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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 11 of 11  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
CPM, ED, LQE 2022-11-24
13:05
Aichi Winc Aichi (Aichi Industry & Labor Center)
(Primary: On-site, Secondary: Online)
Al-doped ZnO thin films deposited by sol-gel method
Koji Abe, Tasuku Kubota (NITech) ED2022-30 CPM2022-55 LQE2022-63
Sol-gel process is used to deposit oxide semiconductor thin films such as zinc oxide (ZnO). However, resistivity of ZnO ... [more] ED2022-30 CPM2022-55 LQE2022-63
pp.33-36
EID, SDM, ITE-IDY [detail] 2020-12-02
10:30
Online Online Characterization of amorphous Ga-Sn-O thin film thermoelectric conversion element
Yuhei Yamamoto, Tatuya Aramaki, Ryo Ito, Mutumi Kimura (Ryukoku Univ.) EID2020-3 SDM2020-37
Most of the exhaust heat generated from factories, automobiles, PCs, etc. is unused. Thermoelectric conversion device ca... [more] EID2020-3 SDM2020-37
pp.9-12
ED, LQE, CPM 2018-11-30
11:15
Aichi Nagoya Inst. tech. Fabrication and evaluation of p-type Cu-AlOx thin film by photochemical deposition method
Masanari Umemura, Masaya Ichimura (Nagoya Inst. Tech.) ED2018-46 CPM2018-80 LQE2018-100
AlOx has many physical properties suitable for electronic devices such as wide bandgap and high dielectric breakdown ele... [more] ED2018-46 CPM2018-80 LQE2018-100
pp.65-70
CPM, ED, SDM 2016-05-20
09:55
Shizuoka Shizuoka University, Hamamatsu campus (Joint Research Lab.) Annealing of p-type wide-gap CuxZnyS thin films deposited by the photochemical deposition method
Bayingaerdi Tong, Masaya Ichimura (NITech) ED2016-22 CPM2016-10 SDM2016-27
Zn-rich of CuxZnyS is a transparent p-type semiconductor. We prepared the CuxZnyS thin films by the photochemical deposi... [more] ED2016-22 CPM2016-10 SDM2016-27
pp.43-46
ED, SDM 2016-03-03
14:00
Hokkaido Centennial Hall, Hokkaido Univ. [Invited Talk] A Recent Development in Thin-Film Device Applications using Oxide Semiconductors
Toshihiko Maemoto, Yi Sun, Souhei Matsuda, Shota Sasaki, Kouhei Ashida, Oliver Kaltstein, Masatoshi Koyama, Kazuto Koike, Mitsuaki Yano, Shigehiko Sasa (Osaka Inst. Tech.) ED2015-121 SDM2015-128
We report on the fabrication and characterization of flexible thin-film-transistors using a transparent zinc oxide (ZnO)... [more] ED2015-121 SDM2015-128
pp.1-6
OME 2013-03-08
15:20
Tokyo Kikai-Shinko-Kaikan Bldg. B1-2 Semi-transparent Organic Photovoltaic using Lamination Process
Kenta Fukada, Chieko Shimada, Seimei Shiratori (Keio Univ.) OME2012-111
We fabricated semi-transparent organic photovoltaic by lamination process. In this study, in order to optimize the devic... [more] OME2012-111
pp.27-32
SDM, ED 2013-02-27
16:05
Hokkaido Hokkaido Univ. Rectification in ZnO Self Switching Nano-Diodes toward Flexible Device Applications
Yi Sun, Yuta Kimura, Toshihiko Maemoto, Shigehiko Sasa (Osaka Inst. of Tech.), Seiya Kasai (Hokkaido Univ.) ED2012-133 SDM2012-162
We focus on Self Switching nano-Diodes (SSD) as a application for oxide semiconductors. The SSD is a novel functional na... [more] ED2012-133 SDM2012-162
pp.31-34
OME, OPE 2012-11-16
13:30
Tokyo Kikai-Shinko-Kaikan Bldg. Improvement of wet processed ZnO FET characteristics by UV/O3 assisted thermal treatments
Wataru Sakai, Hiroshi Yamauchi, Shigekazu Kuniyoshi, Masaaki Iizuka, Masatoshi Sakai, Kazuhiro Kudo (Chiba Univ.) OME2012-56 OPE2012-128
We proposed the organic light emitting transistors (OLETs) with transparent ZnO FET. In this study, we fabricated wet pr... [more] OME2012-56 OPE2012-128
pp.7-11
ITE-IDY, EID 2012-11-07
15:00
Tokyo Kikai-Shinko-Kaikan Bldg. Report on IMID 2012 -- Thin-Film Transistor technologies --
Aya Hino, Kazushi Hayashi (Kobelco)
We review the papers that were presented in the session of TFT-related technologies at IMID 2012. [more]
SDM, ED
(Workshop)
2012-06-27
15:45
Okinawa Okinawa Seinen-kaikan Influence of co-sputtered HfO2-Ti gate dielectric in IZO-based Transparent thin film transistors
Jungil Yang, Donghee Lee, Dongkyu Cho, Sanghyun Woo, Yoosung Lim, Sungmin Park, Daekuk Kim, Moonsuk Yi (PNU.)
Metal-oxide thin film transistors (TFTs) have been fabricated using HfO2 and co-sputtered HfO2–Ti (HfTiO) as gate ... [more]
LQE, PN, OPE, OFT, EMT 2006-02-02
14:40
Hyogo Kobe Univ. Completely transparent wavelength conversion method using four-wave mixing in Mach-Zehnder interferometric SOA
Koji Otsubo, Shinsuke Tanaka, Shuichi Tomabechi, Ken Morito, Haruhiko Kuwatsuka (Fujitsu Labs. Ltd.)
We propose a novel method to realize wavelength conversion with complete transparency, high conversion efficiency, wide ... [more] PN2005-94 OFT2005-81 OPE2005-142 LQE2005-157
pp.51-54
 Results 1 - 11 of 11  /   
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