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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2015-06-19 13:00 |
Aichi | VBL, Nagoya Univ. | First-Principles Study on Hydrogen Annealing Effect in Si/SiO2 Interface by Thermal Oxidation Shingo Kawachi, Hiroki Shirakawa, Masaaki Araidai (Nagoya Univ.), Hiroyuki Kageshima (Shimane Univ.), Tetsuo Endoh (Tohoku Univ.), Kenji Shiraishi (Nagoya Univ.)  SDM2015-45 |
Why is high-quality Si/SiO2 interface readily fabricated by simple thermal oxidation? Even though the question is closel... [more] | SDM2015-45 pp.37-40 |
| R | 2013-11-14 15:15 |
Osaka | A Study on Sn-whisker growth by thermal cycle Sadanori Itou (Itoken office) R2013-77 |
Sn whisker grow up like curl shape under the thermal cycle test. However in some conditions, it grow up straight shape. ... [more] | R2013-77 pp.17-20 |
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| SDM | 2013-06-18 09:40 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Clarification of oxidation mechanisms in Al2O3/Ge structure and impact of interface reactions on interface properties Shigehisa Shibayama, Kimihiko Kato, Mitsuo Sakashita, Wakana Takeuchi, Noriyuki Taoka, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2013-46 |
Currently, it is reported that the Ge surface oxidation through the thin Al2O3 layer using oxygen plasma (post plasma ox... [more] | SDM2013-46 pp.13-18 |
| SDM | 2013-06-18 15:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Lecture]
Challenges of high-reliability in SiC-MOS gate structures Junji Senzaki, Atsushi Shimozato, Yasunori Tanaka, Hajime Okumura (AIST) SDM2013-60 |
Influences of wafer-related defect and gate oxide fabrication process on MOS characteristics with gate oxides thermally ... [more] | SDM2013-60 pp.81-86 |
| SDM | 2013-06-18 16:45 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Lecture]
An attempt for clarification of SiC oxidation mechanism
-- Common/different point to Si oxidation -- Yasuto Hijikata, Shuhei Yagi, Hiroyuki Yaguchi (Saitama Univ.) SDM2013-62 |
Further understanding of the SiC oxidization mechanism is indispensable for MOSFET using a SiC semiconductor to exceed t... [more] | SDM2013-62 pp.91-96 |
| SDM, ED (Workshop) |
2012-06-27 11:30 |
Okinawa | Okinawa Seinen-kaikan | [Invited Talk]
Gate Stack Technologies for Silicon Carbide Power MOS Devices Takuji Hosoi, Takashi Kirino, Yusuke Uenishi, Daisuke Ikeguchi, Atthawut Chanthaphan (Osaka Univ.), Akitaka Yoshigoe, Yuden Teraoka (JAEA), Shuhei Mitani, Yuki Nakano, Takashi Nakamura (ROHM), Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) |
Silicon carbide (SiC) is a promising material for high-power electronic devices. Although SiO$_2$ dielectric film can be... [more] | |
| SDM | 2012-06-21 10:55 |
Aichi | VBL, Nagoya Univ. | Clarification of Interfacial Reaction Mechanism in O2 Annealing or O radical Process for Al2O3/Ge Structure Shigehisa Shibayama, Kimihiko Kato, Mitsuo Sakashita, Wakana Takeuchi, Noriyuki Taoka, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2012-48 |
To realize a high performance Ge MOSFET, it is quite important to achieve simultaneously the low interface state density... [more] | SDM2012-48 pp.27-32 |
| SDM | 2009-06-19 10:00 |
Tokyo | An401・402 Inst. Indus. Sci., The Univ. of Tokyo | Atomistic Modeling of GeO2/Ge Interface Structure by Molecular Dynamics
-- Comparison with SiO2/Si Interface -- Takanobu Watanabe, Tomoya Onda, Ryo Tosaka, Hideaki Yamamoto (Waseda Univ.) SDM2009-27 |
We have performed atomistic modeling of GeO2/Ge interface structure by using newly developed interatomic force-field for... [more] | SDM2009-27 pp.3-8 |
| OPE | 2008-12-19 13:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Si quantum wells by thermal oxidation and Er-doped structures Ryusuke Osaki, Yasuhiko Ishikawa (Univ. of Tokyo), Yoshifumi Yamashita, Yoichi Kamiura (Okayama Univ.), Kazumi Wada (Univ. of Tokyo) OPE2008-138 |
Er-doped Si has attracted much attention as a possible candidate for 1.5 μm light-emitting material in Silicon photonics... [more] | OPE2008-138 pp.11-16 |
| SDM | 2007-10-05 14:00 |
Miyagi | Tohoku Univ. | A Study on Improvement of Uniformity for SOI/BOX Layer Formation by SBSI Process Kouki Notake, Yuichiro Suda, Shun-ichiro Ohmi (Tokyo Tech) SDM2007-188 |
A selective etching of SiGe layers for Si/SiGe/Si(100) layers has been investigated to reduce damage of Si surfaces. It ... [more] | SDM2007-188 pp.49-52 |
| ED | 2006-08-04 10:15 |
Osaka | Osaka Univ. Convention Center | Growth and emission characteristics of iron-oxide whiskers. Morihiro Okada (Shizuoka Univ./Nippon Steel Co.), Yoichiro Neo (Shizuoka Univ.), Takahiro Matsumoto (Stanley), Kenji Kubomura (KIT), Hidenori Mimura (Shizuoka Univ.) |
Iron-oxide whiskers with diameters between 30 and 100 nm and aspect ratios of up to 1000 were obtained by the thermal ox... [more] | ED2006-130 pp.63-65 |
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