Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
HWS, VLD |
2019-02-28 10:50 |
Okinawa |
Okinawa Ken Seinen Kaikan |
Single Supply Level Shifter Circuit using body-bias Yuki Takeyoshi, Kimiyoshi Usame (SIT) VLD2018-109 HWS2018-72 |
A multi-VDD scheme exists as a technique to realize low power consumption by using different power supply voltages. A ci... [more] |
VLD2018-109 HWS2018-72 pp.97-102 |
VLD, DC, CPSY, RECONF, CPM, ICD, IE (Joint) [detail] |
2016-11-28 13:10 |
Osaka |
Ritsumeikan University, Osaka Ibaraki Campus |
Feasibility studies and evaluation for Level-Shifter less design in Silicon-on-Thin-BOX (SOTB) Shunsuke Kogure, Kimiyoshi Usami (Shibaura Institute of Tech) VLD2016-47 DC2016-41 |
Level shifter is a circuit that changes the voltage amplitude of the signal. It is essential to exchange signals with di... [more] |
VLD2016-47 DC2016-41 pp.19-24 |
VLD, DC, CPSY, RECONF, CPM, ICD, IE (Joint) [detail] |
2016-11-29 09:00 |
Osaka |
Ritsumeikan University, Osaka Ibaraki Campus |
Design and Implementation Methodology of Low-power Standard cell memory with optimized body-bias separation in Silicon-on-Thin-BOX (SOTB) Yusuke Yoshida, Kimiyoshi Usami (Shibaura Institute of Tech.) VLD2016-53 DC2016-47 |
We focus on the Standard Cell Memory (SCM) as another option to supersede SRAM for low-voltage operation. This paper des... [more] |
VLD2016-53 DC2016-47 pp.55-60 |
VLD |
2016-03-01 16:40 |
Okinawa |
Okinawa Seinen Kaikan |
Optimization technique of substrate voltage for Dynamic Multi-Vth methodology in Silicon-on-thin BOX. Hanano Suzuki, Kimiyoshi Usami (Shibaura IT) VLD2015-129 |
Silicon-on-Thin-BOX is one of the FD-SOI devices. It operates at ultra-low voltage and it is possible to effectively cha... [more] |
VLD2015-129 pp.105-110 |
VLD |
2016-03-01 17:05 |
Okinawa |
Okinawa Seinen Kaikan |
Low-power Standard Cell Memory using Silicon-on-Thin-BOX (SOTB) and Body-bias Control Yusuke Yoshida, Masaru Kudo, Kimiyoshi Usami (SIT) VLD2015-130 |
In recent years, energy harvesting and sensor node have attracted a lot of attention. Therefore, a memory which can redu... [more] |
VLD2015-130 pp.111-116 |
VLD, CPSY, RECONF, IPSJ-SLDM, IPSJ-ARC [detail] |
2016-01-20 09:25 |
Kanagawa |
Hiyoshi Campus, Keio University |
Implementation and evaluation of Dynamic Multi-Vth methodology in Silicon-on-Thin-BOX Shohei Io, Hanano Suzuki, Shohei Nakamura, Kimiyoshi Usami (Shibaura IT) VLD2015-88 CPSY2015-120 RECONF2015-70 |
Silicon-on-Thin-BOX is one of the FD-SOI devices. It operates at ultra-low voltage and it is possible to effectively cha... [more] |
VLD2015-88 CPSY2015-120 RECONF2015-70 pp.91-96 |
VLD |
2014-03-05 13:50 |
Okinawa |
Okinawa Seinen Kaikan |
Design methodology on Dynamic Multi-Vth control technique for Silicon on Thin Buried Oxide(SOTB) Tatsuki Saigusa, Kimiyoshi Usami (Shibaura Inst. of Tech) VLD2013-162 |
Silicon on thin BOX(SOTB) is one of FD-SOI device.It is possible to operate with ultra-low voltage of 0.4V and greatly c... [more] |
VLD2013-162 pp.153-158 |
VLD, IPSJ-SLDM |
2013-05-16 14:10 |
Fukuoka |
Kitakyushu International Conference Center |
Level Converter Design for Ultra Low Voltage Operation in Silicon-on-Thin-BOX MOSFET Shohei Nakamura, Kimiyoshi Usami (Shibaura Inst. of Tech.) VLD2013-5 |
Silicon on Thin Buried Oxide (SOTB) technology has an advantage that variation in threshold voltage can be more suppress... [more] |
VLD2013-5 pp.43-48 |