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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| VLD, DC, CPSY, RECONF, ICD, IE, IPSJ-SLDM, IPSJ-EMB, IPSJ-ARC (Joint) [detail] |
2019-11-14 09:40 |
Ehime | Ehime Prefecture Gender Equality Center | Device characteristic measurement for realizing CMOS-compatible non-volatile memory using FiCC Ippei Tanaka, Naoyuki Miyagawa, Tomoya Kimura, Takashi Imagawa, Hiroyuki Ochi (Ritsumeikan Univ.)  VLD2019-36 DC2019-60 |
This report proposes a new non-volatile memory element that can be fabricated with a standard CMOS process, and that can... [more] | VLD2019-36 DC2019-60 pp.63-68 |
| VLD, DC, CPSY, RECONF, CPM, ICD, IE, IPSJ-SLDM, IPSJ-EMB, IPSJ-ARC (Joint) [detail] |
2018-12-07 09:00 |
Hiroshima | Satellite Campus Hiroshima | Design and fabrication of characteristics measurement circuit for CMOS-compatible ultra-low-power non-volatile memory element using FiCC Ippei Tanaka, Naoyuki Miyagawa, Tomoya Kimura, Takashi Imagawa, Hiroyuki Ochi (Ritsumeikan Univ.) VLD2018-65 DC2018-51 |
This report proposes a new non-volatile memory element that can be fabricated with a standard CMOS process, and that can... [more] | VLD2018-65 DC2018-51 pp.183-188 |
| SDM, ICD, ITE-IST [detail] | 2017-08-01 13:50 |
Hokkaido | Hokkaido-Univ. Multimedia Education Bldg. | Evaluation of equivalent MOSFET reduced temperature dependence of threshold voltage Takuya Yamaguchi, Tatsuya Oku, Kawori Sekine (Meiji Univ.) SDM2017-41 ICD2017-29 |
A MOSFET has a temperature dependence of threshold voltage and mobility. In this paper, we focused on threshold voltage ... [more] | SDM2017-41 ICD2017-29 pp.77-82 |
| SDM | 2015-06-19 15:15 |
Aichi | VBL, Nagoya Univ. | Electrical properties of GIZO TFT with ultrathin Al2O3 insulators by PE-ALD method Kazunori Kurishima (Meiji Univ./NIMS), Toshihide Nabatame, Kazuhito Tsukagoshi, Akihiko Ohi, Toyohiro Chikyow (NIMS), Atsushi Ogura (Meiji Univ.) SDM2015-51 |
To investigate the influence of an Al2O3 layer on the electrical properties of Ga-In-Zn-O (GIZO) thin-film transistors (... [more] | SDM2015-51 pp.69-73 |
| SDM | 2015-01-27 15:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Accurate Prediction of PBTI Lifetime in N-type Fin-Channel High-k Tunnel FETs Wataru Mizubayashi, Takahiro Mori, Koichi Fukuda, Yongxun Liu, Takashi Matsukawa, Yuki Ishikawa, Kazuhiko Endo, Shinichi Ohuchi, Junichi Tsukada, Hiromi Yamauchi, Yukinori Morita, Shinji Migita, Hiroyuki Ota, Meishoku Masahara (AIST) SDM2014-143 |
The positive bias temperature instability (PBTI) characteristics for n-type fin-channel tunnel FETs (TFETs) with high-k ... [more] | SDM2014-143 pp.33-36 |
| ICD, SDM | 2014-08-05 14:55 |
Hokkaido | Hokkaido Univ., Multimedia Education Bldg. | Initial Frequency Degradation on Ring Oscillators in 65-nm SOTB Process Caused by Plasma-Induced Damage Azusa Oshima, Ryo Kishida, Michitarou Yabuuchi, Kazutoshi Kobayashi (KIT) SDM2014-79 ICD2014-48 |
Reliability issues, such as plasma-induced damage (PID) and Bias Temperature Instability (BTI), become dominant on inte... [more] |
SDM2014-79 ICD2014-48 pp.93-98 |
| ICD, SDM | 2014-08-05 16:10 |
Hokkaido | Hokkaido Univ., Multimedia Education Bldg. | Area-Efficient and Low-Power SAR ADC with Dynamic Comparator Threshold Configuring by Source Voltage Shifting Masaki Yonekura, Kentaro Yoshioka, Hiroki Ishikuro (Keio Univ) SDM2014-82 ICD2014-51 |
An extremely low power and area efficient threshold configuring ADC (TC-ADC) is proposed. The threshold configuring comp... [more] | SDM2014-82 ICD2014-51 pp.109-113 |
| ED, LQE, CPM | 2012-11-29 15:50 |
Osaka | Osaka City University | Reduction in Threshold Voltage Shift of Insulated-gate GaN-HEMT Using ALD-Al2O3 Films Shiro Ozaki, Toshihiro Ohki, Masahito Kanamura, Tadahiro Imada, Norikazu Nakamura, Naoya Okamoto, Toyoo Miyajima, Toshihide Kikkawa (Fujitsu Laboratories Ltd.) ED2012-75 CPM2012-132 LQE2012-103 |
We reported the threshold voltage (Vth) shift phenomena of insulated-gate GaN high electron mobility transistor (HEMT) f... [more] | ED2012-75 CPM2012-132 LQE2012-103 pp.41-44 |
| ICD, SDM | 2012-08-02 10:00 |
Hokkaido | Sapporo Center for Gender Equality, Sapporo, Hokkaido | Self-Improvement of Cell Stability in SRAM by Post Fabrication Technique Anil Kumar, Takuya Saraya (Univ. of Tokyo), Shinji Miyano (STARC), Toshiro Hiramoto (Univ. of Tokyo) SDM2012-65 ICD2012-33 |
The post fabrication technique for self-improvement of SRAM cell stability is validated by experiment using 1k DMA SRAM ... [more] | SDM2012-65 ICD2012-33 pp.13-16 |
| SDM | 2011-10-21 14:00 |
Miyagi | Tohoku Univ. (Niche) | [Invited Talk]
Design Framework for Parameter Fluctuation in MOSFET Damaged by Ion Bombardment during Plasma Etching Koji Eriguchi, Yoshinori Nakakubo, Asahiko Matsuda, Yoshinori Takao, Kouichi Ono (Kyoto Univ.) SDM2011-110 |
We investigated the effects of plasma process-induced physical damage (bombardment of ions) on MOSFET performance degrad... [more] | SDM2011-110 pp.73-78 |
| SDM | 2010-12-17 10:00 |
Kyoto | Kyoto Univ. (Katsura) | Bandgap of <100> Si Nanowires Derived from Threshold Voltage of MOSFETs and Theoritical Calculations Hironori Yoshioka, Naoya Morioka, Jun Suda, Tsunenobu Kimoto (Kyoto Univ.) SDM2010-185 |
Thin <100> Si-nanowire (Si-NW) MOSFETs were fabricated to characterize the quantum confinement effect in Si NWs. The cro... [more] | SDM2010-185 pp.1-6 |
| SDM | 2009-06-19 15:40 |
Tokyo | An401・402 Inst. Indus. Sci., The Univ. of Tokyo | Intrinsic Correlation between Mobility Reduction and Vt shift due to Interface Dipole Modulation in HfSiON/SiO2 stack by La or Al addition Kosuke Tatsumura, Takamitsu Ishihara, Seiji Inumiya, Kazuaki Nakajima, Akio Kaneko, Masakazu Goto, Shigeru Kawanaka, Atsuhiro Kinoshita (Toshiba Corp.) SDM2009-39 |
Intrinsic correlation between mobility reduction by remote Coulomb scattering (RCS) and threshold voltage shift (ΔVt), b... [more] | SDM2009-39 pp.71-76 |
| CPM, EMD, OME | 2009-06-19 15:55 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Study of injected carrier energetics in organic-field-effect-transistor by charge modulation spectroscopy Ryo Miyazawa, Dai Taguchi, Martin Weis, Takaaki Manaka, Mitsumasa Iwamoto (Tokyo Inst. of Tech.) EMD2009-18 CPM2009-30 OME2009-25 |
We measured CMS spectra and C-V characteristics of P3HT MIS diodes. The CMS spectra and C-V characteristics showedthat i... [more] | EMD2009-18 CPM2009-30 OME2009-25 pp.23-26 |
| VLD | 2009-03-13 11:05 |
Okinawa | Correlation Verification between Transistor Variability Model with Body Biasing and Ring Oscillation Frequency in Subthreshold Circuits Hiroshi Fuketa, Masanori Hashimoto, Yukio Mitsuyama, Takao Onoye (Osaka Univ./JST-CREST) VLD2008-160 |
This paper presents modeling of manufacturing variability and body bias effect for subthreshold circuits based on mea... [more] |
VLD2008-160 pp.201-206 |
|
| SDM, OME | 2008-04-11 14:05 |
Okinawa | Okinawa Seinen Kaikan | Degradation of Ga2o3-In2O3-Zno(GIZO) Thin Film Transistors Mami Fujii, Hiroshi Yano, Tomoaki Hatayama, Yukiharu Uraoka, Takashi Fuyuki (NAIST), Ji Sim Jung, Jang Yeon Kwon (Sumsung Advenced Institute of Technology) SDM2008-10 OME2008-10 |
We have investigated a degradation of Ga2O3-In2O3-ZnO（GIZO）thin film transistor under DC stress. For a positive gate bia... [more] | SDM2008-10 OME2008-10 pp.47-50 |
| MW, ED | 2007-01-19 13:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Fabrication and Characterization of Schottky Wrap Gate Controlled AlGaN/GaN Nanowire FETs Takahiro Tamura, Junji Kotani, Seiya Kasai, Tamotsu Hashizume (Hokkaido Univ., RCIQE) |
Schottky wrap gate (WPG) controlled AlGaN/GaN nanowire FETs were fabricated and characterized. The devices with channel ... [more] | ED2006-232 MW2006-185 pp.179-182 |
| SDM, VLD | 2006-09-26 11:15 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Modeling of Discrete Dopant Effects on Threshold Voltage Shift by Random Telegraph Signal Ken'ichiro Sonoda, Kiyoshi Ishikawa, Takahisa Eimori, Osamu Tsuchiya (Renesas Technology Corp.) |
This paper discusses the discrete channel dopant effects on the threshold voltage shift by random telegraph signal (RTS)... [more] | VLD2006-42 SDM2006-163 pp.19-24 |
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