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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 20 of 137  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
ICD 2024-04-11
13:00
Kanagawa
(Primary: On-site, Secondary: Online)
NanoBridge Based Nonvolatile Memory Macro for High-temperature Operation
Ryusuke Nebashi, Koichiro Okamoto, Toshitsugu Sakamoto, Munehiro Tada (NBS) ICD2024-4
NanoBridge (NB) is a kind of resistive-change device. We have developed NB-based memory macro with stable operations at ... [more] ICD2024-4
pp.12-16
DC, CPSY, IPSJ-SLDM, IPSJ-EMB, IPSJ-ARC [detail] 2024-03-21
09:50
Nagasaki Ikinoshima Hall
(Primary: On-site, Secondary: Online)
Non-stop microprocessor with MTJ-based non-volatile devices
Shota Nakabeppu, Nobuyuki Yamasaki (Keio Univ.) CPSY2023-39 DC2023-105
Today, various embedded systems, including automobiles, home appliances, robots, spacecraft, and sensor networks, suppor... [more] CPSY2023-39 DC2023-105
pp.7-11
VLD, DC, RECONF, ICD, IPSJ-SLDM [detail] 2023-11-16
10:20
Kumamoto Civic Auditorium Sears Home Yume Hall
(Primary: On-site, Secondary: Online)
Proposal of MTJ-based non-volatile flip-flops using reference resistance and Two-step Store Control
Kousei Kaizu, Kimiyoshi Usami (SIT) VLD2023-45 ICD2023-53 DC2023-52 RECONF2023-48
Non-Volatile Flip Flops (NVFF) using Magnetic Tunnel Junction (MTJ) enable non-volatile power gating and reduce leakage ... [more] VLD2023-45 ICD2023-53 DC2023-52 RECONF2023-48
pp.88-93
SDM 2023-10-13
14:30
Miyagi Niche, Tohoku Univ. [Invited Talk] Determination of charge centroid location and energy depth of charge carriers trapped in silicon nitride charge-trap layers
Kiyoteru Kobayashi (Tokai Univ.) SDM2023-56
Metal-oxide-nitride-oxide-semiconductor (MONOS) field-effect transistors have been employed for memory cells in three-di... [more] SDM2023-56
pp.13-20
CPSY, DC, IPSJ-ARC [detail] 2023-08-03
11:45
Hokkaido Hakodate Arena
(Primary: On-site, Secondary: Online)
Design of soft-error tolerant non-volatile flip-flops
Shogo Takahashi, Kazuteru Namba (Chiba Univ.) CPSY2023-13 DC2023-13
In recent years,the incidence of soft errors in VLSI has been increasing due to miniaturization,higher integration,and l... [more] CPSY2023-13 DC2023-13
pp.31-36
ICD 2023-04-10
09:55
Kanagawa
(Primary: On-site, Secondary: Online)
[Invited Lecture] Nonvolatile Storage Cells Using FiCC for IoT Processors with Intermittent Operations
Yuki Abe, Kazutoshi Kobayashi (KIT), Jun Shiomi (Osaka Univ.), Hiroyuki Ochi (Ritsumeikan Univ.) ICD2023-1
Energy harvesting is a key technology to supply power for Internet of Things (IoT) devices. Computing devices for IoTs m... [more] ICD2023-1
pp.1-6
ICD 2023-04-11
14:10
Kanagawa
(Primary: On-site, Secondary: Online)
[Invited Talk] NanoBridge Technology for Embedded Nonvolatile Memory
Ryusuke Nebashi, Koichiro Okamoto, Toshitsugu Sakamoto, Munehiro Tada (NBS) ICD2023-11
NanoBridge (NB) is a kind of electrochemical resistive-change device. NBs are integrated by only two additional masks in... [more] ICD2023-11
pp.24-28
HWS, VLD 2023-03-02
09:55
Okinawa
(Primary: On-site, Secondary: Online)
Implementation of power-outage tolerant VLSI system using asynchronous circuits
Masashi Imai (Hirosaki Univ.) VLD2022-86 HWS2022-57
Re-initialization free systems which contain nonvolatile memory have been proposed in order to cope with power-outage. H... [more] VLD2022-86 HWS2022-57
pp.79-84
HWS, VLD 2023-03-03
13:25
Okinawa
(Primary: On-site, Secondary: Online)
High-Performance and Programmer-Friendly Secure Non-Volatile Memory using Temporal Memory-Access Redirection
Ryo Koike, Shinya Takamaeda (UTokyo) VLD2022-106 HWS2022-77
Byte-addressable non-volatile memory (NVM) has two challenges, performance degradation due to high-latency integrity tre... [more] VLD2022-106 HWS2022-77
pp.179-184
SDM 2023-01-30
15:25
Tokyo Kikai-Shinko-Kaikan Bldg. B3-1 [Invited Talk] Non-volatile Mid-infrared Phase Change Material Optical Phase Shifter Based on Ge2Sb2Te3S2
Yuto Miyatake (Univ. of Tokyo), Kotaro Makino, Junji Tominaga, Noriyuki Miyata, Takashi Nakano, Makoto Okano (AIST), Kasidit Toprasertpong, Shinichi Takagi, Mitsuru Takenaka (Univ. of Tokyo) SDM2022-83
An optical phase shifter based on phase-change materials (PCMs) is a promising building block of quantum photonic integr... [more] SDM2022-83
pp.17-20
NLP 2022-11-24
15:50
Shiga
(Primary: On-site, Secondary: Online)
Investigation of the range in application of a neural network with spike timing in quantitative analysis of two gas mixtures
Taiga Manabe, Katsumi Tateno (KIT), Osamu Nakamura (UT) NLP2022-65
Volatile organic compounds (VOCs) are useful substances in industry, but the effects of exposure to VOCs through inhalat... [more] NLP2022-65
pp.36-41
VLD, HWS [detail] 2022-03-07
14:05
Online Online Measurement Results of Nonvolatile Flip-Flops Using FiCC for IoT Processors with Intermittent Operations
Yuki Abe, Kazutoshi Kobayashi (KIT), Hiroyuki Ochi (Ritsumeikan Univ.) VLD2021-85 HWS2021-62
In recent years, with the spread of the Internet of Things (IoT) and mobile devices, low power consumption of processors... [more] VLD2021-85 HWS2021-62
pp.45-50
OME 2022-01-07
14:05
Osaka CENTRAL ELECTRIC CLUB Device characteristics of organic floating-gate memories based on n-channel polymer transistors
Naoyuki Nishida, Reitaro Hattori, Takashi Nagase, Takaki Adachi, Kazuyoshi Morikawa, Takashi Kobayashi, Takashi Kobayashi (Osaka Pref. Univ.) OME2021-48
Use of a charge storage layer composed of a polymer insulator of PMMA and a soluble small-molecule semiconductor of TIPS... [more] OME2021-48
pp.4-8
VLD, DC, RECONF, ICD, IPSJ-SLDM
(Joint) [detail]
2021-12-01
10:35
Online Online Energy saving in a multi-context coarse grained reconfigurable array with non-volatile flip-flops
Aika Kamei, Takuya Kojima, Hideharu Amano (Keio Univ.), Daiki Yokoyama, Hisato Miyauchi, Kimiyoshi Usami (SIT), Keizo Hiraga, Kenta Suzuki (SSS) VLD2021-20 ICD2021-30 DC2021-26 RECONF2021-28
IoT and edge-computing have been attracting much attention and demands for power efficiency as well as high performance ... [more] VLD2021-20 ICD2021-30 DC2021-26 RECONF2021-28
pp.19-24
SDM 2021-10-21
13:50
Online Online A study on Hf-based MONOS nonvolatile memory with HfO2 and HfON tunneling layers for multi-bit/cell operation
Pyo Jooyoung, Ihara Akio, Ohmi Shun-ichiro (Tokyo Tech.) SDM2021-48
We investigated the in-situ formed Hf-based MONOS non-volatile memory (NVM) device with HfO2 and HfON tunneling layer (T... [more] SDM2021-48
pp.16-19
CPSY, DC, IPSJ-ARC [detail] 2021-07-20
14:00
Online Online Prototype Implementation of Non-Volatile Memory Support for RISC-V Keystone Enclave
Lena Yu, Yu Omori, Keiji Kimura (Waseda Univ.) CPSY2021-2 DC2021-2
Handling confidential information has become an increasingly important concern among many areas of society. However, cur... [more] CPSY2021-2 DC2021-2
pp.7-12
ED, SDM, CPM 2021-05-27
14:10
Online Online Evaluation of I-V Characteristics of Zr/ZrOx/Pt Structure for Resistive Random Access Memory
Yuki Kawai, Masaru Sato, Mayumi B. Takeyama (Kitami Inst. of Tech.) ED2021-3 CPM2021-3 SDM2021-14
Resistive random access memory is attracting attention as the next generation non-volatile memory. However, there are v... [more] ED2021-3 CPM2021-3 SDM2021-14
pp.11-14
CPSY, DC, IPSJ-SLDM, IPSJ-EMB, IPSJ-ARC [detail] 2021-03-26
14:40
Online Online Non Stop Processor with Non Volatile Element
Shota Nakabeppu, Nao Sugiyama, Nobuyuki Yamasaki (Keio Univ.), Kenta Suzuki, Keizo Hiraga, Yasuo Kanda (Sony Semiconductor Solutions) CPSY2020-66 DC2020-96
In recent years, embedded systems such as wearable devices and robots have become widespread. Wear-
able devices often ... [more]
CPSY2020-66 DC2020-96
pp.97-102
CPM 2021-03-03
13:45
Online Online Electrical properties of Zr/ZrO2/Pt stacked structure with/without thin CuOx film
Yuki Kawai, Kazuki Yamamoto, Yu Otsuka, Masaru Satou, Mayumi B.Takeyama (Kitami Inst. of Tech.) CPM2020-69
In recent years, a Resistive Random Access Memory (RRAM) has been attracting attention as one of the most promising next... [more] CPM2020-69
pp.52-54
DE, IPSJ-DBS 2020-12-22
10:00
Online Online A Study of Execution Costs of Database Operations for Non-Volatile Memory Devices
Hirotaka Yoshioka, Kazuo Goda, Masaru Kitsuregawa (Univ of Tokyo) DE2020-23
Non-Volatile memory (NVM) is an emerging technology, which has persistency properties similar to SSD and HDD, while prov... [more] DE2020-23
pp.36-41
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