Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
MRIS, ITE-MMS |
2013-03-08 15:50 |
Aichi |
Nagoya Univ. |
Thermally assisted switching on magnetic tunnel junctions with perpendicular magnetized TbFe memory layer Yuki Fujisawa, Daiki Yoshikawa, Takeshi Kato, Satoshi Iwata (Nagoya Univ.), Shigeru Tsunashima (NISRI) MR2012-50 |
Perpendicular magnetized [Co/Pd] / MgO / TbFe tunnel junctions whose memory layer, TbFe, exhibits large perpendicular an... [more] |
MR2012-50 pp.33-37 |
SDM |
2012-12-07 16:15 |
Kyoto |
Kyoto Univ. (Katsura) |
Correlation between parameters related to reset speed in HfO2 Conducting-Bridge memory Shigeyuki Tsuruta, Kentaro Kinoshita, Sho Hasegawa, Yutaro Enomoto, Satoru Kishida (Tottori Univ.) SDM2012-135 |
Improvement of memory performance of conducting-bridge random access memory (CB-RAM) is possible simply by replacing con... [more] |
SDM2012-135 pp.119-122 |
EMD |
2012-12-01 13:00 |
Chiba |
Chiba Institute of Technology |
[Invited Talk]
The Contact Resistance Performance of Gold Coated Carbon-Nanotube Surfaces under Low Current Switching. John W.McBride, Chamaporn Chianrabutra, Liudi Jiang, Suan Hui Pu (Univ. of Southampton) EMD2012-83 |
Multi-Walled CNT (MWCNT) are synthesized on a silicon wafer and sputter coated with a gold film. The planar surfaces are... [more] |
EMD2012-83 pp.105-112 |
OME |
2012-11-19 13:00 |
Osaka |
Room 302, Nakanoshima Ctr., Osaka Univ. |
Ferroelectric properties by in-plane polarization switching of perpendicularly oriented vinylidene fluoride thin films Takaaki Inoue, Yasuko Koshiba, Masahiro Misaki, Kenji Ishida, Yasukiyo Ueda (Kobe Univ.) OME2012-66 |
In-plane polarization switching of vinylidene fluoride (VDF) oligomer [CF3(CH2CF2)nI](n=12) were observed for the first ... [more] |
OME2012-66 pp.21-25 |
NLP, CAS |
2012-09-20 12:40 |
Kochi |
Eikokuji Campus, University of Kochi |
Desgin of a boot-strapped switch circuit to achieve continuous ON-state Naoaki Saimen, Masayoshi Tachibana (Kochi Univ of Tech) CAS2012-30 NLP2012-56 |
This paper present that the desgin of a boot-strapped switch circuit to achieve continuous ON-state,
the simulated of ... [more] |
CAS2012-30 NLP2012-56 pp.1-5 |
EE |
2012-01-25 15:40 |
Nagasaki |
|
Switching trajectory and switching loss for switched capacitor Shinya Hirakawa, Masahito Shoyama (Kyushu Univ.) EE2011-42 |
In the switched capacitor converter, the charges of capacitors are moved by the switching of switches between the capaci... [more] |
EE2011-42 pp.65-68 |
LQE, ED, CPM |
2011-11-17 16:05 |
Kyoto |
Katsura Hall,Kyoto Univ. |
High-accuracy equivalent-circuit-model for GaN-GIT bi-directional switch Toshihide Ide, Mitsuaki Shimizu, Xu-Qiang Shen (AIST), Tatsuo Morita, Tetsuzo Ueda, Tsuyoshi Tanaka (Panasonic) ED2011-84 CPM2011-133 LQE2011-107 |
GaN-Gate Injection Transistor(GIT) Bi-directional Switches (BDSWs) is capable of the low on-resistance operation as comp... [more] |
ED2011-84 CPM2011-133 LQE2011-107 pp.55-60 |
ICD |
2011-04-19 15:50 |
Hyogo |
Kobe University Takigawa Memorial Hall |
Switching Mechanism of Perovskite-Oxide-Based Resistive Random Access Memory (ReRAM) Akihiro Hanada (Tottori Univ.), Kentaro Kinoshita (Tottori Univ./TEDREC), Katsuhiko Matsubara, Takahiro Fukuhara (Tottori Univ.), Satoru Kishida (Tottori Univ./TEDREC) ICD2011-19 |
We prepared resistive random access memory (ReRAM) structures of Al / Bi2Sr2CaCu2O8+δ (Bi-2212) bulk single crystal / Pt... [more] |
ICD2011-19 pp.105-109 |
MRIS, ITE-MMS |
2011-03-11 16:45 |
Aichi |
Nagoya Univ. |
Thermally Assisted Switching on Magnetic Tunnel Junctions with TbFe Layer Koji Noda, Yuki Fujisawa, Takeshi Kato, Satoshi Iwata (Nagoya Univ.), Shigeru Tsunashima (NISRI) MR2010-63 |
We fabricated perpendicular magnetized magnetic tunnel junctions (MTJs) with a rare earth - transition metal (RE-TM) all... [more] |
MR2010-63 pp.47-51 |
EMD |
2010-11-11 10:45 |
Overseas |
Xi'an Jiaotong University |
The effect of mechanical parameters of switch-type contact on relay life Wanbin Ren, Yubin Jiao, Xiaochen Li, Qiong Yu (Harbin Inst. of Tech.) EMD2010-75 |
The mechanical parameters of relay mainly include over-travel of N.O. contacts and N.C. contacts, contact gap, and magne... [more] |
EMD2010-75 pp.37-40 |
EMD |
2010-11-11 13:00 |
Overseas |
Xi'an Jiaotong University |
Carbon-nano tube surfaces for low current electrical contact applications John W. McBride, Mark Spearing (Univ. of Southampton), Esa Yunus (Institut Teknologi Brunei) EMD2010-79 |
An experimental investigation of gold coated, multi-walled carbon nanotube (CNT) surfaces has been conducted, to determi... [more] |
EMD2010-79 pp.53-56 |
ICD, ITE-IST |
2009-10-02 10:00 |
Tokyo |
CIC Tokyo (Tamachi) |
Thermal Noise Effects Caused by Settling Time Optimization in Switched-Capacitor Circuits Dong Ta Ngoc Huy, Masaya Miyahara, Akira Matsuzawa (Tokyo Inst. of Tech.) ICD2009-48 |
Switch thermal noise represents a major limitation on the performance of switched-capacitor circuits. In these circuits,... [more] |
ICD2009-48 pp.81-86 |
SDM, ED |
2009-06-24 14:30 |
Overseas |
Haeundae Grand Hotel, Busan, Korea |
[Invited Talk]
Advanced magnetic tunnel junctions for hybrid spintronics/CMOS circuits Shoji Ikeda (Tohoku Univ.), Jun Hayakawa (Hitachi, Ltd.), Huadong Gan, Kotaro Mizumuma, Ji Ho Park (Tohoku Univ.), Hiroyuki Yamamoto, Katsuya Miura (Hitachi, Ltd./Tohoku Univ.), Haruhiro Hasegawa, Ryutaro Sasaki, Toshiyasu Meguro (Tohoku Univ.), Kenchi Ito (Hitachi, Ltd.), Fumihiro Matsukura, Hideo Ohno (Tohoku Univ.) ED2009-51 SDM2009-46 |
Magnetoresistive random access memory (MRAM) using magnetic tunnel junctions (MTJs) is one of the candidates of universa... [more] |
ED2009-51 SDM2009-46 pp.5-8 |
SDM, ED |
2009-06-24 15:15 |
Overseas |
Haeundae Grand Hotel, Busan, Korea |
Study of the DC Performance of Fabricated Magnetic Tunnel Junction Integrated on Back-end Metal Line of CMOS Circuits Fumitaka Iga, Masashi Kamiyanagi, Shoji Ikeda (Tohoku Univ.), Katsuya Miura (Tohoku Univ./Hitachi), Jun Hayakawa (Hitachi), Haruhiro Hasegawa, Takahiro Hanyu, Hideo Ohno, Tetsuo Endoh (Tohoku Univ.) ED2009-53 SDM2009-48 |
In this paper, we have succeeded in the fabrication of high performance Magnetic Tunnel Junction (MTJ) which is integrat... [more] |
ED2009-53 SDM2009-48 pp.13-16 |
ED |
2008-12-19 15:30 |
Miyagi |
Tohoku Univ. |
60GHz High Isolation SPDT MMIC Switches. Yoshihiro Tsukahara, Hirotaka Amasuga, Seiki Goto, Tomoki Oku, Takahide Ishikawa (Mitsubishi Electric Corp.) ED2008-188 |
This paper describes the successful development of a 60GHz high isolation SPDT MMIC switch for wireless applications. In... [more] |
ED2008-188 pp.21-25 |
EMD |
2008-11-16 13:40 |
Miyagi |
Tohoku Bunka Gakuin University (Sendai) |
Analytical Model of Melting Phenomena for Breaking Relay Contacts Noboru Wakatsuki, Nobuo Takatsu, Toshiteru Maeda, Takayuki Kudo (Ishinomaki Senshu Univ.) EMD2008-97 |
Using the transient current switch circuit in parallel with the energizing contacts, the slow decay of the contact curre... [more] |
EMD2008-97 pp.129-132 |
EE |
2008-07-25 10:25 |
Hokkaido |
|
* Toru Tanaka, Toshimitsu Tanaka, Tadatoshi Babasaki, Masato Mino (NTT) EE2008-24 |
This paper describes a fuse model that can calculate the fuse current and voltage fluctuations from the start of a short... [more] |
EE2008-24 pp.71-76 |
SDM, ED |
2008-07-11 10:50 |
Hokkaido |
Kaderu2・7 |
High Breakdown Voltage of 10400V in AlGaN/GaN HFET with AlN Passivation Daisuke Shibata, Hisayoshi Matsuo (Matsushita Electric Industrial), Shuichi Nagai, Ming Li (Panasonic Boston Lab), Naohiro Tsurumi, Hidetoshi Ishida, Manabu Yanagihara, Yasuhiro Uemoto, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda (Matsushita Electric Industrial) ED2008-73 SDM2008-92 |
We report ultra high blocking voltage AlGaN/GaN heterojunction transistors (HFETs) using thick poly-crystalline AlN (pol... [more] |
ED2008-73 SDM2008-92 pp.177-181 |
OME |
2008-05-29 13:00 |
Tokyo |
Denki-Club, Meeting room 3 |
Printed plastic micromechanical switches for the application to large-area electronics Tomoyuki Yokota, Shintaro Nakano, Tsuyoshi Sekitani, Takao Someya (Tokyo Univ.) OME2008-21 |
We fabricated plastic micromechanical system switches by inkjet printing. In these switches, metal electrodes prepared o... [more] |
OME2008-21 pp.1-6 |
MW |
2008-02-29 14:50 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
A Study on Design of Low Noise Direct Sampling Mixer Takafumi Nasu, Kiyomichi Araki (Tokyo Institure of Technology) MW2007-181 |
In this report, additive noise from Switched Capacitor Filter (SCF) section in Direct Sampling Mixer (DSM) was analyzed.... [more] |
MW2007-181 pp.67-72 |