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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| CPM | 2023-08-01 09:45 |
Hokkaido | (Primary: On-site, Secondary: Online) |
Fabrication of SiC/AlN multilayer structure on 3°off-axis Si(110) substrate and graphene formation thereon Ryosuke Saito, Yuki Nara, Daiki Kasai, Haruto Koriyama, Yoshiharu Enta, Hideki Nakazawa (Hirosaki Univ.)  CPM2023-19 |
We have grown aluminum nitride (AlN) films on 3 ̊off-axis Si(110) substrates by pulsed laser deposition (PLD) and formed... [more] | CPM2023-19 pp.29-32 |
| CPM | 2019-08-26 15:50 |
Hokkaido | Kitami Institute of Technology | Formation of an AlN intermediate layer on an off-axis Si(110) substrate and SiC heteroepitaxial growth thereon Hideki Nakazawa, Yuki Nara, Hiroki Kasai (Hirosaki Univ.) CPM2019-42 |
We have grown AlN films on off-axis Si(110) substrates by pulsed laser deposition (PLD) and then formed SiC buffer layer... [more] | CPM2019-42 pp.23-28 |
| CPM | 2018-08-09 14:50 |
Aomori | Hirosaki Univ. | Growth of graphene on SiC/AlN/Si(110) substrates Hideki Nakazawa, Syunki Narita, Yuki Nara, Yoshiharu Enta (Hirosaki Univ.) CPM2018-9 |
We have grown aluminum nitride (AlN) films on 3º off-axis Si(110) substrates by pulsed laser deposition (PLD), and inves... [more] | CPM2018-9 pp.7-12 |
| CPM | 2018-08-09 15:10 |
Aomori | Hirosaki Univ. | Investigation of formation conditions of SiC buffer layers for SiC/SiC buffer layer/AlN/Si(110) multilayer structures Yuki Nara, Asahi Kudo, Hideki Nakazawa (Hirosaki Univ.) CPM2018-10 |
We have grown aluminum nitride (AlN) films on 3° off-axis Si(110) substrates by pulsed laser deposition using an AlN tar... [more] | CPM2018-10 pp.13-16 |
| R, EMD, CPM, LQE, OPE | 2017-08-31 13:55 |
Aomori | Epitaxial growth of SiC on AlN/Si(110) substrates using SiC buffer layer by pulsed laser deposition Yuki Nara, Syunki Narita, Hideki Nakazawa (Hirosaki Univ.) R2017-25 EMD2017-19 CPM2017-40 OPE2017-49 LQE2017-22 |
We have grown aluminum nitride (AlN) films on 3° off-axis Si(110) substrates by pulsed laser deposition using an AlN tar... [more] | R2017-25 EMD2017-19 CPM2017-40 OPE2017-49 LQE2017-22 pp.7-10 |
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| SDM | 2016-11-10 11:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Channel Properties of SiC Trench-Etched Double-Implanted MOS (TED MOS) Naoki Tega, Digh Hisamoto, Akio Shima, Yasuhiro Shimamoto (Hitachi) SDM2016-80 |
We comprehensively studied the channel properties of a silicon carbide trench-etched double-implanted MOS (SiC TED MOS).... [more] | SDM2016-80 pp.9-14 |
| CPM | 2015-08-10 13:20 |
Aomori | Preparation and characterization of SiC thin films on AlN/Si(110) substrates by pulsed laser deposition Kazuki Meguro, Shunki Narita, Hideki Nakazawa (Hirosaki Univ.) CPM2015-31 |
We have formed a SiC interfacial buffer layer on AlN/Si(110) substrates at a low temperature, and grew SiC films on the ... [more] | CPM2015-31 pp.1-5 |
|
| CPM | 2015-08-10 14:00 |
Aomori | Growth of epitaxial SiC thin films on AlN/Si(110) substrates by pulsed laser deposition Shunki Narita, Kazuki Meguro, Hideki Nakazawa (Hirosaki Univ.) CPM2015-33 |
We have grown aluminum nitride (AlN) films on Si(110) substrate by pulsed laser deposition using an AlN target, and inve... [more] | CPM2015-33 pp.11-14 |
|
| US | 2014-12-15 13:30 |
Tokyo | Tokyo Institute of Technology, Suzukakedai Campus | Fundamental Study on Ultrasonic-Vibration Abrasive Process of Polycrystalline Diamond-End Mill Takeshi Watanabe, Takashi Goto (NS Tool), Masahiko Jin (Nippon Inst. of Tech.) US2014-65 |
Polycrystalline diamond (PCD) end mills are expected as a novel cutting tool that can finish the molds and machine parts... [more] | US2014-65 pp.1-4 |
| CPM | 2014-09-04 13:55 |
Yamagata | The 100th Anniversary Hall, Yamagata University | SiC heteroepitaxial growth on an AlN layer formed on off-axis Si(001) substrates Kazuki Meguro, Tsugutada Narita, Toshihiro Uemura, Hideki Nakazawa (Hirosaki Univ.) CPM2014-76 |
We have grown aluminum nitride (AlN) films on 4º off-axis Si(100) and Si(110) substrates by pulsed laser deposition usin... [more] | CPM2014-76 pp.7-12 |
| SDM | 2013-12-13 17:40 |
Nara | NAIST | Structural Change of Silicon Carbide Surface Etched by Chlorine-Trifluoride Ryota Hori, Tomoaki Hatayama, Hiroshi Yano, Takashi Fuyuki (NAIST) SDM2013-134 |
Silicon carbide surface with 4°-off toward <11-20> was chemically etched by chlorine-trifluoride gas without plasma. The... [more] | SDM2013-134 pp.107-112 |
| SDM | 2013-06-18 15:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Lecture]
Challenges of high-reliability in SiC-MOS gate structures Junji Senzaki, Atsushi Shimozato, Yasunori Tanaka, Hajime Okumura (AIST) SDM2013-60 |
Influences of wafer-related defect and gate oxide fabrication process on MOS characteristics with gate oxides thermally ... [more] | SDM2013-60 pp.81-86 |
| SDM | 2013-06-18 16:10 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Lecture]
Unusual Generation and Elimination of Mobile Ions in Thermally Grown Oxides in SiC-MOS Devices Heiji Watanabe, Atthawut Chanthaphan (Osaka Univ), Yuki Nakano, Takashi Nakamura (ROHM), Takuji Hosoi, Takayoshi Shimura (Osaka Univ) SDM2013-61 |
Unusual generation and elimination of mobile ions in thermally grown SiO2 on 4H-SiC(0001) were systematically investigat... [more] | SDM2013-61 pp.87-90 |
| EMCJ | 2009-04-24 13:55 |
Okayama | Characteristic Analysis of the Microstrip Antenna Attached with Electromagnetic Wave Absorber as a Noise Reduction Model Kaname Ishigaki, Hiroki Anzai (Tsuruoka National Cll of Tech.) EMCJ2009-3 |
Electromagnetic wave noises which are radiated from around electronic devices like video tips or circuits on Digital Hig... [more] | EMCJ2009-3 pp.13-18 |
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| SDM | 2008-12-05 14:30 |
Kyoto | Kyoto University, Katsura Campus, A1-001 | Improved Performance of an SiC MOSFET by a Three-Dimensional Gate Structure Yuichiro Nanen, Hironori Yoshioka, Masato Noborio, Jun Suda, Tsunenobu Kimoto (Kyoto Univ) SDM2008-191 |
4H-SiC (0001) MOSFETs with a three-dimensional gate structure, which has side-wall channels on the {11-20} face have bee... [more] | SDM2008-191 pp.37-41 |
| SDM, ED | 2008-07-11 13:50 |
Hokkaido | Kaderu２・７ | SiC MESFET Power Amplifier for 3.6 GHz-3.8 GHz WiMAX Application Jae-Kwon Kim, Kyunghwan Kim, Jinwook Burn (Sogang Univ.) ED2008-99 SDM2008-118 |
Silicon-carbide (SiC) devices have received increased attention for high-power, high-speed, high temperature, and radiat... [more] | ED2008-99 SDM2008-118 pp.313-316 |
| SDM | 2007-12-14 16:20 |
Nara | Nara Institute Science and Technology | Bevel mesa combined with implanted junction termination structure for 10 kV SiC PiN diodes Toru Hiyoshi (Kyoto Univ.), Tsutomu Hori (Hitachi), Jun Suda, Tsunenobu Kimoto (Kyoto Univ.) SDM2007-233 |
A 10 kV 4H-SiC PiN diode with an improved junction termination structure has been fabricated. A mesa structure was forme... [more] | SDM2007-233 pp.47-50 |
| CPM | 2007-11-17 09:50 |
Niigata | Nagaoka University of Technology | Preparation SiC/SOI structure substrate using Hot-Mesh CVD technique，and dependence of top Si layer thickness Yuichiro Makino, Hitoshi Miura, Hiroshi Nishiyama, Kanji Yasui, Masasuke Takata, Yasunobu Inoue, Tadashi Akahane (Nagaoka Univ. of Tech.) CPM2007-117 |
Epitaxial growth of 3C-SiC films on SOI substrates was investigated by hot-mesh (HM-) CVD method using monomethylsilane ... [more] | CPM2007-117 pp.65-68 |
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