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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ED, SDM | 2010-06-30 12:00 |
Tokyo | Tokyo Inst. of Tech. Ookayama Campus | [Invited Talk]
Low-temperature Epitaxial Growth of Ferromagnetic Silicide for SiGe Based Spintransistors Masanobu Miyao (Kyushu Univ.), Kohei Hamaya (Kyushu Univ./JST)  ED2010-52 SDM2010-53 |
Recent our progress in low temperature molecular beam epitaxy of magnetic silicide (Fe3Si) on group-IV-semiconductor (Si... [more] | ED2010-52 SDM2010-53 pp.11-13 |
| SDM, OME | 2010-04-23 11:20 |
Okinawa | Okinawa-Ken-Seinen-Kaikan Bldg. | Al-Induced Crystallization of SiGe thin-films on glass and its growth mechanism Naoyuki Kawabata (Kyushu Univ.), Masashi Kurosawa (Kyushu Univ./JSPS Research Fellow), Taizoh Sadoh, Masanobu Miyao (Kyushu Univ.) SDM2010-4 OME2010-4 |
Large grain polycrystalline silicon-germanium (poly-SiGe) with controlled crystal orientation on glass substrates is req... [more] | SDM2010-4 OME2010-4 pp.13-17 |
| SDM, OME | 2010-04-23 15:00 |
Okinawa | Okinawa-Ken-Seinen-Kaikan Bldg. | Crystal Orientation Dependent Growth Features of Ge-on-Insulator by SiGe Mixing Triggered Melting Process Yasuharu Ohta, Takanori Tanaka, Taizoh Sadoh, Masanobu Miyao (Kyushu Univ.) SDM2010-11 OME2010-11 |
We proposed SiGe mixing triggered melting growth, and realized (100)-oriented Ge on insulator (GOI) stripes (～400 μm) by... [more] | SDM2010-11 OME2010-11 pp.49-52 |
| SDM, OME | 2010-04-23 15:20 |
Okinawa | Okinawa-Ken-Seinen-Kaikan Bldg. | Formation of Defect-Free Ge Island on Insulator by Ni-Imprint Induced Si Micro-Seeding Rapid Melting Takashi Sakane, Kaoru Toko, Takanori Tanaka, Taizoh Sadoh, Masanobu Miyao (Kyushu Univ.) SDM2010-12 OME2010-12 |
Liquid-phase epitaxial growth of Ge islands on insulator (GOI) using Ni-imprint-induced Si (111) micro-crystal seeds (~1... [more] | SDM2010-12 OME2010-12 pp.53-57 |
| SDM | 2009-11-13 10:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Carrier Transport Analysis of Strained SiGe/Si-pMOSFETs using Full-band Device Simulation Hiroshi Takeda (NEC Electronics Corp.), Michihito Kawada (NEC Informatec Systems), Kiyoshi Takeuchi, Masami Hane (NEC Electronics Corp.) SDM2009-144 |
Transport characteristics of strained-SiGe on Si channel pMOSFETs is analyzed in detail by full-band device simulation. ... [more] | SDM2009-144 pp.49-53 |
| ICD, ITE-IST | 2009-10-02 15:10 |
Tokyo | CIC Tokyo (Tamachi) | A High Image-Rejection 24-GHzBand Low Noise Amplifier Toru Masuda, Nobuhiro Shiramizu, Takahiro Nakamura, Katsuyoshi Washio (Hitachi) ICD2009-56 |
An image-rejection low-noise amplifier (LNA) based on 0.18-um SiGe BiCMOS technology was developed in order to create a ... [more] | ICD2009-56 pp.129-134 |
| ED, CPM, SDM | 2009-05-14 16:40 |
Aichi | Satellite Office, Toyohashi Univ. of Technology | Deposition of Microcrystalline SiGe by Magnetron Sputtering on SiO2 Substrates Akihiko Hiroe, Tetsuya Goto, Akinobu Teramoto, Tadahiro Ohmi (Tohoku Univ.) ED2009-25 CPM2009-15 SDM2009-15 |
Microcrystalline Si1-xGex (x~0.8) has been successfully deposited over SiO2 substrates by magnetron sputtering. Detailed... [more] | ED2009-25 CPM2009-15 SDM2009-15 pp.37-42 |
| OME, SDM | 2009-04-24 16:15 |
Saga | AIST Kyushu-center | Low-Temperature Growth of Silicon-germanium on Glass by Aluminum Induced Layer Exchange Masashi Kurosawa, Naoyuki Kawabata, Taizoh Sadoh, Masanobu Miyao (Kyushu Univ.) SDM2009-5 OME2009-5 |
Low-temperature (<550$^o$C) Al-induced crystallization (AIC) of amorphous Si$_{1-x}$Ge$_x$ ($x$=0-1) on glass substrate ... [more] | SDM2009-5 OME2009-5 pp.19-23 |
| MW | 2009-03-06 16:00 |
Tokyo | NHK Science & Technical Research Lab. | A 2 GHz-Band Self Frequency Dividing Quadrature Mixer Using Current Re-use Configuration Eiji Taniguchi, Hiroomi Ueda, Mitsuhiro Shimozawa, Noriharu Suematsu (Mitsubishi Electric Corp.) MW2008-205 |
For recent wireless and mobile applications, a direct conversion and a low IF architectures are widely used in a RF-IC r... [more] | MW2008-205 pp.87-91 |
| MW | 2008-11-21 09:30 |
Nagasaki | Nagasaki-Univ. | Supply-Voltage Switching Dual-Band Differential VCOs Using Single Dual-Band Resonant Hiroyuki Hasegawa, Masaki Shirata, Kazuyoshi Sakamoto, Yasushi Itoh (Shonan IT) MW2008-133 |
Design, fabrication and performance of the dual-band differential VCOs using a single dual-band resonator are presented.... [more] | MW2008-133 pp.85-90 |
| MW | 2008-11-21 09:55 |
Nagasaki | Nagasaki-Univ. | Frequency and Gain Tunable, Multiple Bandpass or Bandstop Differential Amplifiers Toshio Shinohara, Masaki Shirata, Kazuyoshi Sakamoto, Yasushi Itoh (SHonan IT) MW2008-134 |
Design, fabrication and performance of the frequency and gain tunable, multiple bandpass or bandstop differential amplif... [more] | MW2008-134 pp.91-96 |
| SAT | 2008-11-06 16:40 |
Overseas | Riviera Hotel Pusan | A Prototype Modem for Hyper-Multipoint Data Gathering SATCOM Systems
-- A Group Modem Applicable to Arbitrarily and Dynamically Assigned FDMA Signals -- Kiyoshi Kobayashi, Fumihiro Yamashita, Jun-ichi Abe (NTT) SAT2008-30 |
This paper presents a prototype group modem for a hyper-multipoint data gathering satellite communication system. It can... [more] | SAT2008-30 pp.81-86 |
| LQE, CPM, EMD, OPE | 2008-08-28 16:25 |
Miyagi | Touhoku Univ. | High-speed and low-resistance fast recovery diodes using SiGe anode layers Tatsuro Miyagi, Yusuke Ida, Takahiko Suzuki, Yuzuru Narita, Fumihiko Hirose (Yamagata Univ.) EMD2008-43 CPM2008-58 OPE2008-73 LQE2008-42 |
(To be available after the conference date) [more] | EMD2008-43 CPM2008-58 OPE2008-73 LQE2008-42 pp.61-64 |
| OPE, EMT, MW | 2008-07-25 09:25 |
Hokkaido | Frequency-Tunable, Multiple-Stopband Differential Amplifiers Masaki Shirata, Kazuyoshi Sakamoto, Toshio Shinohara, Yasushi Itoh (Shonan IT) MW2008-73 OPE2008-56 |
An L-band SiGe HBT differential amplifier with frequency-tunable and multiple stopbands is presented. To achieve frequen... [more] | MW2008-73 OPE2008-56 pp.147-150 |
|
| OPE, EMT, MW | 2008-07-25 09:50 |
Hokkaido | Differential Variable Gain Amplifiers Using Bridged-T Attenuator Circuits Kazuyoshi Sakamoto, Masaki Shirata, Kenji Nakamura, Yasushi Itoh (Shonan IT) MW2008-74 OPE2008-57 |
An L-band digitally-controlled, variable gain differential amplifier (VGA) is presented. It employs a bridged-T attenuat... [more] | MW2008-74 OPE2008-57 pp.151-156 |
|
| ICD, SDM | 2008-07-18 15:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | High Performance Sub-35 nm Bulk CMOS with Hybrid Gate Structures of NMOS; Dopant Confinement Layer (DCL) / PMOS; Ni-FUSI by Using Flash Lamp Anneal (FLA) in Ni-Silicidation
-- Hybrid Gate Structures -- Hiroyuki Ohta (Fujitsu Lab.), Kazuo Kawamura (FML), Hidenobu Fukutome (Fujitsu Lab.), Mitsugu Tajima, Ken-ichi Okabe (FML), Keiji Ikeda, Kimihiko Hosaka, Yoichi Momiyama, Shigeo Satoh, Toshihiro Sugii (Fujitsu Lab.) SDM2008-148 ICD2008-58 |
We applied Flash Lamp Annealing (FLA) in Ni-silicidation to our developed Dopant Confinement Layer (DCL) structure for t... [more] | SDM2008-148 ICD2008-58 pp.115-120 |
| SDM | 2008-06-09 13:30 |
Tokyo | An401・402, Inst. Indus. Sci., The Univ. of Tokyo | [Tutorial Lecture]
Current Status and Prospects of High Mobility Channel Technologies for High performance CMOS Shinichi Takagi (Univ. of Tokyo/MIRAI-AIST) SDM2008-42 |
Saturation of CMOS performance has been evident in the present 45 nm technology and beyond because of the a variety of l... [more] | SDM2008-42 pp.1-6 |
| RCS, AN, MoNA, SR, WBS (Joint) |
2008-03-06 10:40 |
Kanagawa | YRP | 0.4GHz-5.8GHz Multi-band Multi-Mode SiGe-MMIC Transceiver for Cognitive Radio Noriharu Suematsu, Koji Tsutsumi (Mitsubishi Electric), Hiroshi Harada (NICT) SR2007-85 |
A SiGe-MMIC transceiver has been developed for cognitive radio. This MMIC transceiver has multi-band characterictic whic... [more] | SR2007-85 pp.1-5 |
| SR | 2008-01-25 16:10 |
Nagano | Tateyama Prince hotel (Ohmachi city, Nagano prefecture) | A Low Spurious SiGe-MMIC Direct Conversion Transceiver for Cognitive Radio Using 2 fLO LO Switching Configuration Koji Tsutsumi, Fumiki Onoma, Jun Koide, Mikio Uesugi, Noriharu Suematsu (Mitsubishi Electric), Hiroshi Harada (NICT) SR2007-84 |
An RF-IC for multi-mode cognitive wireless system is required multi-band / multi-mode characteristics. One of the diffic... [more] | SR2007-84 pp.115-120 |
| ED, MW | 2008-01-18 10:20 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Multi-Band Differential Amplifiers with Stacked Resonators Toshio Shinohara, Masaki Shirata, Minoru Sato, Yasushi Itoh (Shonan Inst. of Tech.) ED2007-225 MW2007-156 |
A quad-band differential SiGe HBT amplifier with an equalized gain has been developed by using stacked LCR tank circuits... [more] | ED2007-225 MW2007-156 pp.115-118 |
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