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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 6 of 6  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
LQE, OPE, CPM, EMD, R 2019-08-22
16:00		 Miyagi   [Invited Talk] Reconsideration of TDDB Statistics of Thick Dielectric Films Used in SiC/GaN Power/RF Devices and Image Sensors
Kenji Okada (TowerJazz Panasonic Semiconductor) R2019-25 EMD2019-23 CPM2019-24 OPE2019-52 LQE2019-30		 Recent advances of GaN/SiC power devices, RF/MMIC (monolithic microwave integrated circuit) devices, and also Image Sens... [more] R2019-25 EMD2019-23 CPM2019-24 OPE2019-52 LQE2019-30
pp.29-34
SDM 2011-02-07
16:25		 Tokyo Kikai-Shinko-Kaikan Bldg. Highly Manufacturable ELK Integration Technology with Metal Hard Mask Process for High Performance 32nm-node Interconnect and Beyond
S. Matsumoto, T. Harada, Y. Morinaga, D. Inagaki, J. Shibata, K. Tashiro, T. Kabe, Akihisa Iwasaki, S. Hirao, M. Tsutsue, K. Nomura, K. Seo, T. Hinomura, Naoki Torazawa, S. Suzuki (Panasonic) SDM2010-226		 High performance 32nm-node interconnect with ELK (Extremely Low-k, k=2.4) has been demonstrated. The two main key techno... [more] SDM2010-226
pp.59-63
SDM 2010-02-05
16:45		 Tokyo Kikai-Shinko-Kaikan Bldg. Evaluation of Line-Edge Roughness in Cu/Low-k Interconnect Patterns
Atsuko Yamaguchi, D. Ryuzaki, Kenichi Takeda (Hitachi), Hiroki Kawada (Hitachi High-Tech.) SDM2009-192		 To establish the method for evaluating Cu/low-k interconnect line-edge roughness (LER), resist, low-k, and Cu/low-k samp... [more] SDM2009-192
pp.59-63
SDM 2009-10-30
13:00		 Miyagi Tohoku University Recovery from Reactive Ion Etching Damage in SiO2 Films
Nobuhito Kawada, Satoshi Nagashima, Toru Ichikawa, Hiroshi Akahori (Toshiba Corp.) SDM2009-129		 As the MOS device shrinkage progress, the influence of RIE(Reactive Ion Etching) damage becomes remarkable. Especially, ... [more] SDM2009-129
pp.51-56
SDM 2009-10-30
14:00		 Miyagi Tohoku University A study on improvement of electrical characteristics for low temperature SiO2 film
Hidenobu Nagashima, Hiroshi Akahori (TOSHIBA) SDM2009-131		 The metal gate electrode is paid to attention as a low resistivity material in the MOS transistor as scaling progresses.... [more] SDM2009-131
pp.63-67
SDM, R, ED 2007-11-16
16:10		 Osaka   A New TDDB Degradation Model Based on Cu Ion Drift in Cu Interconnect Dielectrics
Naohito Suzumura, Shigehisa Yamamoto, , , Junko Komori, (Renesas Technology Corp.) R2007-53 ED2007-186 SDM2007-221		 A new physical model of Time-Dependent Dielectric Breakdown (TDDB) in Cu interconnect dielectrics is proposed. TDDB occu... [more] R2007-53 ED2007-186 SDM2007-221
pp.39-44
 Results 1 - 6 of 6  /   
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