (Hirosaki Univ.) VLD2022-86 HWS2022-57 |
Re-initialization free systems which contain nonvolatile memory have been proposed in order to cope with power-outage. H... [more] |
VLD2022-86 HWS2022-57 pp.79-84 |
HWS, VLD |
2023-03-03 13:25 |
Okinawa |
(Primary: On-site, Secondary: Online) |
High-Performance and Programmer-Friendly Secure Non-Volatile Memory using Temporal Memory-Access Redirection Ryo Koike, Shinya Takamaeda (UTokyo) VLD2022-106 HWS2022-77 |
Byte-addressable non-volatile memory (NVM) has two challenges, performance degradation due to high-latency integrity tre... [more] |
VLD2022-106 HWS2022-77 pp.179-184 |
SDM |
2023-01-30 15:25 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. B3-1 |
[Invited Talk]
Non-volatile Mid-infrared Phase Change Material Optical Phase Shifter Based on Ge2Sb2Te3S2 Yuto Miyatake (Univ. of Tokyo), Kotaro Makino, Junji Tominaga, Noriyuki Miyata, Takashi Nakano, Makoto Okano (AIST), Kasidit Toprasertpong, Shinichi Takagi, Mitsuru Takenaka (Univ. of Tokyo) SDM2022-83 |
An optical phase shifter based on phase-change materials (PCMs) is a promising building block of quantum photonic integr... [more] |
SDM2022-83 pp.17-20 |
NLP |
2022-11-24 15:50 |
Shiga |
(Primary: On-site, Secondary: Online) |
Investigation of the range in application of a neural network with spike timing in quantitative analysis of two gas mixtures Taiga Manabe, Katsumi Tateno (KIT), Osamu Nakamura (UT) NLP2022-65 |
Volatile organic compounds (VOCs) are useful substances in industry, but the effects of exposure to VOCs through inhalat... [more] |
NLP2022-65 pp.36-41 |
VLD, HWS [detail] |
2022-03-07 14:05 |
Online |
Online |
Measurement Results of Nonvolatile Flip-Flops Using FiCC for IoT Processors with Intermittent Operations Yuki Abe, Kazutoshi Kobayashi (KIT), Hiroyuki Ochi (Ritsumeikan Univ.) VLD2021-85 HWS2021-62 |
In recent years, with the spread of the Internet of Things (IoT) and mobile devices, low power consumption of processors... [more] |
VLD2021-85 HWS2021-62 pp.45-50 |
OME |
2022-01-07 14:05 |
Osaka |
CENTRAL ELECTRIC CLUB |
Device characteristics of organic floating-gate memories based on n-channel polymer transistors Naoyuki Nishida, Reitaro Hattori, Takashi Nagase, Takaki Adachi, Kazuyoshi Morikawa, Takashi Kobayashi, Takashi Kobayashi (Osaka Pref. Univ.) OME2021-48 |
Use of a charge storage layer composed of a polymer insulator of PMMA and a soluble small-molecule semiconductor of TIPS... [more] |
OME2021-48 pp.4-8 |
VLD, DC, RECONF, ICD, IPSJ-SLDM (Joint) [detail] |
2021-12-01 10:35 |
Online |
Online |
Energy saving in a multi-context coarse grained reconfigurable array with non-volatile flip-flops Aika Kamei, Takuya Kojima, Hideharu Amano (Keio Univ.), Daiki Yokoyama, Hisato Miyauchi, Kimiyoshi Usami (SIT), Keizo Hiraga, Kenta Suzuki (SSS) VLD2021-20 ICD2021-30 DC2021-26 RECONF2021-28 |
IoT and edge-computing have been attracting much attention and demands for power efficiency as well as high performance ... [more] |
VLD2021-20 ICD2021-30 DC2021-26 RECONF2021-28 pp.19-24 |
SDM |
2021-10-21 13:50 |
Online |
Online |
A study on Hf-based MONOS nonvolatile memory with HfO2 and HfON tunneling layers for multi-bit/cell operation Pyo Jooyoung, Ihara Akio, Ohmi Shun-ichiro (Tokyo Tech.) SDM2021-48 |
We investigated the in-situ formed Hf-based MONOS non-volatile memory (NVM) device with HfO2 and HfON tunneling layer (T... [more] |
SDM2021-48 pp.16-19 |
CPSY, DC, IPSJ-ARC [detail] |
2021-07-20 14:00 |
Online |
Online |
Prototype Implementation of Non-Volatile Memory Support for RISC-V Keystone Enclave Lena Yu, Yu Omori, Keiji Kimura (Waseda Univ.) CPSY2021-2 DC2021-2 |
Handling confidential information has become an increasingly important concern among many areas of society. However, cur... [more] |
CPSY2021-2 DC2021-2 pp.7-12 |
ED, SDM, CPM |
2021-05-27 14:10 |
Online |
Online |
Evaluation of I-V Characteristics of Zr/ZrOx/Pt Structure for Resistive Random Access Memory Yuki Kawai, Masaru Sato, Mayumi B. Takeyama (Kitami Inst. of Tech.) ED2021-3 CPM2021-3 SDM2021-14 |
Resistive random access memory is attracting attention as the next generation non-volatile memory. However, there are v... [more] |
ED2021-3 CPM2021-3 SDM2021-14 pp.11-14 |
CPSY, DC, IPSJ-SLDM, IPSJ-EMB, IPSJ-ARC [detail] |
2021-03-26 14:40 |
Online |
Online |
Non Stop Processor with Non Volatile Element Shota Nakabeppu, Nao Sugiyama, Nobuyuki Yamasaki (Keio Univ.), Kenta Suzuki, Keizo Hiraga, Yasuo Kanda (Sony Semiconductor Solutions) CPSY2020-66 DC2020-96 |
In recent years, embedded systems such as wearable devices and robots have become widespread. Wear-
able devices often ... [more] |
CPSY2020-66 DC2020-96 pp.97-102 |
CPM |
2021-03-03 13:45 |
Online |
Online |
Electrical properties of Zr/ZrO2/Pt stacked structure with/without thin CuOx film Yuki Kawai, Kazuki Yamamoto, Yu Otsuka, Masaru Satou, Mayumi B.Takeyama (Kitami Inst. of Tech.) CPM2020-69 |
In recent years, a Resistive Random Access Memory (RRAM) has been attracting attention as one of the most promising next... [more] |
CPM2020-69 pp.52-54 |
DE, IPSJ-DBS |
2020-12-22 10:00 |
Online |
Online |
A Study of Execution Costs of Database Operations for Non-Volatile Memory Devices Hirotaka Yoshioka, Kazuo Goda, Masaru Kitsuregawa (Univ of Tokyo) DE2020-23 |
Non-Volatile memory (NVM) is an emerging technology, which has persistency properties similar to SSD and HDD, while prov... [more] |
DE2020-23 pp.36-41 |