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Committee Date Time Place Paper Title / Authors Abstract Paper #
MW 2017-11-09
10:15		 Okinawa Miyakojima Marin Terminal Bldg. High-order Mode Transmission Suppression Technique using Via hole and Defected Ground Structure in CBCPW line
Kakiuchi Hideshi, Nishikawa Kenjiro (Kagoshima Univ.) MW2017-112		 This paper investigated the suppression of high-order mode transmission on CBCPW line by using via-holes and defected g... [more] MW2017-112
pp.5-8
MW
(2nd)		 2017-06-14
- 2017-06-16		 Overseas KMUTT, Bangkok, Thailand High-order Mode Transmission Suppression Technique with Via-holes on THz Grounded CPW Line
Hideshi Kakiuchi, Kenjiro Nishikawa (Kagoshima Univ.) 		This paper investigated the suppression of high-order mode transmission on CBCPW line by using via-holes. It was confirm... [more]
ED, MW 2012-01-11
13:00		 Tokyo Kikai-Shinko-Kaikan Bldg Band Broadening of Waveguide/Microstrip-line Transformer for Millimeter-wave Band
Toshitatsu Suzuki, Yozo Utsumi, Noboru Morita, Takefumi Hiraguri (Nippon Inst. of Tech.), Munehiro Yokota, Toshihisa Kamei (NDA), Kiyozumi Chino, Ikurou Aoki, Hirosuke Suzuki (KEYCOM) ED2011-123 MW2011-146		 This paper reports prototype waveguide / microstrip-line / waveguide transformers (two times transformation) for 50&#872... [more] ED2011-123 MW2011-146
pp.25-30
SDM, ED 2008-07-11
10:50		 Hokkaido Kaderu２・７ High Breakdown Voltage of 10400V in AlGaN/GaN HFET with AlN Passivation
Daisuke Shibata, Hisayoshi Matsuo (Matsushita Electric Industrial), Shuichi Nagai, Ming Li (Panasonic Boston Lab), Naohiro Tsurumi, Hidetoshi Ishida, Manabu Yanagihara, Yasuhiro Uemoto, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda (Matsushita Electric Industrial) ED2008-73 SDM2008-92		 We report ultra high blocking voltage AlGaN/GaN heterojunction transistors (HFETs) using thick poly-crystalline AlN (pol... [more] ED2008-73 SDM2008-92
pp.177-181
ED, MW 2008-01-16
16:15		 Tokyo Kikai-Shinko-Kaikan Bldg. 10400V Blocking Voltage AlGaN/GaN Power HFET
Daisuke Shibata, Yasuhiro Uemoto, Manabu Yanagihara, Hidetoshi Ishida (Panasonic), Shuichi Nagai (Panasonic Boston Lab.), Hisayoshi Matsuo (Panasonic), Ming Li (Panasonic Boston Lab.), Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda (Panasonic) ED2007-213 MW2007-144		 We report ultra high blocking voltage AlGaN/GaN heterojunction transistors (HFETs) on sapphire using via-holes and thick... [more] ED2007-213 MW2007-144
pp.39-43
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